Mesh and printing screen for screen printing and a method for the
preparation thereof
    1.
    发明授权
    Mesh and printing screen for screen printing and a method for the preparation thereof 失效
    丝网印刷丝网印刷及其制备方法

    公开(公告)号:US4741920A

    公开(公告)日:1988-05-03

    申请号:US883172

    申请日:1986-07-08

    IPC分类号: B41N1/24 G03F7/12 B05D3/06

    CPC分类号: B41N1/247 G03F7/12

    摘要: A greatly improved printing screen used for screen printing is provided in respect of the durability in printing, resistance against solvents and antistatic performance based on a mesh of polyester or nylon filaments. According to the invention, the base mesh is subjected to exposure to low temperature plasma of an inorganic gas prior to coating with a photosensitive resin composition in the form of an aqueous emulsion. When the plasma-treated mesh is coated, prior to coating with the photosensitive resin emulsion, with a surface active agent or when the photosensitive resin emulsion is admixed with a surface active agent, further improvement can be obtained in the antistatic performance of the screen. When a base screen dyed in yellow is used, the drawbacks caused by halation in the pattern-wise exposure of the screen to light can be greatly reduced.

    摘要翻译: 关于印刷耐久性,耐溶剂性和基于聚酯或尼龙丝网的抗静电性能,提供了用于丝网印刷的大大改进的印刷丝网。 根据本发明,在用水乳液形式的感光性树脂组合物涂布之前,将基底网暴露于无机气体的低温等离子体。 当等离子体处理的网被涂覆时,在用感光性树脂乳液涂布之前,用表面活性剂,或当将感光性树脂乳液与表面活性剂混合时,可以在屏幕的抗静电性能方面得到进一步的改进。 当使用黄色染色的基本屏幕时,可以大大降低由于屏幕对于光的图案曝光而产生的不利影响。

    COMPOSITE SUBSTRATE, METHOD FOR FORMING NANOCARBON FILM, AND NANOCARBON FILM

    公开(公告)号:US20180265360A1

    公开(公告)日:2018-09-20

    申请号:US15534652

    申请日:2015-12-16

    摘要: Provided is a composite substrate which is provided with: a single crystal silicon carbide thin film 11 having a thickness of 1μm or less; a handle substrate 12 which supports the single crystal silicon carbide thin film 11 and is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100° C.; and an intervening layer 13 which has a thickness of 1μm or less and is arranged between the single crystal silicon carbide thin film 11 and the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.

    SINTERED RARE-EARTH MAGNET AND METHOD OF MANUFACTURE

    公开(公告)号:US20240355513A1

    公开(公告)日:2024-10-24

    申请号:US18615143

    申请日:2024-03-25

    IPC分类号: H01F1/053 H01F41/02

    CPC分类号: H01F1/0536 H01F41/0266

    摘要: A sintered rare-earth magnet contains specific amounts of R (two or more rare-earth elements, with Nd and Pr being essential), boron (B), M1 (one or more element selected from Al, Si, Cr, Mn, Cu, Zn, Ga, Ge, Mo, Sn, W, Pb and Bi) and M2 (one or more element selected from Ti, V, Zr, Nb, Hf and Ta), with the balance being T (one or more element selected from Fe and Co). The magnet has a R2Ti4B main phase and, over an area fraction of more than 0% and up to 10%, an R2(T, M1)17 phase covered with an R6(T, M1)14 phase and an R-rich phase. Two magnetization inflection points—a first knickpoint on a low magnetic field side and a second knickpoint on a high magnetic field side—are present in the second quadrant of the magnetic polarization curve at 23° C.

    Method For Forming Resist Underlayer Film And Patterning Process

    公开(公告)号:US20240345483A1

    公开(公告)日:2024-10-17

    申请号:US18601583

    申请日:2024-03-11

    IPC分类号: G03F7/11 G03F7/075 G03F7/09

    CPC分类号: G03F7/11 G03F7/0752 G03F7/094

    摘要: The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

    MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS

    公开(公告)号:US20240345480A1

    公开(公告)日:2024-10-17

    申请号:US18625950

    申请日:2024-04-03

    IPC分类号: G03F7/029 G03F7/32

    CPC分类号: G03F7/029 G03F7/325

    摘要: The negative-tone molecular resist composition comprises an onium salt containing a cation having a cyclic ether site and an organic solvent has a high sensitivity and forms a resist film with improved resolution and LWR when processed by photolithography using high-energy radiation. The molecular resist composition of the invention meets both high sensitivity and high resolution and is improved in LWR when processed by photolithography using high-energy radiation, especially EB or EUV lithography. The resist composition is quite useful for precise micropatterning.