公开(公告)号：US11335718B2

公开(公告)日：2022-05-17

申请号：US16931229

申请日：2020-07-16

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Cunyu Yang ,  Gang Chen

IPC: H01L27/146 ,  H04N5/33

Abstract: A pixel cell includes a photodiode disposed in a pixel cell region and proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside to the photodiode. A cell deep trench isolation (CDTI) structure is disposed in the pixel cell region along an optical path of the incident light to the photodiode and proximate to the backside. The CDTI structure includes a central portion extending a first depth from the backside towards the front side. Planar outer portions extend laterally outward from the central portion. The planar output portions further extend a second depth from the backside towards the front side. The first depth is greater than the second depth. Planes formed by each of the planar outer portions intersect in a line coincident with a longitudinal center line of the central portion of the CDTI structure.

公开(公告)号：US20220005849A1

公开(公告)日：2022-01-06

申请号：US16918929

申请日：2020-07-01

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen ,  Kenny Geng

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes photodiodes disposed in a pixel region and proximate to a front side of a semiconductor layer. A backside metal grating is formed in a backside oxide layer disposed proximate to a backside of the semiconductor layer. A deep trench isolation (DTI) structure with a plurality of pixel region portions and an edge region portion is formed in the semiconductor layer. The pixel region portions are disposed in the pixel region of the semiconductor layer such that incident light is directed through the backside metal grating, through the backside of the semiconductor layer, and between the pixel region portions of the DTI structure to the photodiodes. The edge region portion of the DTI structure is disposed in an edge region outside of the pixel region. The edge region portion of the DTI structure is biased with a DTI bias voltage.

公开(公告)号：US10964741B1

公开(公告)日：2021-03-30

申请号：US16575269

申请日：2019-09-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Qin Wang

IPC: H01L27/146

Abstract: Backside illuminated sensor pixel structure. In one embodiment, an image sensor includes a plurality of photodiodes arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive incoming light through a backside of the semiconductor substrate. The individual photodiodes have a diffusion region formed in an epitaxial region and a plurality of storage nodes (SGs) that are disposed on the front side of the semiconductor substrate and formed in the epitaxial region. An opaque isolation layer having a plurality of opaque isolation elements is disposed proximate to the front side of the semiconductor substrate and proximate to the diffusion region of the plurality of photodiodes. The opaque isolation elements are configured to block a path of incoming light from the backside of the semiconductor substrate toward the storage nodes.

公开(公告)号：US20190165033A1

公开(公告)日：2019-05-30

申请号：US16242924

申请日：2019-01-08

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen ,  Duli Mao

IPC: H01L27/146 ,  H01L23/00 ,  H01L27/148 ,  H01L21/768

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.

公开(公告)号：US10290670B2

公开(公告)日：2019-05-14

申请号：US15195926

申请日：2016-06-28

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai ,  Lequn Liu

IPC: H01L27/146

Abstract: A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

公开(公告)号：US10211253B1

公开(公告)日：2019-02-19

申请号：US15826276

申请日：2017-11-29

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen ,  Duli Mao

IPC: H01L27/146 ,  H01L27/148 ,  H01L21/768 ,  H01L23/00

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge, and a metal grid, including a metal shield that is coplanar with the metal grid, disposed proximate to a backside of the semiconductor material. The metal grid is optically aligned with the plurality of photodiodes to direct the image light into the plurality of photodiodes, and a contact pad is disposed in a trench in the semiconductor material. The contact pad is coupled to the metal shield to ground the metal shield.

公开(公告)号：US10044960B2

公开(公告)日：2018-08-07

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

公开(公告)号：US09986192B1

公开(公告)日：2018-05-29

申请号：US15362402

申请日：2016-11-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Chih-Wei Hsiung

IPC: H04N5/378 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

Abstract: An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.

公开(公告)号：US20180098008A1

公开(公告)日：2018-04-05

申请号：US15285352

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14636 ,  H01L27/14656 ,  H04N5/374 ,  H04N5/378

Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.

公开(公告)号：US09881963B1

公开(公告)日：2018-01-30

申请号：US15263936

申请日：2016-09-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Eric A. G. Webster ,  Duli Mao ,  Vincent Venezia ,  Dyson H. Tai

IPC: H01L27/00 ,  H01L27/146 ,  H01L31/107

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14683 ,  H01L31/107

Abstract: An avalanche photodiode sensor includes a plurality of avalanche photodiodes disposed in a semiconductor material where individual avalanche photodiodes in the plurality of avalanche photodiodes have an internal electric field parallel with a first surface of the semiconductor material. The individual avalanche photodiodes in the plurality of avalanche photodiodes include a p-doped semiconductor region which extends into the semiconductor material, and an n-doped semiconductor region which extends into the semiconductor material. The internal electric field extends between the p-doped semiconductor region and the n-doped semiconductor region. Processing methods as examples are also proposed.