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    Method of making a low resistance MTJ
    81.
    发明授权
    Method of making a low resistance MTJ 有权
    制造低电阻MTJ的方法

    公开(公告)号：US06261646B1

    公开(公告)日：2001-07-17

    申请号：US09639746

    申请日：2000-08-14

    申请人： Eugene Chen ,  Jon Slaughter ,  Renu Whig

    发明人： Eugene Chen ,  Jon Slaughter ,  Renu Whig

    IPC分类号： C23C1414

    CPC分类号： H01L43/12 ,  Y10S428/90 ,  Y10T428/26 ,  Y10T428/265

    摘要： A low resistance magnetic tunnel junction with low resistance barrier layer and method of fabrication is disclosed. A first magnetic layer of material with a surface is provided and a continuous layer of material, e.g. aluminum, is formed on the surface of the first magnetic layer. The continuous layer of material is treated to produce a low resistance barrier layer of oxynitride material and a second magnetic layer is formed on the barrier layer of oxynitride material to complete the low resistance magnetic tunnel junction.

    摘要翻译： 公开了具有低电阻阻挡层的低电阻磁隧道结及其制造方法。 提供具有表面的第一磁性材料层和连续的材料层，例如， 铝，形成在第一磁性层的表面上。 处理连续的材料层以产生氮氧化物材料的低电阻阻挡层，并且在氧氮化物材料的阻挡层上形成第二磁性层以完成低电阻磁性隧道结。

    Low resistance MTJ
    82.
    发明授权
    Low resistance MTJ 失效
    低电阻MTJ

    公开(公告)号：US06183859B2

    公开(公告)日：2001-02-06

    申请号：US09119537

    申请日：1998-07-20

    申请人： Eugene Chen ,  Jon Slaughter ,  Renu Whig

    发明人： Eugene Chen ,  Jon Slaughter ,  Renu Whig

    IPC分类号： G11B566

    CPC分类号： H01L43/12 ,  Y10S428/90 ,  Y10T428/26 ,  Y10T428/265

    摘要： A low resistance magnetic tunnel junction with low resistance barrier layer and method of fabrication is disclosed. A first magnetic layer of material with a surface is provided and a continuous layer of material, e.g. aluminum, is formed on the surface of the first magnetic layer. The continuous layer of material is treated to produce a low resistance barrier layer of oxynitride material and a second magnetic layer is formed on the barrier layer of oxynitride material to complete the low resistance magnetic tunnel junction.

    摘要翻译： 公开了具有低电阻阻挡层的低电阻磁隧道结及其制造方法。 提供具有表面的第一磁性材料层和连续的材料层，例如， 铝，形成在第一磁性层的表面上。 处理连续的材料层以产生氮氧化物材料的低电阻阻挡层，并且在氧氮化物材料的阻挡层上形成第二磁性层以完成低电阻磁性隧道结。

    Magnetic random access memory and fabricating method thereof
    83.
    发明授权
    Magnetic random access memory and fabricating method thereof 有权
    磁性随机存取存储器及其制造方法

    公开(公告)号：US06174737B1

    公开(公告)日：2001-01-16

    申请号：US09339460

    申请日：1999-06-24

    申请人： Mark Durlam ,  Gloria Kerszykowski ,  Jon Slaughter ,  Theodore Zhu ,  Eugene Chen ,  Saied N. Tehrani ,  Kelly W. Kyler

    发明人： Mark Durlam ,  Gloria Kerszykowski ,  Jon Slaughter ,  Theodore Zhu ,  Eugene Chen ,  Saied N. Tehrani ,  Kelly W. Kyler

    IPC分类号： H01L2100

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/224

    摘要： An improved and novel MRAM device with magnetic memory elements and circuitry for controlling magnetic memory elements is provided. The circuitry, for example, transistor (12a) having a gate (17a), a drain (18) and a source (16a) is integrated on a substrate (11) and coupled to a magnetic memory element (43) on the circuitry through a plug conductor (19a) and a conductor line (45). The circuitry is fabricated first under the CMOS process and then magnetic memory elements (43, 44). Digit line (29) and bit line (48) are placed under and on top of magnetic memory element (43), respectively, and enabled to access magnetic memory element (43). These lines are enclosed by a high permeability layer (31, 56, 58) excluding a surface facing magnetic memory element (43), which shields and focuses a magnetic field toward magnetic memory element (43).

    摘要翻译： 提供了一种具有磁存储器元件和用于控制磁存储元件的电路的改进和新颖的MRAM器件。 电路，例如具有栅极（17a），漏极（18）和源极（16a）的晶体管（12a）集成在衬底（11）上并且耦合到电路上的磁存储元件（43），通过 插头导体（19a）和导线（45）。 首先在CMOS工艺之下制造电路，然后制造磁存储元件（43,44）。 数字线（29）和位线（48）分别放置在磁存储元件（43）的下面和顶部，并且能够访问磁存储元件（43）。 这些线被除了面向磁性存储元件（43）的高磁导率层（31,56,58）包围，磁性层屏蔽并将磁场聚焦到磁性存储元件（43）。

    MRAM with high GMR ratio
    84.
    发明授权
    MRAM with high GMR ratio 失效
    MRAM具有高GMR比

    公开(公告)号：US5828598A

    公开(公告)日：1998-10-27

    申请号：US862738

    申请日：1997-05-23

    申请人： Eugene Chen ,  Saied N. Tehrani ,  David W. Cronk

    发明人： Eugene Chen ,  Saied N. Tehrani ,  David W. Cronk

    IPC分类号： G11C11/15 ,  G11C7/00

    CPC分类号： G11C11/15

    摘要： A magnetic memory cell with increased GMR ratio includes first and second layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material sandwiched between the first and second layers of magnetic material. Each of the first and second layers is switchable between a first and a second magnetic state and is formed to switch states with the application of a substantially equal magnetic field. A third layer of magnetic material is positioned adjacent one of the first and second layers of magnetic material so as to alter the amount of magnetic field required to switch the states of the one of the first and second layers of magnetic material. The third layer of magnetic material can be formed with a width larger than the cell width to increase the magnetic width of the cell and reduce the magnetic field required to switch states.

    摘要翻译： 具有增加的GMR比率的磁存储单元包括平行堆叠的第一和第二层磁性材料，覆盖关系并由夹在第一和第二磁性层之间的非磁性材料层分开。 第一层和第二层中的每一层可在第一和第二磁状态之间切换，并且形成为通过施加基本相等的磁场来切换状态。 磁性材料的第三层位于第一和第二磁性层之一附近，以改变切换第一和第二磁性层之一的状态所需的磁场的量。 可以形成具有大于单元宽度的宽度的第三层磁性材料以增加单元的磁宽度并减小开关状态所需的磁场。

    Magnetic memory cell with increased GMR ratio
    85.
    发明授权
    Magnetic memory cell with increased GMR ratio 失效
    具有增加的GMR比的磁记忆体

    公开(公告)号：US5774394A

    公开(公告)日：1998-06-30

    申请号：US862090

    申请日：1997-05-22

    申请人： Eugene Chen ,  Saied N. Tehrani ,  Steven A. Voight

    发明人： Eugene Chen ,  Saied N. Tehrani ,  Steven A. Voight

    IPC分类号： G11C11/16 ,  H01F10/32 ,  G11C11/15

    CPC分类号： B82Y25/00 ,  G11C11/16 ,  H01F10/3268

    摘要： A first layer of non-magnetic material is positioned on a layer of an oxide of a magnetic material (e.g. NiO). First and second layers of magnetic material are stacked in parallel, overlying relationship and separated by a second layer of non-magnetic material sandwiched therebetween to form a magnetic memory cell. The magnetic memory cell is positioned on the first layer of nonmagnetic material so as to sandwich the first nonmagnetic layer between the oxide and the first magnetic layer of the cell. The first layer of non-magnetic material has a thickness (e.g. approximately 7 .ANG.) which prevents the oxide from pinning the first layer of magnetic material and adapts the first layer of magnetic material to the layer of oxide so as to increase the GMR ratio of the magnetic memory cell.

    摘要翻译： 第一层非磁性材料位于磁性材料（例如NiO）的氧化物层上。 第一和第二层磁性材料层叠在一起，叠置关系并被夹在其间的非磁性材料的第二层隔开以形成磁存储单元。 磁存储单元位于非磁性材料的第一层上，以将第一非磁性层夹在电池的氧化物和第一磁性层之间。 第一层非磁性材料具有厚度（例如约7安格姆），其防止氧化物钉住第一层磁性材料并使第一层磁性材料适应于氧化物层，以便增加GMR比值 磁性存储单元。

    Memory cell structure in a magnetic random access memory and a method for fabricating thereof
    86.
    发明授权
    Memory cell structure in a magnetic random access memory and a method for fabricating thereof 失效
    磁性随机存取存储器中的存储单元结构及其制造方法

    公开(公告)号：US5732016A

    公开(公告)日：1998-03-24

    申请号：US674387

    申请日：1996-07-02

    申请人： Eugene Chen ,  Saied N. Tehrani ,  Herbert Goronkin

    发明人： Eugene Chen ,  Saied N. Tehrani ,  Herbert Goronkin

    IPC分类号： H01L43/08 ,  G11C11/14 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  G11C11/00

    CPC分类号： G11C11/14 ,  H01L27/222 ,  H01L43/08

    摘要： A magnetic random access memory (MRAM) cell structure (10) with a portion of giant magnetoresistive (GMR) material (11), around which single or multiple word line (12) is wound, is provided. Magnetic field generated by word current (13, 14) superimposed in portion of GMR material (11) so that a total strength of magnetic field increases proportionally. The same word current is passed through the portion of GMR material (11) multiple times, thus producing equivalent word field by many times as large word current in a conventional MRAM cell.

    摘要翻译： 提供具有卷绕单字或多字线（12）的巨磁阻（GMR）材料（11）的一部分的磁随机存取存储器（MRAM）单元结构（10）。 由字电流（13,14）产生的磁场叠加在GMR材料（11）的一部分中，使得磁场的总强度成比例地增加。 相同的字电流多次通过GMR材料（11）的部分，从而在常规MRAM单元中产生大字电流多次的等效字场。

    Method for manufacturing magnetic storage device and magnetic storage device
    88.
    发明授权
    Method for manufacturing magnetic storage device and magnetic storage device 有权
    磁存储装置和磁存储装置的制造方法

    公开(公告)号：US08546151B2

    公开(公告)日：2013-10-01

    申请号：US12528854

    申请日：2008-02-25

    申请人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

    发明人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/228

    摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

    摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

    Systems and methods for creating photobooks
    90.
    发明授权
    Systems and methods for creating photobooks 有权
    用于创建照相簿的系统和方法

    公开(公告)号：US08396326B2

    公开(公告)日：2013-03-12

    申请号：US13418268

    申请日：2012-03-12

    申请人： Eugene Chen ,  Trynne Anne Miller ,  Su Mien Quek

    发明人： Eugene Chen ,  Trynne Anne Miller ,  Su Mien Quek

    IPC分类号： G06K9/32

    CPC分类号： G06F3/0482 ,  H04N1/00132 ,  H04N1/00196 ,  H04N1/00442 ,  H04N1/00448 ,  H04N1/0045 ,  H04N1/00453 ,  H04N1/00456 ,  H04N1/00461 ,  H04N2101/00

    摘要： A method for producing a photo album includes providing a library of page layouts, selecting a first group of one or more images to be placed in the first page of the photo album, selecting a second group of one or more images to be placed in the second page of the photo album, graphically displaying the first group of one or more images within a first border that represents a first page, graphically displaying the second group of one or more images within a second border that represents a second page, automatically selecting a first page layout from the library of page layouts, and automatically placing the first group of one or more images into the one or more image receiving areas in the first page layout to produce the first page in the photo album.

    摘要翻译： 一种用于制作相册的方法包括提供页面布局库，选择要放置在相册的第一页中的一个或多个图像的第一组，选择要放置在相册中的一个或多个图像的第二组 在相册的第二页面上，图形地显示表示第一页面的第一边框内的一个或多个图像的第一组，以图形方式显示代表第二页面的第二边框内的第二组一个或多个图像，自动选择 从页面布局的库中的第一页面布局，并且自动地将第一组一个或多个图像放置到第一页面布局中的一个或多个图像接收区域中以产生相册中的第一页。