公开(公告)号：US07229864B2

公开(公告)日：2007-06-12

申请号：US10984391

申请日：2004-11-09

申请人： Koichiro Tanaka

发明人： Koichiro Tanaka

IPC分类号： H01L21/84

CPC分类号： H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1285 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： By using lasers having different wavelengths in laser annealing of an amorphous semiconductor film, the amorphous semiconductor film can be crystallized and the crystallinity of the crystallized film is improved. A laser 126 to 370 nm in wavelength is used first to subject an amorphous semiconductor film to laser annealing, thereby obtaining a crystalline semiconductor film. In desirable laser annealing, a subject surface is irradiated with a laser beam processed by an optical system into a linear laser beam that is linear in section on the subject surface. Next, a laser 370 to 650 nm in wavelength is used to irradiate the above crystalline semiconductor film by again processing the laser beam into a linear beam through an optical system. A crystalline semiconductor film thus obtained has an excellent crystallinity. If this crystalline semiconductor film is used to form an active layer of a TFT, an electric characteristic of the TFT can be improved.

公开(公告)号：US07221451B2

公开(公告)日：2007-05-22

申请号：US10926351

申请日：2004-08-26

申请人： Hideyuki Ohtake ,  Koichiro Tanaka ,  Masaya Nagai ,  Junpei Yamashita ,  Kumiko Yamashita

发明人： Hideyuki Ohtake ,  Koichiro Tanaka ,  Masaya Nagai ,  Junpei Yamashita ,  Kumiko Yamashita

IPC分类号： G01J3/28

CPC分类号： G01J3/12 ,  G01J3/4338 ,  G01J11/00 ,  G01N21/3581 ,  G01N21/3586

摘要： A method for measuring a spectrum of a terahertz pulse includes generating a terahertz pulse using an ultrashort pulsed pumping light, generating a white light pulse using an ultrashort pulsed probe light, stretching and chirping the white light pulse modulating the chirped white light pulse such that the terahertz pulse and the chirped white light pulse irradiate into an electro-optic crystal synchronously, so that the chirped white light pulse is modulated by an electric field signal induced at the electro-optic crystal irradiated by the terahertz pulse, detecting a spectrum of chirped white light pulse modulated at the electro-optic modulating step by a multi-channeled detector, analyzing an electric field of the teraherz pulse irradiated to the electro-optic crystal from the spectrum of the chirped white light pulse detected by the multi-channeled spectrum detecting step, and transforming the analyzed electric field signal into a frequency spectrum of the terahertz pulse.

摘要翻译： 用于测量太赫兹脉冲的频谱的方法包括使用超短脉冲泵浦光产生太赫脉冲，使用超短脉冲探测光产生白光脉冲，拉伸和啁啾调制啁啾的白光脉冲的白光脉冲，使得 啁啾脉冲和啁啾的白光脉冲同步地照射到电光晶体中，使得啁啾的白光脉冲被在由太赫兹脉冲辐射的电光晶体处感应的电场信号调制，检测啁啾的白色光谱 通过多通道检测器在电光调制步骤中调制光脉冲，从由多通道频谱检测步骤检测的啁啾白光脉冲的频谱分析辐射到电光晶体的太赫兹脉冲的电场 并将分析的电场信号变换为太赫兹脉冲的频谱。

公开(公告)号：US20070059949A1

公开(公告)日：2007-03-15

申请号：US11595921

申请日：2006-11-13

申请人： Shunpei Yamazaki ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Koichiro Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/034 ,  B23K26/123 ,  B23K26/1435 ,  B23K26/1436 ,  B23K26/147 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/3226 ,  H01L29/66757 ,  Y10S438/935

摘要： First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface. Then, an oxidized film 105a formed by the irradiation of the first laser light is removed. After that, an inert gas with an oxygen density of 10 ppm or below is blown thereto, and, at the same time, second laser light is irradiated thereto (the energy density is higher than that of the irradiation of the first laser light). Thus, the surface of the semiconductor film 102b is flattened, and a semiconductor film 102c having fewer depressions and projections on the surface can be obtained.

摘要翻译： 为了得到在氧气中含有大的凹凸的半导体膜102b，将第一激光照射到能量密度为400〜500mj / cm 2的半导体膜102中 表面。 然后，去除通过照射第一激光形成的氧化膜105a。 之后，吹入氧浓度为10ppm以下的惰性气体，同时照射第二激光（能量密度高于第一激光的照射能量密度）。 因此，半导体膜102b的表面被平坦化，并且可以获得在表面上具有较少凹凸的半导体膜102c。

公开(公告)号：US20070015323A1

公开(公告)日：2007-01-18

申请号：US11513054

申请日：2006-08-31

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

IPC分类号： H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是 能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。 形成具有条状或矩形形状的凹凸和凹凸。 然后将连续波激光照射到沿绝缘膜条纹形状的凹凸形状的绝缘膜上形成的半导体膜上，或者沿着矩形的长轴方向或横轴方向照射。 另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波激光。

公开(公告)号：US20070000428A1

公开(公告)日：2007-01-04

申请号：US11514969

申请日：2006-09-05

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Satoshi Murakami ,  Mai Akiba

IPC分类号： C30B15/14

CPC分类号： H01L27/1285 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/0738 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/76894 ,  H01L27/1296 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/5284 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

摘要翻译： 根据掩模掌握半导体膜上的应该留在基板上的每个区域。 然后，确定要用激光扫描的每个区域，使得至少要通过图案化获得的区域结晶，并且使光点撞击要扫描的区域，从而部分地使半导体膜结晶。 光束点的低输出能量的每个部分被狭缝屏蔽。 在本发明中，激光不被扫描并照射到半导体膜的整个表面上，而被扫描，使得至少每个不可缺少的部分被最终结晶化。 利用上述结构，可以在半导体膜结晶之后通过图案化节省将激光照射到要去除的每个部分上所需的时间。

公开(公告)号：US07148507B2

公开(公告)日：2006-12-12

申请号：US11013539

申请日：2004-12-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/84 ,  H01L31/36

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US07148092B2

公开(公告)日：2006-12-12

申请号：US10352066

申请日：2003-01-28

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

IPC分类号： H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.

公开(公告)号：US07139534B2

公开(公告)日：2006-11-21

申请号：US10790836

申请日：2004-03-03

申请人： Mitsuru Tanabe ,  Koichiro Tanaka

发明人： Mitsuru Tanabe ,  Koichiro Tanaka

IPC分类号： H04B1/02

CPC分类号： H03F1/0227 ,  H04B1/0475

摘要： A transmission circuit includes: a modulated signal generator; a modulated signal line where an OFDM modulated wave flows; a detector; a phase component line for transmitting a phase component; an amplitude component line for transmitting an amplitude component; a level judging circuit for judging the level of the amplitude component; a constant-voltage supply line; first and second selectors; a quadrature converter; and an RF power amplifier. An EER or pseudo-EER technique is performed in a region where the RF input-output characteristic of the RF power amplifier with an EER technique exhibits a linear response, whereas usual modulation is performed in a region where a nonlinear response is exhibited. The modulation method is switched using the level judging circuit and the selectors with reference to a threshold value which is the boundary between the region where the linear response is exhibited and the region where the nonlinear response is exhibited.

摘要翻译： 发送电路包括：调制信号发生器; OFDM调制波流动的调制信号线; 检测器 用于发送相位分量的相位分量线; 用于发送振幅分量的幅度分量线; 用于判断振幅分量的电平的电平判断电路; 恒压供电线; 第一和第二选择器; 正交转换器 和RF功率放大器。 在具有EER技术的RF功率放大器的RF输入输出特性呈现线性响应的区域中执行EER或伪EER技术，而在显示非线性响应的区域中执行通常的调制。 参照作为显示线性响应的区域与显示非线性响应的区域之间的边界的阈值，使用电平判定电路和选择器来切换调制方式。

公开(公告)号：US20060246693A1

公开(公告)日：2006-11-02

申请号：US11412075

申请日：2006-04-27

申请人： Koichiro Tanaka ,  Hirotada Oishi

发明人： Koichiro Tanaka ,  Hirotada Oishi

IPC分类号： H01L21/36 ,  B23K26/00 ,  H01L21/84

CPC分类号： H01L21/02686 ,  B23K26/0006 ,  B23K26/0608 ,  B23K26/0624 ,  B23K26/067 ,  B23K26/0738 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/3244

摘要： It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the split beams to reduce optical interference. The optical path difference is set to have a length equivalent to the pulse width of the megahertz laser beam or more and less than a length equivalent to the pulse repetition interval; thus, optical interference can be suppressed with a very short optical path difference. Therefore, laser beams can be applied continuously and efficiently without energy deterioration.

公开(公告)号：US20060166470A1

公开(公告)日：2006-07-27

申请号：US11387793

申请日：2006-03-24

申请人： Koichiro Tanaka

发明人： Koichiro Tanaka

IPC分类号： B23K26/00 ,  H01L21/20

CPC分类号： H01L21/02683 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/082 ,  B23K26/0853 ,  G21K5/10 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268

摘要： When a CW laser is irradiated to a semiconductor film while scanning relatively during a production process of a semiconductor device, elongated crystalline particles extending in the scanning direction are formed. The semiconductor film thus formed has characteristics substantially equal to a single crystal in the scanning direction. However, since the CW lasers is highly likely to induce interference, uniform laser irradiation is difficult to conduct. In this regard, interference of a laser beam can be decreased by setting the angle of incidence of the laser beam with respect to the surface of the semiconductor film is to be a desired angle other than 0°. In general, the output of the CW laser is small, so that the laser beam has to be scanned reciprocally in order to irradiate a region of a large area. However, as the angle of incidence is not set at 0°, the effect of the laser beam irradiation differs between the outward trip and the return trip. To decrease this, the angle of incidence is made variable so that the condition of the laser beam irradiation can be equal between the outward trip and the return trip.