公开(公告)号：US20240087854A1

公开(公告)日：2024-03-14

申请号：US18462378

申请日：2023-09-06

Applicant: PSK INC.

Inventor： KWANG SUNG YOO ,  JONG CHAN LEE

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32348 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32733 ,  H01J2237/20235 ,  H01J2237/3341

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit positioned within the treating space and configured to apply a power and to support a substrate; and a plasma control unit configured to change a characteristic of a plasma formed in the treating space, and wherein the plasma control unit includes: a gap control plate positioned above the support unit; and a plate driver changing a position of the gap control plate, and the plate driver maintains a gap between a bottom surface of the gap control plate and a top surface of the support plate while changing a characteristic of the plasma by changing the position of the gap control plate.

公开(公告)号：US20240087843A1

公开(公告)日：2024-03-14

申请号：US18462385

申请日：2023-09-06

Applicant: PSK INC.

Inventor： JONG CHAN LEE ,  YONG IK OH ,  JI TAE KWON ,  SEONG MIN NAM

IPC: H01J37/244 ,  H01J37/32

CPC classification number: H01J37/244 ,  H01J37/32348 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/3288 ,  H01J2237/24578 ,  H01J2237/3341

Abstract: The inventive concept provides a substrate treating method. The substrate treating method includes taking in a substrate to a treating space to mount on a support unit; upwardly moving the support unit after mounting the substrate on the support unit; determining whether the support unit moves normally after the upwardly moving the support unit; and treating the substrate by generating a plasma in the treating space, and wherein at the determining whether the support unit moves normally, before the plasma is generated at the treating space at the treating the substrate, whether a pulse distance matching a predetermined distance data according to a pulse value of a driving unit which pulse-moves a moving body which moves the support unit in a top/down direction, matches a movement distance of the moving body is determined, and an interlock is generated if the pulse distance and the movement distance is different.

公开(公告)号：US20240062998A1

公开(公告)日：2024-02-22

申请号：US18268198

申请日：2021-12-09

Applicant: PSK INC.

Inventor： Jin Woo PARK ,  Hyeong Shin CHO

IPC: H01J37/32

CPC classification number: H01J37/32743 ,  H01J37/32788 ,  H01J37/32633 ,  H01J37/32816 ,  H01J37/3244 ,  H01J2237/336 ,  H01J2237/332

Abstract: Disclosed is a method of processing a substrate. The method may include: a substrate loading operation of loading a substrate into a treating space of a chamber; a film removal operation of removing a film provided on the substrate; a protective film formation operation of forming a protective film containing oxygen on the substrate; and a substrate unloading operation of unloading the substrate from the treating space.

公开(公告)号：US20230068224A1

公开(公告)日：2023-03-02

申请号：US17536518

申请日：2021-11-29

Applicant: PSK INC.

Inventor： Kwang Sung YOO ,  A Ram KIM ,  Song I HAN

IPC: H01J37/32

Abstract: Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.

公开(公告)号：US11139152B2

公开(公告)日：2021-10-05

申请号：US16597305

申请日：2019-10-09

Applicant: PSK INC.

Inventor： Hung Sheng Wang

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/44

Abstract: The inventive concept relates to an apparatus for processing a substrate. The substrate processing apparatus includes a scatter that is disposed over a baffle and that separates plasma and impurities. The scatter includes a plate having a first opening formed in a central area thereof when viewed from above and a collision block that is disposed over the first opening to face the first opening and that collides with plasma supplied from a plasma generation unit and impurities.

公开(公告)号：US20210305014A1

公开(公告)日：2021-09-30

申请号：US16886479

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Geon Jong KIM ,  Tae Hwan YOUN ,  Jong Chan LEE

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

Abstract: An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.

公开(公告)号：US20210193440A1

公开(公告)日：2021-06-24

申请号：US17117720

申请日：2020-12-10

Applicant: PSK INC.

Inventor： Young Jae MA ,  Sung Jin YOON ,  Hyo Jeong SEO ,  Jong Woo PARK

IPC: H01J37/32 ,  C23C4/04

Abstract: Embodiments of the inventive concept provide a substrate processing apparatus. The substrate treating apparatus comprises a process treating unit providing a treating space performed treating the substrate; a plasma generating unit generating the plasma discharging a process gas, and supplying the plasma to the treating space. The plasma generating unit provides a plasma chamber having a generating space of the plasma; an antenna wound to surround the plasma chamber outside the plasma chamber; a first coating film covering inside walls of the plasma chamber and comprising yttrium fluoride (YF3).

公开(公告)号：US20210151299A1

公开(公告)日：2021-05-20

申请号：US16701235

申请日：2019-12-03

Applicant: PSK INC.

Inventor： JUNG HYUN KANG

IPC: H01J37/32 ,  H01L21/67

Abstract: The inventive concept relates to an apparatus for processing a substrate. The apparatus for processing the substrate includes a housing having a process space, a support unit that supports the substrate in the process space, a plasma source that generates plasma from a process gas, and a baffle unit disposed over the support unit. The baffle unit includes a baffle having first holes formed therein through which the process gas and/or the plasma flows, and the baffle has second holes formed in an edge region thereof, each of which has a lengthwise direction inclined with respect to a radial direction of the baffle when viewed from above.

公开(公告)号：US20160020070A1

公开(公告)日：2016-01-21

申请号：US14467522

申请日：2014-08-25

Applicant: PSK INC.

Inventor： Hyun Jun KIM ,  Chulwon JOO ,  Kyung Min LEE

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/3266

Abstract: Provided is a plasma generating apparatus using a dual plasma source and a substrate treating apparatus including the same. A plasma generating apparatus may include: an RF power source supplying an RF signal; a plasma chamber providing a space for generating plasma; a first plasma source disposed on a portion of the plasma chamber to generate plasma; and a second plasma source disposed on another portion of the plasma chamber to generate plasma wherein the second source comprises a plurality of gas supply loops disposed along a circumference of the plasma chamber and supplied with a process gas therein to supply the process gas to the plasma chamber; and a plurality of electromagnetic field applicators coupled to the gas supply loop and receiving the RF signal to generate plasma from the process gas.

Abstract translation: 提供了一种使用双等离子体源的等离子体产生装置和包括该等离子体源的基板处理装置。 等离子体发生装置可以包括：提供RF信号的RF电源; 等离子体室，其提供用于产生等离子体的空间; 设置在所述等离子体室的一部分上以产生等离子体的第一等离子体源; 以及设置在所述等离子体室的另一部分上以产生等离子体的第二等离子体源，其中所述第二源包括沿所述等离子体室的圆周设置并在其中供应工艺气体的多个气体供应环，以将处理气体供应到所述等离子体 房间 以及耦合到所述气体供应回路并接收所述RF信号以从所述处理气体产生等离子体的多个电磁场施加器。

公开(公告)号：US09214357B1

公开(公告)日：2015-12-15

申请号：US14465131

申请日：2014-08-21

Applicant: PSK INC.

Inventor： Young Yeon Ji ,  Won Bum Seo ,  Byoung Hoon Kim

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/0234 ,  H01J37/32724 ,  H01L21/02046 ,  H01L21/31116

Abstract: The present invention disclosed herein relates to a substrate treating apparatus and method. The substrate treating method includes: providing a substrate on which an oxide layer is formed; treating the oxide layer with a first process gas in a plasma state to substitute the treated oxide layer with a by-product layer; and heating the substrate to remove the by-product layer at a temperature which is above a first heating temperature at which the by-product layer is decomposed and is above a second heating temperature that is a boiling point of an additive by-product generated while the by-product layer is decomposed.

Abstract translation: 本文公开的本发明涉及一种基板处理装置和方法。 基板处理方法包括：提供其上形成有氧化物层的基板; 用处于等离子体状态的第一工艺气体处理氧化物层以用副产物层代替经处理的氧化物层; 并且加热基板以在副产物层分解的第一加热温度以上的温度下除去副产物层，并且高于作为副产物生成的沸点的第二加热温度，同时 副产物层被分解。