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    PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS
    2.
    发明申请
    PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 有权
    感光成像装置及相关方法

    公开(公告)号：US20150270306A1

    公开(公告)日：2015-09-24

    申请号：US14223938

    申请日：2014-03-24

    申请人： SiOnyx, Inc.

    发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14638 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

    摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

    摘要翻译： 提供光敏设备和相关方法。 在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域以及耦合到 半导体衬底并且可操作以从所述至少一个结转移电信号。 在一个方面，纹理化区域可操作以便于从红外线电磁辐射的检测中产生电信号。 在另一方面，与电磁辐射相互作用进一步包括与缺少纹理区域的半导体衬底相比增加半导体衬底的有效吸收波长。

    Three dimensional sensors, systems, and associated methods
    3.
    发明授权
    Three dimensional sensors, systems, and associated methods 有权
    三维传感器，系统和相关方法

    公开(公告)号：US08698084B2

    公开(公告)日：2014-04-15

    申请号：US13418226

    申请日：2012-03-12

    申请人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

    发明人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

    IPC分类号： G01J5/02 ,  H01L27/14

    CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.

    摘要翻译： 提供3D传感器，系统和相关方法。 在一个方面，例如，用于检测红外和可见光的单片3D传感器可以包括具有器件表面的半导体衬底，在器件表面处形成的至少一个可见光光电二极管和在器件表面处形成的至少一个3D光电二极管 靠近所述至少一个可见光光电二极管。 该装置还可以包括功能上耦合到至少一个3D光电二极管并定位成与电磁辐射相互作用的量子效率增强的红外光区域。 在一个方面，量子效率增强红外光区域是位于器件表面处的纹理区域。

    Laser Processed Photovoltaic Devices and Associated Methods
    4.
    发明申请
    Laser Processed Photovoltaic Devices and Associated Methods 审中-公开
    激光加工光伏器件及相关方法

    公开(公告)号：US20140027774A1

    公开(公告)日：2014-01-30

    申请号：US13472075

    申请日：2012-05-15

    申请人： Xia Li ,  Christopher Vineis ,  Martin U. Pralle

    发明人： Xia Li ,  Christopher Vineis ,  Martin U. Pralle

    IPC分类号： H01L31/105

    CPC分类号： H01L31/1055 ,  H01L31/02363 ,  H01L31/0747 ,  Y02E10/50

    摘要： Photovoltaic heterojunction devices, combination hetero- homo-junction devices, and associated methods are provided. In one aspect, for example, a photovoltaic device can include a doped semiconductor substrate having a first textured region and a second textured region opposite the first textured region, a first intrinsic semiconductor layer coupled to the first textured region opposite the semiconductor substrate and a second intrinsic semiconductor layer coupled to the second textured region opposite the semiconductor substrate. A first semiconductor layer can be coupled to the first intrinsic semiconductor layer opposite the first textured region, where the first semiconductor layer is doped to an opposite polarity of the doped semiconductor substrate. A second semiconductor layer can be coupled to the second intrinsic semiconductor layer opposite the second textured region, where the second semiconductor layer is doped to a same polarity as the semiconductor substrate but having a higher dopant concentration as the semiconductor substrate.

    摘要翻译： 提供了光伏异质结器件，组合异质结器件和相关方法。 在一个方面，例如，光伏器件可以包括具有第一纹理区域和与第一纹理化区域相对的第二纹理化区域的掺杂半导体衬底，耦合到与半导体衬底相对的第一纹理化区域的第一本征半导体层， 本征半导体层耦合到与半导体衬底相对的第二纹理区域。 第一半导体层可以耦合到与第一纹理化区域相对的第一本征半导体层，其中第一半导体层被掺杂到掺杂半导体衬底的相反极性。 第二半导体层可以耦合到与第二纹理化区域相对的第二本征半导体层，其中第二半导体层被掺杂到与半导体衬底相同的极性，但是具有较高的掺杂剂浓度作为半导体衬底。

    Photovoltaic semiconductor devices and associated methods
    5.
    发明授权
    Photovoltaic semiconductor devices and associated methods 有权
    光伏半导体器件及相关方法

    公开(公告)号：US08309389B1

    公开(公告)日：2012-11-13

    申请号：US12879950

    申请日：2010-09-10

    申请人： Susan Alie ,  Stephen D. Saylor ,  Christopher J. Vineis

    发明人： Susan Alie ,  Stephen D. Saylor ,  Christopher J. Vineis

    IPC分类号： H01L21/00

    CPC分类号： H01L31/02363 ,  Y02E10/50

    摘要： Photovoltaic semiconductor devices and associated methods are provided. In one aspect, for example, a method of making a photovoltaic semiconductor device having enhanced electromagnetic radiation absorption can include applying a damage removal etch (DRE) to a semiconductor material to an RMS surface roughness of from about 0.5 nm to about 50 nm and texturing a single side of the semiconductor material. The texturing further includes irradiating a target region of the semiconductor material with laser radiation to create features having a size of from about 50 nm to about 10 microns.

    摘要翻译： 提供了光伏半导体器件和相关方法。 在一个方面，例如，制造具有增强的电磁辐射吸收的光伏半导体器件的方法可以包括将损伤去除蚀刻（DRE）施加到半导体材料至约0.5nm至约50nm的RMS表面粗糙度，并且纹理化 半导体材料的单面。 纹理还包括用激光辐射照射半导体材料的目标区域以产生尺寸为约50nm至约10微米的特征。

    Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods
    6.
    发明申请
    Devices Having Enhanced Electromagnetic Radiation Detection and Associated Methods 审中-公开
    具有增强电磁辐射检测和相关方法的装置

    公开(公告)号：US20120068289A1

    公开(公告)日：2012-03-22

    申请号：US13069135

    申请日：2011-03-22

    申请人： Susan Alie ,  Martin U. Pralle ,  Chintamani Palsule ,  Jeffrey McKee ,  Xia Li

    发明人： Susan Alie ,  Martin U. Pralle ,  Chintamani Palsule ,  Jeffrey McKee ,  Xia Li

    IPC分类号： H01L31/0232 ,  H01L21/31

    CPC分类号： H01L31/02327 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/1892 ,  Y02E10/50

    摘要： Photosensitive semiconductor devices and associated methods are provided. In one aspect, a semiconductor device can include a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate, where the semiconductor layer has a device surface opposite the semiconductor substrate. The device also includes at least one textured region coupled between the semiconductor substrate and the semiconductor layer. In another aspect, the device further includes at least one dielectric layer coupled between the semiconductor substrate and the semiconductor layer.

    摘要翻译： 提供了感光半导体器件和相关方法。 一方面，半导体器件可以包括半导体衬底和耦合到半导体衬底的半导体层，其中半导体层具有与半导体衬底相对的器件表面。 该器件还包括耦合在半导体衬底和半导体层之间的至少一个纹理区域。 在另一方面，该器件还包括耦合在半导体衬底和半导体层之间的至少一个电介质层。

    Response-enhanced monolithic-hybrid pixel
    7.
    发明授权
    Response-enhanced monolithic-hybrid pixel 有权
    响应增强的单片混合像素

    公开(公告)号：US07968834B2

    公开(公告)日：2011-06-28

    申请号：US12235060

    申请日：2008-09-22

    申请人： Kenton Veeder

    发明人： Kenton Veeder

    IPC分类号： H01L27/00 ,  H01L31/00

    CPC分类号： G01J1/4228 ,  H01L27/14609

    摘要： A light-sensing pixel is described that includes more than one detector element, each of which is sensitive to a range of wavelengths of the electromagnetic spectrums. The detectors are arranged in a readout circuit that can be constructed on a monolithic semiconductor product such that one or more of the detectors can be switched on or off to include or exclude an output contribution from said detectors and enhance the response of the pixel. Also, the detectors can included a laser-treated semiconductor sensor for efficient sensing of radiation in one or more regions of the spectrum. Arrays and imaging products using such pixels are disclosed.

    摘要翻译： 描述了一种感光像素，其包括多于一个的检测器元件，每个检测器元件对电磁光谱的波长范围敏感。 检测器布置在读取电路中，其可以构造在单片半导体产品上，使得一个或多个检测器可以被接通或断开，以包括或排除来自所述检测器的输出贡献并增强像素的响应。 此外，检测器可以包括用于有效感测光谱的一个或多个区域中的辐射的激光处理的半导体传感器。 公开了使用这种像素的阵列和成像产品。

    Pixel Isolation Elements, Devices and Associated Methods
    9.
    发明申请
    Pixel Isolation Elements, Devices and Associated Methods 有权
    像素隔离元件，器件和相关方法

    公开(公告)号：US20150372040A1

    公开(公告)日：2015-12-24

    申请号：US14747875

    申请日：2015-06-23

    申请人： SiOnyx, Inc.

    发明人： Martin U. Pralle ,  Jeffrey McKee ,  Jason Sickler

    IPC分类号： H01L27/146

    CPC分类号： H01L27/1463 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

    摘要： Light trapping pixels, devices incorporating such pixels, and various associated methods are provided. In one aspect, for example, a light trapping pixel device can include a light sensitive pixel having a light incident surface, a backside surface opposite the light incident surface, and a peripheral sidewall disposed into at least a portion of the pixel and extending at least substantially around the pixel periphery. The pixel can also include a backside light trapping material substantially covering the backside surface and a peripheral light trapping material substantially covering the peripheral sidewall. The light contacting the backside light trapping material or the peripheral light trapping material is thus reflected back toward the pixel.

    摘要翻译： 提供了光捕获像素，并入这些像素的装置以及各种相关的方法。 在一个方面，例如，光捕获像素装置可以包括具有光入射表面的光敏像素，与光入射表面相对的背面，以及设置在像素的至少一部分中的外围侧壁，至少延伸 基本上围绕像素周边。 像素还可以包括基本上覆盖背面的背面光捕获材料和基本覆盖周边侧壁的外围光捕获材料。 因此，与背面的光捕获材料或周围的光捕获材料接触的光被反射回到像素。

    HIGH DYNAMIC RANGE CMOS IMAGE SENSOR HAVING ANTI-BLOOMING PROPERTIES AND ASSOCIATED METHODS
    10.
    发明申请
    HIGH DYNAMIC RANGE CMOS IMAGE SENSOR HAVING ANTI-BLOOMING PROPERTIES AND ASSOCIATED METHODS 有权
    高动态范围CMOS图像传感器，具有抗真空性能和相关方法

    公开(公告)号：US20140313386A1

    公开(公告)日：2014-10-23

    申请号：US14183338

    申请日：2014-02-18

    申请人： SiOnyx, Inc.

    发明人： Jutao Jiang ,  Matt Borg

    IPC分类号： H04N5/374

    CPC分类号： H04N5/374 ,  H01L27/14654 ,  H04N5/35581 ,  H04N5/3591

    摘要： A method of providing blooming protection to a CMOS imager having a pixel array of a plurality of pixels arranged in rows and columns, where the CMOS imager is operable to capture high dynamic range images using a rolling shutter, is provided. Such a method can include reading out charge accumulated by the pixels in a readout row of a first integration time, applying a reset to the readout row for a reset time sufficient to allow readout and reset to occur in at least one subsequent row, and starting a second integration time of the pixels in the readout row, wherein the second integration time is shorter than the first integration time, and wherein the at least one subsequent row is a sufficient number of rows to have a combined reset to preclude blooming effects from the pixel array during the second integration time.

    摘要翻译： 提供了一种对具有排列成行和列的多个像素的像素阵列的CMOS成像器提供防晕保护的方法，其中CMOS成像器可操作以使用滚动快门捕获高动态范围图像。 这种方法可以包括读出由第一积分时间的读出行中的像素积累的电荷，向读出行施加一个复位时间的复位时间，足​​以允许在至少一个后续行中发生读出和复位，并且启动 所述读出行中的所述像素的第二积分时间，其中所述第二积分时间比所述第一积分时间短，并且其中所述至少一个后续行是足够数量的行以具有组合复位以排除来自所述第一积分时间 像素阵列在第二个积分时间。