Abstract:
Capacitance sensing circuits and methods are provided. A dual mode capacitance sensing circuit includes a capacitance-to-voltage converter having an amplifier and an integration capacitance coupled between an output and an inverting input of the amplifier, and a switching circuit responsive to mutual mode control signals for a controlling signal supplied from a capacitive touch matrix to the capacitive to voltage converter in a mutual capacitance sensing mode and responsive to self mode control signals for controlling signals supplied from the capacitive touch matrix to the capacitance-to-voltage converter in a self capacitance sensing mode, wherein the capacitance sensing circuit is configurable for operation in the mutual capacitance sensing mode or the self capacitance sensing mode.
Abstract:
An in-cell touchscreen panel includes columns of transmit electrodes and rows of sensing electrodes, wherein each row of sensing electrodes comprises a first subset of sensing electrodes coupled to control circuitry via a first subset of receiving traces and a second subset of sensing electrodes coupled to the control circuitry via a second subset of receiving traces. To enable multi-touch functionality, the in-cell touchscreen panel operates in a scanning mode where capacitance is measured at each node where the sensing electrodes intersect the transmit electrodes. During the scanning mode, the control circuitry senses the first and second subsets of receiving traces while applying drive signals to pairs of transmit electrodes. After a drive signal has been applied to each of the transmit electrodes, each of the nodes are measured to detect a capacitance. This capacitance is indicative of a user touch on the in-cell touchscreen panel.
Abstract:
A chip package includes a substrate, an integrated circuit proximate a top surface of the substrate, and a cap comprising encapsulant that encapsulates the integrated circuit on at least a portion of the top surface of the substrate. The chip package further includes at least one extension feature positioned on at least a portion of the top surface of the substrate. The at least one extension feature also comprises the encapsulant and extends from the cap to a perimeter of the substrate.
Abstract:
A micro-electro-mechanical system (MEMS) actuator circuit and method. The circuit includes a current mirror, a voltage divider having an interior contact and coupled between the mirror output and a potential, an operational amplifier having an input coupled to the interior contact and a switch having input/output contacts separately coupled to the amplifier output and the mirror input and having a switch control. The amplifier output can be coupled to a digital control circuit which can be coupled to the switch control contact and to a digital to analog circuit (DAC) which can be coupled to the digital control circuit and to another amplifier input. An enable signal at the switch control couples the switch input/output contacts together. The capacitance of a MEMS capacitor coupled to the mirror output is determined by measurement of time for the amplifier output to switch from one level to another following a change in DAC output potential.
Abstract:
A Yule-Walker based, low-complexity voice activity detector (VAD) is disclosed. An input signal is typically noisy speech (i.e., corrupted with, for example, babble noise). In one embodiment, a first initialization stage of the VAD computes an occurrence of a silent period within the input signal and the AR parameters. The VAD could accordingly compute a tentative adaptive threshold and output hypothesis H1 (which means speech is present) during this stage. During the second initialization stage, the VAD generally builds a database of associated values and computes the adaptive threshold accordingly. The second initialization stage could also output tentative VAD decisions based on the tentative threshold computed in the first initialization stage. Finally, the VAD periodically retrains or updates AR parameters, threshold values and/or the database and outputs VAD decisions accordingly.
Abstract:
A method for integrating a bipolar injunction transistor in a semiconductor chip includes the steps of forming an intrinsic base region of a second type of conductivity extending in the collector region from a main surface through an intrinsic base window of the sacrificial insulating layer, forming an emitter region of the first type of conductivity extending in the intrinsic base region from the main surface through an emitter window of the sacrificial insulating layer, removing the sacrificial insulating layer, forming an intermediate insulating layer on the main surface, and forming an extrinsic base region of the second type of conductivity extending in the intrinsic base region from the main surface through an extrinsic base window of the intermediate insulating layer.
Abstract:
A first input of a differential circuit is coupled to a coil tap for a first phase of a multi-phase brushless DC motor. The first phase is associated with an electrically floating coil. A second input of the differential circuit is coupled to a virtual center tap. A divider circuit is coupled between coil taps for other phases of the multi-phase brushless DC motor to define a virtual center tap. The other phases are phases actuated for motor operation when the first phase is electrically floating. The coil tap for the first phase is electrically isolated from the virtual center tap. The differential circuit performs a comparison of the voltage at the coil tap for the first phase to the voltage at the virtual center tap to generate a back EMF signal.
Abstract:
In an embodiment, an apparatus includes a determiner, converter, adapter, and modifier. The determiner is configured to generate a representation of a difference between a first frequency at which a first signal is sampled and a second frequency at which a second signal is sampled, and the converter is configured to generate a second sample of the first signal at a second time in response to the representation and a first sample of the first signal at a first time. The adapter is configured to generate a sample of a modifier signal in response to the second sample of the first signal, and the modifier is configured to generate a modified sample of the second signal in response to a sample of the second signal and the sample of the modifier signal. For example, such an apparatus may be able to reduce the magnitude of an echo signal in a system having an audio pickup (e.g., a microphone) near an audio output (e.g., a speaker).
Abstract:
An image sensor device may include a bottom interconnect layer, an image sensing IC above the bottom interconnect layer and coupled thereto, and an adhesive material on the image sensing IC. The image sensor device may include an IR filter layer above the lens layer, and an encapsulation material on the bottom interconnect layer and surrounding the image sensing IC, the lens layer, and the IR filter layer. The image sensor device may include a top contact layer above the encapsulation material and including a dielectric layer, and a contact thereon, the dielectric layer being flush with adjacent portions of the IR filter layer.
Abstract:
A PNP apparatus may include a robotic arm, and a PNP tool head carried by the robotic arm. The PNP tool head may include a body configured to apply bonding pressure to a first area of an electronic device, and a pick-up tip movable between an extended position and a retracted position relative to the body as the pick-up tip rests against a second area of the electronic device. The pick-up tip may define a vacuum passageway therethrough to couple a vacuum source to the second area of the electronic device.