SYSTEM AND METHOD FOR DIRECT FIBER-END SURFACE STRUCTURING
    81.
    发明申请
    SYSTEM AND METHOD FOR DIRECT FIBER-END SURFACE STRUCTURING 有权
    直接光纤端面结构的系统和方法

    公开(公告)号:US20150090690A1

    公开(公告)日:2015-04-02

    申请号:US14498001

    申请日:2014-09-26

    IPC分类号: H01J37/32 G02B6/25

    摘要: A fiber-end surface structuring chamber or system having a main body with multiple ports including a fiber-holder port, a process port that is either a stamp/shim holder port or a plasma etching enabler port, an evacuation port, a gas delivery port, and one or more observation ports, where the fiber-end surface structuring system forms structures directly into the end of the fiber to enhance transmission of light over a wide range of wavelengths and increase the laser damage threshold.

    摘要翻译: 一种光纤端面结构室或系统,其具有多个端口的主体,该端口包括光纤保持器端口,作为印模/垫片支架端口或等离子体蚀刻使能端口的处理端口,抽真空口,气体输送端口 以及一个或多个观察端口,其中光纤端表面结构系统直接形成结构到光纤的端部,以增强光在宽波长范围内的透射并增加激光损伤阈值。

    CONTROLLED DEPOSITION OF PHOTOVOLTAIC THIN FILMS USING INTERFACIAL WETTING LAYERS
    82.
    发明申请
    CONTROLLED DEPOSITION OF PHOTOVOLTAIC THIN FILMS USING INTERFACIAL WETTING LAYERS 审中-公开
    使用界面湿润层控制光伏薄膜的沉积

    公开(公告)号:US20140076402A1

    公开(公告)日:2014-03-20

    申请号:US14026130

    申请日:2013-09-13

    IPC分类号: H01L31/032 H01L31/18

    摘要: A method for forming a photovoltaic device by depositing at least one wetting layer onto a substrate where the wetting layer is ≦100 nm and sputtering a photovoltaic material onto the wetting layer where the wetting layer interacts with the photovoltaic material. Also disclosed is the related photovoltaic device made by this method. The wetting layer may comprise any combination of In2Se3, CuSe2, Cu2Se, Ga2Se3, In2S3, CuS2, Cu2S, Ga2S3, CuInSe2, CuGaSe2, InxGa2-xSe3 where 0≦x≦2, CuInS2, CuGaS2, InxGa2-xS3 where 0≦x≦2, In2Se3-xSx where 0≦x≦3, CuSe2-xSx where 0≦x≦2, Cu2Se1-xSx, (0≦x≦1), Ga2Se3-xSx where 0≦x≦3, and InxGa2-xS3-ySy where 0≦x≦2, 0≦y≦3. The photovoltaic material may be a CIGS (copper indium gallium diselenide) material or a variation of a CIGS material where a CIGS component is replaced or supplemented with any combination of sulfur, tellurium, aluminum, and silver.

    摘要翻译: 一种通过将至少一个润湿层沉积到衬底上而形成光伏器件的方法,其中润湿层为100nm,并将光伏材料溅射到润湿层与光伏材料相互作用的润湿层上。 还公开了通过该方法制造的相关光伏器件。 润湿层可以包括In2Se3,CuSe2,Cu2Se,Ga2Se3,In2S3,CuS2,Cu2S,Ga2S3,CuInSe2,CuGaSe2,InxGa2-xSe3的任何组合,其中0和nlE; x和nlE; 2,CuInS2,CuGaS2,InxGa2-xS3,其中0和nlE; x和nlE; 2,In2Se3-xSx其中0≦̸ x≦̸ 3,CuSe2-xSx其中0和nlE; x和nlE; 2,Cu2Se1-xSx,(0≦̸ x≦̸ 1),Ga2Se3-xSx其中0和nlE; x和n1E; 3和InxGa2-xS3-ySy 其中0≦̸ x≦̸ 2,0≦̸ y≦̸ 3。 光电材料可以是CIGS(铜铟镓硒化物)材料或CIGS材料的变体,其中CIGS组分被硫,碲,铝和银的任何组合替代或补充。

    Thermally stable IR-transmitting chalcogenide glass
    90.
    发明授权
    Thermally stable IR-transmitting chalcogenide glass 有权
    热稳定的红外透射硫族化物玻璃

    公开(公告)号:US07891215B2

    公开(公告)日:2011-02-22

    申请号:US12818185

    申请日:2010-06-18

    IPC分类号: C03C3/32 C03C13/00

    摘要: A thermally stable chalcogenide glass, a process for making the same, and an optical fiber drawn therefrom are provided. A chalcogenide glass having the composition Ge(5−y)As(32−x)Se(59+x)Te(4+y) (0≦y≦1 and 0≦x≦2) is substantially free from crystallization when it is heated past the glass transition temperature Tg or drawn into optical fibers. A process for making the thermally stable chalcogenide glass includes purifying the components to remove oxides and scattering centers, batching the components in a preprocessed distillation ampoule, gettering oxygen impurities from the mixture, and heating the components to form a glass melt. An optical fiber formed from the chalcogenide glass is substantially free from crystallization and exhibits low signal loss in the near-infrared region, particularly at wavelengths of about 1.55 μm.

    摘要翻译: 提供了热稳定的硫族化物玻璃,其制造方法和从其中提取的光纤。 具有Ge(5-y)As(32-x)Se(59 + x)Te(4 + y)(0≦̸ y≦̸ 1和0≦̸ x≦̸ 2)组成的硫族化物玻璃基本上没有结晶 被加热超过玻璃化转变温度Tg或拉制成光纤。 制造热稳定的硫族化物玻璃的方法包括纯化组分以除去氧化物和散射中心,将组分在预处理的蒸馏安瓿中进行配料,从混合物中吸收氧杂质,并加热组分以形成玻璃熔体。 由硫族化物玻璃形成的光纤基本上没有结晶,并且在近红外区域特别是在约1.55μm的波长下表现出低信号损失。