摘要:
An apparatus for inspecting particles and/or pattern defects of an object under inspection. Data processing means obtains information on size of the particles and/or the pattern defects from an intensity of the scattered light detected by the light detecting means by referring to a relationship between an intensity of scattered light from a standard particle and a size of the standard particle, and using a calibration coefficient for compensating for a change in intensity of the light of the illuminating means from a predetermined intensity.
摘要:
Techniques for inspecting semiconductor devices. An inspection condition using chip matrix data and chip size data is set. The intricate circuit patterns of at least one semiconductor device is inspected with the inspection condition. In an embodiment of the present invention, inspection uses images formed by the irradiation of white light, a laser light, or an electron beam. Data obtained from the inspection is used to generate a revised inspection condition. Semiconductor devices are inspected using the revised inspection condition.
摘要:
An apparatus for inspecting particles and/or pattern defects of an object under inspection. Data processing means obtains information on size of the particles and/or the pattern defects from an intensity of the scattered light detected by the light detecting means by referring to a relationship between an intensity of scattered light from a standard particle and a size of the standard particle, and using a calibration coefficient for compensating for a change in intensity of the light of the illuminating means from a predetermined intensity.
摘要:
A system for monitoring foreign matter includes a manufacturing line having plural process processing apparatuses, a production management system which manages the processing of workpieces in the manufacturing line, plural optical heads which monitor foreign matter in relation to at least one of the workpieces, and which provide an output signal indicative thereof, and at least one image signal processing unit provided in a lesser number than a number of the plural optical heads for processing the output signal therefrom.
摘要:
A defect inspection apparatus includes an illumination optical unit for obliquely illuminating an object with a slit-like shaped laser, a first detection optical unit for detecting a first image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a first direction substantially normal to a surface of the object, a second detection optical unit for detecting a second image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a second direction inclined to the normal direction to the surface of the object, an image signal processing unit which processes a signal outputted from the first detection optical unit and a signal outputted from the second detection optical unit, and an output unit which outputs information processed by the image signal processing unit.
摘要:
A method for detecting defects on a specimen includes mounting a specimen on a table with which is movable, obliquely projecting a laser as a line onto a surface of the specimen, detecting with an image sensor an image of light formed by light reflected from the specimen and passed through a filter which blocks scattered light resulting from repetitive patterns formed on the specimen, processing a signal outputted from the image sensor to extract defects of the specimen, and a displaying information of defects extracted by the signal processor.
摘要:
The present invention provides an inspection technique using a charged particle beam by which a method of setting a condition for optimally charging an object to be inspected without relying on an operator's experience is established and a voltage contrast image with higher efficiency of defect detection than ever before can be obtained. The inspection method comprises the steps of scanning an area on a surface of a substrate having a specific pattern formed thereon with a primary charged particle beam, detecting signals of secondary electrons emitted from the area, forming an image of the area from detected signals, and generating a histogram from the image. All these steps are performed each time a condition of irradiation with the charged particle beam is changed. When two or more separate peaks appear in the histogram, the histogram is determined as an optimal condition for inspection, and inspection is performed based on the image obtained under that condition.
摘要:
Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要:
A defect inspection method includes radiating an illumination slit-shaped beam having lights substantially parallel to a longitudinal direction to a substrate having circuit patterns in a direction inclined at a predetermined gradient relative to the direction of a line normal to the substrate and inclined at a predetermined gradient on a surface with respect to a group of main straight lines of the circuit patterns with its longitudinal direction oriented almost perpendicularly to a direction of a movement of the substrate. Scattered light reflected by a defect such as a foreign particle existing on the illuminated substrate is received and converted into a detection signal by using an image sensor, and defect judging is effected of an extracted a signal indicating a defect such as a foreign particle on the basis of the detection signal output.
摘要:
Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.