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公开(公告)号：US07773654B2
公开(公告)日：2010-08-10
申请号：US11092947
申请日：2005-03-30
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
摘要翻译： 蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。 红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。 红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。 在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。 两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。 这导致第一p电极的一部分被暴露。 蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。
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公开(公告)号：US20080073664A1
公开(公告)日：2008-03-27
申请号：US11976972
申请日：2007-10-30
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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公开(公告)号：US20070292979A1
公开(公告)日：2007-12-20
申请号：US11723449
申请日：2007-03-20
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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公开(公告)号：US20100260227A1
公开(公告)日：2010-10-14
申请号：US12821826
申请日：2010-06-23
IPC分类号： H01S5/40 , H01L21/302 , H01S5/323
CPC分类号： H01S5/02272 , H01L2224/48463 , H01S5/02469 , H01S5/22 , H01S5/4031 , H01S5/4043 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device.
摘要翻译： 蓝紫色半导体激光器件具有形成在其上表面上的p电极和形成在其下表面上的n电极。 在蓝紫色半导体激光器件中，形成p-n结表面，其中p型半导体和n型半导体接合。 红色半导体激光器件具有形成在其上表面上的n电极和形成在其下表面上的p电极。 在红色半导体激光器件中，形成p型半导体和n型半导体的p-n结表面。 红色半导体激光器件的p电极被接合到蓝紫色半导体激光器件的p电极，使得红色半导体激光器件不与蓝紫色的蓝紫色光束发射点重叠 半导体激光器件。
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公开(公告)号：US07589357B2
公开(公告)日：2009-09-15
申请号：US11976972
申请日：2007-10-30
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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公开(公告)号：US07372077B2
公开(公告)日：2008-05-13
申请号：US10766031
申请日：2004-01-29
申请人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
发明人： Masayuki Hata , Tadao Toda , Shigeyuki Okamoto , Daijiro Inoue , Yasuyuki Bessho , Yasuhiko Nomura , Tsutomu Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/0075 , H01L33/0079 , H01L2224/48091 , H01S5/0202 , H01S5/02212 , H01S5/02276 , H01S5/0422 , H01S5/0425 , H01S5/0683 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04 , H01S2304/12 , H01L2924/00014
摘要： A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.
摘要翻译： 提供能够稳定其操作的半导体器件。 该半导体器件包括：衬底，其具有至少部分后表面具有浓集位错的区域，形成在衬底的前表面上的半导体元件层，形成在衬底的背面的区域上的绝缘膜 具有集中位错和形成为与除了具有集中位错的区域以外的基板的背面的区域接触的背面电极。
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公开(公告)号：US20050220159A1
公开(公告)日：2005-10-06
申请号：US11092947
申请日：2005-03-30
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
摘要翻译： 蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。 红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。 红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。 在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。 两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。 这导致第一p电极的一部分被暴露。 蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。
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公开(公告)号：US20050218420A1
公开(公告)日：2005-10-06
申请号：US11076963
申请日：2005-03-11
CPC分类号： H01S5/02272 , H01L2224/48463 , H01S5/02469 , H01S5/22 , H01S5/4031 , H01S5/4043 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a p-electrode formed on the upper surface thereof and an n-electrode formed on the lower surface thereof. In the blue-violet semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. A red semiconductor laser device has an n-electrode formed on the upper surface thereof and a p-electrode formed on the lower surface thereof. In the red semiconductor laser device, a p-n junction surface is formed where a p-type semiconductor and an n-type semiconductor are joined. The p-electrode of the red semiconductor laser device is bonded to the p-electrode of the blue-violet semiconductor laser device such that the red semiconductor laser device does not overlap with a blue-violet-beam-emission point of the blue-violet semiconductor laser device.
摘要翻译： 蓝紫色半导体激光器件具有形成在其上表面上的p电极和形成在其下表面上的n电极。 在蓝紫色半导体激光器件中，形成p-n结表面，其中p型半导体和n型半导体接合。 红色半导体激光器件具有形成在其上表面上的n电极和形成在其下表面上的p电极。 在红色半导体激光器件中，形成p型半导体和n型半导体的p-n结表面。 红色半导体激光器件的p电极被接合到蓝紫色半导体激光器件的p电极，使得红色半导体激光器件不与蓝紫色的蓝紫色光束发射点重叠 半导体激光器件。
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公开(公告)号：US07485902B2
公开(公告)日：2009-02-03
申请号：US10663714
申请日：2003-09-17
IPC分类号： H01L27/15
摘要： A nitride-based semiconductor light-emitting device capable of improving luminous efficiency by reducing light absorption loss in a contact layer is provided. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an active layer, formed on the first nitride-based semiconductor layer, consisting of a nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the active layer, an undoped contact layer formed on the second nitride-based semiconductor layer and an electrode formed on the undoped contact layer.
摘要翻译： 提供了能够通过降低接触层中的光吸收损失而提高发光效率的氮化物系半导体发光元件。 这种氮化物基半导体发光器件包括形成在衬底上的第一导电型第一氮化物基半导体层，形成在第一氮化物基半导体层上的有源层，由氮化物基半导体层，第二 形成在有源层上的导电型第二氮化物基半导体层，形成在第二氮化物基半导体层上的未掺杂的接触层和形成在未掺杂的接触层上的电极。
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10.发明申请Integrated semiconductor laser diode module and manufacturing method of the same 失效集成半导体激光二极管模块及其制造方法相同公开(公告)号：US20050232327A1
公开(公告)日：2005-10-20
申请号：US11067472
申请日：2005-02-28
IPC分类号： H01S5/40 , H01S5/00 , H01S5/02 , H01S5/028 , H01S5/10 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/028 , H01S5/0287 , H01S5/1039 , H01S5/1082 , H01S5/2009 , H01S5/221 , H01S5/222 , H01S5/2231 , H01S5/34326 , H01S5/34333 , H01S5/3436 , H01S5/4043 , H01S5/4087
摘要： Improving the lifetime of an integrated semiconductor laser diode module into which a GaN semiconductor laser diode and a GaP semiconductor laser diode are integrated, and the lasing properties of the laser diodes. Prior to a joining step of an LD 1 wafer that is made of a nitride semiconductor structure formed on a GaN substrate and an LD 2 wafer that is made of an aluminum gallium indium phosphide semiconductor structure, a facet of a resonator of the nitride semiconductor structure is formed by etching A facet of a resonator of the aluminum gallium indium phosphide semiconductor structure is formed, after the joining step, by cleaving. The wafers are joined so that the facets of the resonators of the nitride semiconductor structure and aluminum gallium indium phosphide semiconductor structure are out of alignment in a lengthwise direction of the resonators.
摘要翻译： 整合半导体激光二极管和GaP半导体激光二极管的集成半导体激光二极管模块的寿命提高以及激光二极管的激光特性。 在由GaN衬底上形成的氮化物半导体结构和由铝镓铟磷化物半导体结构制成的LD 2晶片制成的LD 1晶片的接合步骤之前，氮化物半导体结构的谐振器的面 通过蚀刻形成在接合步骤之后通过切割形成铝镓铟磷化物半导体结构的谐振器的一个面。 晶片被接合，使得氮化物半导体结构的谐振器的面和磷化铝镓磷化物半导体结构在谐振器的长度方向上不对准。
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