Lateral shift measurement using an optical technique
    81.
    发明授权
    Lateral shift measurement using an optical technique 有权
    使用光学技术的侧向位移测量

    公开(公告)号:US07122817B2

    公开(公告)日:2006-10-17

    申请号:US11271773

    申请日:2005-11-14

    Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements comprise at least two measurements with different polarization states of incident light, each measurement including illuminating eh measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between eth diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

    Abstract translation: 通过对样品中的测量部位进行光学测量来控制多层样品的制造期间层的对准。 测量部位包括两个分别位于两个不同层之间的衍射结构。 光学测量包括具有入射光的不同偏振态的至少两个测量,每个测量包括照射eh测量位置,以便通过另一个照射衍射结构之一。 测量位置的衍射特性表示了eth衍射结构之间的横向偏移。 对入射光的不同极化状态分析检测的衍射特性,以确定层之间现有的横向偏移。

    Vacuum UV based optical measuring method and system
    83.
    发明申请
    Vacuum UV based optical measuring method and system 有权
    真空紫外线光学测量方法和系统

    公开(公告)号:US20050077474A1

    公开(公告)日:2005-04-14

    申请号:US10958665

    申请日:2004-10-06

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: G01N21/211 G01N21/01 G01N2201/023

    Abstract: A method and system are presented for use in optical processing of an article by VUV radiation. The method comprises: localizing incident VUV radiation propagation from an optical head assembly towards a processing site on the article outside the optical head assembly and localizing reflected VUV radiation propagation from said processing site towards the optical head assembly by localizing a medium, non-absorbing with respect to VUV radiation, in within the light propagation path in the vicinity of said site outside the optical head assembly.

    Abstract translation: 提出了一种用于通过VUV辐射对物品进行光学处理的方法和系统。 该方法包括:将来自光学头组件的入射VUV辐射传播定位到光学头组件外部的制品上的处理位置,并将来自所述处理部位的反射的VUV辐射传播定位到光学头组件,定位介质,不吸收 相对于在光学头组件外部的所述位置附近的光传播路径内的VUV辐射。

    Method and system for overlay measurement
    84.
    发明授权
    Method and system for overlay measurement 有权
    覆盖测量方法和系统

    公开(公告)号:US06801315B2

    公开(公告)日:2004-10-05

    申请号:US10303052

    申请日:2002-11-25

    CPC classification number: G03F7/70633

    Abstract: An optical measurement method and system are presented for imaging two target structures in two parallel layers, respectively, of a sample, to enable determination of a registration between the two target structures along two mutually perpendicular axes of the layer. The sample is illuminated with incident radiation to produce a radiation response of the sample. The radiation response is collected by an objective lens arrangement, and the collected radiation response is split into two spatially separated radiation components. The split radiation components are directed towards at least one imaging plane along different optical channels characterized by optical paths of different lengths, respectively. The two split radiation components are detected in said at least one imaging plane, and two image parts are thereby acquired, each image part containing images of the two target structures. This enables determination of the relative distance between the two target structures.

    Abstract translation: 提出了一种光学测量方法和系统,用于分别对样本的两个平行层中的两个目标结构进行成像,以便能够沿着该层的两个相互垂直的轴确定两个目标结构之间的配准。 用入射辐射照射样品以产生样品的辐射响应。 辐射响应由物镜布置收集,并且收集的辐射响应被分成两个空间上分离的辐射分量。 分裂的辐射分量被引导到沿着不同长度的光路的不同光通道的至少一个成像平面。 在所述至少一个成像平面中检测到两个分离的辐射分量,从而获得两个图像部分,每个图像部分包含两个目标结构的图像。 这使得能够确定两个目标结构之间的相对距离。

    Method and apparatus for monitoring a chemical mechanical planarization process applied to metal-based patterned objects
    85.
    发明授权
    Method and apparatus for monitoring a chemical mechanical planarization process applied to metal-based patterned objects 有权
    用于监测应用于基于金属的图案化物体的化学机械平面化处理的方法和装置

    公开(公告)号:US06292265B1

    公开(公告)日:2001-09-18

    申请号:US09326665

    申请日:1999-06-07

    Abstract: A method is presented for optical control of the quality of a process of chemical mechanical planarization (CMP) performed by a polishing tool applied to an article having a patterned area. The article contains a plurality of stacks each formed by a plurality of different layers, thereby defining a pattern in the form of spaced-apart metal regions. The method is capable of locating at least one of residues, erosion and dishing conditions on the article. At least one predetermined site on the article is selected for control. This at least one predetermined site is illuminated, and spectral characteristics of light components reflected from this location are detected. Data representative of the detected light components is analyzed for determining at least one parameter of the article within the at least one illuminated site.

    Abstract translation: 提出了一种用于光学控制由应用于具有图案化区域的制品的抛光工具执行的化学机械平面化(CMP)工艺的质量的方法。 该物品包含多个由多个不同层形成的堆叠,从而限定了间隔金属区域形式的图案。 该方法能够定位物品上的残留物,侵蚀和凹陷条件中的至少一种。 选择物品上至少一个预定的位置进行控制。 该至少一个预定位置被照亮,并且检测从该位置反射的光分量的光谱特性。 分析表示检测到的光成分的数据,以确定至少一个照明部位内的物品的至少一个参数。

    Method and apparatus for measurements of patterned structures
    86.
    发明授权
    Method and apparatus for measurements of patterned structures 有权
    用于测量图案结构的方法和装置

    公开(公告)号:US06281974B1

    公开(公告)日:2001-08-28

    申请号:US09590635

    申请日:2000-06-08

    CPC classification number: G01B11/0625 G01B11/02 G01J3/42 H01L22/12

    Abstract: A method for measuring at least one desired parameter of a patterned structure having a plurality of features defined by a certain process of its manufacturing. The structure represents a grid having at least one cycle formed of at least two locally adjacent elements having different optical properties in respect of an incident radiation. An optical model, based on at lease some of the features of the structure is provided. The model is capable of determining theoretical data representative of photometric intensities of light components of different wavelengths specularly reflected from the structure and of calculating said at least one desired parameter of the structure. A measurement area, which is substantially larger than a surface area of the structure defined by the grid cycle, is illuminated by an incident radiation of a preset substantially wide wavelength range. Light component substantially specularly reflected from the measurement area is detected and measured data representative of photometric intensities of each wavelength within the wavelength range is obtained. The measured and theoretical data satisfies a predetermined condition. Upon detecting that the predetermined condition is satisfied, said at least one parameter of the structure is calculated.

    Abstract translation: 一种用于测量具有由其制造的特定过程限定的多个特征的图案化结构的至少一个期望参数的方法。 该结构表示具有至少一个周期的网格,该至少一个周期由相对于入射辐射具有不同光学特性的至少两个局部相邻元件形成。 提供了基于结构的一些特征的光学模型。 该模型能够确定表示从结构镜面反射的不同波长的光分量的光度强度并且计算所述结构的至少一个期望参数的理论数据。 基本上大于由栅格周期限定的结构的表面积的测量区域被预设的基本上宽的波长范围的入射辐射照射。 检测从测量区域基本上镜面反射的光分量,并且获得表示波长范围内的每个波长的光度强度的测量数据。 测量和理论数据满足预定条件。 在检测到满足预定条件时,计算结构的所述至少一个参数。

    Autofocussing microscope having a pattern imaging system
    87.
    发明授权
    Autofocussing microscope having a pattern imaging system 失效
    自动聚焦显微镜具有图案成像系统

    公开(公告)号:US5604344A

    公开(公告)日:1997-02-18

    申请号:US539030

    申请日:1995-10-04

    Applicant: Moshe Finarov

    Inventor: Moshe Finarov

    CPC classification number: G02B21/245 G02B21/244

    Abstract: An autofocussing mechanism is provided which is useful for all objective lenses and during scanning of the object. The autofocussing mechanism operates with a microscope having a main optical path, an objective lens, an object surface, an image plane and apparatus for changing the distance between the objective lens and the object surface thereby to focus the image of the object. The autofocussing mechanism preferably includes a pattern imaging system, a single image detector and a pattern focus analyzer. The pattern imaging system images at least one pattern through the objective lens along the main optical path and onto the object surface. The image of the pattern is then combined with an image of the object and is reflected along the main optical path towards the image plane. The image detector detects the reflected image and the pattern focus analyzer determines the extent of sharpness of the pattern by analyzing the output of the image detector. The pattern focus analyzer can also indicate, to the apparatus for changing the distance, to move in a direction of increased focus.

    Abstract translation: 提供了一种自动聚焦机制,对所有物镜和扫描对象都是有用的。 自动聚焦机构用具有主光路,物镜,物体表面,像平面和用于改变物镜与物体表面之间的距离的装置的显微镜操作,从而聚焦物体的图像。 自动聚焦机构优选地包括图案成像系统,单个图像检测器和图案聚焦分析器。 图案成像系统沿着主光路通过物镜将至少一个图案成像到物体表面上。 然后将图案的图像与对象的图像组合,并且沿着主光学路径朝向图像平面反射。 图像检测器检测反射图像,并且图案聚焦分析器通过分析图像检测器的输出来确定图案的清晰度的程度。 图案对焦分析器还可以向用于改变距离的装置指示在增加焦点的方向上移动。

    Thin films measurement method and system
    88.
    发明授权
    Thin films measurement method and system 有权
    薄膜测量方法和系统

    公开(公告)号:US08564793B2

    公开(公告)日:2013-10-22

    申请号:US13270647

    申请日:2011-10-11

    CPC classification number: G01B11/0625 G01B11/0683 H01L22/12

    Abstract: A method and system are provided for controlling processing of a structure. First measured data is provided being indicative of at least one of: a thickness (d2) of at least one layer (L2) of the structure W in at least selected sites of the structure prior to processing of the structure, and a surface profile of the structure prior to processing. An optical measurement is applied to at least the selected sites of the structure after processing and second measured data is generated being indicative of at least one of: a thickness of the processed structure (d′) and a surface profile of the processed structure. The second measured data is analyzed by interpreting it using the first measured data to determine a thickness (d′1 or d′2) of at least one layer of the processed structure. This determined thickness is indicative of the quality of processing.

    Abstract translation: 提供了一种用于控制结构的处理的方法和系统。 提供了首先测量的数据,其指示以下至少一个:在结构处理之前的结构的至少一些选定的位置中的结构W的至少一层(L2)的厚度(d2)和表面轮廓 处理前的结构。 在处理之后至少对结构的选定部位进行光学测量,并且生成第二测量数据,指示处理结构(d')的厚度和处理结构的表面轮廓中的至少一个。 通过使用第一测量数据解释第二测量数据来分析第二测量数据,以确定至少一层处理结构的厚度(d'1或d'2)。 该确定的厚度表示处理的质量。

    SOLAR CELLS AND METHOD OF MANUFACTURING THEREOF
    90.
    发明申请
    SOLAR CELLS AND METHOD OF MANUFACTURING THEREOF 有权
    太阳能电池及其制造方法

    公开(公告)号:US20110197965A1

    公开(公告)日:2011-08-18

    申请号:US13123532

    申请日:2009-10-12

    CPC classification number: H01L31/022425 C23C14/28 H01L31/0682 Y02E10/547

    Abstract: A photovoltaic cell, the cell comprising: a silicon substrate of bulk silicon material having front and rear surfaces; an emitter layer on the rear surface of said substrate; elongate channels through the emitter layer; elongate contacts to the bulk of the silicon substrate within at least some of the elongate channels, wherein the contacts are narrower than the channels; and gaps in the emitter between at least some of the elongate contacts and the emitter layer on the sides of the contacts.

    Abstract translation: 一种光伏电池,所述电池包括:具有前表面和后表面的体硅材料的硅衬底; 在所述衬底的后表面上的发射极层; 细长通道穿过发射极层; 在至少一些细长通道内的硅衬底本体的细长接触,其中触点比通道窄; 以及发射器中至少一些细长触头和触点侧面上的发射极层之间的间隙。

Patent Agency Ranking