摘要:
The present invention relates to a method of embedding an additional layer of error correction into an error correcting code, wherein information is encoded into code words of said code over a first Galois field and wherein a number of code words rare arranged in the columns of a code block comprising a user data sub-block and a parity data sub-block In order to provide an additional layer of error correction that can be easily implemented without losing compatibility improving the error correction capabilities, a method is proposed comprising the steps of:—encoding the rows of at least said user data sub-block separately or in groups using a horizontal error correcting code over a second Galois field larger than said first Galois field to obtain horizontal parities,—embedding said horizontal parities as additional layer in said error correcting code.
摘要:
To carry out error correction coding and decoding according to a serially concatenated coded modulation system with a small circuit scale and high performance. A coding apparatus 1 is designed so that an interleaver 20 interleaves order of bits so that all weights are coded by a convolutional coder 30 with respect to data comprising a series of 3 bits supplied from a convolutional coder 10; the convolutional coder 30 makes as small as possible the total value of the hamming distance of input bit between passes to be the minimum Euclidean distance with respect to data of 3 bits supplied from the interleaver 20; and a multi-value modulation mapping circuit 40 causes the hamming distance of input bits in the convolutional coder 30 as the distance between signal point on the I/Q plane is smaller to subject data of 3 bits supplied from the convolutional coder 30 to mapping.
摘要:
The object of the present invention is to provide an aqueous dispersion for chemical mechanical polishing which can be polished working film for semiconductor devices and which is useful for STI. The aqueous dispersion for chemical mechanical polishing of the invention is characterized by comprising an inorganic abrasive such as silica, ceria and the like, and organic particles composed of a resin having anionic group such as carboxyl group into the molecular chains. The removal rate for silicon oxide film is at least 5 times, particularly 10 times the removal rate for silicon nitride film. The aqueous dispersion may also contain an anionic surfactant such as potassium dodecylbenzene sulfonate and the like. And a base may also be included in the aqueous dispersion for adjustment og the pH to further enhance the dispersability, removal rate and selectivity.
摘要:
A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.
摘要:
It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.
摘要:
A device for encoding turbo codes for use in satellite communications. Input data including termination bits are supplied to a series of interleaver circuits. Coding circuits perform convolution operations on data output from the respective interleavers, thereby obtaining coded data. The encoding process automatically results in terminated coded data. Thus, termination circuits are unnecessary. The determination of substitute positions by the respective interleavers through arithmetic computations makes it unnecessary to provide separate memory to store substitute position information.
摘要:
A process for producing modified cross-linked polymer particles which comprises polymerizing 0.01 to 900 parts by weight of (B) a monomer component containing 50% by weight or more of at least one member selected from the group consisting of aromatic monoalkenyl compounds, acrylic acid esters, methacrylic acid esters, fluoroalkyl acrylates, fluoroalkyl methacrylates, unsaturated carboxylic acids, conjugated diene compounds, vinyl esters and organosilane compounds in the presence of 100 parts by weight of (A) cross-linked polymer particles obtained by polymerizing a monomer mixture comprising 50% by weight or more of at least one cross-linking monomer selected from the group consisting of divinylbenzene, ethylene glycol dimethacrylate and trimethylolpropane trimethacrylate.
摘要:
A lost data correction circuit has a multiplication unit MLT having one dividing unit DIV performing division based on the Euclidean mutual division method, 4t (t is the number of symbols for which the error can be corrected and 2t is the number of the parity symbols) number of computation units PE and (8t+2) number of registers A and B provided in parallel. In this circuit, as the first stage, the lost data positions U are calculated from the error flags and the syndromes S are calculated from the received code; and then, as the second stage, the lost data position polynomial u and correction syndrome T are simultaneously calculated in .epsilon. steps (.epsilon. is the number of the lost data symbols); as the third stage, the error evaluation polynomial .omega. and error position polynomial .sigma. and the corrected error position polynomial .sigma. thereof are calculated in (2t-.epsilon.) steps; as the fourth stage, the product polynomial U.multidot.X of them is calculated; and as the fifth stage, the error positions are calculated. That is, in this lost data correction circuit, the total error position polynomial and error evaluation polynomial are calculated in two steps.
摘要:
Disclosed herein are a method of cleaning an oil-deposited material, which comprises cleaning a material having oils deposited on the surface thereof with a cleaning agent comprising 25 to 90% by weight of at least one of compounds selected from the group consisting of pyrrolidones, .gamma.-butyrolactone and N,N-dimethylacetamide, and 10 to 75% by weight of water, then eliminating at least a portion of the deposited cleaning agent from said material to be cleaned by a physical means, and then applying water-washing with water, steam or water and steam; an apparatus for cleaning an oil-deposited materialhaving oils deposited on the surface thereof; and a cleaning agent therefor.