公开(公告)号：US08031536B2

公开(公告)日：2011-10-04

申请号：US12748497

申请日：2010-03-29

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C7/10

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

摘要翻译： 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器， 存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控​​制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。

公开(公告)号：US07982537B2

公开(公告)日：2011-07-19

申请号：US12354309

申请日：2009-01-15

申请人： Yoshihiro Hayashi ,  Masaki Yoshinaga ,  Takashi Matsumoto

发明人： Yoshihiro Hayashi ,  Masaki Yoshinaga ,  Takashi Matsumoto

IPC分类号： H03F3/45

CPC分类号： H03F3/45179 ,  H03F3/3022 ,  H03F2203/45248 ,  H03F2203/45612

摘要： Disclosed herewith is a circuit system for improving a slew rate while reducing the power consumption in an operational amplifier that requires a comparatively high supply voltage (e.g., 5 V or upper) operation. The operational amplifier includes level shift circuits, differential pairs whose source connected serially, current voltage conversion circuit and output stage. The level shift circuits convert a differential input signal level and output to differential pairs. Combination of level shift circuit and differential pairs realize input signal difference detection and driving current control in the common circuit.

摘要翻译： 这里公开了一种用于在降低运算放大器中需要较高电源电压（例如5V或更高）操作的功率消耗的同时提高转换速率的电路系统。 运算放大器包括电平移位电路，源极串联连接的差分对，电流电压转换电路和输出级。 电平移位电路转换差分输入信号电平并输出到差分对。 电平移位电路和差分对的组合实现了公共电路中的输入信号差分检测和驱动电流控制。

公开(公告)号：USD627883S1

公开(公告)日：2010-11-23

申请号：US29354183

申请日：2010-01-20

申请人： Yoshihiro Hayashi

设计人： Yoshihiro Hayashi

公开(公告)号：US07836330B2

公开(公告)日：2010-11-16

申请号：US12140650

申请日：2008-06-17

申请人： Daisuke Yokota ,  Aritoki Takada ,  Tadashi Takeuchi ,  Yoshihiro Hayashi

发明人： Daisuke Yokota ,  Aritoki Takada ,  Tadashi Takeuchi ,  Yoshihiro Hayashi

IPC分类号： G06F11/00

CPC分类号： H04L41/0677 ,  H04L67/1095 ,  H04L69/40

摘要： Provided are a stream distribution system and a failure detection method capable of easily identifying the cause of quality loss in stream distribution. This stream distribution system includes a first server for communicating with a client terminal via a router and sending stream data, and a second server configured as a redundant server of the first server and connected to the first server. The first server has a communication status notification unit for sending a connection management table concerning the communication with the client terminal to the second server. The second server has a packet recording unit for acquiring a mirror packet, which is a copy of a packet sent to the first server, from the router, and a network failure monitoring unit for detecting a failure in a network between the first server and the client terminal based on the connection management table and a packet buffer.

摘要翻译： 提供了一种流分配系统和故障检测方法，其能够容易地识别流分发中质量损失的原因。 该流分配系统包括：第一服务器，用于经由路由器与客户终端进行通信，并发送流数据;以及第二服务器，被配置为第一服务器的冗余服务器并连接到第一服务器。 第一服务器具有通信状态通知单元，用于向第二服务器发送关于与客户终端的通信的连接管理表。 第二服务器具有分组记录单元，用于从路由器获取作为发送到第一服务器的分组的副本的镜像分组，以及网络故障监视单元，用于检测第一服务器与第一服务器之间的网络故障 客户端基于连接管理表和分组缓冲区。

公开(公告)号：US20100193953A1

公开(公告)日：2010-08-05

申请号：US11993285

申请日：2006-05-23

申请人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

发明人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L21/76877 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76835 ,  H01L21/76841 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/00

摘要： A trench is formed in an insulation film formed on top of a semiconductor substrate, and a barrier metal film is formed on the surface of the trench. After a copper or copper alloy film is formed on the barrier metal film, an oxygen absorption film in which a standard energy of formation of an oxidation reaction in a range from room temperature to 400° C. is negative, and in which an absolute value of the standard energy of formation is larger than that of the barrier metal film is formed, and the assembly is heated in a temperature range of 200 to 400° C. A semiconductor device can thereby be provided that has highly reliable wiring, in which the adhesion to the barrier metal film in the copper interface is enhanced, copper diffusion in the interface is suppressed, and electromigration and stress migration are prevented.

摘要翻译： 在形成于半导体衬底顶部的绝缘膜上形成沟槽，并且在沟槽的表面上形成阻挡金属膜。 在阻挡金属膜上形成铜或铜合金膜之后，在室温至400℃的范围内形成氧化反应的标准能量为负的氧吸收膜，其中绝对值 的标准形成能量大于形成阻挡金属膜的能量，并且组件在200至400℃的温度范围内被加热。由此可以提供具有高可靠性布线的半导体器件，其中 增加了铜界面对阻挡金属膜的附着力，抑制了界面的铜扩散，防止了电迁移和应力迁移。

公开(公告)号：US07701060B2

公开(公告)日：2010-04-20

申请号：US10558367

申请日：2004-05-28

申请人： Munehiro Tada ,  Yoshihiro Hayashi ,  Yoshimichi Harada ,  Fuminori Ito ,  Hiroto Ohtake ,  Tatsuya Usami

发明人： Munehiro Tada ,  Yoshihiro Hayashi ,  Yoshimichi Harada ,  Fuminori Ito ,  Hiroto Ohtake ,  Tatsuya Usami

IPC分类号： H01L23/48

CPC分类号： H01L23/53295 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are provided with a wiring structure and a method for manufacturing the same wherein in a wiring structure of multi-layered wiring in which a metal wiring is formed on a substrate forming a semiconductor element thereby obtaining connection of the element, no damage to insulation property between the abutting wirings by occurrence of leakage current and no deterioration of insulation resistance property between the abutting wirings are achieved in case that fine metal wiring is formed in a porous insulation film. The insulation barrier layer 413 is formed between an interlayer insulation film and the metal wiring, in the metal wiring structure on the substrate forming the semiconductor element. The insulation barrier layer enables to reduce leakage current between the abutting wirings and to elevate the insulation credibility.

摘要翻译： 提供一种布线结构及其制造方法，其中在形成半导体元件的基板上形成金属布线的多层布线的布线结构中，从而获得元件的连接，不会损坏绝缘性能 在多孔绝缘膜中形成细小的金属布线的情况下，可以通过发生漏电流而在邻接布线之间形成邻接布线之间的绝缘电阻特性。 在形成半导体元件的基板上的金属布线结构中，在层间绝缘膜和金属布线之间形成绝缘阻挡层413。 绝缘阻挡层能够减少邻接布线之间的泄漏电流并提高绝缘可靠性。

公开(公告)号：US07615252B2

公开(公告)日：2009-11-10

申请号：US11083952

申请日：2005-03-21

申请人： Yoshihiro Hayashi ,  Akira Nakamura ,  Taku Naitou

发明人： Yoshihiro Hayashi ,  Akira Nakamura ,  Taku Naitou

IPC分类号： B05D1/32 ,  C09D11/02

CPC分类号： C09D11/0235

摘要： There are disclosed a stencil printing ink having an ink thread-forming length when a 15 mm diameter chrome steel ball is pulled out of the ink at 150 mm/s of 30 mm or longer at 23° C.; and a stencil printing ink comprising a water-based ink comprising an unsaturated straight-chain carboxylic acid-based water-soluble polymer.

摘要翻译： 公开了一种在15mm直径的铬钢球以230mm / s为30mm或更长的23℃从油墨中拉出的具有油墨成型长度的模版印刷油墨; 以及包含含有不饱和直链羧酸类水溶性聚合物的水性油墨的模版印刷油墨。

公开(公告)号：US20090267198A1

公开(公告)日：2009-10-29

申请号：US12299375

申请日：2007-05-16

申请人： Munehiro Tada ,  Hiroto Ohtake ,  Fuminori Ito ,  Yoshihiro Hayashi ,  Hironori Yamamoto

发明人： Munehiro Tada ,  Hiroto Ohtake ,  Fuminori Ito ,  Yoshihiro Hayashi ,  Hironori Yamamoto

IPC分类号： H01L29/06 ,  H01L21/768 ,  B05C11/00 ,  C23F1/08

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a multilayer wiring technology by which high adhesiveness and high insulation reliability between wirings are obtained, while maintaining effective low capacitance between wirings. A semiconductor device is characterized in that a first insulating film is an insulating film formed of at least one layer which contains a siloxane structure containing silicon, oxygen and carbon; the siloxane structure in the inner part of the first insulating film contains a larger number of carbon atoms than the number of silicon atoms; and a modified layer which containing a smaller number of carbon atoms and a larger number of oxygen atoms per unit volume than the inner part of the first insulating film is formed on at least one of an interface between the first insulating film and the metal and an interface between the first insulating film and a second insulating film.

摘要翻译： 本发明提供了一种多层布线技术，其中在布线之间保持有效的低电容的同时获得了布线之间的高粘合性和高绝缘可靠性。 半导体器件的特征在于，第一绝缘膜是由至少一层包含含有硅，氧和碳的硅氧烷结构的层形成的绝缘膜; 第一绝缘膜的内部的硅氧烷结构含有比硅原子数多的碳原子数; 并且在第一绝缘膜和金属之间的界面中的至少一个上形成有含有比第一绝缘膜的内部少的碳原子数和更多数量的单位体积的氧原子的改性层， 第一绝缘膜和第二绝缘膜之间的界面。

公开(公告)号：US20090265446A1

公开(公告)日：2009-10-22

申请号：US12216208

申请日：2008-07-01

申请人： Yoshihiro Hayashi ,  Tadashi Takeuchi

发明人： Yoshihiro Hayashi ,  Tadashi Takeuchi

IPC分类号： G06F15/16

CPC分类号： H04N7/17318 ,  H04N21/21 ,  H04N21/23 ,  H04N21/262

摘要： A content delivery system includes a delivery server, a storage apparatus having a logical unit for storing data regarding content items, and a management apparatus having a content management unit for managing a delivery server. The delivery server includes a conversion unit and a delivery unit. The conversion units acquires original data regarding a content item from an external origin server in response to a content addition request from the content management unit, converts the original data to data for delivery, and stores the content data for delivery in the first logical unit. The delivery unit reads, in response to a content delivery request from the client, the data for delivery from the logical unit and transmits it to the client.

摘要翻译： 内容传送系统包括传送服务器，具有用于存储关于内容项的数据的逻辑单元的存储装置，以及具有用于管理传送服务器的内容管理单元的管理装置。 递送服务器包括转换单元和递送单元。 转换单元响应于来自内容管理单元的内容添加请求从外部来源服务器获取关于内容项的原始数据，将原始数据转换为要传送的数据，并将用于传送的内容数据存储在第一逻辑单元中。 交付单元响应于来自客户端的内容递送请求从逻辑单元读取用于传送的数据并将其发送给客户端。

公开(公告)号：US20090246538A1

公开(公告)日：2009-10-01

申请号：US12374390

申请日：2007-07-23

申请人： Hironori Yamamoto ,  Fuminori Ito ,  Munehiro Tada ,  Yoshihiro Hayashi

发明人： Hironori Yamamoto ,  Fuminori Ito ,  Munehiro Tada ,  Yoshihiro Hayashi

IPC分类号： B32B9/00 ,  H01L21/312 ,  C07F7/21

CPC分类号： C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3124 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76835 ,  H01L2221/1047 ,  Y10T428/31663

摘要： A method of forming a porous insulation film uses an organic silica material gas having a 3-membered SiO cyclic structure and a 4-membered SiO cyclic structure, or an organic silica material gas having a 3-membered SiO cyclic structure and a straight-chain organic silica structure, and uses a plasma reaction in the filming process. A porous interlevel dielectric film having a higher strength and a higher adhesive property can be obtained.

摘要翻译： 形成多孔绝缘膜的方法使用具有3元SiO环状结构和4元SiO环状结构的有机二氧化硅材料气体或具有3元SiO环状结构和直链的有机二氧化硅材料气体 有机二氧化硅结构，并且在成膜过程中使用等离子体反应。 可以获得具有更高强度和更高粘附性的多孔层间电介质膜。