公开(公告)号：US20110103251A1

公开(公告)日：2011-05-05

申请号：US12937275

申请日：2009-03-12

申请人： Zijiang Ma ,  Zhifeng Ma ,  Bin Yu

发明人： Zijiang Ma ,  Zhifeng Ma ,  Bin Yu

IPC分类号： H04L12/26

CPC分类号： H04W72/005 ,  H04W48/12 ,  H04W72/042

摘要： A configuration method and an indication method of MBSFN frames and an identifying method used by a terminal applied in a long term evolution system are disclosed in the present invention, which include: an access network sends configuration parameters of the MBSFN frame to a mobile terminal determining whether the wireless frame received is an MBSFN frame according to the configuration parameters, the configuration parameters including a repetition period of the MBSFN frames distributed in system-set time. With the present invention, it could consume less bytes in system message to complete the configuration of the MBSFN sub-frames and could save system resources.

摘要翻译： 本发明公开了一种MBSFN帧的配置方法和指示方法以及应用于长期演进系统中的终端使用的识别方法，其特征在于：接入网将MBSFN帧的配置参数发送到移动终端确定 接收到的无线帧是否是根据配置参数的MBSFN帧，配置参数包括以系统设置时间分布的MBSFN帧的重复周期。 利用本发明，可以在系统消息中消耗更少的字节来完成MBSFN子帧的配置并且可以节省系统资源。

公开(公告)号：US20100243701A1

公开(公告)日：2010-09-30

申请号：US12208948

申请日：2008-09-11

申请人： Bin Yu

发明人： Bin Yu

IPC分类号： B25C5/11

CPC分类号： B25C5/0242 ,  B25C5/11

摘要： A lever stapler includes a plastic cover, a pressure plate, a stapling bracket, a staple cartridge, a staple slot, a staple driver, a staple driving shaft, a staple driving spring, a staple plate, a support stand, a base, and a rotating shaft. The pressure plate includes a lever pressing plate disposed thereon, and a rear end of the lever pressing plate is hinged onto the support stand through a fulcrum shaft, and the lever pressing plate further includes a lever shaft contacted with the top of the pressure plate. The lever stapler of the invention enhances the stapling force to achieve the effects of reducing the required force for the stapling and stapling a thick document easily.

摘要翻译： 杠杆装订器包括塑料盖，压板，装订托架，钉仓，订书钉槽，订书钉驱动器，订书钉驱动轴，订书钉驱动弹簧，订书钉板，支架，基座和 旋转轴。 压板包括设置在其上的杠杆压板，杠杆按压板的后端通过支点轴铰接在支撑架上，杠杆压板还包括与压板顶部接触的杠杆轴。 本发明的杠杆装订器增强了装订力，以实现减少装订所需的力并且容易地装订厚文件的效果。

公开(公告)号：USD622702S1

公开(公告)日：2010-08-31

申请号：US29346348

申请日：2009-10-30

申请人： Hao Yu Sheng ,  Bin Yu

设计人： Hao Yu Sheng ,  Bin Yu

公开(公告)号：US20100011031A1

公开(公告)日：2010-01-14

申请号：US12554541

申请日：2009-09-04

申请人： Wei Huang ,  Yizheng Zhou ,  Bin Yu ,  Wenting Tang ,  Christian F. Beedgen

发明人： Wei Huang ,  Yizheng Zhou ,  Bin Yu ,  Wenting Tang ,  Christian F. Beedgen

IPC分类号： G06F17/30 ,  G06F9/44

CPC分类号： H04L63/1425 ,  G06F11/3476 ,  G06F17/30595 ,  G06F21/552 ,  G06F2201/86 ,  G06F2221/034 ,  H04L63/1408

摘要： A logging system includes an event receiver and a storage manager. The receiver receives log data, processes it, and outputs a column-based data “chunk.” The manager receives and stores chunks. The receiver includes buffers that store events and a metadata structure that stores metadata about the contents of the buffers. Each buffer is associated with a particular event field and includes values from that field from one or more events. The metadata includes, for each “field of interest,” a minimum value and a maximum value that reflect the range of values of that field over all of the events in the buffers. A chunk is generated for each buffer and includes the metadata structure and a compressed version of the buffer contents. The metadata structure acts as a search index when querying event data. The logging system can be used in conjunction with a security information/event management (SIEM) system.

摘要翻译： 记录系统包括事件接收器和存储管理器。 接收器接收日志数据，处理它，并输出基于列的数据“块”。 经理收到并存储块。 接收器包括存储事件的缓冲器和存储关于缓冲器的内容的元数据的元数据结构。 每个缓冲区与一个特定事件字段相关联，并包含一个或多个事件的该字段的值。 对于每个“感兴趣的领域”，元数据包括反映缓冲器中的所有事件的该字段的值的范围的最小值和最大值。 为每个缓冲区生成一个块，并包括元数据结构和缓冲区内容的压缩版本。 元数据结构在查询事件数据时用作搜索索引。 记录系统可以与安全信息/事件管理（SIEM）系统结合使用。

公开(公告)号：US07432557B1

公开(公告)日：2008-10-07

申请号：US10755344

申请日：2004-01-13

申请人： Matthew S. Buynoski ,  Judy Xilin An ,  Bin Yu

发明人： Matthew S. Buynoski ,  Judy Xilin An ,  Bin Yu

IPC分类号： H01L23/62

CPC分类号： H01L29/785 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/78603 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming one or more FinFET devices includes forming a source region and a drain region in an oxide layer, where the oxide layer is disposed on a substrate, and etching the oxide layer between the source region and the drain region to form a group of oxide walls and channels for a first device. The method further includes depositing a connector material over the oxide walls and channels for the first device, forming a gate mask for the first device, removing the connector material from the channels, depositing channel material in the channels for the first device, forming a gate dielectric for first device over the channels, depositing a gate material over the gate dielectric for the first device, and patterning and etching the gate material to form at least one gate electrode for the first device.

摘要翻译： 半导体器件包括源极区域，漏极区域和形成在源极区域和漏极区域之间的沟道组。 通道组中的至少一个通道通过氧化物结构与通道组中的另一个通道分离。 半导体器件还包括至少一个形成在该组沟道的至少一部分上的栅极。

公开(公告)号：US20080197025A1

公开(公告)日：2008-08-21

申请号：US11090944

申请日：2005-03-25

申请人： Yanxiu Zhou ,  Bin Yu ,  Kalle Levon

发明人： Yanxiu Zhou ,  Bin Yu ,  Kalle Levon

IPC分类号： G01N27/406

CPC分类号： C12Q1/6825 ,  C12Q2600/156 ,  G01N27/333 ,  C12Q2565/518

摘要： Ionic interactions are monitored to detect hybridization. The measurement may be done measuring the potential change in the solution with the ion sensitive electrode (which may be the conducting polymer (e.g., polyaniline) itself), without applying any external energy during the binding. The double helix formation during the complimentary hybridization makes this electrode act as an ion selective electrode—the nucleotide hydrogen bonding is specific and thus monitoring the ionic phosphate group addition becomes selective. Polyaniline on the surface of nylon film forms a positively charged polymer film. Thiol linkage can be utilized for polyaniline modification and thiol-modified single strand oligonucleotide chains can be added to polyaniline. The sensitivity is because the double helix formation during the complimentary hybridization makes this electrode act as an ion selective electrode as the nucleotide hydrogen bonding is specific and thus monitoring the ionic phosphate group addition becomes selective.

摘要翻译： 监测离子相互作用以检测杂交。 测量可以通过离子敏感电极（其可以是导电聚合物（例如聚苯胺）本身））测量溶液中的潜在变化，而在结合期间不施加任何外部能量。 在互补杂交期间的双螺旋形成使得该电极用作离子选择性电极 - 核苷酸氢键是特异性的，因此监测离子性磷酸酯基添加成为选择性的。 尼龙膜表面的聚苯胺形成带正电的聚合物膜。 硫醇连接可用于聚苯胺改性，硫醇改性的单链寡核苷酸链可以加入到聚苯胺中。 敏感性是因为互补杂交期间的双螺旋形成使得该电极作为离子选择性电极，因为核苷酸氢键是特异性的，因此监测离子性磷酸酯基添加成为选择性的。

公开(公告)号：US20080054431A1

公开(公告)日：2008-03-06

申请号：US11513765

申请日：2006-08-31

申请人： Tingqing Wang ,  Moon Wang ,  Bin Yu

发明人： Tingqing Wang ,  Moon Wang ,  Bin Yu

IPC分类号： H01L23/12 ,  H01L21/58

CPC分类号： H01L21/565 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L25/03 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/45144 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2225/06568 ,  H01L2924/01079 ,  H01L2924/078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A stacked chip semiconductor package may be formed in a “package in package” arrangement. The internal package may include two substrates. One substrate may have two dice stacked on each of two opposed sides and the other substrate may have two dice stacked on it as well. The two stacked substrates may be separated by molding compound and then electrically coupled to a third substrate. Thereafter, the entire assembly may be encapsulated.

摘要翻译： 堆叠式芯片半导体封装可以形成为“封装封装”布置。 内部封装可以包括两个基板。 一个基底可以具有两个堆叠在两个相对侧中的每一个上的骰子，另一个基底也可以在其上堆叠两个骰子。 两个堆叠的基板可以通过模制化合物分离，然后电耦合到第三基板。 此后，整个组件可以被封装。

公开(公告)号：US07235436B1

公开(公告)日：2007-06-26

申请号：US10614051

申请日：2003-07-08

申请人： Ming-Ren Lin ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

发明人： Ming-Ren Lin ,  Zoran Krivokapic ,  Haihong Wang ,  Bin Yu

IPC分类号： H01L21/84

CPC分类号： H01L21/845 ,  H01L27/1211 ,  H01L29/66795 ,  H01L29/785

摘要： A method for doping fin structures in FinFET devices includes forming a first glass layer on the fin structure of a first area and a second area. The method further includes removing the first glass layer from the second area, forming a second glass layer on the fin structure of the first area and the second area, and annealing the first area and the second area to dope the fin structures.

摘要翻译： 在FinFET器件中掺杂鳍结构的方法包括在第一区域和第二区域的鳍结构上形成第一玻璃层。 该方法还包括从第二区域去除第一玻璃层，在第一区域和第二区域的翅片结构上形成第二玻璃层，并退火第一区域和第二区域以掺杂翅片结构。

公开(公告)号：US07211489B1

公开(公告)日：2007-05-01

申请号：US10934378

申请日：2004-09-07

申请人： Qi Xiang ,  Robert B. Ogle ,  Eric N. Paton ,  Cyrus E. Tabery ,  Bin Yu

发明人： Qi Xiang ,  Robert B. Ogle ,  Eric N. Paton ,  Cyrus E. Tabery ,  Bin Yu

IPC分类号： H01L21/336

CPC分类号： H01L21/268 ,  H01L21/26506 ,  H01L21/26586 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659

摘要： The present invention enables the production of improved high-reliability, high-density semiconductor devices. The present invention provides the high-density semiconductor devices by decreasing the size of semiconductor device structures, such as gate channel lengths. Short-channel effects are prevented by the use of highly localized halo implant regions formed in the device channel. Highly localized halo implant regions are formed by a tilt pre-amorphization implant and a laser thermal anneal of the halo implant region.

摘要翻译： 本发明能够制造改进的高可靠性，高密度的半导体器件。 本发明通过减小诸如栅极沟道长度的半导体器件结构的尺寸来提供高密度半导体器件。 通过使用在器件通道中形成的高度局部化的注入区来防止短沟道效应。 通过倾斜预非晶化植入和晕圈植入区域的激光热退火形成高度局部化的注入区域。

公开(公告)号：US07196374B1

公开(公告)日：2007-03-27

申请号：US10653274

申请日：2003-09-03

申请人： Ming-Ren Lin ,  Bin Yu

发明人： Ming-Ren Lin ,  Bin Yu

IPC分类号： H01L29/76

CPC分类号： H01L29/785 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/78687

摘要： A semiconductor device includes a substrate and an insulating layer on the substrate. The semiconductor device also includes a fin structure formed on the insulating layer, where the fin structure includes first and second side surfaces, a dielectric layer formed on the first and second side surfaces of the fin structure, a first gate electrode formed adjacent the dielectric layer on the first side surface of the fin structure, a second gate electrode formed adjacent the dielectric layer on the second side surface of the fin structure, and a doped structure formed on an upper surface of the fin structure in the channel region of the semiconductor device.

摘要翻译： 半导体器件包括衬底和衬底上的绝缘层。 半导体器件还包括形成在绝缘层上的翅片结构，其中鳍结构包括第一和第二侧表面，形成在鳍结构的第一和第二侧表面上的电介质层，形成在电介质层附近的第一栅电极 在翅片结构的第一侧表面上形成与鳍结构的第二侧表面上的电介质层相邻的第二栅电极，以及在半导体器件的沟道区中形成在鳍结构的上表面上的掺杂结构 。