摘要:
Provided is a liquid crystal display device (69) including: a liquid crystal display panel unit (49); a backlight unit (59); and a front bezel (BZ1) and a rear bezel (BZ2) for housing the liquid crystal display panel unit and the backlight unit. The liquid crystal display panel unit includes an FPC board (1) which winds around side walls (WL2) and a bottom surface (31) of the rear bezel so as to cover the side walls (WL2) and the bottom surface (31). Outer claw sections (CW1) projecting inward from the side walls (WL1) of the front bezel and inner claw sections (CW2) projecting outward from the side walls of the rear bezel are engaged with each other through openings (HL) provided in the FPC board, thereby integrating the front bezel and the rear bezel.
摘要:
A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate.
摘要:
A camera with a built-in projector includes: a camera unit equipped with photographing components including an optical system; and a projector module equipped with a projecting optical system, with an optical axis extending along a longer side of the projector module running substantially parallel to an optical axis of the camera unit extending along a longer side of the camera unit.
摘要:
A thick steel plate and a UOE steel pipe having a high strength of at least X60 grade and improved resistance to HIC have a chemical composition consisting essentially of, in mass percent, C: 0.02-0.07%, Si: 0.05-0.50%, Mn: 1.1-1.6%, P: at most 0.015%, S: at most 0.002%, Nb: 0.005-0.060%, Ti: 0.005-0.030%, Al: 0.005-0.06%, Ca: 0.0005-0.0060%, N: 0.0015-0.007%, at least one of Cu, Ni, Cr, and Mo in a total amount of greater than 0.1% and less than 1.5%, and a remainder of Fe and impurities, wherein the degrees of segregation of Nb and Ti are both at most 2.0, and the ratio of (the degree of Nb segregation)/(the degree of Mn segregation) and the ratio of (the degree of Ti segregation)/(the degree of Mn segregation) are both at least 1.0 and at most 1.5.
摘要:
The present invention provides a semiconductor device including at least one of an insulating layer and a semiconductor layer each including a hole formed therein, and a through electrode provided in the hole. In the semiconductor device, the side wall of the hole is constituted of a first region from the opening of the hole to a predetermined position between the opening of the hole and the bottom surface of the hole, and a second region from the predetermined position to the bottom surface of the hole. The through electrode includes a seed layer and a plating layer. The seed layer covers the second region and the bottom surface of the hole without covering the first region. In addition, the plating layer covers the seed layer and at least a part of the first region.
摘要:
A hydraulic device includes a switch-over valve 1140 provided at a section of a sub-passage 1105 located downstream of a location where a first bypass passage 1117 is connected and located upstream of a primary regulator 1110. The switch-over valve 1140 is switched between a blocked state, where supply of hydraulic oil to a section of the sub-passage 1105 located downstream of the switch-over valve 1140 is blocked, and a communication state, where supply of hydraulic oil to the section of the sub-passage 1105 located downstream of the switch-over valve 1140 is permitted. In the hydraulic device, when the switch-over valve 1140 is switched to the communication state, as a discharge performance of a main pump 1102 increases, a first check valve 1118 closes. Supply paths for hydraulic oil discharged from the sub-pump 1103 are automatically switched in accordance with the discharge performance of the main pump 1102. When the switch-over valve 1140 is switched to the blocked state, the first check valve 1118 opens and hydraulic oil discharged from the sub-pump 1103 is introduced into a main passage 1104.
摘要:
The present invention provides an organic electronic element manufacturing method which provides a low manufacturing cost and excellent performance stability, and specifically an organic electronic element manufacturing method which provides a low manufacturing cost, and minimizes emission unevenness, lowering of emission efficiency and shortening of lifetime due to deterioration of as barrier property of sealing. The organic electronic element manufacturing method is featured in that it comprises the steps of forming an organic electronic structure composed of a first electrode, at least one organic layer and a second electrode on a flexible substrate, and applying a flexible sealing substrate to the organic electronic structure, followed by heating treatment, wherein a heating temperature, at which the heating treatment is carried out, is less than Tg (a glass transition temperature) of the substrate and not less than Tg of the sealing substrate.
摘要:
According to one embodiment, an inkjet image forming apparatus includes an inkjet head configured to discharge water-based ink and form an image on a surface of a recording medium, a medium conveyance part configured to convey the recording medium, a solution imparting part that is disposed upstream of the inkjet head in a recording medium conveyance direction and uses another inkjet head to impart a solution to the surface of the recording medium on which the image is formed, and a controller configured to calculate an imparting amount of the solution to be imparted to the recording medium and control an imparting operation to the recording medium.
摘要:
A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.
摘要:
An FPC board (1) is mounted on a front bezel (BZ1) and a rear bezel (BZ2). The outer claw (CW1) of the front bezel (BZ1) and the inner claw (CW2) of the rear bezel (BZ2) are engaged with each other while holding the ground portion (12) of the FPC board (1) therebetween.