公开(公告)号：US11862616B2

公开(公告)日：2024-01-02

申请号：US17178897

申请日：2021-02-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Dae Sung Cho ,  So Ra Lee

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38 ,  H01L33/32 ,  H01L23/00

CPC classification number: H01L25/0756 ,  H01L25/0753 ,  H01L33/0093 ,  H01L33/382 ,  H01L33/62 ,  H01L24/32 ,  H01L33/32 ,  H01L2224/32145 ,  H01L2924/12041 ,  H01L2933/0016

Abstract: A light emitting device includes a short wavelength light emitting portion, a long wavelength light emitting portion, and a coupling layer combining the short wavelength emitting portion and the long wavelength light emitting portion. Each of the short wavelength light emitting portion and the long wavelength light emitting portion includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer of the long wavelength light emitting portion contains more Indium (In) than the active layer of the short wavelength light emitting portion, and the short wavelength light emitting portion emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting portion.

公开(公告)号：US11804573B2

公开(公告)日：2023-10-31

申请号：US17119139

申请日：2020-12-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Toshiya Yokogawa ,  Chae Hon Kim ,  Chung Hoon Lee

IPC: H01L33/32 ,  H01L33/40 ,  H01L33/60 ,  H01L33/38

CPC classification number: H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/60

Abstract: A group III-V light-emitting diode is provided. The light-emitting diode includes a light generating portion including an active layer interposed between a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The active layer generates light. The light-emitting diode further includes an optical trap disposed on an optical path of light generated from the active layer. The optical trap includes a light absorption layer interposed between light guide layers. The light-emitting diode further includes a side reflector disposed on a side surface of the optical trap.

公开(公告)号：US11749708B2

公开(公告)日：2023-09-05

申请号：US17134985

申请日：2020-12-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  So Ra Lee

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/10 ,  H01L33/38 ,  H01L33/08

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/10 ,  H01L33/382 ,  H01L33/62

Abstract: A display apparatus includes a display substrate, and light emitting devices arranged on an upper surface of the display substrate. At least one of the light emitting devices includes a first LED unit including a first light emitting stack, a second LED unit including a second light emitting stack, and a third LED unit including a third light emitting stack. Each of the first to third light emitting stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. the first conductivity type semiconductor layer and the second conductivity type semiconductor layer in each of the first to third light emitting stacks are stacked in a horizontal direction with respect to the upper surface of the display substrate. At least one of the second conductivity type semiconductor layers in the first to third light emitting stacks is divided into two regions.

公开(公告)号：US11641008B2

公开(公告)日：2023-05-02

申请号：US16646537

申请日：2018-09-27

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Sung Su Son ,  Jong Ik Lee ,  Jae Hee Lim ,  Motonobu Takeya ,  Seung Sik Hong

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/62

Abstract: A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.

公开(公告)号：US11563052B2

公开(公告)日：2023-01-24

申请号：US17366420

申请日：2021-07-02

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon Chae ,  Chung Hoon Lee ,  Seong Gyu Jang ,  Chang Yeon Kim ,  Ho Joon Lee

IPC: H01L27/15 ,  H01L27/12 ,  H01L27/32 ,  H01L25/07 ,  H01L25/16 ,  H01L33/10 ,  H01L33/30 ,  H01L33/40 ,  H01L33/50 ,  H01L33/60 ,  H01L33/38 ,  H01L33/00 ,  H01L33/08 ,  H01L33/42 ,  H01L33/46 ,  H01L33/58 ,  H01L33/22 ,  H01L33/24 ,  H01L25/075 ,  G09G3/32 ,  H01L29/45

Abstract: A light emitting diode (LED) pixel for a display including a substrate, a first LED stack disposed on the substrate, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and through-hole vias formed through the substrate, in which each of the first, second, and third LED stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, and each of the through-hole vias is electrically connected to at least one of the first, second, and third LED stacks.

公开(公告)号：US11522006B2

公开(公告)日：2022-12-06

申请号：US16228621

申请日：2018-12-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Jong Hyeon Chae ,  Seong Gyu Jang ,  Ho Joon Lee

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/40 ,  H01L33/30 ,  G09G3/20 ,  G09G3/32 ,  H01L25/075 ,  H01L25/16

Abstract: A light emitting stacked structure including a plurality of epitaxial sub-units disposed one over another, each of the epitaxial sub-units configured to emit different colored light, in which each epitaxial sub-unit has a light emitting area that overlaps one another, and at least one epitaxial sub-unit has an area different from the area of another epitaxial sub-unit.

公开(公告)号：US20220285433A1

公开(公告)日：2022-09-08

申请号：US17826127

申请日：2022-05-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Jong Hyeon Chae ,  Seong Gyu Jang ,  Ho Joon Lee

IPC: H01L27/15 ,  G09G3/32 ,  G09G3/20 ,  H01L33/50 ,  H01L33/40 ,  H01L33/30 ,  H01L25/075

Abstract: A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a first portion of the first LED sub-unit, and a third LED sub-unit disposed on a second portion of the second LED sub-unit, in which each of the first, second, and third LED sub-units includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, light generated from the first LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a third portion of the first LED sub-unit different from the first portion, and light generated from the second LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a fourth portion of the second LED sub-unit different from the second portion.

公开(公告)号：US11282981B2

公开(公告)日：2022-03-22

申请号：US16198784

申请日：2018-11-22

Applicant: Seoul Viosys Co., Ltd.

Inventor： Chang Yeon Kim ,  Jong Hyeon Chae ,  Chung Hoon Lee ,  Seong Gyu Jang ,  Jong Min Jang ,  Ho Joon Lee

IPC: H01L33/08 ,  H01L25/07 ,  H01L27/32 ,  H01L33/38 ,  H01L33/24 ,  H01L33/42 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L33/32 ,  H01L33/00 ,  H01L25/075 ,  H01L25/065 ,  H01L25/04

Abstract: A light emitting diode pixel for a display including a substrate, a first LED sub-unit disposed on the substrate, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on at least one of the first and second LED sub-units, and vias formed in the substrate, in which each of the first to third LED sub-units comprises a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, and each of the vias is electrically connected to at least one of the first, second, and third LED sub-units.

公开(公告)号：US20210335886A1

公开(公告)日：2021-10-28

申请号：US17366420

申请日：2021-07-02

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Chung Hoon Lee ,  Seong Gyu Jang ,  Chang Yeon Kim ,  Ho Joon Lee

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/10 ,  H01L33/30 ,  H01L33/40 ,  H01L33/50

Abstract: A light emitting diode (LED) pixel for a display including a substrate, a first LED stack disposed on the substrate, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, and through-hole vias formed through the substrate, in which each of the first, second, and third LED stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, and each of the through-hole vias is electrically connected to at least one of the first, second, and third LED stacks.

公开(公告)号：US11114499B2

公开(公告)日：2021-09-07

申请号：US16236737

申请日：2018-12-31

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Jong Hyeon Chae

IPC: H01L27/15 ,  H01L33/30 ,  H01L33/08 ,  H01L33/62 ,  H01L33/40 ,  H01L25/075 ,  G09G3/32 ,  H01L33/22

Abstract: A display device includes a plurality of pixel tiles spaced apart from each other, each of the pixel tiles including a substrate and a plurality of light emitting stacked structures disposed on the substrate, in which a distance between two adjacent light emitting stacked structures in the same pixel tile is substantially equal to a shortest distance between two adjacent light emitting stacked structures of different pixel tiles.