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公开(公告)号：US06617645B2
公开(公告)日：2003-09-09
申请号：US09730417
申请日：2000-12-04
IPC分类号： H01L2701
CPC分类号： G02F1/136227 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L2924/0002 , H01L2924/00
摘要： An interlayer insulating film (104) that is formed on a substrate(101) so as to cover TFTs(102, 103) is planarized by mechanical polishing that is typified by CMP. Pixel electrodes (106, 107) are formed on the interlayer insulating film(104) and an insulating layer(108) is formed so as to cover the pixel electrodes. The insulating layer(108) is planarized by second mechanical polishing so that the surfaces of the pixel electrodes become flush with those of resulting buried insulating layers(112, 113). Since the pixel electrode surfaces have no steps, such problems as alignment failures of a liquid crystal material and a contrast reduction due to diffused reflection of light can be prevented.
摘要翻译： 通过以CMP为代表的机械抛光来平坦化形成在基板（101）上以覆盖TFT（102,103）的层间绝缘膜（104）。 在层间绝缘膜（104）上形成像素电极（106,107），并且形成绝缘层（108）以覆盖像素电极。 绝缘层108通过第二机械抛光被平坦化，使得像素电极的表面与所得到的掩埋绝缘层（112,113）的表面齐平。 由于像素电极表面没有步骤，所以可以防止由于液晶材料的对准失败以及由于光的漫反射导致的对比度降低等问题。
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公开(公告)号：US6163055A
公开(公告)日：2000-12-19
申请号：US46198
申请日：1998-03-23
IPC分类号： H01L29/786 , G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , H01L31/0312 , H01L23/58 , H01L27/01
CPC分类号： G02F1/136227 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L2924/0002 , H01L2924/00
摘要： An interlayer insulating film (104) that is formed on a substrate (101) so as to cover TFTs (102, 103) is planarized by mechanical polishing that is typified by CMP. Pixel electrodes (106, 107) are formed on the interlayer insulating film (104) and an insulating layer (108) is formed so as to cover the pixel electrodes. The insulating layer (108) is planarized by second mechanical polishing so that the surfaces of the pixel electrodes become flush with those of resulting buried insulating layers (112, 113). Since the pixel electrode surfaces have no steps, such problems as alignment failures of a liquid crystal material and a contrast reduction due to diffused reflection of light can be prevented.
摘要翻译： 通过以CMP为代表的机械抛光来平坦化形成在基板（101）上以覆盖TFT（102,103）的层间绝缘膜（104）。 在层间绝缘膜（104）上形成像素电极（106,107），并且形成绝缘层（108）以覆盖像素电极。 绝缘层108通过第二机械抛光被平坦化，使得像素电极的表面与所得到的掩埋绝缘层（112,113）的表面齐平。 由于像素电极表面没有步骤，所以可以防止由于液晶材料的对准失败以及由于光的漫反射导致的对比度降低等问题。
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公开(公告)号：US06812082B2
公开(公告)日：2004-11-02
申请号：US10656170
申请日：2003-09-08
IPC分类号： H01L21336
CPC分类号： G02F1/136227 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L2924/0002 , H01L2924/00
摘要： An interlayer insulating film (104) that is formed on a substrate (101) so as to cover TFTs (102, 103) is planarized by mechanical polishing that is typified by CMP. Pixel electrodes (106, 107) are formed on the interlayer insulating film (104) and an insulating layer (108) is formed so as to cover the pixel electrodes. The insulating layer (108) is planarized by second mechanical polishing so that the surfaces of the pixel electrodes become flush with those of resulting buried insulating layers (112, 113). Since the pixel electrode surfaces have no steps, such problems as alignment failures of a liquid crystal material and a contrast reduction due to diffused reflection of light can be prevented.
摘要翻译： 通过以CMP为代表的机械抛光来平坦化形成在基板（101）上以覆盖TFT（102,103）的层间绝缘膜（104）。 在层间绝缘膜（104）上形成像素电极（106,107），并且形成绝缘层（108）以覆盖像素电极。 绝缘层108通过第二机械抛光被平坦化，使得像素电极的表面与所得到的掩埋绝缘层（112,113）的表面齐平。 由于像素电极表面没有步骤，所以可以防止由于液晶材料的对准失败以及由于光的漫反射导致的对比度降低等问题。
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公开(公告)号：US06977192B2
公开(公告)日：2005-12-20
申请号：US10254142
申请日：2002-09-24
IPC分类号： G02F1/1368 , H01L21/336 , H01L21/77 , H01L29/786 , H01L21/00
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： In manufacturing a thin film semiconductor device, a gate electrode forming step, a gate insulating film forming step, an amorphous semiconductor film forming step, a crystalline semiconductor film forming step, and an insulating film forming step are performed continuously without breaking vacuum.
摘要翻译： 在制造薄膜半导体器件中，连续地连续地进行栅极形成步骤，栅极绝缘膜形成步骤，非晶半导体膜形成步骤，结晶半导体膜形成步骤和绝缘膜形成步骤。
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5.发明授权APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical 失效使用有机硅烷，氧化剂和催化剂形成的氢根形成氧化硅的APCVD方法公开(公告)号：US06323142B1
公开(公告)日：2001-11-27
申请号：US08706666
申请日：1996-09-06
IPC分类号： H01L2100
CPC分类号： H01L21/02126 , C03C17/245 , C03C2218/1525 , C03C2218/153 , C23C16/402 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属得到改善。
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公开(公告)号：US5861103A
公开(公告)日：1999-01-19
申请号：US687968
申请日：1996-07-29
申请人： Shunpei Yamazaki , Takeshi Fukada , Hideomi Suzawa
发明人： Shunpei Yamazaki , Takeshi Fukada , Hideomi Suzawa
IPC分类号： C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32082 , H01L21/31116 , H01J2237/3341 , H01L21/00
摘要： Each of a pair of electrodes is provided in high-frequency power supply. A sample placed on the one of electrodes is etched by RIE (reactive ion etching) method. At the time, the power supply connected to the other electrode opposite to the sample is actuated first, and then the power supply of the one electrode on which the sample has been placed is actuated. And then the power supply connected to the other electrode is stopped. Therefore a bias voltage applied to the sample is gradually varied to suppress the abrupt application of a voltage to the sample.
摘要翻译： 一对电极中的每一个设置在高频电源中。 通过RIE（反应离子蚀刻）方法蚀刻放置在电极之一上的样品。 此时，首先启动与样品相对的另一电极连接的电源，然后致动其上放置样品的一个电极的电源。 然后连接到另一个电极的电源停止。 因此，施加到样品的偏置电压逐渐变化，以抑制对样品的电压的突然施加。
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公开(公告)号：US4936251A
公开(公告)日：1990-06-26
申请号：US725596
申请日：1985-04-22
IPC分类号： C23C16/458 , C23C16/54
CPC分类号： C23C16/4587 , C23C16/54
摘要： A vapor phase reaction apparatus includes a reaction chamber defined by first and second walls fixed opposite each other. Third and fourth walls are introduced into the reaction chamber already having affixed to them a substrate for deposition. A reactive gas is introduced into the reaction chamber for chemical vapor deposition onto the substrate.
摘要翻译： 气相反应装置包括由彼此相对固定的第一和第二壁限定的反应室。 将第三和第四壁引入反应室中，已经固定在其上用于沉积的基底。 反应气体被引入到反应室中用于化学气相沉积到基底上。
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公开(公告)号：US4888305A
公开(公告)日：1989-12-19
申请号：US320788
申请日：1989-03-09
申请人： Shunpei Yamazaki , Kunio Suzuki , Susumu Nagayama , Takashi Inujima , Masayoshi Abe , Takeshi Fukada , Mikio Kinka , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Kaoru Koyanagi
发明人： Shunpei Yamazaki , Kunio Suzuki , Susumu Nagayama , Takashi Inujima , Masayoshi Abe , Takeshi Fukada , Mikio Kinka , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Kaoru Koyanagi
CPC分类号： H01L31/208 , H01L21/3003 , Y02E10/50 , Y02P70/521 , Y10S148/004 , Y10S148/024
摘要： An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
摘要翻译： 公开了一种改进的半导体处理。 在制造过程中，刚刚形成的半导体层经历光退火，潜在的悬挂键出现在表面和间隙上，然后将中和剂引入半导体的氛围。 这样形成的半导体表现出SEL效应代替Staebler-Wronski效应。
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公开(公告)号：US07507615B2
公开(公告)日：2009-03-24
申请号：US10401891
申请日：2003-03-31
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , C23C14/568 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02631 , H01L21/02661 , Y10S438/906 , Y10S438/907 , Y10S438/908
摘要： A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.
摘要翻译： 描述制造薄膜场效应晶体管的方法。 通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。 栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。 用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。 另一方面，通过溅射在包含氧的气氛中沉积栅极绝缘氧化物膜。
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10.发明授权APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical 失效使用有机硅烷，氧化剂和催化剂形成的氢根形成氧化硅的APCVD方法公开(公告)号：US07491659B2
公开(公告)日：2009-02-17
申请号：US10737855
申请日：2003-12-18
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C03C17/245 , C03C2218/1525 , C03C2218/153 , C23C16/402 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属得到改善。
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