公开(公告)号：US20130001506A1

公开(公告)日：2013-01-03

申请号：US13355692

申请日：2012-01-23

申请人： Motoyuki SATO ,  Yoshiaki Asao ,  Takashi Obara ,  Takashi Nakazawa

发明人： Motoyuki SATO ,  Yoshiaki Asao ,  Takashi Obara ,  Takashi Nakazawa

IPC分类号： H01L27/26 ,  H01L47/00

CPC分类号： H01L27/228

摘要： According to one embodiment, a resistance change memory includes resistance change elements, vias and sidewall insulating layers, the elements and the vias provided alternately in a first direction and a second direction orthogonal to the first direction, and the sidewall insulating layers provided on sidewalls of the elements. The elements are provided in a lattice pattern having a constant pitch. A thickness of each of the sidewall insulating layers in a direction orthogonal to the sidewalls is a value for contacting the sidewall insulating layers each other or more to form holes between the sidewall insulating layers. The vias are provided in the holes respectively.

摘要翻译： 根据一个实施例，电阻变化存储器包括电阻变化元件，通路和侧壁绝缘层，沿与第一方向正交的第一方向和第二方向上交替设置的元件和通孔，以及设置在第二方向上的侧壁绝缘层 元素。 元件以具有恒定间距的格子图案提供。 每个侧壁绝缘层在与侧壁正交的方向上的厚度是用于使侧壁绝缘层彼此接触或接触以在侧壁绝缘层之间形成孔的值。 通孔分别设置在孔中。

公开(公告)号：US08111538B2

公开(公告)日：2012-02-07

申请号：US12273874

申请日：2008-11-19

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshihisa Iwata

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Yoshihisa Iwata

IPC分类号： G11C11/00

CPC分类号： G11C7/20 ,  G11C11/16 ,  G11C13/0004 ,  G11C13/0007 ,  G11C29/028 ,  G11C29/50 ,  G11C2013/0083 ,  G11C2029/1206 ,  G11C2029/5002 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/79

摘要： A semiconductor memory device includes a memory cell array having a plurality of memory cells which are set into low-resistance states/high-resistance states according to “0” data/“1” data. An allocation of the “0” data/“1” data and the low-resistance state/high-resistance state is switched when a power source is turned on.

摘要翻译： 半导体存储器件包括具有根据“0”数据/“1”数据被设置成低电阻状态/高电阻状态的多个存储器单元的存储单元阵列。 当电源接通时，切换“0”数据/“1”数据和低电阻状态/高电阻状态的分配。

公开(公告)号：US07990752B2

公开(公告)日：2011-08-02

申请号：US12476950

申请日：2009-06-02

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C5/063 ,  G11C11/1659 ,  G11C11/1673

摘要： A semiconductor memory of an aspect of the present invention including a main bit line, a first and second sub-bit line, a first resistive memory element which has a first terminal being connected with the main bit line, a first select transistor which has one end of a first current path being connected with the second terminal of the first resistive memory element and the other end of the first current path being connected with the first sub-bit line, a second resistive memory element which has a third terminal being connected with the main bit line, and a second select transistor which has one end of a second current path being connected with the fourth terminal of the second resistive memory element and the other end of the second current path being connected with the second sub-bit line.

摘要翻译： 本发明的一个方面的半导体存储器，包括主位线，第一和第二子位线，具有与主位线连接的第一端子的第一电阻性存储元件，具有一个第一选择晶体管的第一选择晶体管 第一电流路径的端部与第一电阻性存储元件的第二端子连接，并且第一电流通路的另一端与第一子位线连接;第二电阻存储器元件，其具有与第 主位线和第二选择晶体管，其具有与第二电阻性存储器元件的第四端子连接的第二电流通路的一端，并且第二电流通路的另一端与第二子位线连接。

公开(公告)号：US07965542B2

公开(公告)日：2011-06-21

申请号：US12015015

申请日：2008-01-16

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C2213/75 ,  Y10S977/935

摘要： A magnetic random access memory includes a memory cell element which includes a first fixed layer, a first recording layer in which a magnetization direction reverses on the basis of a first threshold value, and a first nonmagnetic layer formed between the first fixed layer and the first recording layer, a first interconnection connected to one terminal of the memory cell element, a transistor whose current path has one end connected to the other terminal of the memory cell element, a second interconnection connected to the other end of the current path, and a first resistance change element electrically connected to the memory cell element, and having a resistance value which changes on the basis of a second threshold value.

摘要翻译： 磁性随机存取存储器包括存储单元元件，其包括第一固定层，基于第一阈值使磁化方向反转的第一记录层和形成在第一固定层与第一固定层之间的第一非磁性层 记录层，连接到存储单元元件的一个端子的第一互连，其电流通路的一端连接到存储单元元件的另一端的晶体管，连接到电流通路的另一端的第二互连，以及 第一电阻变化元件电连接到存储单元元件，并且具有基于第二阈值而改变的电阻值。

公开(公告)号：US07932513B2

公开(公告)日：2011-04-26

申请号：US12043617

申请日：2008-03-06

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Toshihiko Nagase

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Toshihiko Nagase

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L39/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/1675 ,  H01L27/22 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.

摘要翻译： 磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件， 具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层 所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

公开(公告)号：US07706175B2

公开(公告)日：2010-04-27

申请号：US11839265

申请日：2007-08-15

申请人： Keiji Hosotani ,  Yoshiaki Asao ,  Akihiro Nitayama

发明人： Keiji Hosotani ,  Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.

摘要翻译： 磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及 具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜 在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接 连接磁阻效应元件和第一触点。

公开(公告)号：US20100047930A1

公开(公告)日：2010-02-25

申请号：US12605072

申请日：2009-10-23

申请人： Keiji HOSOTANI ,  Yoshiaki Asao ,  Akihiro Nitayama

发明人： Keiji HOSOTANI ,  Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： H01L21/00

CPC分类号： H01L27/228 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magnetic random access memory includes a first wiring, a second wiring formed above and spaced apart from the first wiring, a magnetoresistive effect element formed between the first wiring and the second wiring, formed in contact with an upper surface of the first wiring, and having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer, a metal layer formed on the magnetoresistive effect element and integrated with the magnetoresistive effect element to form stacked layers, a first side insulating film formed on side surfaces of the metal layer, the magnetoresistive effect element, and the first wiring, a first contact formed in contact with a side surface of the first side insulating film, and a third wiring formed on the metal layer and the first contact to electrically connect the magnetoresistive effect element and the first contact.

摘要翻译： 磁性随机存取存储器包括第一布线，形成在第一布线上方并与第一布线间隔开的第二布线;形成在与第一布线的上表面接触形成的第一布线和第二布线之间的磁阻效应元件，以及 具有形成在固定层和记录层之间的固定层，记录层和非磁性层，形成在磁阻效应元件上并与磁阻效应元件集成以形成堆叠层的金属层，形成第一侧绝缘膜 在金属层的侧表面，磁阻效应元件和第一布线，与第一侧绝缘膜的侧表面接触形成的第一触点和形成在金属层上的第三布线和第一触点电连接 连接磁阻效应元件和第一触点。

公开(公告)号：US20090296451A1

公开(公告)日：2009-12-03

申请号：US12406898

申请日：2009-03-18

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/00 ,  G11C11/416 ,  G11C7/00 ,  H01L29/66

CPC分类号： G11C13/0069 ,  G11C13/0002 ,  G11C13/0097 ,  G11C16/0466 ,  G11C2013/0078 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/165

摘要： A resistance change memory includes a first interconnection, a second interconnection, a first resistance change element which has a first electrode, a second electrode, and a first tunnel insulating film provided between the first electrode and the second electrode, the first tunnel insulating film including a first trap region formed by introducing defects to trap holes or electrons, and the second electrode being connected to the first interconnection, and a first transistor whose current path has one end connected to the first electrode and the other end connected to the second interconnection.

摘要翻译： 电阻变化存储器包括第一互连，第二互连，第一电阻改变元件，其具有设置在第一电极和第二电极之间的第一电极，第二电极和第一隧道绝缘膜，第一隧道绝缘膜包括 通过引入缺陷以捕获空穴或电子而形成的第一陷阱区域，以及第二电极连接到第一互连件，以及第一晶体管，其电流通路的一端连接到第一电极，而另一端连接到第二互连。

公开(公告)号：US20090174007A1

公开(公告)日：2009-07-09

申请号：US12339814

申请日：2008-12-19

申请人： Jun NISHIMURA ,  Yoshiaki Asao

发明人： Jun NISHIMURA ,  Yoshiaki Asao

IPC分类号： H01L29/68

CPC分类号： H01L27/108 ,  H01L27/10802 ,  H01L29/7841

摘要： A semiconductor memory device comprising: a support substrate; an insulating film formed on the support substrate; a semiconductor film formed on the insulating film; a gate insulating film formed on the semiconductor film; a gate electrode film formed on the gate insulating film; and a source region and a drain region formed in the semiconductor film so as to sandwich the gate insulating film in a gate length direction, the source and drain regions contacting the insulating film at the bottom surface, and the semiconductor memory device storing data corresponding to the amount of charges accumulated in the semiconductor film surrounded by the insulating film, the gate insulating film, and the source and drain regions and electrically floated, wherein a border length between the source region and the gate insulating film contiguous to each other is different from a border length between the drain region and the gate insulating film to each other.

摘要翻译： 一种半导体存储器件，包括：支撑衬底; 形成在所述支撑基板上的绝缘膜; 形成在绝缘膜上的半导体膜; 形成在半导体膜上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极膜; 以及形成在所述半导体膜中的源极区域和漏极区域，以便在栅极长度方向夹着所述栅极绝缘膜，所述源极和漏极区域在所述底面处与所述绝缘膜接触，并且所述半导体存储器件存储对应于 在由绝缘膜，栅极绝缘膜以及源极和漏极区域包围的半导体膜中积累的电荷量被电浮动，其中源极区域和栅极绝缘膜彼此相邻的边界长度不同于 漏极区域和栅极绝缘膜之间的边界长度彼此。

公开(公告)号：US07505306B2

公开(公告)日：2009-03-17

申请号：US11609487

申请日：2006-12-12

申请人： Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Yoshiaki Asao

发明人： Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory device includes a magnetization fixed layer provided above a semiconductor substrate surface and having a fixed magnetization direction. A first magnetization free layer is provided above the magnetization fixed layer, has variable magnetization direction, and has an easy magnetization axis extending along a plane intersecting the substrate surface and along a direction neither parallel nor perpendicular to the substrate surface. A second magnetization free layer is provided above the first magnetization free layer, has a magnetization that antiferromagnetically couples with the first magnetization free layer. A first write line is placed above and electrically connected to the second magnetization free layer, and extends in a direction that pierces the plane. A second write line faces the first and/or second magnetization free layer, and extends along the substrate surface and the plane and in a direction perpendicular to the first write line.

摘要翻译： 磁存储器件包括设置在半导体衬底表面上方并且具有固定的磁化方向的磁化固定层。 第一磁化自由层设置在磁化固定层的上方，具有可变的磁化方向，并且具有沿着与衬底表面相交的平面并且沿着不平行或垂直于衬底表面的方向延伸的易磁化轴。 第二磁化自由层设置在第一磁化自由层的上方，具有与第一磁化自由层反铁磁耦合的磁化。 第一写入线被放置在第二磁化自由层的上方并且电连接到第二写入线，并且沿着穿透该平面的方向延伸。 第二写入线面向第一和/或第二磁化自由层，并且沿着衬底表面和平面以及垂直于第一写入线的方向延伸。