公开(公告)号：US20140053896A1

公开(公告)日：2014-02-27

申请号：US14002686

申请日：2012-02-22

Applicant: Stefan Jost ,  Jorg Palm

Inventor： Stefan Jost ,  Jorg Palm

IPC: H01L31/18 ,  H01L31/065

CPC classification number: H01L31/18 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0326 ,  H01L31/065 ,  H01L31/072 ,  Y02E10/50

Abstract: A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type Cu2ZnSn(S,Se)4 is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor Cu2ZnSn(S,Se)4 on a body is described.

Abstract translation: 描述了由Cu2ZnSn（S，Se）4类型的pentanary kesterite /锡酸盐组成的化合物半导体的制造方法。 该方法具有以下步骤：产生由第一前体层和第二前体层组成的至少一个前体层叠层; 在处理室中热处理所述至少一个前体层堆叠; 以及在所述至少一个前体层堆叠的热处理期间将至少一种工艺气体供给到所述处理室中。 此外，描述了具有由主体上的五元化合物半导体Cu 2 ZnSn（S，Se）4组成的吸收体的薄膜太阳能电池。

公开(公告)号：US20130316490A1

公开(公告)日：2013-11-28

申请号：US13976179

申请日：2011-12-28

Applicant: Yasuhiro Aida ,  Susanne Siebentritt

Inventor： Yasuhiro Aida ,  Susanne Siebentritt

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02614 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar cell according to the present invention includes as a light absorption layer a p-type semiconductor layer having a gradient of X/(In+X) ratios in a film thickness direction and containing an Ib group element, In, an element X, and a VIb group element, wherein a ratio C between values of an X/(In+X) ratio A of an uppermost surface of an p-type semiconductor layer and an X/(In+X) ratio B at a depth at which a smallest X/(In+X) ratio in a film is exhibited is represented by Expressions (1) and (2): C=A/B  (1); and 1.1

Abstract translation: 根据本发明的太阳能电池包括作为光吸收层的具有膜厚度方向上的X /（In + X）比率的p型半导体层，并且包含Ib族元素In，元素X， 和VIb族元素，其中p型半导体层的最上表面的X /（In + X）比A与X /（In + X）比B之间的比率C在其深度处 表现为（1）和（2）表示膜中最小的X /（In + X）比：C = A / B（1） 和1.1

公开(公告)号：US08586457B1

公开(公告)日：2013-11-19

申请号：US13595730

申请日：2012-08-27

Applicant: Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

Inventor： Haifan Liang ,  Sang Lee ,  Wei Liu ,  Sandeep Nijhawan ,  Jeroen Van Duren

IPC: H01L21/20

CPC classification number: H01L31/065 ,  H01L31/0322 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541

Abstract: A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.

Abstract translation: 一种制造高效CIGS太阳能电池的方法，包括从约25原子％至约66原子％之间的Ga浓度的溅射靶中沉积Ga浓度（Ga /（Ga + In）= 0.25-0.66）。 此外，该方法包括与导致高效率的高温退火工艺相结合的高温硒化工艺。

公开(公告)号：US20130244372A1

公开(公告)日：2013-09-19

申请号：US13607855

申请日：2012-09-10

Applicant: Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

Inventor： Bahman Hekmatshoar-Tabari ,  Devendra K. Sadana ,  Ghavam G. Shahidi ,  Davood Shahrjerdi

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/065 ,  H01L31/068 ,  H01L31/074 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, and epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer.

Abstract translation: 一种形成光电器件的方法，包括提供具有第一导电类型的第一晶体半导体材料的吸收层，以及外延生长与第一导电类型相反的第二导电类型的第二晶体半导体层。 第一导电类型可以是p型，第二导电类型可以是n型，或者第一导电类型可以是n型，第二导电类型可以是p型。 外延生长第二晶体半导体层的温度不超过500℃。触点形成为与吸收层和第二晶体半导体层电连通。

公开(公告)号：US20130164916A1

公开(公告)日：2013-06-27

申请号：US13595888

申请日：2012-08-27

Applicant: Haifan Liang ,  Jeroen Van Duren

Inventor： Haifan Liang ,  Jeroen Van Duren

IPC: H01L21/20

CPC classification number: H01L31/0323 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/065 ,  Y02E10/541

Abstract: Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Ag to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for utilizing at least one of Na, Mg, K, or Ca to increase the band gap at the front surface of the absorber layer.

Abstract translation: 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Ag增加吸收层前表面带隙的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了利用Na，Mg，K或Ca中的至少一种来增加吸收层前表面的带隙的方法。

公开(公告)号：US20130157408A1

公开(公告)日：2013-06-20

申请号：US13331793

申请日：2011-12-20

Applicant: Haifan Liang

Inventor： Haifan Liang

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02568 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/065 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A gallium-containing alloy is formed on the light-receiving surface of a CIGS absorber layer, and, in conjunction with a subsequent selenization or anneal process, is converted to a gallium-rich region at the light-receiving surface of the CIGS absorber layer. A second gallium-rich region is formed at the back contact surface of the CIGS absorber layer during selenization, so that the CIGS absorber layer has a double-graded gallium concentration that increases toward the light-receiving surface and toward the back contact surface of the CIGS absorber layer. The double-graded gallium concentration advantageously produces a double-graded bandgap profile for the CIGS absorber layer.

Abstract translation: 在CIGS吸收层的光接收表面上形成含镓合金，并且随后的硒化或退火工艺在CIGS吸收层的光接收表面处转化为富镓区域 。 在硒化期间，在CIGS吸收体层的背面接触表面形成第二富含镓区域，使得CIGS吸收层具有双重梯度的镓浓度，朝向光接收表面朝向接收面的后接触面增加 CIGS吸收层。 双分级镓浓度有利地产生CIGS吸收层的双梯度带隙分布。

公开(公告)号：US20130125966A1

公开(公告)日：2013-05-23

申请号：US13807263

申请日：2011-06-30

Applicant: William N. Reining

Inventor： William N. Reining

IPC: H01L31/065

CPC classification number: H01L31/065 ,  H01L31/03529 ,  H01L31/047 ,  H01L31/0543 ,  Y02E10/52

Abstract: A solar cell is disclosed. The solar cell includes a p-type doped semiconductor material and an n-type doped semiconductor material laterally adjacent to the p-type material. The p-type material and n-type material form a stripped structure with finite depth, and form a vertically structured diode at the junction of the p-type material and n-type material. The vertically structured diode has its depth determined by a multiple of an electromagnetic skin depth of at least one of the p-type material or n-type material, and a width of a depletion layer is controlled by a doping concentration of the p-type and n-type material. A solar cell having a refractory material forming an optical element provided on a sun facing surface of the solar cell and adapted to direct photons to a depletion region of a vertically structured photodiode is also disclosed.

Abstract translation: 公开了一种太阳能电池。 太阳能电池包括p型掺杂半导体材料和与p型材料横向相邻的n型掺杂半导体材料。 p型材料和n型材料形成具有有限深度的剥离结构，并且在p型材料和n型材料的接合处形成垂直结构的二极管。 垂直结构的二极管的深度由p型材料或n型材料中的至少一种的电磁表层深度的倍数确定，并且耗尽层的宽度由p型掺杂浓度 和n型材料。 还公开了一种具有形成光学元件的耐火材料的太阳能电池，该太阳能电池设置在太阳能电池的面向太阳的表面上并且适于将光子引导到垂直结构的光电二极管的耗尽区。

公开(公告)号：US08426725B2

公开(公告)日：2013-04-23

申请号：US12967005

申请日：2010-12-13

Applicant: Lawrence M. Woods ,  Joseph H. Armstrong

Inventor： Lawrence M. Woods ,  Joseph H. Armstrong

IPC: H01L31/00

CPC classification number: H01L31/0304 ,  H01L31/043 ,  H01L31/0465 ,  H01L31/065 ,  H01L31/1896 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a I-III-VI absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III-V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack. In an embodiment, the bonding agent is a polymeric adhesive containing conductive nanostructures. In an embodiment the III-V absorber is grown on single crystal, substrate. A method for forming the device is described.

公开(公告)号：US20130081681A1

公开(公告)日：2013-04-04

申请号：US13251453

申请日：2011-10-03

Applicant: Chien-Ming WU ,  Wu-Tsung LO

Inventor： Chien-Ming WU ,  Wu-Tsung LO

IPC: H01L31/06

CPC classification number: H01L31/065 ,  H01L31/06875 ,  Y02E10/544

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises a substrate; a first photovoltaic cell disposed over the substrate comprising a base layer having a first conductivity type; an emitter layer having a second conductivity type; a window layer having the second conductivity type; an intermediate structure between the emitter layer and the window layer having the second conductivity type, and comprising a first portion adjacent to the emitter layer and a second portion on the first portion. The first portion comprises a bandgap energy higher than that of the emitter layer and the intermediate structure is substantially lattice matched with the emitter layer.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括基板; 设置在所述基板上的第一光伏电池，包括具有第一导电类型的基极层; 具有第二导电类型的发射极层; 具有第二导电类型的窗口层; 在发射极层和具有第二导电类型的窗口层之间的中间结构，并且包括与发射极层相邻的第一部分和在第一部分上的第二部分。 第一部分包括比发射极层高的带隙能量，并且中间结构与发射极层基本上晶格匹配。

公开(公告)号：US20120145231A1

公开(公告)日：2012-06-14

申请号：US12967005

申请日：2010-12-13

Applicant: Lawrence M. Woods ,  Joseph H. Armstrong

Inventor： Lawrence M. Woods ,  Joseph H. Armstrong

IPC: H01L31/06 ,  H01L31/0352

CPC classification number: H01L31/0304 ,  H01L31/043 ,  H01L31/0465 ,  H01L31/065 ,  H01L31/1896 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III-V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack. In an embodiment, the bonding agent is a polymeric adhesive containing conductive nanostructures. In an embodiment the III-V absorber is grown on single crystal, substrate. A method for forming the device is described.

Abstract translation: 光伏（PV）器件在衬底上具有至少一个下部PV电池，该电池具有金属背接触，以及吸收体和透明导体层。 上部PV电池被电连接到下部PV电池，以形成堆叠。 上PV电池具有III-V吸收层和接合层，电池通过具有导电纳米结构或低温焊料填料的透明导电粘合剂粘合。 上部PV电池没有基板。 一个实施例具有图案化导体的至少一种形状，其与下电池的上部和下部接触的顶部接触，以将它们串联在一起。 在一个实施例中，图案化导体的形状从下电池的多余区域吸取电流到上电池，在替代实施例中，图案化导体的形状将I-III-VI电池不连接在串联串中的上电池下方， 与至少一个堆叠平行。 在一个实施方案中，粘合剂是含有导电纳米结构的聚合物粘合剂。 在一个实施方案中，III-V吸收剂在单晶衬底上生长。 描述了用于形成装置的方法。