公开(公告)号：US07355208B2

公开(公告)日：2008-04-08

申请号：US11195637

申请日：2005-08-03

申请人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

发明人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

公开(公告)号：US20050263778A1

公开(公告)日：2005-12-01

申请号：US11195637

申请日：2005-08-03

申请人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

发明人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01S5/02 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343 ,  H01L27/15

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

摘要翻译： 获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。 该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层 以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。 因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。 当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。 第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。

公开(公告)号：US06994751B2

公开(公告)日：2006-02-07

申请号：US10081180

申请日：2002-02-25

申请人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

发明人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

IPC分类号： C30B25/18

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

公开(公告)号：US20120299052A1

公开(公告)日：2012-11-29

申请号：US13576954

申请日：2011-02-04

申请人： Nobuhiko Hayashi ,  Masayuki Hata

发明人： Nobuhiko Hayashi ,  Masayuki Hata

IPC分类号： H01L33/48

CPC分类号： H01S5/02204 ,  G11B7/127 ,  H01L23/26 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01L2924/19107 ,  H01S5/02212 ,  H01S5/0222 ,  H01S5/02244 ,  H01S5/02296 ,  H01L2924/00014

摘要： A semiconductor light-emitting device capable of inhibiting a semiconductor light-emitting element from deterioration and capable of inhibiting the size of a package from enlargement is obtained. The semiconductor light-emitting device includes a semiconductor light-emitting element and a package sealing the semiconductor light-emitting element. The package includes a base portion mounted with the semiconductor light-emitting element and a cap portion mounted on the base portion for covering the semiconductor light-emitting element. At least either one of the base portion and the cap portion is made of a mixture of resin and a gas absorbent.

摘要翻译： 可以获得能够抑制半导体发光元件劣化并且能够抑制封装尺寸放大的半导体发光器件。 半导体发光器件包括半导体发光元件和密封半导体发光元件的封装。 封装包括安装有半导体发光元件的基座部分和安装在基座部分上用于覆盖半导体发光元件的盖部分。 底座部分和盖部分中的至少一个由树脂和气体吸收剂的混合物制成。

公开(公告)号：US07829900B2

公开(公告)日：2010-11-09

申请号：US12071978

申请日：2008-02-28

申请人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

发明人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

摘要翻译： 获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。 该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层 以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。 因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。 当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。 第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。

公开(公告)号：US06759139B2

公开(公告)日：2004-07-06

申请号：US10081842

申请日：2002-02-25

申请人： Tatsuya Kunisato ,  Nobuhiko Hayashi ,  Hiroki Ohbo ,  Masayuki Hata ,  Tsutomu Yamaguchi

发明人： Tatsuya Kunisato ,  Nobuhiko Hayashi ,  Hiroki Ohbo ,  Masayuki Hata ,  Tsutomu Yamaguchi

IPC分类号： H01L2912

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/02387 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/2003 ,  H01S5/32341 ,  Y10T428/12528 ,  Y10T428/24802

摘要： A nitride-based semiconductor element enabling formation of a nitride-based semiconductor layer having low dislocation density, consisting of a material different from that of an underlayer, on the underlayer with a small thickness is obtained. This nitride-based semiconductor element comprises a plurality of mask layers formed at a prescribed interval to be in contact with the upper surface of the underlayer while partially exposing the underlayer and the nitride-based semiconductor layer, formed on the upper surface of the underlayer and the mask layers, consisting of the material different from that of the underlayer. The minimum distance between adjacent mask layers is smaller than the width of an exposed part of the underlayer located between the adjacent mask layers.

摘要翻译： 获得能够在厚度较小的底层上形成由不同于下层的材料构成的位错密度低的氮化物系半导体元件的氮化物系半导体元件。 这种氮化物基半导体元件包括以规定间隔形成的多个掩模层，以与底层的上表面接触，同时部分地暴露形成在底层的上表面上的下层和氮化物类半导体层， 掩模层，由与底层不同的材料组成。 相邻掩模层之间的最小距离小于位于相邻掩模层之间的底层的暴露部分的宽度。

公开(公告)号：US20080224151A1

公开(公告)日：2008-09-18

申请号：US12071978

申请日：2008-02-28

申请人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

发明人： Masayuki Hata ,  Tatsuya Kunisato ,  Nobuhiko Hayashi

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/227 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

摘要翻译： 获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。 该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层 以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。 因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。 当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。 第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。

公开(公告)号：US20060011946A1

公开(公告)日：2006-01-19

申请号：US10506100

申请日：2003-02-28

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura ,  Masayuki Shouno ,  Yuuji Hishida ,  Keiichi Yodoshi ,  Daijiro Inoue ,  Takashi Kano ,  Nobuhiko Hayashi

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura ,  Masayuki Shouno ,  Yuuji Hishida ,  Keiichi Yodoshi ,  Daijiro Inoue ,  Takashi Kano ,  Nobuhiko Hayashi

IPC分类号： H01L27/10

CPC分类号： H01S5/32341 ,  H01S5/22 ,  H01S5/2219

摘要： A nitride semiconductor laser element capable of controlling the lateral confinement of light with a good reproducibility, the nitride semiconductor element comprising an n-type cladding layer (3), an MQW light emitting layer (4) formed on the cladding layer (3), a p-type cladding layer (5) and a p-type contact layer (6) formed on the light emitting layer (4), and an ion implantation light absorbing layer (7) formed, by introducing carbon, in regions other than a current passing region (8) in the cladding layer (5) and the contact layer (6).

摘要翻译： 一种氮化物半导体激光元件，其能够以良好的再现性控制光的横向限制，所述氮化物半导体元件包括n型包覆层（3），形成在所述包层（3）上的MQW发光层（4） 形成在发光层（4）上的p型覆盖层（5）和p型接触层（6），以及通过引入碳而形成的离子注入光吸收层（7） 包覆层（5）和接触层（6）中的电流通过区域（8）。

公开(公告)号：US06891871B1

公开(公告)日：2005-05-10

申请号：US09666553

申请日：2000-09-21

申请人： Yasuhiko Nomura ,  Nobuhiko Hayashi ,  Masayuki Hata ,  Masayuki Shono

发明人： Yasuhiko Nomura ,  Nobuhiko Hayashi ,  Masayuki Hata ,  Masayuki Shono

IPC分类号： H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/44 ,  H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01L33/44 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/176 ,  H01S2304/04

摘要： An SiNx film is formed on partial side surfaces and an electrode forming surface excluding an n-side electrode of a first contact layer, the side surfaces of each layer, the upper surface of a second cladding layer and the side surfaces of a ridge portion. An SiOy film is formed on the SiNx film. The SiNx film and the SiOy film form a dielectric film.

摘要翻译： 在部分侧面和除了第一接触层的n侧电极，各层的侧面，第二包覆层的上表面以外的电极形成表面形成SiN＆lt; x＆lt; 脊部的侧面。 在SiN＆lt; x＆gt;膜上形成SiO 2膜。 SiN x膜和SiO 2膜形成电介质膜。

公开(公告)号：US06734503B2

公开(公告)日：2004-05-11

申请号：US10211340

申请日：2002-08-05

申请人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

发明人： Masayuki Hata ,  Nobuhiko Hayashi ,  Koji Tominaga ,  Yasuhiko Nomura ,  Tatsuya Kunisato ,  Hiroki Ohbo

IPC分类号： H01L2701

CPC分类号： H01S5/32341 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/3203 ,  H01S2301/173 ,  H01S2304/12

摘要： A nitride-based semiconductor element capable of effectively preventing a nitride-based semiconductor layer of a first area from cracking and reducing the degree of warpage of a substrate is obtained. This nitride-based semiconductor element comprises a first region formed on a prescribed region of a substrate and provided with an element including a first nitride-based semiconductor layer having a prescribed thickness and a second region formed on a region of the substrate other than the first region and provided with the first nitride-based semiconductor layer with a thickness smaller than the thickness in the first region. Thus, strain easily concentrates to the second region provided with the first nitride-based semiconductor layer with the smaller thickness, whereby strain of the first region provided with the element is relaxed.

摘要翻译： 可以获得能够有效地防止第一区域的氮化物系半导体层破裂并降低基板的翘曲程度的氮化物系半导体元件。 这种氮化物基半导体元件包括形成在基板的规定区域上的第一区域，并且设置有包括具有规定厚度的第一氮化物基半导体层和形成在基板以外的第一区域的第一区域 并且设置有厚度小于第一区域中的厚度的第一氮化物基半导体层。 因此，应变容易地集中到具有较小厚度的设置有第一氮化物基半导体层的第二区域，由此放置元件的第一区域的应变松弛。