公开(公告)号：US20050218420A1

公开(公告)日：2005-10-06

申请号：US11076963

申请日：2005-03-11

申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

IPC分类号： H01S5/40 ,  H01L21/00 ,  H01S5/022 ,  H01S5/22 ,  H01S5/32 ,  H01L33/00

CPC分类号： H01S5/02272 ,  H01L2224/48463 ,  H01S5/02469 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087

摘要： A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device.

摘要翻译： 蓝紫色半导体激光器件具有形成在其上表面上的p电极和形成在其下表面上的n电极。 在蓝紫色半导体激光器件中，形成p-n结表面，其中p型半导体和n型半导体接合。 红色半导体激光器件具有形成在其上表面上的n电极和形成在其下表面上的p电极。 在红色半导体激光器件中，形成p型半导体和n型半导体的p-n结表面。 红色半导体激光器件的p电极被接合到蓝紫色半导体激光器件的p电极，使得红色半导体激光器件不与蓝紫色的蓝紫色光束发射点重叠 半导体激光器件。

公开(公告)号：US07881356B2

公开(公告)日：2011-02-01

申请号：US12333764

申请日：2008-12-12

申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

IPC分类号： H01S5/00

CPC分类号： H01S5/4025 ,  H01S5/4087

摘要： Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.

摘要翻译： 第二和第三p侧焊盘电极形成在第一p侧焊盘电极两侧的蓝紫色半导体激光器件的绝缘膜上。 第二p侧焊盘电极和第三p侧焊盘电极彼此分开地形成。 焊接膜分别形成在第二和第三p侧焊盘电极的上表面上。 红色半导体激光器件的第四p侧焊盘电极被粘合到第二p侧焊盘电极上，其中夹有相应的焊料膜。 红外半导体激光器件的第五p侧焊盘电极被粘合到第三p侧焊盘电极上，其中夹有相应的焊料膜。 第二和第三p侧焊盘电极彼此分开地形成，使得第四和第五p侧焊盘电极彼此电隔离。

公开(公告)号：US20100260227A1

公开(公告)日：2010-10-14

申请号：US12821826

申请日：2010-06-23

申请人： Yasuyuki BESSHO ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

发明人： Yasuyuki BESSHO ,  Masayuki Hata ,  Daijiro Inoue ,  Tsutomu Yamaguchi

IPC分类号： H01S5/40 ,  H01L21/302 ,  H01S5/323

CPC分类号： H01S5/02272 ,  H01L2224/48463 ,  H01S5/02469 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4043 ,  H01S5/4087

摘要： A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device.

摘要翻译： 蓝紫色半导体激光器件具有形成在其上表面上的p电极和形成在其下表面上的n电极。 在蓝紫色半导体激光器件中，形成p-n结表面，其中p型半导体和n型半导体接合。 红色半导体激光器件具有形成在其上表面上的n电极和形成在其下表面上的p电极。 在红色半导体激光器件中，形成p型半导体和n型半导体的p-n结表面。 红色半导体激光器件的p电极被接合到蓝紫色半导体激光器件的p电极，使得红色半导体激光器件不与蓝紫色的蓝紫色光束发射点重叠 半导体激光器件。

公开(公告)号：US07672351B2

公开(公告)日：2010-03-02

申请号：US11390474

申请日：2006-03-28

申请人： Yasuyuki Bessho ,  Masayuki Hata

发明人： Yasuyuki Bessho ,  Masayuki Hata

IPC分类号： H01S5/00

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  G11B7/1275 ,  G11B7/22 ,  G11B2007/0006 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73257 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/22 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4087 ,  H01L2924/00014

摘要： A projection and a raised portion are formed on an upper surface of a blue-violet semiconductor laser device. A projection and a raised portion are formed on a lower surface of a red semiconductor laser device. The height of the projection is smaller than the height of the raised portion, and the height of the projection is smaller than the height of the raised portion. The blue-violet semiconductor laser device and the red semiconductor laser device are joined to each other such that the projections are opposed to each other.

摘要翻译： 在蓝紫色半导体激光器件的上表面上形成突起和凸起部分。 在红色半导体激光器件的下表面上形成突起和凸起部分。 突起的高度小于凸部的高度，突起的高度比凸起部的高度小。 蓝紫色半导体激光器件和红色半导体激光器件彼此接合，使得突起彼此相对。

公开(公告)号：US20090262771A1

公开(公告)日：2009-10-22

申请号：US12090334

申请日：2007-07-31

申请人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura ,  Seiichi Tokunaga

发明人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura ,  Seiichi Tokunaga

IPC分类号： H01S5/026 ,  H01L21/00

CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion constituting a waveguide extending in a direction F. The ridge portion (waveguide) is formed on a region approaching a first side from the center of the semiconductor layer. On a region opposite to the first side of the ridge portion (waveguide), a cleavage introduction step is formed from the side of the semiconductor layer, to extend in a direction intersecting with the extensional direction F of the ridge portion (waveguide).

摘要翻译： 可以获得能够抑制波导损伤的半导体激光装置。 这种GaN基半导体激光器芯片（半导体激光器件）包括氮化物基半导体的n型GaN衬底和形成在n型GaN衬底上的氮化物基半导体的半导体层，并且具有构成 沿方向F延伸的波导。脊部（波导）形成在从半导体层的中心接近第一侧的区域上。 在与脊部（波导）的第一侧相对的区域上，从半导体层的侧面开始，在与脊部（波导管）的延伸方向F相交的方向上延伸。

公开(公告)号：US20060251138A1

公开(公告)日：2006-11-09

申请号：US11387061

申请日：2006-03-23

申请人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Seiji Kajiyama ,  Yoichi Tsuchiya

发明人： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Seiji Kajiyama ,  Yoichi Tsuchiya

IPC分类号： H01S5/00

CPC分类号： H01S5/4043 ,  B82Y20/00 ,  G11B7/123 ,  G11B7/1275 ,  G11B2007/0006 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4031 ,  H01S5/4087 ,  H01L2924/00014

摘要： A blue-violet emission point, an infrared emission point, and a red emission point in a semiconductor laser apparatus are arranged so as to be arranged in this order on a substantially straight line along a first direction. A blue-violet laser beam emitted from the blue-violet emission point and a red laser beam emitted from the red emission point are incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical disk, is returned from the optical disk, and is introduced into an photodetector. The infrared laser beam emitted from the infrared emission point is incident on the optical disk by the optical system, is returned from the optical disk, and is introduced into the photodetector.

摘要翻译： 半导体激光装置中的蓝紫色发射点，红外发射点和红色发射点被布置成沿着第一方向以大致直线排列。 从蓝紫色发射点发射的蓝紫色激光束和从红色发射点发射的红色激光束通过包括偏振分束器，准直透镜，光束扩展器，光束扩散器 λ/ 4板，物镜，柱面透镜和光盘从光盘返回，并被引入光电检测器。 从红外发射点发射的红外激光束通过光学系统入射到光盘上，从光盘返回，并被引入光电检测器。

公开(公告)号：US20060054906A1

公开(公告)日：2006-03-16

申请号：US11215129

申请日：2005-08-31

申请人： Daijiro Inoue ,  Masayuki Hata ,  Yasuyuki Bessho

发明人： Daijiro Inoue ,  Masayuki Hata ,  Yasuyuki Bessho

IPC分类号： H01L33/00

CPC分类号： G11B7/1275 ,  B82Y20/00 ,  G11B2007/0006 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/0427 ,  H01S5/06226 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/3436 ,  H01S5/4043 ,  H01S5/4087 ,  H01S2301/173 ,  H01L2924/00014

摘要： A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer is formed on the insulating layer. The red semiconductor laser device is stacked on the conductive layer through a fusion layer. The conductive layer is electrically connected to a p-side pad electrode of the red semiconductor laser device. The n-side pad electrode of the blue-violet semiconductor laser device and the n-side pad electrode of the red semiconductor laser device are electrically connected to each other.

摘要翻译： 通过多个熔融层将辅助基板，蓝紫色半导体激光器件，绝缘层和红色半导体激光器件按顺序堆叠在支撑构件上。 绝缘层堆叠在蓝紫色半导体激光器件的n侧焊盘电极上，并且在绝缘层上形成导电层。 红色半导体激光器件通过熔融层堆叠在导电层上。 导电层与红色半导体激光器件的p侧焊盘电极电连接。 蓝紫色半导体激光器件的n侧焊盘电极和红色半导体激光器件的n侧焊盘电极彼此电连接。

公开(公告)号：US20050242361A1

公开(公告)日：2005-11-03

申请号：US11093024

申请日：2005-03-30

申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

IPC分类号： H01L21/00 ,  H01S5/026 ,  H01S5/22 ,  H01S5/40 ,  H01L33/00

CPC分类号： H01S5/4025 ,  H01S5/4087

摘要： Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.

摘要翻译： 第二和第三p侧焊盘电极形成在第一p侧焊盘电极两侧的蓝紫色半导体激光器件的绝缘膜上。 第二p侧焊盘电极和第三p侧焊盘电极彼此分开地形成。 焊接膜分别形成在第二和第三p侧焊盘电极的上表面上。 红色半导体激光器件的第四p侧焊盘电极被粘合到第二p侧焊盘电极上，其中夹有相应的焊料膜。 红外半导体激光器件的第五p侧焊盘电极被粘合到第三p侧焊盘电极上，其中夹有相应的焊料膜。 第二和第三p侧焊盘电极彼此分开地形成，使得第四和第五p侧焊盘电极彼此电隔离。

公开(公告)号：US20140043569A1

公开(公告)日：2014-02-13

申请号：US14113062

申请日：2012-04-13

申请人： Kohji Yabuta ,  Tomotoshi Tsujioka ,  Kosuke Nagata ,  Mikihiro Noma ,  Masayuki Hata ,  Kiyoshi Inada ,  Hideaki Takizawa ,  Masahiro Kihara

发明人： Kohji Yabuta ,  Tomotoshi Tsujioka ,  Kosuke Nagata ,  Mikihiro Noma ,  Masayuki Hata ,  Kiyoshi Inada ,  Hideaki Takizawa ,  Masahiro Kihara

IPC分类号： G02F1/1335

CPC分类号： G02F1/133509 ,  G02B5/008 ,  G02B27/2214 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1345 ,  G02F1/1347 ,  G02F2001/133354 ,  G02F2001/133388 ,  G02F2201/44 ,  G02F2202/28 ,  G06F3/041 ,  H04N13/31

摘要： A liquid crystal display device includes a liquid crystal display panel, a functional panel, a photo curable adhesive, a transparent electrode, and a light blocking line. The liquid crystal panel includes a display area to display an image and a non-display area surrounding the display area. The functional panel is attached to the liquid crystal panel, and includes a display overlapping area overlapping with the display area and a display non-overlapping area overlapping with the non-display area in a plan view. The photo curable adhesive is arranged between the panels and cured by light applied thereto. The transparent electrode is arranged in the display overlapping area and made of light transmissive conductive material. The light blocking line is arranged in the display non-overlapping area and made of light shielding metal material. The light blocking line partially has a light-transmission cutout that is configured to allow the light to pass therethrough.

摘要翻译： 液晶显示装置包括液晶显示面板，功能面板，光固化粘合剂，透明电极和遮光线。 液晶面板包括显示图像的显示区域和围绕显示区域的非显示区域。 功能面板附接到液晶面板，并且在平面图中包括与显示区域重叠的显示器重叠区域和与非显示区域重叠的显示器非重叠区域。 光固化粘合剂布置在面板之间并通过施加于其上的光固化。 透明电极布置在显示器重叠区域中并由透光导电材料制成。 遮光线布置在显示器非重叠区域中，由遮光金属材料制成。 遮光线部分地具有被配置为允许光通过的光透射切口。

公开(公告)号：US20120299052A1

公开(公告)日：2012-11-29

申请号：US13576954

申请日：2011-02-04

申请人： Nobuhiko Hayashi ,  Masayuki Hata

发明人： Nobuhiko Hayashi ,  Masayuki Hata

IPC分类号： H01L33/48

CPC分类号： H01S5/02204 ,  G11B7/127 ,  H01L23/26 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01L2924/19107 ,  H01S5/02212 ,  H01S5/0222 ,  H01S5/02244 ,  H01S5/02296 ,  H01L2924/00014

摘要： A semiconductor light-emitting device capable of inhibiting a semiconductor light-emitting element from deterioration and capable of inhibiting the size of a package from enlargement is obtained. The semiconductor light-emitting device includes a semiconductor light-emitting element and a package sealing the semiconductor light-emitting element. The package includes a base portion mounted with the semiconductor light-emitting element and a cap portion mounted on the base portion for covering the semiconductor light-emitting element. At least either one of the base portion and the cap portion is made of a mixture of resin and a gas absorbent.

摘要翻译： 可以获得能够抑制半导体发光元件劣化并且能够抑制封装尺寸放大的半导体发光器件。 半导体发光器件包括半导体发光元件和密封半导体发光元件的封装。 封装包括安装有半导体发光元件的基座部分和安装在基座部分上用于覆盖半导体发光元件的盖部分。 底座部分和盖部分中的至少一个由树脂和气体吸收剂的混合物制成。