公开(公告)号：US06614821B1

公开(公告)日：2003-09-02

申请号：US09633230

申请日：2000-08-04

申请人： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

发明人： Naoto Jikutani ,  Takashi Takahashi ,  Shunichi Sato

IPC分类号： H01S500

CPC分类号： H01S5/2202 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3434

摘要： A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

摘要翻译： 激光二极管包括具有GaAs晶格常数或GaAs和GaP之间的基板，在基板上形成的AlGaInP的第一包层，形成在第一包层上的GaInAsP的有源层，形成在第一包层上的GaInP的蚀刻停止层 有源层，形成在蚀刻阻挡层上的一对电流阻挡区域，以便在其间限定条带区域，形成在一对电流阻挡区上的覆盖蚀刻阻挡层的AlGaInP光波导层 以及形成在光波导层上的AlGaInP的第二包覆层，其中，所述电流阻挡区域的Al含量基本上与第二包层的Al含量相同。

公开(公告)号：US20020044584A1

公开(公告)日：2002-04-18

申请号：US09981258

申请日：2001-10-18

申请人： FUJI PHOTO FILM CO., LTD.

发明人： Toshiaki Fukunaga

IPC分类号： H01S005/00

CPC分类号： B82Y20/00 ,  H01S5/2202 ,  H01S5/2209 ,  H01S5/3403 ,  H01S5/34373

摘要： In a semiconductor laser device having an InGaAsP compressive strain quantum well active layer, an InGaAsP first upper optical waveguide layer formed on the active layer, and a current confinement layer which is formed above the first upper optical waveguide layer and includes a stripe groove. An AlGaAs second upper optical waveguide layer having an approximately identical refractive index to that of the first upper optical waveguide layer covers the current confinement layer and the stripe groove. The product of the strain and the thickness of the active layer does not exceed 0.25 nm. All the layers other than the compressive strain quantum well active layer lattice-match with GaAs. An AlGaAs or InGaAsP upper cladding layer formed above the second upper optical waveguide layer has an approximately identical refractive index to that of a lower cladding layer formed under the active layer.

摘要翻译： 在具有InGaAsP压缩应变量子阱有源层的半导体激光器件中，形成在有源层上的InGaAsP第一上部光波导层和形成在第一上部光波导层上方并包括条纹槽的电流限制层。 具有与第一上光波导层的折射率大致相同的折射率的AlGaAs第二上光波导层覆盖电流限制层和条纹槽。 有源层的应变和厚度的乘积不超过0.25nm。 除了压应变量子阱活性层以外的所有层与GaAs晶格匹配。 形成在第二上部光波导层之上的AlGaAs或InGaAsP上部包层具有与在有源层下形成的下部包层的折射率大致相同的折射率。

公开(公告)号：US06335215B1

公开(公告)日：2002-01-01

申请号：US09556894

申请日：2000-04-20

申请人： Rong-Heng Yuang

发明人： Rong-Heng Yuang

IPC分类号： H01L2100

CPC分类号： H01S5/2202 ,  H01S5/06226 ,  H01S5/2224 ,  H01S5/2231

摘要： This specification discloses a structure of a ridge waveguide semiconductor laser and a self-alignment method of making the same. The structure comprises a ridge whose top surface is exposed to have direct contact with a metal electrode layer so as to lower the ohmic contact resistance. Two side walls of the ridge and two channels are covered by a dielectric layer with high thermal conductivity, and the peripheral platform surfaces are covered by another dielectric layer with low capacitance. Therefore, the obtained laser diode has features such as high heat dissipation and low capacity. In the manufacturing process, the ridge can have good ohmic contact with metal electrodes without the need of aligned contact holes. The end-point detector is used in the key step to perform precision control. A reactive ion etching (RIE) machine can be employed in the processes to perform large area homogeneous etching so that the laser devices require a lower manufacturing cost but obtain a higher yield. Also, the manufacturing process becomes more efficient.

摘要翻译： 本说明书公开了脊波导半导体激光器的结构以及制造其的自对准方法。 该结构包括其顶表面暴露以与金属电极层直接接触的脊，以降低欧姆接触电阻。 脊和两个通道的两个侧壁被具有高导热性的介电层覆盖，并且外围平台表面被具有低电容的另一个介电层覆盖。 因此，所获得的激光二极管具有散热高，容量低等特点。 在制造过程中，脊可以与金属电极具有良好的欧姆接触，而不需要对准的接触孔。 在关键步骤中使用终点检测器进行精度控制。 在该方法中可以采用反应离子蚀刻（RIE）机器来进行大面积均匀蚀刻，使得激光器件需要较低的制造成本，但获得更高的产量。 此外，制造过程变得更有效率。

公开(公告)号：US06238947B1

公开(公告)日：2001-05-29

申请号：US09465400

申请日：1999-12-17

申请人： Yukio Shakuda

发明人： Yukio Shakuda

IPC分类号： H01L2100

CPC分类号： H01S5/32341 ,  H01L33/02 ,  H01L33/145 ,  H01L33/32 ,  H01S5/2202

摘要： A structure consisting of a substrate and a gallium nitride based compound semiconductor formed on the substrate, includes: a light-emitting layer forming portion consisting at least of a semiconductor layer of a first conductivity type (an n-type cladding layer) and a semiconductor layer of a second conductivity type (a p-type cladding layer); a current blocking layer of the first conductivity type, which is formed within a semiconductor layer of the second conductivity type and in close proximity to the light-emitting layer forming portion, and a portion of which is removed in a region where a current flows; and electrodes connected to the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, respectively. In a semiconductor light-emitting device using GaN based compound semiconductors, this structure allows the current blocking layer for defining a current injection region to be formed in close proximity to the light-emitting layer, thus reducing leakage current into regions outside a pattern.

摘要翻译： 由基板和形成在基板上的氮化镓基化合物半导体构成的结构包括：至少由第一导电类型的半导体层（n型包覆层）和半导体层构成的发光层形成部分 第二导电型层（p型包覆层）; 第一导电类型的电流阻挡层，其形成在第二导电类型的半导体层中并且紧邻发光层形成部分，并且其一部分在电流流动的区域中被去除; 以及分别连接到第一导电类型的半导体层和第二导电类型的半导体层的电极。 在使用了基于GaN的化合物半导体的半导体发光器件中，这种结构允许用于限定电流注入区域的电流阻挡层形成在靠近发光层的位置，从而减少了泄漏电流进入图案之外的区域。

公开(公告)号：US4835783A

公开(公告)日：1989-05-30

申请号：US41483

申请日：1987-04-23

申请人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

发明人： Takahiro Suyama ,  Toshiro Hayakawa ,  Kohsei Takahashi ,  Masafumi Kondo ,  Saburo Yamamoto

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/34 ,  H01S5/343 ,  H01S5/40

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/2202 ,  H01S5/3428 ,  H01S5/3432

摘要： A semiconductor device is formed by sequentially forming a first clad layer, active layer, second clad layer, and cap layer from, for example, an AlGaAs layer with an AlAs mixing ratio of .gtoreq.0.4, on a substrate made of GaAs or the like by MBE, MOCVD or another high precision growth process. Then AlGaAs layer is selectively removed only in the vicinity of formed ridges, and in this part, grooves on two stripes are formed from the cap layer surface, leaving the second clad layer with an intact thickness of, for example, only 3000 .ANG.. An insulation layer made of, for example, SiN is then formed in the groove area and the AlGaAs layer region, thereby creating a current stripe structure, in which only two grooves provide for current passages, that is, the light-emitting regions. In this structure, the thickness of the mesa pattern (ridge part) between the two grooves may be a minimum limit and the processing precision may be improved, while by properly selecting the thickness of the AlGaAs layer, a sufficiently large distance may be set between the mount surface and the active layer, so that the problem of solder climbing-up along the device end surface may be prevented. When the AlAs mixing ratio is controlled at 0.4 in the AlGaAs layer, it is possible to easily remove portions thereof selectively, by using hydrogen fluoride.

摘要翻译： 半导体器件通过从例如AlAs混合比为> / = 0.4的AlGaAs层顺序地形成第一覆盖层，有源层，第二覆盖层和覆盖层而形成，所述AlGaAs层在由GaAs制成的衬底上或 像MBE，MOCVD或另一个高精度增长过程。 然后，仅在形成的脊的附近选择性地除去AlGaAs层，并且在该部分中，由盖层表面形成两个条纹上的槽，留下第二覆层的完整厚度例如仅为3000安。 然后在沟槽区域和AlGaAs层区域中形成例如由SiN制成的绝缘层，从而产生电流条纹结构，其中只有两个沟槽提供电流通路，即发光区域。 在这种结构中，两个槽之间的台面图案（脊部）的厚度可以是最小限度，并且可以提高加工精度，而通过适当地选择AlGaAs层的厚度，可以设置足够大的距离 安装表面和有源层，从而可以防止沿着器件端面向上爬焊的问题。 当在AlGaAs层中AlAs混合比控制在0.4时，可以通过使用氟化氢来选择性地容易地去除它们的部分。

公开(公告)号：US4791635A

公开(公告)日：1988-12-13

申请号：US13437

申请日：1987-02-11

申请人： Werner Schairer ,  Jochen Gerner

发明人： Werner Schairer ,  Jochen Gerner

IPC分类号： H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2202 ,  H01S5/16 ,  H01S5/2231

摘要： The invention relates to a heterostructure semiconductor laser diode with a layer sequence formed on a substrate, wherein the layer sequence includes a laser-active zone arranged between layers of respectively opposite conductivity types, and an additional layer and having a cover layer disposed thereon, and both of the same conductivity type as the substrate, formed on the side of the layer sequence facing away from the substrate, and wherein the cover layer includes an oppositely doped semiconductor area which, in a stripe-shaped surface region extending perpendicularly to the exit surface of the laser radiation in the area of the axis of symmetry, and through a v-groove-shaped recess penetrates, the boundary plane between the cover layer and the adjacent additional layer and extends into the layer located thereunder, whereby the current flowing in the forward direction of the semiconductor laser diode is confined to a narrow, strip-shaped area of the laser-active zone. Higher output power and greater long-term stability are attained by the v-groove-shaped recess being made shorter in its longitudinal dimensions than the resonator length and by the laser-active zone being simultaneously highly doped.

摘要翻译： 本发明涉及一种具有形成在衬底上的层序列的异质结构半导体激光二极管，其中该层序列包括布置在相对导电类型的层之间的激光活性区，以及附加层，并且其上设置有覆盖层，以及 两个与衬底相同的导电类型，形成在层序列背离衬底的一侧上，并且其中覆盖层包括相对掺杂的半导体区域，其在垂直于出射表面延伸的条形表面区域中 的激光辐射在对称轴的区域中，并且通过V形槽形的凹槽穿透覆盖层和相邻附加层之间的边界平面并延伸到位于其下方的层中，从而流过 半导体激光二极管的正向被限制在激光活性区域的窄的带状区域中。 更高的输出功率和更大的长期稳定性是通过使V形槽形凹槽在其纵向尺寸上比谐振器长度更短并且激光器活性区同时被高度掺杂来实现的。

公开(公告)号：US11942328B2

公开(公告)日：2024-03-26

申请号：US17457362

申请日：2021-12-02

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

发明人： Maryse Fournier ,  Vincent Reboud ,  Jean-Marc Fedeli

IPC分类号： H01L21/3065 ,  H01S5/12 ,  H01S5/125 ,  H01S5/20 ,  H01S5/22 ,  H01S5/34

CPC分类号： H01L21/3065 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/209 ,  H01S5/22 ,  H01S5/2202 ,  H01S5/3401 ,  H01S5/12 ,  H01S2301/176

摘要： A method for forming a Bragg reflector includes after forming first trenches in the stack, which are intended to form structures of the distributed Bragg reflector, forming a sacrificial interlayer at least in the first trenches, depositing a second masking layer at least inside the first trenches, forming second trenches intended to form sidewalls of the laser, removing the second masking layer from inside the first trenches, removing said sacrificial interlayer so as to remove, by lift-off, residues of the second masking layer that remain inside the first trenches, and filling said first trenches with at least one metal material.

公开(公告)号：US20230275403A1

公开(公告)日：2023-08-31

申请号：US18312370

申请日：2023-05-04

申请人： Nuvoton Technology Corporation Japan

发明人： Shuichi NAKAZAWA ,  Shinji YOSHIDA ,  Isao KIDOGUCHI

IPC分类号： H01S5/343 ,  H01S5/22

CPC分类号： H01S5/34333 ,  H01S5/2202 ,  H01S5/2214 ,  H01S5/04257

摘要： A manufacturing method of a nitride-based semiconductor light-emitting element includes: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×1018 atom/cm3; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen. In this manufacturing method, a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×1018 atom/cm3 and at most 5% of the concentration of the p-type dopant, and a hydrogen concentration of the light emission layer is at most 2.0×1017 atom/cm3.

公开(公告)号：US20190221999A1

公开(公告)日：2019-07-18

申请号：US16237323

申请日：2018-12-31

申请人： SHARP KABUSHIKI KAISHA

发明人： TOSHIYUKI KAWAKAMI ,  MASAYUKI OHTA ,  RYOTA KAWAMURA

IPC分类号： H01S5/10 ,  H01S5/24 ,  H01S5/22

CPC分类号： H01S5/1003 ,  H01S5/1025 ,  H01S5/1039 ,  H01S5/2202 ,  H01S5/24

摘要： A semiconductor laser device includes an optical waveguide that extends toward a first end of the semiconductor laser device. The optical waveguide includes a first clad layer, an active layer, a second clad layer, and an electrode layer in this order. A reflecting surface, which has a dielectric film and a metal film in this order from the active layer, crosses the active layer at a second end of the optical waveguide.

公开(公告)号：US20180269655A1

公开(公告)日：2018-09-20

申请号：US15888850

申请日：2018-02-05

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Yuji Koyama ,  Masaki Yanagisawa ,  Yukihiro Tsuji ,  Hirohiko Kobayashi ,  Hiroyuki Yoshinaga

IPC分类号： H01S5/183 ,  H01S5/042 ,  H01S5/343

CPC分类号： H01S5/0425 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2202 ,  H01S5/2206 ,  H01S5/34313 ,  H01S2304/04

摘要： A surface emitting semiconductor laser includes a post disposed on a substrate, the post including an active layer and a distributed Bragg reflector; a first insulating layer disposed on side and top surfaces of the post and on the substrate, the first insulating layer having an opening on the top surface of the post; an electrode disposed in the opening of the first insulating layer; an electric conductor including a pad electrode on the first insulating layer, the electric conductor extending on the first insulating layer to the electrode; and a second insulating layer disposed on the first insulating layer, the electrode, and the electric conductor so as to cover the electrode in the opening of the first insulating layer, the second insulating layer having an opening on the pad electrode, the opening of the second insulating layer having an edge on a top surface of the pad electrode.