摘要:
Compositions for making alpha-alumina supports for, for example, inorganic membranes are described. Methods for controlling the alumina and pore former particle sizes and other process variables are described which facilitate desirable porosity, pore distribution and strength characteristics of the resulting alpha-alumina inorganic membrane supports.
摘要:
A method and apparatus for selecting optimal operating conditions of a genset is disclosed. The genset includes an engine coupled to an electrical power generator, the genset having a plurality of operating points each including an engine speed value and a generator electrical power output value, and having a plurality of cost values associated with operating the genset at respective operating points. The method involves selecting a set of operating points from the plurality of operating points such that a sum of cost values associated with operating points in the set is minimized and such that the engine speed and generator electrical power output values of the operating points in the set increase or decrease monotonically.
摘要:
The accuracy of a library of simulated-diffraction signals for use in optical metrology of a structure formed on a wafer is evaluated by utilizing an identity relationship inherent to simulated diffraction signals. Each simulated diffraction signal contains at least one set of four reflectivity parameters for a wavelength and/or angle of incidence. One of the four reflectivity parameters is selected. A value for the selected reflectivity parameter is determined using the identity relationship and values of the remaining three reflectivity parameters. The determined value for the selected reflectivity parameter is compared to the value in the obtained set of four reflectivity parameters to evaluate and improve the accuracy of the library. The identity relationship can also be used to reduce the data storage in a library.
摘要:
In generating a profile model to characterize a structure to be examined using optical metrology, a view canvas is displayed, with the profile model being generated displayed in the view canvas. A profile shape palette is displayed adjacent to the view canvas. A plurality of different profile shape primitives is displayed in the profile shape palette. Each profile shape primitive in the profile shape palette is defined by a set of profile parameters. When a user selects a profile shape primitive from the profile shape palette, drags the selected profile shape primitive from the profile shape palette, and drops the selected profile shape primitive into the view canvas, the selected profile shape primitive is incorporated into the profile model being generated and displayed in the view canvas.
摘要:
This invention provides compositions, organisms and methodologies employing a novel human protein kinase, MCRK1. The novel human kinase has sequence homology to rat myotonic dystrophy kinase-related Cdc42 binding kinase (MRCK) alpha. The gene encoding the novel kinase is localized in locus 11q13 of human chromosome 11. The novel protein kinase comprises multiple functional/structural domains that include a kinase domain, a pkinase_C domain, a DAG-PE binding domain, and a CNH domain. The sequence and structure similarity between the novel human protein and rat MRCK alpha indicates that the novel human protein may function as a downstream effector of Cdc42 in cytoskeleton reorganization.
摘要:
The accuracy of a library of simulated-diffraction signals for use in optical metrology of a structure formed on a wafer is evaluated by utilizing an identity relationship inherent to simulated diffraction signals. Each simulated diffraction signal contains at least one set of four reflectivity parameters for a wavelength and/or angle of incidence. One of the four reflectivity parameters is selected. A value for the selected reflectivity parameter is determined using the identity relationship and values of the remaining three reflectivity parameters. The determined value for the selected reflectivity parameter is compared to the value in the obtained set of four reflectivity parameters to evaluate and improve the accuracy of the library. The identity relationship can also be used to reduce the data storage in a library.
摘要:
Multi-media Memory Card (MMC) devices, Secure Digital (SD) devices, and Secure Digital Input Output (SDIO) devices connected to a single host controller with signals multiplexed to allow simultaneous activation of more than one device at a time.
摘要:
Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.
摘要:
Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.