公开(公告)号：US5378548A

公开(公告)日：1995-01-03

申请号：US713285

申请日：1991-06-11

申请人： Hideo Torii ,  Eiji Fujii ,  Masumi Hattori ,  Masaki Aoki ,  Kiyoshi Kuribayashi

发明人： Hideo Torii ,  Eiji Fujii ,  Masumi Hattori ,  Masaki Aoki ,  Kiyoshi Kuribayashi

IPC分类号： G11B5/725 ,  G11B5/73 ,  G11B5/738 ,  G11B5/66

CPC分类号： G11B5/667 ,  G11B5/725 ,  G11B5/7325 ,  G11B5/738 ,  Y10S428/90

摘要： A magnetic recording medium, comprising; a 2-layer film formed on a glass disk substrate as an under layer composed of an amorphous oxide or NaCl oxides like a NiO or CoO and the like, or any soft magnetic oxide of Mn-Zn ferrite, Ni-Zn ferrite and the like, or a combination of those 2 materials; a magnetic recording medium formed thereon composed of a Co ferrite perpendicular magnetic film of a columnar structure; and a structure formed thereon with a lubricant layer medium. This magnetic recording medium is used for a magnetic rigid disk apparatus. The substrate is made by press-molding the glass plate at a high temperature. The under layer film and Co ferrite film are composed of vapors of organic material compounds and oxygen as their raw materials, and made by a plasma assisted CVD method.

摘要翻译： 一种磁记录介质，包括： 形成在作为由NiO或CoO等的无定形氧化物或NaCl氧化物构成的下层的玻璃盘基板上的2层膜，或Mn-Zn铁氧体，Ni-Zn铁氧体等的任何软磁性氧化物 ，或这两种材料的组合; 形成在其上的磁记录介质，由柱状结构的Co铁氧体垂直磁性膜构成; 以及在其上形成有润滑剂层介质的结构。 该磁记录介质用于磁性刚性盘装置。 基板通过在高温下对玻璃板进行压制成型而制成。 底层膜和Co铁氧体膜由有机材料化合物的蒸气和氧气作为原料组成，并通过等离子体辅助CVD法制成。

公开(公告)号：US5286975A

公开(公告)日：1994-02-15

申请号：US889700

申请日：1992-05-29

申请人： Toshiaki Ogura ,  Nahoko Shimamura ,  Masaki Aoki

发明人： Toshiaki Ogura ,  Nahoko Shimamura ,  Masaki Aoki

IPC分类号： G01J5/34 ,  H01L37/02 ,  G01J5/02

CPC分类号： H01L37/02 ,  G01J5/34

摘要： A pyro-electric type infrared-ray sensor comprises a pyro-electric thin film such as Pb TiO.sub.3, an upper electrode of Al film formed on the upper surface of the pyro-electric thin film, a lower electrode thin film of Al formed on the bottom surface thereof and an organic thin film which covers the upper surface, and the sensor further comprises an infrared light reflection member, at least partially on the surface of the organic thin film.

摘要翻译： 热电型红外线传感器包括热电薄膜，例如Pb TiO 3，在热电薄膜的上表面上形成的Al膜的上电极，形成在该热电薄膜上的下电极薄膜 其表面和覆盖上表面的有机薄膜，并且传感器还包括至少部分地在有机薄膜的表面上的红外光反射构件。

公开(公告)号：US4382454A

公开(公告)日：1983-05-10

申请号：US244643

申请日：1981-03-17

申请人： Masaki Aoki ,  Shigeru Yoshida ,  Hiroshi Yamazoe ,  Masahiro Nagasawa

发明人： Masaki Aoki ,  Shigeru Yoshida ,  Hiroshi Yamazoe ,  Masahiro Nagasawa

IPC分类号： C01B35/02 ,  C23C16/01 ,  C23C16/28 ,  C23F1/10 ,  H04R1/18 ,  F16L9/14 ,  G11B3/02

CPC分类号： C01B35/02 ,  C23C16/01 ,  C23C16/28 ,  C23F1/10 ,  H04R1/18 ,  Y10T428/12292

摘要： This invention relates to a boron cantilever in pipe form, composed of an inner layer of crystal boron and an outer layer of amorphous boron and to a method for producing it. The cantilever is particularly useful for supporting a phonographic pickup stylus.

摘要翻译： 本发明涉及由硼晶体内层和无定形硼外层构成的管状硼悬臂及其制造方法。 悬臂特别适用于支持录音笔。

公开(公告)号：US4333861A

公开(公告)日：1982-06-08

申请号：US27392

申请日：1979-04-05

申请人： Masaki Aoki ,  Mitsuhiro Ohtani

发明人： Masaki Aoki ,  Mitsuhiro Ohtani

IPC分类号： H01C7/10 ,  C03C3/14 ,  C03C8/14 ,  H01C7/108 ,  H01B1/06

CPC分类号： H01C7/108

摘要： A thick film varistor comprising a thick film consisting essentially of 20 to 85 weight percent of tin oxide having an additive such as antimony oxide, and 15 to 80 weight percent of a glass frit such as a zinc barium borate glass. This thick film varistor is advantageous for its high n value (i.e. high voltage dependence of resistivity) and its low varistor voltage (i.e. voltage above which its resistivity abruptly decreases).

摘要翻译： 一种厚膜压敏电阻，其包括基本上由20至85重量％的氧化锡和氧化锑等添加剂组成的厚膜和15至80重量％的玻璃料如硼酸锌钡玻璃组成的厚膜。 该厚膜压敏电阻对于其高n值（即电阻率的高电压依赖性）及其低压阻电压（即高于其电阻率突然降低的电压）是有利的。

公开(公告)号：US08587987B2

公开(公告)日：2013-11-19

申请号：US13240492

申请日：2011-09-22

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C13/003 ,  G11C11/16 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C29/021 ,  G11C29/028 ,  G11C2213/79

摘要： A semiconductor memory includes a real memory cell including a selection transistor and a resistance variable element which are connected in series between a first voltage line and a second voltage line through a connection node, a real amplification transistor having a gate connected to the connection node, a source connected to a reference voltage line, and a drain connected to a real read line, and a sense amplifier to determine a logic held in the real memory cell by receiving a voltage of the real read line varied with a voltage generated in the connection node by resistance dividing between a source/drain resistance of the selection transistor, and the resistance variable element, the selection transistor receiving a read control voltage at the gate thereof.

摘要翻译： 半导体存储器包括：实际存储单元，包括通过连接节点串联连接在第一电压线和第二电压线之间的选择晶体管和电阻可变元件，具有连接到连接节点的栅极的实际放大晶体管， 连接到参考电压线的源极和连接到实际读取线的漏极，以及读出放大器，用于通过接收由连接中产生的电压而变化的真实读取线的电压来确定保持在实际存储单元中的逻辑 所述选择晶体管在所述栅极处接收读取控制电压，所述选择晶体管在所述栅极处接收读取控制电压。

公开(公告)号：US07898839B2

公开(公告)日：2011-03-01

申请号：US12398342

申请日：2009-03-05

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/115 ,  H01L27/24

摘要： In the semiconductor memory device having a resistance memory element, a first transistor having a drain terminal connected to one end of the resistance memory element and a source terminal connected to a ground voltage, and a second transistor having source terminal connected to the resistance memory element, when a write voltage is applied to the resistance memory element via the second transistor to switch the resistance memory element from a low resistance state to a high resistance state, a voltage is controlled to be a value which is not less than a reset voltage and less than a set voltage by applying to a gate terminal of the second transistor a voltage which is not less than a total of the reset voltage and a threshold voltage of the second transistor and is less than a total of the set voltage and the threshold voltage.

摘要翻译： 在具有电阻存储元件的半导体存储器件中，具有连接到电阻存储元件的一端的漏极端子和与地电压相连的源极端子的第一晶体管，以及具有与电阻存储元件连接的源极端子的第二晶体管 当通过第二晶体管将电压存储元件施加写入电压以将电阻存储元件从低电阻状态切换到高电阻状态时，电压被控制为不小于复位电压的值， 通过向第二晶体管的栅极端子施加不小于复位电压和第二晶体管的阈值电压的总和并且小于设定电压和阈值电压的总和的电压小于设定电压 。

公开(公告)号：USRE41465E1

公开(公告)日：2010-08-03

申请号：US11580316

申请日：2000-10-10

申请人： Katsuyoshi Yamashita ,  Yoshiki Sasaki ,  Junichi Hibino ,  Masafumi Ookawa ,  Masaki Aoki

发明人： Katsuyoshi Yamashita ,  Yoshiki Sasaki ,  Junichi Hibino ,  Masafumi Ookawa ,  Masaki Aoki

IPC分类号： H01J17/49 ,  G09G3/10

CPC分类号： H01J9/261 ,  H01J11/12 ,  H01J11/22 ,  H01J11/48

摘要： A plasma display device has a first plate and a second plate which face each other with a discharge space therebetween, and a sealing member which is provided between the first and second plates to seal the discharge space at edges of the first and second plates. A plurality of electrodes are formed on the inner major surface of the first or second plate. An electrode diffusion preventive layer is formed in each area where the plurality of electrodes cross over the sealing member, so as to avoid direct contact between the plurality of electrodes and the sealing member. As a result, problems such as breaking of the electrodes can be avoided. This construction is especially effective when the electrodes contain Ag.

摘要翻译： 等离子体显示装置具有彼此面对的第一板和第二板，并且设置在第一板和第二板之间以密封第一板和第二板的边缘处的放电空间的密封构件。 多个电极形成在第一或第二板的内主表面上。 在多个电极与密封构件交叉的各个区域中形成电极扩散防止层，以避免多个电极和密封构件之间的直接接触。 结果，可以避免电极断裂等问题。 当电极含有Ag时，这种结构特别有效。

公开(公告)号：US07583528B2

公开(公告)日：2009-09-01

申请号：US11848571

申请日：2007-08-31

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/15 ,  G11C2213/75

摘要： A magnetic memory device includes a first signal line (BL) and a second signal line (/BL) extended column-wise; a third signal line (WL) extended row-wise; a memory cell including a first parallelly connected set which is disposed at the intersection of the first signal line and the third signal line, including a first magnetoresistive effect element (MTJ1) and a first select transistor (Tr1) and having one end connected to the first signal line; a second parallelly connected set which is disposed at the intersection of the second signal line and the third signal line, including a second magnetoresistive effect element (MTJ2) and a second select transistor (Tr2) and having one end connected to the second signal line; and a read circuit connected to the first signal line and the second signal line, for reading information memorized in the memory cell, based on voltages of the first signal line and the second signal line.

摘要翻译： 磁存储器件包括第一信号线（BL）和逐列延伸的第二信号线（/ BL）; 逐行扩展的第三信号线（WL）; 存储单元，包括设置在第一信号线和第三信号线的交点处的第一并联装置，包括第一磁阻效应元件（MTJ1）和第一选择晶体管（Tr1），并且一端连接到第一信号线 第一条信号线 第二并联连接组，其设置在第二信号线和第三信号线的交点处，包括第二磁阻效应元件（MTJ2）和第二选择晶体管（Tr2），并且一端连接到第二信号线; 以及连接到第一信号线和第二信号线的读取电路，用于基于第一信号线和第二信号线的电压来读取存储在存储单元中的信息。

公开(公告)号：USRE40871E1

公开(公告)日：2009-08-18

申请号：US09997536

申请日：2001-11-29

申请人： Masaki Aoki ,  Hideo Torii ,  Eiji Fujii ,  Mitsuhiro Ohtani ,  Takashi Inami ,  Hiroyuki Kawamura ,  Hiroyoshi Tanaka ,  Ryuichi Murai ,  Yasuhisa Ishikura ,  Yutaka Nishimura ,  Katsuyoshi Yamashita

发明人： Masaki Aoki ,  Hideo Torii ,  Eiji Fujii ,  Mitsuhiro Ohtani ,  Takashi Inami ,  Hiroyuki Kawamura ,  Hiroyoshi Tanaka ,  Ryuichi Murai ,  Yasuhisa Ishikura ,  Yutaka Nishimura ,  Katsuyoshi Yamashita

IPC分类号： C30B29/16

CPC分类号： C23C16/404 ,  C23C16/403 ,  H01J9/02 ,  H01J11/12 ,  H01J11/38 ,  H01J11/40 ,  H01J11/50 ,  H01J2211/38 ,  H01J2211/40 ,  H01J2211/50 ,  Y10T117/1004 ,  Y10T117/1008

摘要： The first object of the present invention is to provide a PDP with improved panel brightness which is achieved by improving the efficiency in conversion from discharge energy to visible rays. The second object of the present invention is to provide a PDP with improved panel life which is achieved by improving the protecting layer protecting the dielectrics glass layer. To achieve the first object, the present invention sets the amount of xenon in the discharge gas to the range of 10% by volume to less than 100% by volume, and sets the charging pressure for the discharge gas to the range of 500 to 760 Torr which is higher than conventional charging pressures. With such construction, the panel brightness increases. Also, to achieve the second object, the present invention has, on the surface of the dielectric glass layer, a protecting layer consisting of an alkaline earth oxide with (100)-face or (110)-face orientation. The protecting layer, which may be formed by using thermal Chemical Vapor Deposition (CVD) method, plasma enhanced CVD method, or a vapor deposition method with irradiation of ion or electron beam, will have a high sputtering resistance and effectively protect the dielectrics glass layer. Such a protecting layer contributes to the improvement of the panel life.

摘要翻译： 本发明的第一个目的是提供一种具有改进的面板亮度的PDP，其通过提高从放电能量到可见光的转换的效率来实现。 本发明的第二个目的是提供一种具有改善面板寿命的PDP，其通过改进保护电介质玻璃层的保护层来实现。 为了实现第一个目的，本发明将放电气体中的氙的量设定为10体积％至小于100体积％的范围，并将放电气体的充电压力设定在500至760的范围内 高于常规充气压力的Torr。 通过这样的结构，面板亮度增加。 此外，为了实现第二个目的，本发明在电介质玻璃层的表面上具有由具有（100）面或（110）面取向的碱土金属氧化物构成的保护层。 可以通过使用热化学气相沉积（CVD）法，等离子体增强CVD法或通过离子或电子束照射的气相沉积法形成的保护层将具有高溅射电阻并且有效地保护电介质玻璃层 。 这样的保护层有助于提高面板寿命。

公开(公告)号：US07453206B2

公开(公告)日：2008-11-18

申请号：US10479158

申请日：2002-05-27

申请人： Morio Fujitani ,  Hiroyuki Yonehara ,  Masaki Aoki ,  Keisuke Sumida ,  Hideki Asida ,  Junichi Hibino

发明人： Morio Fujitani ,  Hiroyuki Yonehara ,  Masaki Aoki ,  Keisuke Sumida ,  Hideki Asida ,  Junichi Hibino

IPC分类号： H01J17/49

CPC分类号： H01J11/12 ,  H01J9/02 ,  H01J11/38

摘要： A PDP has first and second substrates which face each other with a space in between. A display electrode pair and a dielectric layer are formed on the first substrate, and a plurality of discharge cells are formed between the first and second substrates along the display electrode pair. In this construction, two or more depressions are provided in the dielectric layer in an area corresponding to each discharge cell. This improves luminous intensity and illumination efficiency. Also, to form the dielectric layer on the first substrate, first a transfer film is made by providing a dielectric precursor layer on a support film, then depressions are formed in the dielectric precursor layer of the transfer film, and lastly the dielectric precursor layer of the transfer film is transferred onto the first substrate. This decreases the number of manufacturing steps and increases the yield, thereby reducing manufacturing costs.

摘要翻译： PDP具有彼此面对的第一和第二基板，其间具有空间。 在第一基板上形成显示电极对和电介质层，沿着显示电极对在第一和第二基板之间形成多个放电单元。 在这种结构中，在对应于每个放电单元的区域中的电介质层中设置两个或更多个凹陷。 这提高了发光强度和照明效率。 此外，为了在第一基板上形成电介质层，首先通过在支撑膜上设置电介质前体层来形成转印膜，然后在转印膜的电介质前体层中形成凹陷，最后形成介电前体层 将转印膜转印到第一基板上。 这减少了制造步骤的数量并提高了产量，从而降低了制造成本。