Method and apparatus for embedding an additional layer of error correction into an error correcting code
    81.
    发明申请
    Method and apparatus for embedding an additional layer of error correction into an error correcting code 失效
    用于将错误校正的附加层嵌入纠错码的方法和装置

    公开(公告)号:US20050229085A1

    公开(公告)日:2005-10-13

    申请号:US10509475

    申请日:2003-03-14

    CPC分类号: H03M13/2906 G11B20/1833

    摘要: The present invention relates to a method of embedding an additional layer of error correction into an error correcting code, wherein information is encoded into code words of said code over a first Galois field and wherein a number of code words rare arranged in the columns of a code block comprising a user data sub-block and a parity data sub-block In order to provide an additional layer of error correction that can be easily implemented without losing compatibility improving the error correction capabilities, a method is proposed comprising the steps of:—encoding the rows of at least said user data sub-block separately or in groups using a horizontal error correcting code over a second Galois field larger than said first Galois field to obtain horizontal parities,—embedding said horizontal parities as additional layer in said error correcting code.

    摘要翻译: 本发明涉及一种将错误校正的附加层嵌入到纠错码中的方法,其中信息通过第一伽罗瓦域编码成所述码的码字,并且其中少数排列在 代码块,其包括用户数据子块和奇偶校验数据子块为了提供可以容易地实现的附加的纠错层,而不失去改进纠错能力的兼容性,提出了一种方法,包括以下步骤: 在大于所述第一伽罗瓦域的第二伽罗瓦域上使用水平纠错码,分别地或以组分组编码至少所述用户数据子块的行以获得水平奇偶校验, - 将所述水平奇偶校验作为所述纠错中的附加层 码。

    Aqueous dispersion for chemical mechanical polishing

    公开(公告)号:US06559056B2

    公开(公告)日:2003-05-06

    申请号:US09858924

    申请日:2001-05-17

    IPC分类号: H01L21302

    CPC分类号: H01L21/31053 C09G1/02

    摘要: The object of the present invention is to provide an aqueous dispersion for chemical mechanical polishing which can be polished working film for semiconductor devices and which is useful for STI. The aqueous dispersion for chemical mechanical polishing of the invention is characterized by comprising an inorganic abrasive such as silica, ceria and the like, and organic particles composed of a resin having anionic group such as carboxyl group into the molecular chains. The removal rate for silicon oxide film is at least 5 times, particularly 10 times the removal rate for silicon nitride film. The aqueous dispersion may also contain an anionic surfactant such as potassium dodecylbenzene sulfonate and the like. And a base may also be included in the aqueous dispersion for adjustment og the pH to further enhance the dispersability, removal rate and selectivity.

    Chemical mechanical method of polishing wafer surfaces
    86.
    发明授权
    Chemical mechanical method of polishing wafer surfaces 有权
    抛光晶圆表面的化学机械方法

    公开(公告)号:US06375545B1

    公开(公告)日:2002-04-23

    申请号:US09484252

    申请日:2000-01-18

    IPC分类号: B24B100

    摘要: It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.

    摘要翻译: 本发明的目的是提供一种水分散体和CMP浆料,其可以以足够的速率实现抛光,而不会在晶片工作薄膜的抛光表面中产生划痕,以及用于晶片表面的抛光工艺和制造 半导体器件使用它们。 本发明的CMP浆料等含有交联结构,平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂,并且可以含有不大于0.15重量%的表面活性剂。 另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅,铝等的无机颗粒。 聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。 无机凝结粒子的平均粒径可以为0.1〜1.0μm,并且可以小于聚合物粒子的平均粒径。 将CMP浆料用作抛光剂,并且研磨在晶片上形成的氧化硅膜,铝膜,钨膜或铜膜的工作膜。 并且通过使用CMP浆料制造半导体器件。

    Turbo coding, decoding devices and turbo coding, decoding methods
    87.
    发明授权
    Turbo coding, decoding devices and turbo coding, decoding methods 有权
    Turbo编码,解码设备和turbo编码,解码方式

    公开(公告)号:US06233711B1

    公开(公告)日:2001-05-15

    申请号:US09310161

    申请日:1999-04-30

    IPC分类号: H03M1303

    摘要: A device for encoding turbo codes for use in satellite communications. Input data including termination bits are supplied to a series of interleaver circuits. Coding circuits perform convolution operations on data output from the respective interleavers, thereby obtaining coded data. The encoding process automatically results in terminated coded data. Thus, termination circuits are unnecessary. The determination of substitute positions by the respective interleavers through arithmetic computations makes it unnecessary to provide separate memory to store substitute position information.

    摘要翻译: 用于编码用于卫星通信的turbo码的装置。 包括终止位的输入数据被提供给一系列交织器电路。 编码电路对从各个交织器输出的数据执行卷积运算,从而获得编码数据。 编码过程自动导致终止的编码数据。 因此,终端电路是不必要的。 通过算术计算确定各个交织器的替代位置使得不需要提供单独的存储器来存储替换位置信息。

    Process for producing modified cross-linked polymer particles
    88.
    发明授权
    Process for producing modified cross-linked polymer particles 失效
    制备改性交联聚合物颗粒的方法

    公开(公告)号:US5773519A

    公开(公告)日:1998-06-30

    申请号:US814480

    申请日:1997-03-10

    摘要: A process for producing modified cross-linked polymer particles which comprises polymerizing 0.01 to 900 parts by weight of (B) a monomer component containing 50% by weight or more of at least one member selected from the group consisting of aromatic monoalkenyl compounds, acrylic acid esters, methacrylic acid esters, fluoroalkyl acrylates, fluoroalkyl methacrylates, unsaturated carboxylic acids, conjugated diene compounds, vinyl esters and organosilane compounds in the presence of 100 parts by weight of (A) cross-linked polymer particles obtained by polymerizing a monomer mixture comprising 50% by weight or more of at least one cross-linking monomer selected from the group consisting of divinylbenzene, ethylene glycol dimethacrylate and trimethylolpropane trimethacrylate.

    摘要翻译: 一种制备改性交联聚合物颗粒的方法,其包括将(A)含有50重量%以上的至少一种选自芳香族单烯基化合物,丙烯酸 酯类,甲基丙烯酸酯,氟烷基丙烯酸酯,甲基丙烯酸氟代烷基酯,不饱和羧酸,共轭二烯化合物,乙烯基酯和有机硅烷化合物,在100重量份存在下,(A)通过聚合包含50 至少一种选自二乙烯基苯,乙二醇二甲基丙烯酸酯和三羟甲基丙烷三甲基丙烯酸酯的交联单体的重量%以上。

    Apparatus and methods for correcting lost data
    89.
    发明授权
    Apparatus and methods for correcting lost data 失效
    用于纠正丢失数据的装置和方法

    公开(公告)号:US5566190A

    公开(公告)日:1996-10-15

    申请号:US145201

    申请日:1993-10-27

    申请人: Masayuki Hattori

    发明人: Masayuki Hattori

    IPC分类号: G06F11/10 H03M13/00 H03M13/15

    CPC分类号: H03M13/1535 H03M13/00

    摘要: A lost data correction circuit has a multiplication unit MLT having one dividing unit DIV performing division based on the Euclidean mutual division method, 4t (t is the number of symbols for which the error can be corrected and 2t is the number of the parity symbols) number of computation units PE and (8t+2) number of registers A and B provided in parallel. In this circuit, as the first stage, the lost data positions U are calculated from the error flags and the syndromes S are calculated from the received code; and then, as the second stage, the lost data position polynomial u and correction syndrome T are simultaneously calculated in .epsilon. steps (.epsilon. is the number of the lost data symbols); as the third stage, the error evaluation polynomial .omega. and error position polynomial .sigma. and the corrected error position polynomial .sigma. thereof are calculated in (2t-.epsilon.) steps; as the fourth stage, the product polynomial U.multidot.X of them is calculated; and as the fifth stage, the error positions are calculated. That is, in this lost data correction circuit, the total error position polynomial and error evaluation polynomial are calculated in two steps.

    摘要翻译: 丢失数据校正电路具有乘法单元MLT,其具有基于欧几里德相互分割方法的分割单元DIV,4t(t是可以校正误差的符号数,2t是奇偶校验符号数) 计算单位数量PE和(8t + 2)并行提供的寄存器A和B数量。 在该电路中,作为第一级,从错误标志计算丢失数据位置U,并根据接收到的代码计算综合征S; 然后作为第二阶段,以ε步骤同时计算丢失数据位置多项式u和校正校正子T(ε是丢失的数据符号的数量); 作为第三阶段,在(2t-epsilon)步骤中计算误差评估多项式ω和误差位置多项式σ和校正误差位置多项式+ E,其sigma + EE, 作为第四阶段,计算它们的乘积多项式UxX; 作为第五阶段,计算误差位置。 也就是说,在该丢失数据校正电路中,总错误位置多项式和误差评估多项式分两步计算。