公开(公告)号：USD796528S1

公开(公告)日：2017-09-05

申请号：US29564978

申请日：2016-05-17

Applicant: Samsung Electronics Co., Ltd.

Designer： Heon Woo Lee ,  Miyeon Park ,  Yongman Park ,  Jakyoung Lee ,  Hyerim Kwak ,  Soyoung Lee

公开(公告)号：USD792903S1

公开(公告)日：2017-07-25

申请号：US29562406

申请日：2016-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Miyeon Park ,  Hyerim Kwak ,  Yongman Park ,  Soyoung Lee ,  Jakyoung Lee

公开(公告)号：US09663803B2

公开(公告)日：2017-05-30

申请号：US14541051

申请日：2014-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juyoung Lee ,  Changduk Kang ,  Soyoung Lee ,  Youngkyoung Park ,  Jiyoon Song ,  Seunghyun Lee ,  Kwangmyung Cho

IPC: C12N9/90 ,  C12P7/56 ,  C12N15/81

CPC classification number: C12P7/56 ,  C12N15/81 ,  C12Y503/01001

Abstract: A genetically engineered yeast cell capable of producing lactate having increased TPI activity, a method of preparing the yeast cell, and a method of producing lactate by using the yeast cell.

公开(公告)号：USD777762S1

公开(公告)日：2017-01-31

申请号：US29548762

申请日：2015-12-16

Applicant: Samsung Electronics Co., Ltd.

Designer： Yongman Park ,  Soyoung Lee ,  Jakyoung Lee

公开(公告)号：USD769295S1

公开(公告)日：2016-10-18

申请号：US29532732

申请日：2015-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Ahreum Han ,  Yongman Park ,  Soyoung Lee ,  Yoonsun Cho

公开(公告)号：USD768177S1

公开(公告)日：2016-10-04

申请号：US29532720

申请日：2015-07-09

Applicant: Samsung Electronics Co., Ltd.

Designer： Ahreum Han ,  Yongman Park ,  Soyoung Lee ,  Yoonsun Cho

公开(公告)号：US09076849B2

公开(公告)日：2015-07-07

申请号：US14094963

申请日：2013-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Ho An ,  Byung-Lyul Park ,  Soyoung Lee ,  Gilheyun Choi

IPC: H01L21/44 ,  H01L21/768

CPC classification number: H01L23/5384 ,  H01L21/76877 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/09 ,  H01L2224/0401 ,  H01L2224/08146 ,  H01L2224/13 ,  H01L2224/16145 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00

Abstract: Semiconductor devices, and methods of fabricating a semiconductor device, include forming a via hole through a first surface of a substrate, the via hole being spaced apart from a second surface facing the first surface, forming a first conductive pattern in the via hole, forming an insulating pad layer on the first surface of the substrate, the insulating pad having an opening exposing the first conductive pattern, performing a thermal treatment on the first conductive pattern to form a protrusion protruding from a top surface of the first conductive pattern toward the opening, and then, forming a second conductive pattern in the opening.

Abstract translation: 半导体器件以及制造半导体器件的方法包括：通过基板的第一表面形成通孔，所述通孔与面向第一表面的第二表面间隔开，在通孔中形成第一导电图案，形成 在所述基板的第一表面上的绝缘垫层，所述绝缘垫具有暴露所述第一导电图案的开口，对所述第一导电图案进行热处理，以形成从所述第一导电图案的顶表面朝向所述开口突出的突起 ，然后在开口中形成第二导电图案。

公开(公告)号：US11959170B2

公开(公告)日：2024-04-16

申请号：US17333820

申请日：2021-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung Lee ,  Hyunjae Lee ,  Ik Soo Kim ,  Jang-Hee Lee

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  B01B1/00 ,  C23C14/24

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/4483 ,  H01L21/02175 ,  H01L21/0228 ,  B01B1/005 ,  C23C14/243 ,  C23C16/4485 ,  C23C16/45561

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

公开(公告)号：US11770967B2

公开(公告)日：2023-09-26

申请号：US17120768

申请日：2020-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeyoung Shin ,  Moohyun Baek ,  Youngsoo Chun ,  Seungmin Choi ,  Byounguk Yoon ,  Soyoung Lee

IPC: G06F1/16 ,  H10K77/10 ,  G06F3/041 ,  H04M1/02 ,  G06F3/0488 ,  H10K50/84 ,  H10K59/12 ,  H10K59/40 ,  H10K59/65 ,  H10K102/00

CPC classification number: H10K77/111 ,  G06F1/1601 ,  G06F3/041 ,  G06F3/0488 ,  H04M1/0235 ,  H04M1/0245 ,  H04M1/0268 ,  H10K50/841 ,  H10K59/12 ,  H10K59/40 ,  H10K59/65 ,  G06F1/163 ,  G06F1/1652 ,  G06F2203/04102 ,  G09G2354/00 ,  H10K2102/311

Abstract: An electronic device is provided. The electronic device includes a flexible touchscreen layer movable between an open state and a closed state and having a periphery located at a first distance from a first sidewall in the closed state, and located at a second distance longer than the first distance from the first sidewall in the open state. When the flexible touchscreen layer is moved from the open state to the closed state, at least part of the bendable portion may be led out from a recess to construct substantially a plane. When the flexible touchscreen layer is moved from the closed state to the open state, at least part of the bendable portion may be led into the recess to expose at least one of an inner structure having various modules disposed thereon or electronic component for access and/or use.

公开(公告)号：US20230215723A1

公开(公告)日：2023-07-06

申请号：US18147733

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNHYEA KO ,  Hoon Han ,  Soyoung Lee ,  Thanh Cuong Nguyen ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Daekeon Kim ,  Younjoung Cho ,  Jiyu Choi ,  Byungkeun Hwang

IPC: H01L21/02 ,  C23C16/455 ,  C23C2/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01L21/02323 ,  H01L21/0226 ,  C23C16/45525 ,  C23C2/026 ,  H01L21/31116

Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an α-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.