公开(公告)号：US10326025B2

公开(公告)日：2019-06-18

申请号：US14567309

申请日：2014-12-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC: H01L29/786 ,  H01L27/12

Abstract: To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes.

公开(公告)号：US10269978B2

公开(公告)日：2019-04-23

申请号：US15910395

申请日：2018-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/423 ,  G02F1/1368 ,  G02F1/167

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

公开(公告)号：US10158005B2

公开(公告)日：2018-12-18

申请号：US14095189

申请日：2013-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Shunpei Yamazaki

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12

Abstract: An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability. A gate insulating film provided over a substrate having an insulating surface, a source and a drain electrode which are provided over the gate insulating film, a first oxide semiconductor layer provided over the source electrode and the drain electrode, and a source and a drain region which are provided between the source electrode and the drain electrode and the first oxide semiconductor layer are provided. A barrier film is provided in contact with the first oxide semiconductor layer.

公开(公告)号：US10032796B2

公开(公告)日：2018-07-24

申请号：US15063737

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Rihito Wada ,  Yoko Chiba

IPC: H01L29/12 ,  H01L27/12 ,  G02F1/1345 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24 ,  G02F1/1339 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1225 ,  G02F1/13392 ,  G02F1/13458 ,  G02F2001/13398 ,  G09G2300/0804 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/5221

Abstract: A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.

公开(公告)号：US09978776B2

公开(公告)日：2018-05-22

申请号：US15090925

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Atsushi Umezaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78606 ,  H01L29/7869

Abstract: A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.

公开(公告)号：US09915843B2

公开(公告)日：2018-03-13

申请号：US15623838

申请日：2017-06-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: G02F1/1362 ,  H01L27/02 ,  H01L27/12 ,  H01L33/00

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

公开(公告)号：US09859441B2

公开(公告)日：2018-01-02

申请号：US15229363

申请日：2016-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC: H01L29/49 ,  H01L29/786 ,  H01L27/01 ,  H01L27/15 ,  H01L27/32 ,  H01L29/66 ,  H01L27/12 ,  H01L29/45 ,  H01L29/51 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/016 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/15 ,  H01L27/3225 ,  H01L27/3241 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78618

Abstract: In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

公开(公告)号：US09847355B2

公开(公告)日：2017-12-19

申请号：US14515770

申请日：2014-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L29/04 ,  H01L31/036 ,  H01L27/12 ,  B32B17/04 ,  B32B17/06 ,  C23C14/06 ,  C23C14/58 ,  H01L27/32 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L27/13

CPC classification number: H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

Abstract: An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

公开(公告)号：US09703157B2

公开(公告)日：2017-07-11

申请号：US14837599

申请日：2015-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: G02F1/1362 ,  H01L27/02 ,  H01L27/12 ,  H01L33/00

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

公开(公告)号：US09679918B2

公开(公告)日：2017-06-13

申请号：US14515770

申请日：2014-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toru Takayama ,  Shunpei Yamazaki ,  Kengo Akimoto

IPC: H01L29/04 ,  H01L31/036 ,  H01L27/12 ,  H01L27/32 ,  B32B17/04 ,  B32B17/06 ,  C23C14/06 ,  C23C14/58 ,  H01L21/314 ,  H01L21/318 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51 ,  H01L27/13

Abstract: An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.