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    Method of manufacturing a thin film transistor using multiple sputtering chambers
    82.
    发明授权
    Method of manufacturing a thin film transistor using multiple sputtering chambers 失效
    使用多个溅射室制造薄膜晶体管的方法

    公开(公告)号：US06177302B1

    公开(公告)日：2001-01-23

    申请号：US08310364

    申请日：1994-09-22

    申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

    发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

    IPC分类号： H01L2184

    CPC分类号： H01L29/66757 ,  C23C14/568 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02661 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908

    摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

    摘要翻译： 描述制造薄膜场效应晶体管的方法。 通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。 栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。 用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。 另一方面，通过溅射在包含氧的气​​氛中沉积栅极绝缘氧化物膜。

    Method of manufacturing gate insulated field effect transistors
    86.
    发明授权
    Method of manufacturing gate insulated field effect transistors 失效
    栅极绝缘场效应晶体管的制造方法

    公开(公告)号：US06261877B1

    公开(公告)日：2001-07-17

    申请号：US08677331

    申请日：1996-07-02

    申请人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

    发明人： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

    IPC分类号： H01L2184

    CPC分类号： H01L29/66757 ,  C23C14/568 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02661 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908

    摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

    摘要翻译： 描述制造薄膜场效应晶体管的方法。 通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。 栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。 用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。 另一方面，通过溅射在包含氧的气​​氛中沉积栅极绝缘氧化物膜。

    Thin film semiconductor device
    87.
    发明授权
    Thin film semiconductor device 失效
    薄膜半导体器件

    公开(公告)号：US06204519B1

    公开(公告)日：2001-03-20

    申请号：US08813541

    申请日：1997-03-07

    申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Takeshi Fukada

    发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Takeshi Fukada

    IPC分类号： H01L2904

    CPC分类号： H01L27/1222 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696 ,  Y10S438/908

    摘要： A thin film semiconductor device comprising a substrate having an insulating surface, gate electrodes disposed on the insulating surface, gate insulating films disposed on upper portions of the gate electrodes, and thin film semiconductors disposed on the gate insulating films and including channel forming regions, source regions and drain regions. Two kinds of thin film semiconductor unit are disposed on the substrate. A first thin film semiconductor unit includes the thin film semiconductor of polycrystal, an insulating film covering an upper portion of the channel forming region, impurity semiconductor films doped with trivalent or pentavalent impurities and covering the source region and the drain region, and conductive films disposed on the impurity semiconductor films. A second thin film semiconductor unit includes the thin film semiconductor of amorphous, and other components similar to the first thin film semiconductor unit.

    摘要翻译： 一种薄膜半导体器件，包括具有绝缘表面的衬底，设置在绝缘表面上的栅极电极，设置在栅极电极的上部的栅极绝缘膜，以及设置在栅极绝缘膜上并且包括沟道形成区域的源极 区域和排水区域。 两种薄膜半导体单元设置在基板上。 第一薄膜半导体单元包括多晶薄膜半导体，覆盖沟道形成区的上部的绝缘膜，掺杂有三价或五价杂质的杂质半导体膜，并覆盖源极区和漏极区，以及设置导电膜 在杂质半导体膜上。 第二薄膜半导体单元包括非晶体的薄膜半导体和类似于第一薄膜半导体单元的其它部件。

    Semiconductor device and manufacturing method thereof
    88.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US6163055A

    公开(公告)日：2000-12-19

    申请号：US46198

    申请日：1998-03-23

    申请人： Yoshiharu Hirakata ,  Takeshi Fukada ,  Shunpei Yamazaki

    发明人： Yoshiharu Hirakata ,  Takeshi Fukada ,  Shunpei Yamazaki

    IPC分类号： H01L29/786 ,  G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L31/0312 ,  H01L23/58 ,  H01L27/01

    CPC分类号： G02F1/136227 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An interlayer insulating film (104) that is formed on a substrate (101) so as to cover TFTs (102, 103) is planarized by mechanical polishing that is typified by CMP. Pixel electrodes (106, 107) are formed on the interlayer insulating film (104) and an insulating layer (108) is formed so as to cover the pixel electrodes. The insulating layer (108) is planarized by second mechanical polishing so that the surfaces of the pixel electrodes become flush with those of resulting buried insulating layers (112, 113). Since the pixel electrode surfaces have no steps, such problems as alignment failures of a liquid crystal material and a contrast reduction due to diffused reflection of light can be prevented.

    摘要翻译： 通过以CMP为代表的机械抛光来平坦化形成在基板（101）上以覆盖TFT（102,103）的层间绝缘膜（104）。 在层间绝缘膜（104）上形成像素电极（106,107），并且形成绝缘层（108）以覆盖像素电极。 绝缘层108通过第二机械抛光被平坦化，使得像素电极的表面与所得到的掩埋绝缘层（112,113）的表面齐平。 由于像素电极表面没有步骤，所以可以防止由于液晶材料的对准失败以及由于光的漫反射导致的对比度降低等问题。