公开(公告)号：US2738386A

公开(公告)日：1956-03-13

申请号：US23712751

申请日：1951-07-17

申请人： RCA CORP

发明人： ROBERTS WALTER VAN B

IPC分类号： H03F15/00 ,  H03H9/62

CPC分类号： H03H9/62 ,  H03F15/00

公开(公告)号：US2666884A

公开(公告)日：1954-01-19

申请号：US17771450

申请日：1950-08-04

申请人： ERICSSON TELEFON AB L M

发明人： ARVID ERICSSON ERIC ,  OSSIAN JORGENSEN ANDERS ,  LAMBERT OVERBY SUNE

IPC分类号： G05B1/02 ,  G11C11/44 ,  H01B1/00 ,  H01C7/04 ,  H01L39/12 ,  H02M11/00 ,  H03B15/00 ,  H03F15/00 ,  H03F19/00

CPC分类号： H03F19/00 ,  G05B1/025 ,  G11C11/44 ,  H01B1/00 ,  H01C7/04 ,  H01L39/12 ,  H02M11/00 ,  H03B15/00 ,  H03F15/00 ,  Y10S336/01 ,  Y10S505/825 ,  Y10S505/854 ,  Y10S505/88

公开(公告)号：US1810539A

公开(公告)日：1931-06-16

申请号：US12954626

申请日：1926-08-16

申请人： FED TELEGRAPH CO

发明人： SOKOLOFF BORIS N

IPC分类号： H03F15/00

CPC分类号： H03F15/00

公开(公告)号：US10984938B2

公开(公告)日：2021-04-20

申请号：US16235089

申请日：2018-12-28

申请人： TDK CORPORATION

发明人： Shinji Hara ,  Akimasa Kaizu

IPC分类号： H01F10/32 ,  H01L43/02 ,  H01F41/32 ,  H01L43/12 ,  H03H11/16 ,  H03F15/00 ,  H01L43/10 ,  H03H11/04 ,  H03H2/00

摘要： The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.

公开(公告)号：US10559412B2

公开(公告)日：2020-02-11

申请号：US16204502

申请日：2018-11-29

申请人： TDK CORPORATION

发明人： Akimasa Kaizu ,  Naomichi Degawa ,  Tetsuya Roppongi

IPC分类号： H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  H03B15/00 ,  H03H11/16 ,  H03F15/00 ,  H01L27/22 ,  H03H2/00 ,  G01R33/09 ,  H01L43/10

摘要： At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.

公开(公告)号：US20190180901A1

公开(公告)日：2019-06-13

申请号：US16204502

申请日：2018-11-29

申请人： TDK CORPORATION

发明人： Akimasa KAIZU ,  Naomichi DEGAWA ,  Tetsuya ROPPONGI

IPC分类号： H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  H01L27/22 ,  H03B15/00 ,  H03H11/16 ,  H03F15/00

摘要： At least one magnetoresistance effect element and a magnetic field applying unit to apply a magnetic field to the magnetoresistance effect element, the magnetic field applying unit includes a first ferromagnetic material having a portion protruding to the magnetoresistance effect element side in a stacking direction of the magnetoresistance effect element, a second ferromagnetic material sandwiching the magnetoresistance effect element with the first ferromagnetic material, and a coil wound around the first ferromagnetic material, a first magnetization free layer of the magnetoresistance effect element has a portion free of overlapping with at least one of a second surface of the protruding portion on the magnetoresistance effect element side and a third surface of the second ferromagnetic material on the magnetoresistance effect when viewed in the stacking direction, and a center of gravity of the first magnetization free layer, positioned in a region connecting the second surface and the third surface.

公开(公告)号：US10157652B2

公开(公告)日：2018-12-18

申请号：US15578841

申请日：2016-05-31

申请人： CROCUS Technology SA

发明人： Quentin Stainer

IPC分类号： G11C11/00 ,  G11C11/16 ,  H03F15/00 ,  G06G7/14 ,  H01F10/32 ,  H01L43/08

摘要： A magnetic device configured to perform an analog adder circuit function and including a plurality of magnetic units. Each magnetic unit includes n magnetic tunnel junctions electrically connected in series via a current line. Each magnetic tunnel junction includes a storage magnetic layer having a storage magnetization, a sense magnetic layer having a sense magnetization, and a tunnel barrier layer. Each magnetic unit also includes n input lines, each being configured to generate a magnetic field adapted for varying a direction of the sense magnetization and a resistance of the n magnetic tunnel junctions, based on an input. Each of the n magnetic units is configured to add said n inputs to generate an output signal that varies in response to the n resistances.

公开(公告)号：US20170345546A1

公开(公告)日：2017-11-30

申请号：US15192679

申请日：2016-06-24

申请人： QUALCOMM Incorporated

发明人： Miena Armanious

IPC分类号： H01F27/28 ,  H03H7/01 ,  H03F15/00 ,  H03H7/38 ,  H03B15/00

CPC分类号： H01F27/2804 ,  H01F17/0006 ,  H01F2017/0073 ,  H03B15/00 ,  H03F15/00 ,  H03H7/0138 ,  H03H7/38

摘要： Exemplary embodiments of the disclosure are related to inductors, e.g., at least a pair of planar inductors, for wireless communication apparatus, for example transceivers used in a wireless device. A device may include a first planar inductor configured on a first area of a substrate. The first planar inductor includes a first loop configured to produce a first magnetic field in a first direction and a second loop configured to produce a second magnetic field in a second direction. The device further includes a second planar inductor configured on a second area of the substrate. The second planar inductor includes a third loop configured to produce a third magnetic field in a third direction and a fourth loop configured to produce a fourth magnetic field in a fourth direction. The second area may at least partially overlap the first area.

公开(公告)号：US09324936B2

公开(公告)日：2016-04-26

申请号：US14431140

申请日：2013-09-12

申请人： CROCUS Technology SA

发明人： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC分类号： H01L43/00 ,  H01L29/82 ,  H01L43/02 ,  H03F15/00 ,  G11C11/16 ,  H01L43/10 ,  H03K19/18

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/10 ,  H03F15/00 ,  H03K19/18

摘要： A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

摘要翻译： 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。

公开(公告)号：US20150270479A1

公开(公告)日：2015-09-24

申请号：US14431140

申请日：2013-09-12

申请人： CROCUS TECHNOLOGY SA

发明人： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC分类号： H01L43/02 ,  H03K19/18 ,  H03F15/00 ,  H01L43/10

CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/10 ,  H03F15/00 ,  H03K19/18

摘要： A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

摘要翻译： 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。