公开(公告)号：US06841403B2

公开(公告)日：2005-01-11

申请号：US10348747

申请日：2003-01-21

申请人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

发明人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

IPC分类号： H01L21/00 ,  H01L21/66 ,  G06F19/00

CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

摘要翻译： 本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置，使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备，采取补救措施，以及 实现恒定和高收益。 本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性，分析评估的相似性的数据序列的循环性，评估从 根据制造线上每个制造设备的分析和处理方法，并推断或确定引起缺陷的因果过程和设备。

公开(公告)号：US06797526B2

公开(公告)日：2004-09-28

申请号：US10232871

申请日：2002-08-30

申请人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

发明人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

IPC分类号： H01L2100

CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

摘要翻译： 本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置，使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备，采取补救措施，以及 实现恒定和高收益。 本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性，分析评估的相似性的数据序列的循环性，评估从 根据制造线上每个制造设备的分析和处理方法，并推断或确定引起缺陷的因果过程和设备。

公开(公告)号：US06791082B2

公开(公告)日：2004-09-14

申请号：US10347616

申请日：2003-01-22

申请人： Osamu Komuro ,  Hidetoshi Morokuma ,  Chie Shishido

发明人： Osamu Komuro ,  Hidetoshi Morokuma ,  Chie Shishido

IPC分类号： G01M1900

CPC分类号： G03F7/70641 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70625 ,  H01J37/304 ,  H01J37/3174

摘要： In order to accurately monitor changes in exposure conditions (changes in exposure level and focus) at a product wafer level during lithography, changes in exposure conditions can be calculated by acquiring electron beam images of a first pattern portion and a second pattern portion different from one another in terms of the tendency of the changes in dimensional characteristic quantities against the changes in exposure conditions, then calculating the respective dimensional characteristic quantities of the first pattern portion and the second pattern portion, and applying these dimensional characteristic quantities to the models which logically link the exposure conditions and the dimensional characteristic quantities. Hereby, it is possible to supply the process conditions change monitoring systems and methods that enable output of accurate changes in exposure level and focus.

摘要翻译： 为了在光刻期间准确地监视产品晶片级的曝光条件（曝光水平和焦点的变化）的变化，可以通过获取不同于第一图案部分和第二图案部分的电子束图像来计算曝光条件的变化 另一方面，根据暴露条件变化的尺寸特征量变化的趋势，然后计算第一图案部分和第二图案部分的相应尺寸特征量，并将这些尺寸特征量应用于逻辑链接的模型 暴露条件和尺寸特征量。 因此，可以提供能够输出曝光水平和焦点的精确变化的过程条件变化监视系统和方法。

公开(公告)号：US06674890B2

公开(公告)日：2004-01-06

申请号：US09733092

申请日：2000-12-11

申请人： Shunji Maeda ,  Kenji Oka ,  Hiroshi Makihira ,  Yasuhiko Nakayama ,  Minoru Yoshida ,  Yukihiro Shibata ,  Chie Shishido

发明人： Shunji Maeda ,  Kenji Oka ,  Hiroshi Makihira ,  Yasuhiko Nakayama ,  Minoru Yoshida ,  Yukihiro Shibata ,  Chie Shishido

IPC分类号： G06K900

CPC分类号： G06T7/001 ,  G01R31/308 ,  G01R31/311 ,  G03F7/7065 ,  G06T7/0004 ,  G06T2207/10061 ,  G06T2207/30121 ,  G06T2207/30148

摘要： A pattern inspection method and apparatus in which an image of a first pattern formed on a sample and an image of a second pattern formed on the sample is detected. At least one of the first pattern image and the second pattern image is converted to a gray level so as to be substantially the same with each other by linear combination including a gain and offset. A defect of the sample is detected by using the first pattern image and the second pattern image at least one of which has been converted to the gray level and a result of the detection is outputted to an external storage or processor by a communication arrangement.

摘要翻译： 检测形成在样本上的第一图案的图像和形成在样本上的第二图案的图像的图案检查方法和装置。 第一图案图像和第二图案图像中的至少一个被转换为灰度级，以便通过包括增益和偏移的线性组合彼此基本相同。 通过使用第一图案图像和其中至少一个已经被转换为灰度级的第二图案图像和通过通信装置将检测结果输出到外部存储器或处理器来检测样本的缺陷。

公开(公告)号：US09354049B2

公开(公告)日：2016-05-31

申请号：US13880429

申请日：2011-10-21

申请人： Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto ,  Akira Hamamatsu ,  Manabu Yano

发明人： Chie Shishido ,  Maki Tanaka ,  Atsushi Miyamoto ,  Akira Hamamatsu ,  Manabu Yano

IPC分类号： G01B21/04 ,  G01B15/04 ,  H01L21/66

CPC分类号： G01B21/04 ,  G01B15/04 ,  H01L22/12

摘要： A model based measurement method is capable of estimating a cross-sectional shape by matching various pre-created cross-sectional shapes with a library of SEM signal waveforms. The present invention provides a function for determining whether or not it is appropriate to create a model of a cross-sectional shape or a function for verifying the accuracy of estimation results to a conventional model based measurement method, wherein a solution space (expected solution space) is obtained by matching library waveforms and is displayed before measuring the real pattern by means of model based measurement. Moreover, after the real pattern is measured by means of model based measurement, the solution space (real solution space) is obtained by matching the real waveforms with the library waveforms and is displayed.

摘要翻译： 基于模型的测量方法能够通过将各种预先创建的横截面形状与SEM信号波形的库进行匹配来估计横截面形状。 本发明提供一种功能，用于确定是否适于创建横截面形状的模型或用于验证估计结果的准确性的功能，以用于基于常规的基于模型的测量方法，其中，解空间（预期解空间 ）通过匹配库波形获得，并且在通过基于模型的测量测量实际图案之前显示。 此外，在通过基于模型的测量来测量实际模式之后，通过将实际波形与库波形相匹配来获得解空间（实解空间），并显示。

公开(公告)号：US09019362B2

公开(公告)日：2015-04-28

申请号：US13513280

申请日：2010-11-08

申请人： Jie Bai ,  Kenji Nakahira ,  Atsushi Miyamoto ,  Chie Shishido ,  Hideyuki Kazumi

发明人： Jie Bai ,  Kenji Nakahira ,  Atsushi Miyamoto ,  Chie Shishido ,  Hideyuki Kazumi

IPC分类号： H04N7/18 ,  G01N23/00 ,  G21K7/00 ,  G06K9/00 ,  G06K9/46 ,  G06K9/66 ,  H01J37/28 ,  H01J37/244 ,  H01L21/66

CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J2237/24495 ,  H01J2237/2809 ,  H01J2237/2817 ,  H01L22/12

摘要： The invention relates to a technique of improving a contrast of a lower-layer pattern in a multi layer by synthesizing detected signals from a plurality of detectors by using an appropriate allocation ratio in accordance with pattern arrangement. In a charged particle beam device capable of improving image quality by using detected images obtained from a plurality of detectors and in a method of improving the image quality, a method of generating one or more output images from detected images corresponding to respective outputs of the detectors that are arranged at different locations is controlled by using information of a pattern direction, an edge strength, or others calculated from a design data or the detected image. In this manner, a detection area of the detected signals can be expanded by using the plurality of detectors, and the image quality such as the contrast can be improved by synthesizing the detected signals by using the pattern direction or the edge strength calculated from the design data or the detected images.

摘要翻译： 本发明涉及一种通过根据图案布置使用合适的分配比例来合成来自多个检测器的检测信号来提高多层下层图案的对比度的技术。 在能够通过使用从多个检测器获得的检测图像来提高图像质量的带电粒子束装置中，以及提高图像质量的方法中，提供一种从与检测器的各个输出对应的检测图像生成一个或多个输出图像的方法 通过使用从设计数据或检测到的图像计算的图案方向，边缘强度或其他的信息来控制布置在不同位置处的位置。 以这种方式，可以通过使用多个检测器来扩展检测信号的检测区域，并且可以通过使用从设计计算出的图案方向或边缘强度合成检测信号来提高诸如对比度的图像质量 数据或检测到的图像。

公开(公告)号：US08671366B2

公开(公告)日：2014-03-11

申请号：US13390354

申请日：2010-07-15

申请人： Maki Tanaka ,  Norio Hasegawa ,  Chie Shishido ,  Mayuka Osaki

发明人： Maki Tanaka ,  Norio Hasegawa ,  Chie Shishido ,  Mayuka Osaki

IPC分类号： G06F17/50

CPC分类号： G01B15/04 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention aims at proposing a library creation method and a pattern shape estimation method in which it is possible, when estimating a shape based on comparison between an actual waveform and a library, to appropriately estimate the shape.As an illustrative embodiment to achieve the object, there are proposed a method of selecting a pattern by referring to a library, a method of creating a library by use of pattern cross-sectional shapes calculated through an exposure process simulation in advance, and a method for selecting a pattern shape stored in the library.

摘要翻译： 本发明旨在提出一种库创建方法和图案形状估计方法，其中当基于实际波形和库之间的比较来估计形状时，可以适当地估计形状。 作为实现该目的的说明性实施例，提出了通过参照库来选择图案的方法，通过使用预先通过曝光处理模拟计算的图案横截面形状来创建库的方法，以及方法 用于选择存储在库中的图案形状。

公开(公告)号：US20120126116A1

公开(公告)日：2012-05-24

申请号：US13387944

申请日：2010-07-15

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo ,  Mayuka Osaki

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo ,  Mayuka Osaki

IPC分类号： H01J37/26

CPC分类号： G01B15/04

摘要： The present invention has an object to propose a method and an apparatus for selecting a pattern shape, wherein, when estimating a shape based on comparison between an actual waveform and a library, the method and the apparatus can appropriately estimate the shape. As an embodiment to achieve the object, a method and an apparatus for selecting a pattern shape by comparing an obtained shape with pattern shapes memorized in the library are proposed, wherein plural pieces of waveform information are obtained under a plurality of waveform acquiring conditions based on radiation of a charged particle beam onto a specimen; and a pattern shape memorized in the library is selected by referring, with respect to the plural pieces of waveform information, to a library memorizing plural pieces of waveform information acquired under different waveform acquiring conditions for each of a plurality of pattern shapes.

摘要翻译： 本发明的目的是提出一种用于选择图案形状的方法和装置，其中，当基于实际波形和库之间的比较来估计形状时，该方法和装置可以适当地估计形状。 作为实现该目的的实施例，提出了一种通过将获得的形状与存储在库中的图案形状进行比较来选择图案形状的方法和装置，其中在多个波形获取条件基础上获得多条波形信息， 将带电粒子束辐射到样品上; 并且通过将关于多条波形信息参考多个图案形状中的每一个，记录存储在不同波形获取条件下获得的多条波形信息的库，选择存储在库中的图案形状。

公开(公告)号：US08095896B2

公开(公告)日：2012-01-10

申请号：US12031782

申请日：2008-02-15

申请人： Hirohito Koike ,  Hidetoshi Morokuma ,  Chie Shishido

发明人： Hirohito Koike ,  Hidetoshi Morokuma ,  Chie Shishido

IPC分类号： G06F17/50

CPC分类号： G03F7/70641 ,  G03F7/70508 ,  G03F7/70625

摘要： There is provided a device which may easily and visually judge which chip in an FEM wafer has a normal exposure condition, or which chip has an abnormal exposure condition.A feature quantity for a sectional shape of a resist pattern of an FEM wafer is calculated for each chip region on an FEM wafer using an image of a resist pattern for an FEM wafer. The feature quantity of a sectional shape is displayed for each chip in a chip table of a map representing a position of a chip region on the FEM wafer. Deviations in feature quantities of sectional shapes of resist patterns of a FEM wafer to an appropriate value are displayed in color in the chip table.

摘要翻译： 提供了一种可以容易地和可视地判断FEM晶片中的哪个芯片具有正常曝光条件或哪个芯片具有异常曝光条件的装置。 使用有限元晶片的抗蚀剂图案的图像，在FEM晶片上的每个芯片区域计算有限元晶片的抗蚀剂图案的截面形状的特征量。 对于表示有限元晶片上的芯片区域的位置的映射的芯片表中的每个芯片显示截面形状的特征量。 将有限元晶片的抗蚀剂图案的截面形状的特征量的偏差显示为适当的值，在芯片表中显示为彩色。

公开(公告)号：US08022356B2

公开(公告)日：2011-09-20

申请号：US12588517

申请日：2009-10-19

申请人： Mayuka Oosaki ,  Chie Shishido ,  Maki Tanaka ,  Hiroki Kawada

发明人： Mayuka Oosaki ,  Chie Shishido ,  Maki Tanaka ,  Hiroki Kawada

IPC分类号： G01D18/00 ,  G01N23/00 ,  G21K7/00

CPC分类号： G01N23/225 ,  H01J2237/2823

摘要： A method of evaluating a resolution of a scanning electron microscope includes picking up a first image of a concave and convex pattern formed on a surface of a sample utilizing a first scanning electron microscope, picking up a second image of the concave and convex pattern on the sample utilizing a second scanning electron microscope, respectively processing the first image and the second image in order to evaluate unevenness in resolution between the first scanning electron microscope and the second scanning electron microscope, and determining whether a height of the concave and convex pattern as measured from a bottom thereof is sufficient so that no affection by a secondary electron emitted from the bottom of the concave and convex pattern is exhibited.

摘要翻译： 评价扫描型电子显微镜的分辨率的方法包括利用第一扫描电子显微镜拾取形成在样品表面上的凹凸图案的第一图像，在第二图像上拾取凹凸图案的第二图像 分别处理第一图像和第二图像以评估第一扫描电子显微镜和第二扫描电子显微镜之间的分辨率的不均匀性，以及确定测量的凹凸图案的高度是否为第二扫描电子显微镜 从底部开始就足够了，从而不会发生由凹凸图案的底部发射的二次电子的影响。