Semiconductor device inspection method
    82.
    发明授权
    Semiconductor device inspection method 有权
    半导体器件检查方法

    公开(公告)号:US07332359B2

    公开(公告)日:2008-02-19

    申请号:US10082593

    申请日:2002-02-22

    IPC分类号: H01L31/26

    摘要: Techniques for inspecting semiconductor devices. An inspection condition using chip matrix data and chip size data is set. The intricate circuit patterns of at least one semiconductor device is inspected with the inspection condition. In an embodiment of the present invention, inspection uses images formed by the irradiation of white light, a laser light, or an electron beam. Data obtained from the inspection is used to generate a revised inspection condition. Semiconductor devices are inspected using the revised inspection condition.

    摘要翻译: 检查半导体器件的技术。 设置使用芯片矩阵数据和芯片尺寸数据的检查条件。 在检查条件下检查至少一个半导体器件的复杂电路图案。 在本发明的实施例中,检查使用通过照射白光,激光或电子束形成的图像。 使用从检查获得的数据来生成修订的检查条件。 使用修订的检查条件检查半导体器件。

    Inspection method and inspection system using charged particle beam
    87.
    发明授权
    Inspection method and inspection system using charged particle beam 失效
    使用带电粒子束的检查方法和检查系统

    公开(公告)号:US07211797B2

    公开(公告)日:2007-05-01

    申请号:US11098699

    申请日:2005-04-05

    IPC分类号: G21K7/00

    摘要: The present invention provides an inspection technique using a charged particle beam by which a method of setting a condition for optimally charging an object to be inspected without relying on an operator's experience is established and a voltage contrast image with higher efficiency of defect detection than ever before can be obtained. The inspection method comprises the steps of scanning an area on a surface of a substrate having a specific pattern formed thereon with a primary charged particle beam, detecting signals of secondary electrons emitted from the area, forming an image of the area from detected signals, and generating a histogram from the image. All these steps are performed each time a condition of irradiation with the charged particle beam is changed. When two or more separate peaks appear in the histogram, the histogram is determined as an optimal condition for inspection, and inspection is performed based on the image obtained under that condition.

    摘要翻译: 本发明提供了使用带电粒子束的检查技术,通过该技术,建立了不依赖于操作者的经验来设定用于最佳地对被检查物体进行充电的条件的方法以及比以往更高的缺陷检测效率的电压对比图像 可以获得。 检查方法包括以下步骤:利用初级带电粒子束扫描其上形成有特定图案的基板的表面上的区域,检测从该区域发射的二次电子的信号,从检测到的信号形成该区域的图像,以及 从图像生成直方图。 每当改变带电粒子束照射的条件时,都执行所有这些步骤。 当直方图中出现两个或多个单独的峰时,直方图被确定为检查的最佳条件,并且基于在该条件下获得的图像进行检查。

    Method of inspecting pattern and inspecting instrument
    90.
    发明授权
    Method of inspecting pattern and inspecting instrument 失效
    检查模式和检验仪器的方法

    公开(公告)号:US06924482B2

    公开(公告)日:2005-08-02

    申请号:US10395197

    申请日:2003-03-25

    摘要: Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.

    摘要翻译: 电子束在连接点成为向后偏置的状态下以预定间隔在步骤中照射到晶片,并且监视在向后偏置中减轻电荷的时间段的特性差。 结果,在比正常部分短的时间段内产生结漏电的位置处的电荷被减轻,因此在正常部分和失效部分之间产生电位差,并且在潜在对比图像中观察到电荷 作为亮度的差异。 通过连续重复获取图像的操作,实时执行图像处理并存储失败部分的位置和亮度,可以执行指定区域的自动检查。 故障部分的图像,亮度和分布信息在检查后自动保存并输出。