公开(公告)号：US11611021B2

公开(公告)日：2023-03-21

申请号：US16646537

申请日：2018-09-27

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Sung Su Son ,  Jong Ik Lee ,  Jae Hee Lim ,  Motonobu Takeya ,  Seung Sik Hong

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/62

Abstract: A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.

公开(公告)号：US09997669B2

公开(公告)日：2018-06-12

申请号：US14820509

申请日：2015-08-06

Applicant: Seoul Viosys Co., Ltd. ,  Seoul Semiconductor Co., Ltd.

Inventor： Chang Ik Im ,  Motonobu Takeya ,  Chung Hoon Lee ,  Michael Lim

IPC: H01L33/00 ,  H01L33/18 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/38 ,  H01L33/40 ,  H01L33/60 ,  H01L33/54 ,  H01L33/62 ,  H01L33/64

CPC classification number: H01L33/18 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed herein are a light emitting device and a method of making the same. The light emitting device includes: a substrate including a first lead and a second lead; a light emitting diode disposed over the first lead of the substrate, including a second conductive-type semiconductor layer, an active layer, and a first conductive-type semiconductor layer, and emit near ultraviolet light; and a wavelength conversion unit disposed over the light emitting diode and spaced apart from the light emitting diode, wherein the light emitting structure has semi-polar or non-polar characteristics, the wavelength conversion unit has a multi-layered structure including a first phosphor layer and a second phosphor layer, and the light emitting diode is driven at a current density which is equal to or greater than 350 mA/mm2.

公开(公告)号：US11824145B2

公开(公告)日：2023-11-21

申请号：US17509050

申请日：2021-10-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Sung Su Son ,  Jong Ik Lee ,  Jae Hee Lim ,  Motonobu Takeya ,  Seung Sik Hong

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L33/504 ,  H01L25/0753 ,  H01L33/62

Abstract: A display apparatus including a substrate, a first sub-pixel, a second sub-pixel, and a third sub-pixel disposed on the substrate and configured to emit red light, green light, and blue light, respectively, partition walls disposed between the first sub-pixel, the second sub-pixel, and the third sub-pixel, and configured to not transmit light, in which the first sub-pixel, the second sub-pixel, and the third sub-pixel include a first light emitting cell, a second light emitting cell, and a third light emitting cell, respectively, and a height of each of the first, second, and third light emitting cells is lower than a height of the partition walls, and a difference between the height of the partition walls and the height of each of the first, second, and third light emitting cells is less than 100 μm.

公开(公告)号：US11641008B2

公开(公告)日：2023-05-02

申请号：US16646537

申请日：2018-09-27

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chung Hoon Lee ,  Sung Su Son ,  Jong Ik Lee ,  Jae Hee Lim ,  Motonobu Takeya ,  Seung Sik Hong

IPC: H01L33/50 ,  H01L25/075 ,  H01L33/62

Abstract: A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.

公开(公告)号：US20160043276A1

公开(公告)日：2016-02-11

申请号：US14820509

申请日：2015-08-06

Applicant: Seoul Viosys Co., Ltd. ,  Seoul Semiconductor Co., Ltd.

Inventor： Chang Ik Im ,  Motonobu Takeya ,  Chung Hoon Lee ,  Michael Lim

IPC: H01L33/18 ,  H01L33/06 ,  H01L33/32 ,  H01L33/50 ,  H01L33/64 ,  H01L33/40 ,  H01L33/60 ,  H01L33/54 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/18 ,  H01L33/0025 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Disclosed herein are a light emitting device and a method of making the same. The light emitting device includes: a substrate including a first lead and a second lead; a light emitting diode disposed over the first lead of the substrate, including a second conductive-type semiconductor layer, an active layer, and a first conductive-type semiconductor layer, and emit near ultraviolet light; and a wavelength conversion unit disposed over the light emitting diode and spaced apart from the light emitting diode, wherein the light emitting structure has semi-polar or non-polar characteristics, the wavelength conversion unit has a multi-layered structure including a first phosphor layer and a second phosphor layer, and the light emitting diode is driven at a current density which is equal to or greater than 350 mA/mm2.

Abstract translation: 本文公开了发光器件及其制造方法。 发光器件包括：包括第一引线和第二引线的衬底; 设置在所述基板的所述第一引线上的发光二极管，包括第二导电型半导体层，有源层和第一导电型半导体层，并且发射近紫外光; 以及布置在所述发光二极管上并与所述发光二极管间隔开的波长转换单元，其中所述发光结构具有半极性或非极性特性，所述波长转换单元具有多层结构，所述多层结构包括第一荧光体层 和第二荧光体层，并且以等于或大于350mA / mm 2的电流密度驱动发光二极管。