Compensating for induced strain in the channels of metal gate transistors
    81.
    发明申请
    Compensating for induced strain in the channels of metal gate transistors 审中-公开
    补偿金属栅晶体管通道中的诱导应变

    公开(公告)号:US20060237801A1

    公开(公告)日:2006-10-26

    申请号:US11110485

    申请日:2005-04-20

    IPC分类号: H01L29/15

    摘要: Strained channel field effect transistors may have a threshold voltage shift. This threshold voltage shift may be compensated for by adjusting channel doping. But this also adversely affects mobility. The threshold voltage shift may be compensated, without adversely affecting mobility, by tailoring the workfunction of a metal gate electrode used in the transistor to adequately compensate for that threshold voltage shift. For example, in some embodiments, an appropriate metal may be selected with a slightly higher workfunction or, in other cases, the workfunction of a selected metal may be adjusted by, for example, doping the metal gate electrode with a material which increases the workfunction of the gate electrode.

    摘要翻译: 应变通道场效应晶体管可具有阈值电压偏移。 该阈值电压偏移可以通过调整沟道掺杂来补偿。 但这也对行动不利。 可以通过调整在晶体管中使用的金属栅电极的功函数来充分补偿该阈值电压偏移来补偿阈值电压偏移而不会不利地影响迁移率。 例如,在一些实施例中,可以选择具有略高的功函数的合适的金属,或者在其他情况下,可以通过例如用增加功函数的材料掺杂金属栅电极来调整所选金属的功函数 的栅电极。