Magnetic recording medium and its manufacturing process
    1.
    发明授权
    Magnetic recording medium and its manufacturing process 失效
    磁记录介质及其制造工艺

    公开(公告)号:US5378548A

    公开(公告)日:1995-01-03

    申请号:US713285

    申请日:1991-06-11

    摘要: A magnetic recording medium, comprising; a 2-layer film formed on a glass disk substrate as an under layer composed of an amorphous oxide or NaCl oxides like a NiO or CoO and the like, or any soft magnetic oxide of Mn-Zn ferrite, Ni-Zn ferrite and the like, or a combination of those 2 materials; a magnetic recording medium formed thereon composed of a Co ferrite perpendicular magnetic film of a columnar structure; and a structure formed thereon with a lubricant layer medium. This magnetic recording medium is used for a magnetic rigid disk apparatus. The substrate is made by press-molding the glass plate at a high temperature. The under layer film and Co ferrite film are composed of vapors of organic material compounds and oxygen as their raw materials, and made by a plasma assisted CVD method.

    摘要翻译: 一种磁记录介质,包括: 形成在作为由NiO或CoO等的无定形氧化物或NaCl氧化物构成的下层的玻璃盘基板上的2层膜,或Mn-Zn铁氧体,Ni-Zn铁氧体等的任何软磁性氧化物 ,或这两种材料的组合; 形成在其上的磁记录介质,由柱状结构的Co铁氧体垂直磁性膜构成; 以及在其上形成有润滑剂层介质的结构。 该磁记录介质用于磁性刚性盘装置。 基板通过在高温下对玻璃板进行压制成型而制成。 底层膜和Co铁氧体膜由有机材料化合物的蒸气和氧气作为原料组成,并通过等离子体辅助CVD法制成。

    Surface wave filter element
    3.
    发明授权
    Surface wave filter element 失效
    表面波滤芯

    公开(公告)号:US5521454A

    公开(公告)日:1996-05-28

    申请号:US302011

    申请日:1994-09-09

    IPC分类号: H03H3/08 H03H9/02 H03H9/00

    CPC分类号: H03H3/08 H03H9/02574

    摘要: A surface wave filter element includes a portion on which elastic surface waves propagate. This portion includes a piezoelectric material, an amorphous boron layer or plate and IDT electrodes for inputting and outputting signals. The piezoelectric material is a film made of ZnO, LiNbO.sub.3 or LiTaO.sub.3 formed by sputtering, ion beam deposition or chemical vapor deposition. The amorphous boron layer or boron plate may be formed on a substrate made of an inorganic material. The boron material is formed using electron beam deposition, ion beam deposition or chemical vapor deposition.

    摘要翻译: 表面波滤波器元件包括弹性表面波在其上传播的部分。 该部分包括用于输入和输出信号的压电材料,非晶硼层或板和IDT电极。 压电材料是通过溅射,离子束沉积或化学气相沉积形成的由ZnO,LiNbO 3或LiTaO 3制成的膜。 无定形硼层或硼板可以形成在由无机材料制成的基板上。 硼材料使用电子束沉积,离子束沉积或化学气相沉积形成。

    Method for producing a laminated thin film capacitor
    4.
    发明授权
    Method for producing a laminated thin film capacitor 失效
    叠层薄膜电容器的制造方法

    公开(公告)号:US5663089A

    公开(公告)日:1997-09-02

    申请号:US465350

    申请日:1995-06-05

    IPC分类号: H01G4/30 H01L21/70

    CPC分类号: H01G4/306

    摘要: A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

    摘要翻译: 一种叠层薄膜电容器,其具有基板,至少两个电极层,至少一个电介质层和一对外部电极,所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上,其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上,该电容器具有优异的介电特性,例如每单位体积的高容量。

    Thin film capacitor and method of manufacturing the same
    5.
    发明授权
    Thin film capacitor and method of manufacturing the same 失效
    薄膜电容器及其制造方法

    公开(公告)号:US5406445A

    公开(公告)日:1995-04-11

    申请号:US216966

    申请日:1994-03-24

    IPC分类号: H01G4/20 H01L29/04 H01L23/48

    摘要: A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

    摘要翻译: 将取向为(100)面的NaCl氧化物薄层或取向为(100)面的尖晶石氧化物薄层,朝向(100)面的钙钛矿电介质薄层和金属电极依次层压在金属电极上,从而提供 薄膜电容器。 或者,通过依次层叠取向于(100)面的氧化锌薄膜或取向为(100)面的尖晶石氧化物薄层,将铂薄层作为朝向(100)面的下部电极而制造薄膜电容器 取向为(100)面的钙钛矿电介质薄层和在基板上作为上部电极的金属薄层。 当采用真空沉积法,溅射法,CVD法或等离子体增强CVD法应用等离子体增强CVD法形成NaCl氧化物薄层,尖晶石氧化物薄层和钙钛矿电介质薄层 形成金属电极。

    Laminated thin film capacitor and method for producing the same
    6.
    发明授权
    Laminated thin film capacitor and method for producing the same 失效
    层叠薄膜电容器及其制造方法

    公开(公告)号:US5459635A

    公开(公告)日:1995-10-17

    申请号:US215816

    申请日:1994-03-22

    IPC分类号: H01G4/30 H01G4/10

    CPC分类号: H01G4/306

    摘要: A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.

    摘要翻译: 一种叠层薄膜电容器,其具有基板,至少两个电极层,至少一个电介质层和一对外部电极,所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上,其中所述金属电极层和所述电介质层交替层叠在 基板和每个其他金属电极层暴露在电容器的每个侧壁上,该电容器具有优异的介电特性,例如每单位体积的高容量。

    Method of producing plasma display panel with protective layer of an alkaline earth oxide
    7.
    再颁专利
    Method of producing plasma display panel with protective layer of an alkaline earth oxide 有权
    制造具有碱土金属氧化物保护层的等离子体显示面板的方法

    公开(公告)号:USRE40871E1

    公开(公告)日:2009-08-18

    申请号:US09997536

    申请日:2001-11-29

    IPC分类号: C30B29/16

    摘要: The first object of the present invention is to provide a PDP with improved panel brightness which is achieved by improving the efficiency in conversion from discharge energy to visible rays. The second object of the present invention is to provide a PDP with improved panel life which is achieved by improving the protecting layer protecting the dielectrics glass layer. To achieve the first object, the present invention sets the amount of xenon in the discharge gas to the range of 10% by volume to less than 100% by volume, and sets the charging pressure for the discharge gas to the range of 500 to 760 Torr which is higher than conventional charging pressures. With such construction, the panel brightness increases. Also, to achieve the second object, the present invention has, on the surface of the dielectric glass layer, a protecting layer consisting of an alkaline earth oxide with (100)-face or (110)-face orientation. The protecting layer, which may be formed by using thermal Chemical Vapor Deposition (CVD) method, plasma enhanced CVD method, or a vapor deposition method with irradiation of ion or electron beam, will have a high sputtering resistance and effectively protect the dielectrics glass layer. Such a protecting layer contributes to the improvement of the panel life.

    摘要翻译: 本发明的第一个目的是提供一种具有改进的面板亮度的PDP,其通过提高从放电能量到可见光的转换的效率来实现。 本发明的第二个目的是提供一种具有改善面板寿命的PDP,其通过改进保护电介质玻璃层的保护层来实现。 为了实现第一个目的,本发明将放电气体中的氙的量设定为10体积%至小于100体积%的范围,并将放电气体的充电压力设定在500至760的范围内 高于常规充气压力的Torr。 通过这样的结构,面板亮度增加。 此外,为了实现第二个目的,本发明在电介质玻璃层的表面上具有由具有(100)面或(110)面取向的碱土金属氧化物构成的保护层。 可以通过使用热化学气相沉积(CVD)法,等离子体增强CVD法或通过离子或电子束照射的气相沉积法形成的保护层将具有高溅射电阻并且有效地保护电介质玻璃层 。 这样的保护层有助于提高面板寿命。

    Plasma assited MO-CVD of perooskite dalectric films
    8.
    发明授权
    Plasma assited MO-CVD of perooskite dalectric films 失效
    等离子体组合了钙钛矿介电薄膜的MO-CVD

    公开(公告)号:US5006363A

    公开(公告)日:1991-04-09

    申请号:US446767

    申请日:1989-12-06

    IPC分类号: C23C16/40

    CPC分类号: C23C16/409

    摘要: Disclosed is a method of forming a Perovskite-type dielectric film on a substrate under low temperature by decomposing and reacting vapor of organometallic compound containing metal for the dielectric, vapor of organometallic compound containing titanium, and oxygen in a reduced-pressure and plasma.

    摘要翻译: 公开了一种在低温下在基板上形成钙钛矿型电介质膜的方法,该方法是在电解液中含有金属化合物的金属化合物,含钛的有机金属化合物的蒸气和减压和等离子体中的氧的蒸气蒸发。