公开(公告)号：US4469685A

公开(公告)日：1984-09-04

申请号：US491844

申请日：1983-05-05

申请人： Yasuhiko Kojima ,  Seishi Konno ,  Sadao Tamamura ,  Takashi Hashimoto

发明人： Yasuhiko Kojima ,  Seishi Konno ,  Sadao Tamamura ,  Takashi Hashimoto

IPC分类号： A61K36/00 ,  A61K36/233 ,  A61K36/489 ,  A61K36/754 ,  A61K36/8888 ,  A61K36/8965 ,  A61K35/78

CPC分类号： A61K36/00 ,  A61K36/233 ,  A61K36/489 ,  A61K36/754 ,  A61K36/8888 ,  A61K36/8965

摘要： A process for producing interferon inducers from the plants, comprising extracting a water-soluble interferon inducer with water from the tissue of a plant selected from the genera Atractylodes, Lonicera, Plantago, Lithospermum, Ligusticum, Cnidium, Bupleurum, Notopeterygium, Heracleum, Aralia, Panax, Polygala, Sophora, Euchresta, Astragalus, Sinomenium, Stephania, Cocculus, Cimicifuga, Rheum, Gastroida, Asparagus, Pinellia, Evoida and variants thereof capable of producing said interferon inducer at a temperature of from ambient to the boiling point of the extraction mixture for a period sufficient to extract the major portion of said interferon inducer present in the plant tissue, forming a supernatant, fractionating the supernatant to yield fractions containing the major portion of said interferon inducer in the supernatant and recovering said interferon inducer therefrom. Preferably, the fractionation may be effected by ultrafiltration. The interferon inducers thus obtained have a molecular weight of from about 30,000 to about 3,000,000 and are of potential interest for preventing and treating various diseases of humans and animals caused by viral infection.

摘要翻译： 一种从植物中产生干扰素诱导物的方法，包括用水从植物组织中提取水溶性干扰素诱导物，所述植物选自白术，金银花，车前子，紫草，Ligusticum，Cnidium，柴胡，Notopetellgium，Heracleum，Aralia， 番茄，Polygala，Sophora，Euchresta，黄芪，Sinomenium，Stephania，Cocculus，Cimicifuga，Rheum，Gastroida，芦笋，Pinellia，Evoida及其能够在提取混合物的环境温度至沸点温度下产生所述干扰素诱导剂的变异体 足以提取存在于植物组织中的所述干扰素诱导剂的主要部分的时间，形成上清液，分离上清液以产生含有上清液中所述干扰素诱导物主要部分的级分并从其中回收所述干扰素诱导剂。 优选地，分级可以通过超滤来实现。 由此获得的干扰素诱导物具有约30,000至约3,000,000的分子量，并且对于预防和治疗由病毒感染引起的人和动物的各种疾病具有潜在的兴趣。

公开(公告)号：US4105158A

公开(公告)日：1978-08-08

申请号：US748330

申请日：1976-12-07

申请人： Nobutoshi Hasebe ,  Toshiyuki Itoh ,  Takashi Hashimoto

发明人： Nobutoshi Hasebe ,  Toshiyuki Itoh ,  Takashi Hashimoto

IPC分类号： F24H3/06 ,  B60H1/03 ,  B60H1/22 ,  F23D11/24 ,  B60H1/02

CPC分类号： B60H1/2209 ,  B60H1/032 ,  B60H1/2203 ,  B60H2001/2271

摘要： Preheating and warming apparatus for use with vehicles comprising an outer housing provided with a clean air inlet port, a clean air outlet port and an exhaust gas outlet port, an inner housing having the interior thereof divided by a partition into a clean air introducing chamber and a combustion chamber, a fan motor disposed in the clean air introducing chamber and mounting a combustion fan on one of two output shafts of the fan motor, a sucking fan mounted on the other output shaft of the fan motor and disposed in the vicinity of the clean air inlet port of the outer housing, fuel injection means secured to the partition wall, a baffle plate disposed adjacent to the fuel injection means in the combustion chamber, a coiled water heating tube disposed in the combustion chamber, and radiation fins secured to the outer peripheral surface of the portion of the inner housing defining the combustion chamber, said components constituting a combustor for effecting combustion of liquid fuel to generate heat, said heat being used for heating air and water adapted to be supplied to a cabin and other accessories of the vehicle to heat them up.

摘要翻译： 用于与车辆一起使用的预热和加温装置，包括设置有清洁空气入口的外壳，清洁空气出口和废气出口，内部壳体，其内部由隔板分成清洁空气导入室， 燃烧室，设置在清洁空气引入室中的风扇电动机，并将风扇安装在风扇电动机的两个输出轴之一上;吸风扇，安装在风扇电动机的另一个输出轴上， 外壳的清洁空气入口，固定到分隔壁的燃料喷射装置，与燃烧室中的燃料喷射装置相邻设置的挡板，设置在燃烧室中的盘旋水加热管，以及固定到燃烧室的散热片 所述内壳体的所述部分的外周表面限定所述燃烧室，所述部件构成用于实现液体燃料t的燃烧的燃烧器 o产生热量，所述热量用于加热适于供应到车厢和车辆的其他附件的空气和水以加热它们。

公开(公告)号：US4069754A

公开(公告)日：1978-01-24

申请号：US618338

申请日：1975-10-01

申请人： Kenzo Araya ,  Takashi Hashimoto ,  Yoshitaka Fukui

发明人： Kenzo Araya ,  Takashi Hashimoto ,  Yoshitaka Fukui

IPC分类号： B41L11/08 ,  B41L11/00 ,  B41L11/12 ,  B41L23/04 ,  B41L39/04 ,  B41L45/02 ,  B41L21/00 ,  B41L47/18

CPC分类号： B41L11/00 ,  B41L11/12 ,  B41L23/04 ,  B41L39/04

摘要： A transfer-printing process and apparatus for transfer-printing from a master card onto a work piece. The process starts by manual insertion of the master card into a gap provided between press rollers. By the insertion of the master card, the work piece is fed into a work piece path and the surface thereof is wetted during its movement along the path. The work piece thus fed and the master card sustained between the gap are registered with each other as desired and pressed for transfer-printing by the rotation of the press rollers. The work piece and the master card are then delivered to the insertion inlet of the master card.

摘要翻译： 一种用于从主卡转印到工件上的转印印刷工艺和设备。 该过程通过将主卡手动插入到压辊之间的间隙中开始。 通过插入主卡，工件被输送到工件路径中，并且其表面在其沿着路径的移动期间被润湿。 由此进给的工件和在间隙之间保持的主卡根据需要彼此对准，并通过压辊的旋转被按压用于转印。 然后将工件和主卡传送到主卡的插入口。

公开(公告)号：US08775998B2

公开(公告)日：2014-07-08

申请号：US13576515

申请日：2011-11-10

申请人： Takashi Morimoto ,  Takashi Hashimoto

发明人： Takashi Morimoto ,  Takashi Hashimoto

IPC分类号： G06F17/50 ,  H01L29/00 ,  H01L23/04 ,  H01L29/40

CPC分类号： H01L27/0207 ,  G06F17/5045 ,  G06F17/5068 ,  H01L21/76898 ,  H01L24/16 ,  H01L24/32 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2224/13025 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/32146 ,  H01L2224/32225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00

摘要： To provide a design support device of a three-dimensional integrated circuit capable of, in the case where a placement position of a through-via changes in the design phase of a three-dimensional integrated circuit composed of a plurality of semiconductor chips in layers, avoiding change of respective placement positions of other parts as much as possible. A design support device includes a TSV placement unit that determines respective placement positions of through-vias on one semiconductor chip, the through-bias each penetrating to connect to another semiconductor chip, a TSV reserved cell placement unit that determines, based on the respective placement positions of the through-vias, respective placement positions of reserved cells as respective spare placement positions of the through-vias, and a mask data generation unit that generates layout data that includes the respective placement positions of the through-vias and the respective placement positions of the reserved cells.

摘要翻译： 为了提供一种三维集成电路的设计支持装置，其能够在贯通通孔的放置位置在层叠由多个半导体芯片组成的三维集成电路的设计阶段中变化的情况下， 避免尽可能多地改变其他部分的各个放置位置。 设计支持设备包括TSV放置单元，TSV放置单元确定一个半导体芯片上的通孔的相应放置位置，每个穿透连接到另一个半导体芯片的通过偏压，TSV保留单元放置单元，其基于相应的放置 通孔的位置，保留单元的相应放置位置作为贯通孔的相应的备用布置位置，以及掩模数据生成单元，其生成布局数据，该布局数据包括通孔的各个放置位置和各个放置位置 的保留单元格。

公开(公告)号：US08735763B2

公开(公告)日：2014-05-27

申请号：US13061719

申请日：2009-03-09

申请人： Takashi Hashimoto ,  Taichiro Tamida ,  Takayoshi Nagai

发明人： Takashi Hashimoto ,  Taichiro Tamida ,  Takayoshi Nagai

IPC分类号： B23H1/02

CPC分类号： B23H1/022 ,  B23H2300/20 ,  H02M7/537 ,  Y02B70/1441

摘要： A switching element operates to be turned on or off at a frequency in the order of megahertz. A reactor supplies a resonance current generated by resonance of the reactor with a floating capacitance between electrodes to between the electrodes. The resonance current does not flow in a direct-current power supply. By turning a capacitor and a floating inductance into a serial resonant state, the reactor ideally supplies the resonance current to between the electrodes without influence of the floating inductance. A high-frequency voltage asymmetric in positive and negative polarities is applied to between the electrodes and a current pulse can be made into a short pulse. Therefore, finish machining with high surface roughness can be performed.

摘要翻译： 开关元件工作在频率为兆赫兹的频率下导通或截止。 电抗器通过电抗器的谐振产生的谐振电流与电极之间的电极之间的浮动电容提供。 谐振电流不会流入直流电源。 通过将电容器和浮动电感转化为串联谐振状态，反应器理想地将谐振电流提供给电极之间，而不受浮动电感的影响。 在电极之间施加正极性和负极性不对称的高频电压，并且可以将电流脉冲制成短脉冲。 因此，可以进行表面粗糙度高的精加工。

公开(公告)号：US08704226B2

公开(公告)日：2014-04-22

申请号：US13812011

申请日：2012-01-11

申请人： Takashi Morimoto ,  Takashi Hashimoto

发明人： Takashi Morimoto ,  Takashi Hashimoto

IPC分类号： H01L23/58

CPC分类号： H01L23/49527 ,  H01L22/22 ,  H01L24/13 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/0657 ,  H01L27/0688 ,  H01L2224/13009 ,  H01L2224/13147 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06562 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/3511 ,  H03K19/00392 ,  H01L2924/00014 ,  H01L2924/00

摘要： A chip is layered on a rewiring member. A plurality of connecting members and a plurality of redundant connecting members are arranged in the chip, and electrically connect the chip to the rewiring member. Redundant circuits are embedded in each of the rewiring member and the chip. When one of the connecting members is faulty, the redundant circuits cause one of the redundant connecting members to transmit a signal between the rewiring member and the chip, instead of the faulty connecting member. The connecting members have first and second subsets arranged in first and second regions, respectively. A distance between the rewiring member and the chip exceeds a predetermined threshold value in the first region in contrast to the second region. The first subset has a higher proportion of connecting members that the redundant circuits can replace with a subset of the redundant connecting members than the second subset.

摘要翻译： 芯片层叠在重新布线构件上。 多个连接构件和多个冗余连接构件布置在芯片中，并将芯片电连接到重新布线构件。 冗余电路嵌入在每个重新布线构件和芯片中。 当其中一个连接构件故障时，冗余电路使冗余连接构件中的一个在重新布线构件和芯片之间传递信号，而不是错误的连接构件。 连接构件具有分别布置在第一和第二区域中的第一和第二子集。 与第二区域相比，重新布线构件和芯片之间的距离超过了第一区域中的预定阈值。 第一子集具有较高比例的连接构件，冗余电路可以用冗余连接构件的子集替代第二子集。

公开(公告)号：US08559736B2

公开(公告)日：2013-10-15

申请号：US13321857

申请日：2011-03-16

申请人： Hiroshi Amano ,  Takeshi Tanaka ,  Takashi Hashimoto ,  Yoshiteru Hayashi

发明人： Hiroshi Amano ,  Takeshi Tanaka ,  Takashi Hashimoto ,  Yoshiteru Hayashi

IPC分类号： H04N7/50

CPC分类号： H04N19/60 ,  H04N19/122 ,  H04N19/44 ,  H04N19/547

摘要： A decoding apparatus (100) according to the present invention includes: a decoding unit (101) which decodes identification information identifying an orthogonal transform basis for inverse orthogonal transform; an orthogonal transform basis accumulation unit (110) accumulating orthogonal transform bases for inverse orthogonal transform; an orthogonal transform basis storage unit (103) storing an orthogonal transform basis for inverse transform, from among the stored orthogonal transform bases; an inverse orthogonal transform unit (112) which performs inverse orthogonal transform using the identified orthogonal transform basis; and an orthogonal transform basis transfer control unit (102) which transfers the identified orthogonal transfer basis from the orthogonal transform basis accumulation unit (110) to the orthogonal transfer basis storage unit (103) only when the identified orthogonal transform basis is not yet stored therein. With this structure, it is possible to reduce the memory bandwidth for the memory storing the orthogonal transform basis and the memory access latency.

摘要翻译： 根据本发明的解码装置（100）包括：解码单元（101），其对识别用于逆正交变换的正交变换基准的识别信息进行解码; 正交变换基积累单元（110），累积用于逆正交变换的正交变换基; 正交变换基准存储单元，从存储的正交变换基中存储用于逆变换的正交变换基础; 使用所识别的正交变换基础进行逆正交变换的逆正交变换单元（112） 以及正交变换基传送控制单元（102），其仅在所识别的正交变换基础尚未存储时，将所识别的正交传送基础从正交变换基础累积单元（110）传送到正交传送基础存储单元（103） 。 利用这种结构，可以减少存储正交变换基础和存储器访问延迟的存储器的存储器带宽。

公开(公告)号：US08497547B2

公开(公告)日：2013-07-30

申请号：US13591035

申请日：2012-08-21

申请人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Takashi Hashimoto

发明人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Takashi Hashimoto

IPC分类号： H01L27/115

CPC分类号： H01L29/7885 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42328

摘要： Provided is a semiconductor device having, over a semiconductor substrate, a control gate electrode and a memory gate electrode which are adjacent to each other and constitute a nonvolatile memory. The height of the memory gate electrode is lower than the height of the control gate electrode. A metal silicide film is formed over the upper surface of the control gate electrode, but not formed over the upper surface of the memory gate electrode. The memory gate electrode has, over the upper surface thereof, a sidewall insulating film made of silicon oxide. This sidewall insulating film is formed in the same step as that for the formation of respective sidewall insulating films over the sidewalls of the memory gate electrode and the control gate electrode. The present invention makes it possible to improve the production yield and performance of the semiconductor device having a nonvolatile memory.

摘要翻译： 提供了一种在半导体衬底上具有彼此相邻并构成非易失性存储器的控制栅电极和存储栅电极的半导体器件。 存储栅电极的高度低于控制栅电极的高度。 在控制栅电极的上表面上形成金属硅化物膜，但不形成在存储栅电极的上表面上。 存储栅电极在其上表面上具有由氧化硅制成的侧壁绝缘膜。 该侧壁绝缘膜以与用于在存储栅电极和控制栅电极的侧壁上形成各个侧壁绝缘膜的步骤相同的步骤形成。 本发明使得可以提高具有非易失性存储器的半导体器件的生产率和性能。

公开(公告)号：US08385762B2

公开(公告)日：2013-02-26

申请号：US12461905

申请日：2009-08-27

申请人： Hidetaka Noguchi ,  Toshiyuki Andoh ,  Takashi Hodoshima ,  Seiji Hoshino ,  Takashi Hashimoto

发明人： Hidetaka Noguchi ,  Toshiyuki Andoh ,  Takashi Hodoshima ,  Seiji Hoshino ,  Takashi Hashimoto

IPC分类号： G03G15/06 ,  G03G15/00

CPC分类号： G03G15/1605 ,  G03G15/0194 ,  G03G15/657

摘要： A transfer roller lies opposite to a supporting roller across an image carrying belt and abuts against the outer surface of the image carrying belt to form a transfer nip. A driving force transmission unit transmits driving force from a driving source to a driving roller. A drive control unit performs drive control of the driving source. A feedforward control unit performs feedforward control on the driving source via the drive control unit. An entry detecting unit detects entry of a sheet in the transfer nip. The feedforward control unit considers an entry detection signal output by the entry sensor as a trigger for performing feedforward control after a predetermined time.

摘要翻译： 转印辊与支撑辊相对，穿过图像承载带并抵靠图像承载带的外表面以形成转印辊隙。 驱动力传递单元将来自驱动源的驱动力传递到驱动辊。 驱动控制单元执行驱动源的驱动控制。 前馈控制单元通过驱动控制单元对驱动源进行前馈控制。 入口检测单元检测转印辊隙中纸张的进入。 前馈控制单元将入口传感器输出的入口检测信号视为在预定时间之后执行前馈控制的触发。

公开(公告)号：US20120306051A1

公开(公告)日：2012-12-06

申请号：US13587008

申请日：2012-08-16

申请人： Yoshiyuki Kawashima ,  Koichi Toba ,  Yasushi Ishii ,  Toshikazu Matsui ,  Takashi Hashimoto

发明人： Yoshiyuki Kawashima ,  Koichi Toba ,  Yasushi Ishii ,  Toshikazu Matsui ,  Takashi Hashimoto

IPC分类号： H01L27/08

CPC分类号： H01L28/60 ,  H01L27/0629 ,  H01L27/0805 ,  H01L27/105 ,  H01L27/10805 ,  H01L27/11526 ,  H01L27/11531 ,  H01L27/11573 ,  H01L28/40

摘要： In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.

摘要翻译： 关于包括电容器元件的半导体器件，提供了一种能够提高电容器元件的可靠性的技术。 电容器元件形成在半导体衬底上形成的元件隔离区域中。 电容器元件包括通过电容器绝缘膜形成在下电极上的下电极和上电极。 基本上，下电极和上电极由形成在多晶硅膜的表面上的多晶硅膜和硅化钴膜形成。 形成在上电极上的钴硅化物膜的端部与上电极的端部间隔开一定距离。 此外，形成在下电极上的钴硅化物膜的端部与上电极和下电极之间的边界间隔一定距离。