Resist-modifying composition and pattern forming process
    82.
    发明授权
    Resist-modifying composition and pattern forming process 有权
    抗蚀剂改性组合物和图案形成工艺

    公开(公告)号:US08329384B2

    公开(公告)日:2012-12-11

    申请号:US12785930

    申请日:2010-05-24

    IPC分类号: G03F7/00 G03F7/004 G03F7/40

    摘要: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

    摘要翻译: 图案化工艺包括(1)将第一正性抗蚀剂组合物涂覆在基材上,烘烤,曝光,曝光后烘烤和碱显影以形成第一抗蚀剂图案,(2)将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理,(3)涂布第二正性抗蚀剂组合物,烘烤,曝光,曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式(1)的重复单元的基础树脂,其中A1是亚烷基,R1是H或甲基,R2是烷基或键合在一起形成含氮杂环和醇类溶剂。

    Positive resist compositions and patterning process
    85.
    发明授权
    Positive resist compositions and patterning process 有权
    正极抗蚀剂组成和图案化工艺

    公开(公告)号:US08017302B2

    公开(公告)日:2011-09-13

    申请号:US12355418

    申请日:2009-01-16

    IPC分类号: G03F7/004 G03F7/30

    摘要: A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units, represented by formula (1). The acid generator (B) is a specific sulfonium salt compound. When processed by lithography, the composition is improved in resolution and forms a pattern with a minimal LER. Herein R1 is H or methyl, R2 is an acid labile group, R3 is CO2R4 when X is CH2, R3 is H or CO2R4 when X is O, R4 is a monovalent C1-C20 hydrocarbon group, and m is 1 or 2.

    摘要翻译: 正型抗蚀剂组合物包含(A)在酸的作用下变得可溶于碱性显影剂的树脂组分和(B)酸产生剂。 树脂(A)是包含由式(1)表示的特定重复单元的聚合物。 酸产生剂(B)是特定的锍盐化合物。 当通过光刻处理时,组合物的分辨率提高并且形成具有最小LER的图案。 本文中R1是H或甲基,R2是酸不稳定基团,当X是CH2时,R3是CO2R4,当X是O时,R3是H,CO2R4,R4是一价C1-C20烃基,m是1或2。

    PATTERNING PROCESS
    88.
    发明申请
    PATTERNING PROCESS 审中-公开
    绘图过程

    公开(公告)号:US20100086878A1

    公开(公告)日:2010-04-08

    申请号:US12575097

    申请日:2009-10-07

    IPC分类号: G03F7/20

    摘要: A pattern is formed by applying a first positive resist material onto a substrate, heat treating, exposing to high-energy radiation, heat treating, then developing with a developer to form a first resist pattern; applying a protective coating solution comprising a hydrolyzable silicon compound having an amino group onto the first resist pattern and the substrate, heating to form a protective coating; and applying a second positive resist material thereon, heat treating, exposing to high-energy radiation, heat treating, and then developing with a developer to form a second resist pattern. By forming the second pattern in a space portion of the first pattern, this double patterning reduces the pattern pitch to one half.

    摘要翻译: 通过将第一正性抗蚀剂材料施加到基底上,热处理,暴露于高能量辐射,热处理,然后用显影剂显影以形成第一抗蚀剂图案,形成图案; 将包含具有氨基的可水解硅化合物的保护涂层溶液施加到第一抗蚀剂图案和基底上,加热形成保护涂层; 并在其上施加第二正性抗蚀剂材料,热处理,暴露于高能量辐射,热处理,然后用显影剂显影以形成第二抗蚀剂图案。 通过在第一图案的空间部分中形成第二图案,该双重图案将图案间距减小到一半。

    Resist composition and patterning process
    90.
    发明申请
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号:US20100009299A1

    公开(公告)日:2010-01-14

    申请号:US12457192

    申请日:2009-06-03

    IPC分类号: G03F7/00 C07C229/00

    摘要: The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

    摘要翻译: 本发明涉及:抗蚀剂组合物,例如化学放大抗蚀剂组合物,除了在微制造的光刻中具有更高分辨率之外,甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形,特别是在光刻 采用KrF激光,ArF激光,F2激光,超短紫外光,电子束,X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物,其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物(除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些) 并且不具有与氮原子共价键合的氢原子作为碱性中心。