Abstract:
A vertical cavity surface emitting laser includes an active layer between a first reflector and a second reflector and at least either the first reflector or the second reflector includes a two-dimensional photonic crystal. The two-dimensional photonic crystal has a structure 106 showing an ununiform effective refractive index distribution in the plane of the reflector to realize both a high reflectivity and transverse mode control at the same time.
Abstract:
According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing the conductive contacts.
Abstract:
A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any stimulated-emission made to undergo amplifying oscillation within the inventions phase-conjugating resonator. Resulting in stabilized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps.
Abstract:
For increasing the power emitted by surface emitting lasers and for improving the spatial coherence of the laser beam, emitted in particular by disk lasers, microchip lasers and VCSELs having a relatively wide emitting area, the invention proposes to select a low order transverse cavity mode by means of a mirror structure (12) of high reflectivity, and of high angular selectivity. The mirror structure comprises a multilayer (14) receiving the optical beam (24) and a resonant grating mirror (16) following the multilayer and arranged for highly reflecting the optical beam in a narrow angular range at each side of a determined incidence angle.
Abstract:
Disclosed is a semiconductor laser. The semiconductor laser includes a semiconductor chip that includes an active layer and emits radiation in a main radiating direction. The active layer is structured in a direction perpendicular to the main radiating direction to reduce heating of the semiconductor chip by spontaneously emitted radiation, and the active layer has the form of a mesa that comprises side walls that form a resonator in such a way as to reduce the spontaneous emission in the active layer in a direction perpendicular to the main radiating direction.
Abstract:
A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any stimulated-emission made to undergo amplifying oscillation within the inventions phase-conjugating resonator. Resulting in stablized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps.
Abstract:
A bottom-emitting nitride light-emitting device with enhanced light extraction efficiency is provided. The increased light output is provided by the reflector that redirects upward-going light towards the bottom output. A mesh contact area, in one form, spreads current across the entire carrier injection area without occupying the entire top surface of the device.
Abstract:
An integrated circuit (and optical transceiver module) includes an optoelectronic thyristor device formed within a resonant cavity on a substrate, and circuitry integrally formed on the substrate that dynamically switches the thyristor between a transmit mode configuration and a receive mode configuration. In the transmit mode configuration, the thyristor is modulated between a non-lasing state and a lasing state in accordance with an input digital electrical signal. In the receive mode configuration, the thyristor device is modulated between a non-lasing OFF state and a non-lasing ON state in accordance with an input digital optical signal that is injected into the resonant cavity to thereby produce an output digital electrical data signal that corresponds to the input digital optical signal. The integrated circuit (and optical transceiver module) can be used in optical fiber applications as well as free-space applications.
Abstract:
There is provided a laser. The laser includes a substrate, a first Bragg reflector layer sequence on the substrate, an active layer sequence on the first Bragg reflector layer sequence, a second Bragg reflector layer sequence on the active layer sequence, and a voltage source for applying a voltage via the active layer sequence to generate a beam of laser radiation. At least one of the first Bragg reflector layer sequence, the active layer sequence or the second Bragg reflector layer sequence includes a layer having a periodic pattern positioned in a direction of the beam to stabilize a polarization of the beam.
Abstract:
A vertical cavity surface emitting laser includes an active layer between a first reflector and a second reflector and at least either the first reflector or the second reflector includes a two-dimensional photonic crystal. The two-dimensional photonic crystal has a structure 106 showing an ununiform effective refractive index distribution in the plane of the reflector to realize both a high reflectivity and transverse mode control at the same time.