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公开(公告)号：US11758817B2
公开(公告)日：2023-09-12
申请号：US16096077
申请日：2017-05-31
发明人： Takeshi Kijima
IPC分类号： H01L41/083 , H10N30/50 , C23C14/35 , C23C14/30 , C23C14/08 , C30B29/32 , C30B1/02 , C30B29/68 , C30B23/02 , H10N30/05 , H10N30/06 , H10N30/076 , H10N30/078 , H10N30/87 , H10N30/00 , H10N30/853 , C23C14/34 , C23C14/58 , C30B29/22 , C30B33/02
CPC分类号： H10N30/508 , C23C14/08 , C23C14/083 , C23C14/088 , C23C14/30 , C23C14/34 , C23C14/35 , C23C14/5806 , C30B1/02 , C30B23/02 , C30B23/025 , C30B29/22 , C30B29/32 , C30B29/68 , C30B33/02 , H10N30/05 , H10N30/06 , H10N30/076 , H10N30/078 , H10N30/1051 , H10N30/8554 , H10N30/877
摘要： A film structure (10) includes a substrate (11), a piezoelectric film (14) formed on the substrate (11) and containing first composite oxide represented by a composition formula Pb(Zr1-xTix)O3, and a piezoelectric film (15) formed on the piezoelectric film (14) and containing second composite oxide represented by a composition formula Pb(Zr1-yTiy)O3. In the composition formulae, x satisfies 0.10
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公开(公告)号：US11527706B2
公开(公告)日：2022-12-13
申请号：US16027574
申请日：2018-07-05
发明人： Takeshi Kijima , Yasuaki Hamada , Yuuji Honda
IPC分类号： H01L41/187 , H01L41/047 , H01L41/297 , H01L41/314 , H01L41/083 , H01L41/316 , H01L41/318 , H01L41/08
摘要： A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a (100) plane; an orientation film including a zirconium oxide film that is cubic crystal (100)-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal (100)-oriented on the orientation film.
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公开(公告)号：US20220181541A1
公开(公告)日：2022-06-09
申请号：US17436294
申请日：2019-12-27
发明人： Takeshi KIJIMA , Akio KONISHI
IPC分类号： H01L41/08 , H01L41/187 , H01L39/12
摘要： According to the present invention, a piezoelectric film having a single crystal structure is able to be formed, from various piezoelectric materials, on a film structure of the present invention. A film structure according to the present invention includes: a substrate; a buffer film which is formed on the substrate and has a tetragonal crystal structure containing zirconia; a metal film containing a platinum group element, which is formed on the buffer film by means of epitaxial growth; and a film containing Sr(Ti1−x, Rux)O3 (wherein 0≤x≤1), which is formed on the metal film by means of epitaxial growth.
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公开(公告)号：US10657999B2
公开(公告)日：2020-05-19
申请号：US15319149
申请日：2014-06-20
发明人： Kouji Abe , Toshiyuki Watanabe , Masafumi Tanaka , Kohei Okudaira , Hiroyasu Sekino , Yuuji Honda
IPC分类号： G11B5/85 , C23C16/503 , G11B5/84 , H01J37/32 , C23C16/26 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/50 , G11B5/72
摘要： A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.
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公开(公告)号：US20190013459A1
公开(公告)日：2019-01-10
申请号：US16027574
申请日：2018-07-05
发明人： Takeshi KIJIMA , Yasuaki HAMADA , Yuuji HONDA
IPC分类号： H01L41/187 , H01L41/047 , H01L41/083 , H01L41/297 , H01L41/314
摘要： A film structure body has: a substrate that is a silicon substrate including an upper surface composed of a plane; an orientation film including a zirconium oxide film that is cubic crystal-oriented on the upper surface; and a conductive film including a platinum film that is cubic crystal-oriented on the orientation film.
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公开(公告)号：US20190032205A1
公开(公告)日：2019-01-31
申请号：US16142342
申请日：2018-09-26
发明人： Yuuji HONDA , Takayuki Abe
摘要： A plasma CVD apparatus efficiently coats the surfaces of fine particles with a thin film or super-fine particles by concentrating a plasma near the fine particles. The plasma CVD apparatus includes a chamber, a container disposed in the chamber for housing the fine particles, the container having a polygonal inner shape in a cross section substantially perpendicular to a longitudinal axis of the container, a ground shielding member for shielding a surface of the container other than a housing face, a rotation mechanism for causing the container to rotate or act as a pendulum on an axis of rotation substantially perpendicular to the cross section, an opposed electrode disposed in the container so as to face the housing face, a plasma power source electrically connected to the container, a gas introducing mechanism for introducing a raw gas into the container, and an evacuation mechanism for evacuating the chamber.
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7.发明授权公开(公告)号：US10854808B2
公开(公告)日：2020-12-01
申请号：US14886138
申请日：2015-10-19
发明人： Takeshi Kijima
IPC分类号： C23C14/35 , H01L41/187 , C23C14/08 , H01L41/318 , C23C14/56 , C23C28/04 , C23C14/02
摘要： Ferroelectric ceramics including: a Pb(Zr1-BTiB)O3 seed crystal film formed on a foundation film; and a Pb(Zr1-xTix)O3 crystal film, wherein: the seed crystal film is formed by sputtering while the foundation film is being disposed on an upper side of a sputtering target and the foundation film is being made to face the sputtering target; in the seed crystal film, a Zr/Ti ratio on the crystal film side from the center in the thickness direction thereof is larger than a Zr/Ti ratio on the foundation film side from the center in the thickness direction thereof; the crystal film is crystallized by coating and heating a solution containing, in an organic solvent, a metal compound wholly or partially containing ingredient metals of the crystal film and a partial polycondensation product thereof; and the B and the x satisfy formulae 2 and 3, respectively, below, 0.1
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公开(公告)号：US20190123257A1
公开(公告)日：2019-04-25
申请号：US16096077
申请日：2017-05-31
发明人： Takeshi KIJIMA
IPC分类号： H01L41/083 , C23C14/08 , C23C14/58 , C30B23/02 , C30B29/22 , C30B33/02 , C23C14/34 , H01L41/047 , H01L41/187 , H01L41/316 , H01L41/29 , H01L41/27
摘要： A film structure (10) includes a substrate (11), a piezoelectric film (14) formed on the substrate (11) and containing first composite oxide represented by a composition formula Pb(Zr1−xTix)O3, and a piezoelectric film (15) formed on the piezoelectric film (14) and containing second composite oxide represented by a composition formula Pb(Zr1−yTiy)O3. In the composition formulae, x satisfies 0.10
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公开(公告)号：US10243134B2
公开(公告)日：2019-03-26
申请号：US14963359
申请日：2015-12-09
发明人： Takeshi Kijima , Yasuaki Hamada , Takeshi Nomura
IPC分类号： H01L41/187 , H01L41/08 , H01L41/047 , H01L41/318
摘要： An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film.
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公开(公告)号：US10115887B2
公开(公告)日：2018-10-30
申请号：US14543024
申请日：2014-11-17
发明人： Takeshi Kijima , Yuuji Honda , Yukinori Tani
IPC分类号： C04B35/491 , H01L41/187 , H01L41/319 , H01L41/08 , H01L41/318
摘要： An aspect of the present invention relates to ferroelectric ceramics including a stacked film formed on a Si substrate, a Pt film formed on the stacked film, a SrTiO3 film formed on the Pt film, and a PZT film formed on the SrTiO3, wherein the stacked film is formed by repeating sequentially N times a first ZrO2 film and a Y2O3 film, and a second ZrO2 film is formed on the film formed repeatedly N times, the N being an integer of 1 or more. It is preferable that a ratio of Y/(Zr+Y) of the stacked film is 30% or less.
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