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    CERAMIC ELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME
    1.
    发明申请
    CERAMIC ELECTRONIC COMPONENT AND METHOD FOR PRODUCING SAME 有权
    陶瓷电子元件及其制造方法

    公开(公告)号：US20110051314A1

    公开(公告)日：2011-03-03

    申请号：US12851106

    申请日：2010-08-05

    申请人： Takashi SAKURAI ,  Shinya Yoshihara ,  Ko Onodera ,  Hisayuki Abe ,  Masahiko Konno ,  Satoshi Kurimoto ,  Hiroshi Shindo ,  Akihiro Horita ,  Genichi Watanabe ,  Yoshikazu Ito

    发明人： Takashi SAKURAI ,  Shinya Yoshihara ,  Ko Onodera ,  Hisayuki Abe ,  Masahiko Konno ,  Satoshi Kurimoto ,  Hiroshi Shindo ,  Akihiro Horita ,  Genichi Watanabe ,  Yoshikazu Ito

    IPC分类号： H01G4/06 ,  H01C7/10 ,  H01F27/28 ,  B23K1/20

    CPC分类号： H01G4/2325 ,  B23K1/0016 ,  H01G4/30

    摘要： There are provided a ceramic electronic component and a method for producing the ceramic electronic component, where a ground electrode layer can be directly coated with lead-free solder without lowering reliabilities. Terminal electrode 3 is provided with a ground electrode layer 21 of Cu having been formed by firing, a solder layer 22 formed of a lead-free solder based on five elements of Sn—Ag—Cu—Ni—Ge, and a diffusion layer 23 having been formed by the diffusion of Ni between the ground electrode layer 21 and the solder layer 22. Because the diffusion layer 23 of Ni is formed between the ground electrode layer 21 and the solder layer 22, the diffusion layer 23, which functions as a barrier layer, suppresses the solder leach of Cu from the ground electrode layer 21. The diffusion layer 23 of Ni can also suppress the growth of fragile intermetallic compounds of Sn—Cu. Therefore, a decrease in the bonding strength between the ground electrode layer 21 and the solder layer 22 can be prevented.

    摘要翻译： 提供陶瓷电子部件和陶瓷电子部件的制造方法，其中接地电极层可以直接涂覆无铅焊料，而不降低可靠性。 端子电极3设置有通过烧制形成的Cu的接地电极层21，基于Sn-Ag-Cu-Ni-Ge的五个元素的无铅焊料形成的焊料层22和扩散层23 这是由于接地电极层21和焊料层22之间的Ni的扩散而形成的。由于在接地电极层21和焊料层22之间形成有Ni的扩散层23，所以作为 从接地电极层21抑制Cu的浸出.Ni的扩散层23也可以抑制Sn-Cu的易碎金属间化合物的生长。 因此，可以防止接地电极层21和焊料层22之间的接合强度的降低。

    Ion source with uniformity of radial distribution of ion beam intensity
    2.
    发明授权
    Ion source with uniformity of radial distribution of ion beam intensity 有权
    离子源具有离子束强度的径向分布均匀性

    公开(公告)号：US07321198B2

    公开(公告)日：2008-01-22

    申请号：US11445260

    申请日：2006-06-02

    申请人： Naoki Kubota ,  Akihiro Horita

    发明人： Naoki Kubota ,  Akihiro Horita

    IPC分类号： H01J7/24 ,  H01J27/00

    CPC分类号： H01J27/16 ,  H01J37/32357

    摘要： An ion source, comprising: a discharge chamber, in which is formed an opening; a coil, provided outside said discharge chamber, for generating plasma within said discharge chamber; an extraction electrode, which extracts ions in said plasma generated in said discharge chamber from said opening and generates an ion beam; a power supply device, which supplies power to said coil; and a control device, which can repeatedly halt output power output from said power supply device over prescribed intervals, while maintaining a value of said output power at a value, set in advance, which renders radial direction distribution of ion beam intensity of said ion beam uniform.

    摘要翻译： 一种离子源，包括：排出室，其中形成有开口; 设置在所述放电室外部的用于在所述放电室内产生等离子体的线圈; 提取电极，其从所述开口提取在所述放电室中产生的所述等离子体中的离子，并产生离子束; 电源装置，其向所述线圈供电; 以及控制装置，其能够在规定的间隔内反复停止从所述电源装置输出的输出功率，同时将所述输出功率的值保持在预先设定的值，使得所述离子束的离子束强度的径向分布 制服。

    Etching depth measuring device, etching apparatus, and etching depth measuring method
    4.
    发明授权
    Etching depth measuring device, etching apparatus, and etching depth measuring method 有权
    蚀刻深度测量装置，蚀刻装置和蚀刻深度测量方法

    公开(公告)号：US07794563B2

    公开(公告)日：2010-09-14

    申请号：US11445134

    申请日：2006-06-02

    申请人： Naoki Kubota ,  Akihiro Horita

    发明人： Naoki Kubota ,  Akihiro Horita

    IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

    CPC分类号： H01J37/304 ,  H01J37/3053 ,  H01J37/32963 ,  H01J2237/24585 ,  H01J2237/30466 ,  H01J2237/3343

    摘要： An etching depth measuring device for measuring the etching depth of an object to be processed, when etching the object to be processed by using active species present in a plasma, the etching depth measuring device comprising: a chamber in which is formed an introduction port for introducing a part of the active species; a member to be processed which is housed in the chamber and etched by the part of the active species; and a mass detecting element which receives a substance generated from the member to be processed and detects the mass of the received substance.

    摘要翻译： 一种蚀刻深度测量装置，用于测量待处理物体的蚀刻深度，当通过使用存在于等离子体中的活性物质蚀刻待处理物体时，所述蚀刻深度测量装置包括：室，其形成有用于 引入一部分活性物种; 待处理的构件，其被容纳在腔室中并被活性物质的一部分蚀刻; 以及质量检测元件，其接收从被处理物质产生的物质并检测接收物质的质量。

    Etching depth measuring device, etching apparatus, and etching depth measuring method
    5.
    发明申请
    Etching depth measuring device, etching apparatus, and etching depth measuring method 有权
    蚀刻深度测量装置，蚀刻装置和蚀刻深度测量方法

    公开(公告)号：US20070045228A1

    公开(公告)日：2007-03-01

    申请号：US11445134

    申请日：2006-06-02

    申请人： Naoki Kubota ,  Akihiro Horita

    发明人： Naoki Kubota ,  Akihiro Horita

    IPC分类号： G01L21/30 ,  H01L21/306

    CPC分类号： H01J37/304 ,  H01J37/3053 ,  H01J37/32963 ,  H01J2237/24585 ,  H01J2237/30466 ,  H01J2237/3343

    摘要： An etching depth measuring device for measuring the etching depth of an object to be processed, when etching the object to be processed by using active species present in a plasma, the etching depth measuring device comprising: a chamber in which is formed an introduction port for introducing a part of the active species; a member to be processed which is housed in the chamber and etched by the part of the active species; and a mass detecting element which receives a substance generated from the member to be processed and detects the mass of the received substance.

    摘要翻译： 一种蚀刻深度测量装置，用于测量待处理物体的蚀刻深度，当通过使用存在于等离子体中的活性物质蚀刻待处理物体时，所述蚀刻深度测量装置包括：室，其形成有用于 引入一部分活性物种; 待处理的构件，其被容纳在腔室中并被活性物质的一部分蚀刻; 以及质量检测元件，其接收从被处理物质产生的物质并检测接收物质的质量。

    Ceramic electronic component and method for producing same
    6.
    发明授权
    Ceramic electronic component and method for producing same 有权
    陶瓷电子部件及其制造方法

    公开(公告)号：US08254083B2

    公开(公告)日：2012-08-28

    申请号：US12851106

    申请日：2010-08-05

    申请人： Takashi Sakurai ,  Shinya Yoshihara ,  Ko Onodera ,  Hisayuki Abe ,  Masahiko Konno ,  Satoshi Kurimoto ,  Hiroshi Shindo ,  Akihiro Horita ,  Genichi Watanabe ,  Yoshikazu Ito

    发明人： Takashi Sakurai ,  Shinya Yoshihara ,  Ko Onodera ,  Hisayuki Abe ,  Masahiko Konno ,  Satoshi Kurimoto ,  Hiroshi Shindo ,  Akihiro Horita ,  Genichi Watanabe ,  Yoshikazu Ito

    IPC分类号： H01G4/06

    CPC分类号： H01G4/2325 ,  B23K1/0016 ,  H01G4/30

    摘要： There are provided a ceramic electronic component and a method for producing the ceramic electronic component, where a ground electrode layer can be directly coated with lead-free solder without lowering reliabilities. Terminal electrode 3 is provided with a ground electrode layer 21 of Cu having been formed by firing, a solder layer 22 formed of a lead-free solder based on five elements of Sn—Ag—Cu—Ni—Ge, and a diffusion layer 23 having been formed by the diffusion of Ni between the ground electrode layer 21 and the solder layer 22. Because the diffusion layer 23 of Ni is formed between the ground electrode layer 21 and the solder layer 22, the diffusion layer 23, which functions as a barrier layer, suppresses the solder leach of Cu from the ground electrode layer 21. The diffusion layer 23 of Ni can also suppress the growth of fragile intermetallic compounds of Sn—Cu. Therefore, a decrease in the bonding strength between the ground electrode layer 21 and the solder layer 22 can be prevented.

    摘要翻译： 提供陶瓷电子部件和陶瓷电子部件的制造方法，其中接地电极层可以直接涂覆无铅焊料，而不降低可靠性。 端子电极3设置有通过烧制形成的Cu的接地电极层21，基于Sn-Ag-Cu-Ni-Ge的五个元素的无铅焊料形成的焊料层22和扩散层23 这是由于接地电极层21和焊料层22之间的Ni的扩散而形成的。由于在接地电极层21和焊料层22之间形成有Ni的扩散层23，所以作为 从接地电极层21抑制Cu的浸出.Ni的扩散层23也可以抑制Sn-Cu的易碎金属间化合物的生长。 因此，可以防止接地电极层21和焊料层22之间的接合强度的降低。

    Ion source
    7.
    发明申请
    Ion source 有权
    离子源

    公开(公告)号：US20070029501A1

    公开(公告)日：2007-02-08

    申请号：US11445260

    申请日：2006-06-02

    申请人： Naoki Kubota ,  Akihiro Horita

    发明人： Naoki Kubota ,  Akihiro Horita

    IPC分类号： H01J27/00

    CPC分类号： H01J27/16 ,  H01J37/32357

    摘要： An ion source, comprising: a discharge chamber, in which is formed an opening; a coil, provided outside said discharge chamber, for generating plasma within said discharge chamber; an extraction electrode, which extracts ions in said plasma generated in said discharge chamber from said opening and generates an ion beam; a power supply device, which supplies power to said coil; and a control device, which can repeatedly halt output power output from said power supply device over prescribed intervals, while maintaining a value of said output power at a value, set in advance, which renders radial direction distribution of ion beam intensity of said ion beam uniform.

    摘要翻译： 一种离子源，包括：排出室，其中形成有开口; 设置在所述放电室外部的用于在所述放电室内产生等离子体的线圈; 提取电极，其从所述开口提取在所述放电室中产生的所述等离子体中的离子，并产生离子束; 电源装置，其向所述线圈供电; 以及控制装置，其能够在规定的间隔内反复停止从所述电源装置输出的输出功率，同时将所述输出功率的值保持在预先设定的值，使得所述离子束的离子束强度的径向分布 制服。

    Liquid crystal display element with gap uniformity
    9.
    发明授权
    Liquid crystal display element with gap uniformity 失效
    具有间隙均匀性的液晶显示元件

    公开(公告)号：US5594572A

    公开(公告)日：1997-01-14

    申请号：US402335

    申请日：1995-03-10

    申请人： Hiroshi Fukutani ,  Hiroshi Ohnishi ,  Shuichi Uebe ,  Akihiro Horita

    发明人： Hiroshi Fukutani ,  Hiroshi Ohnishi ,  Shuichi Uebe ,  Akihiro Horita

    IPC分类号： G02F1/1339

    CPC分类号： G02F1/13392

    摘要： A liquid crystal display element including at least two kinds of spherical particles as a gap holding material in which each hardness is different in liquid crystal injected into a gap between a pair of substrates. Particle diameter accuracy of each particle is not more than 4%, a particle diameter of the particle with high hardness is not more than a particle diameter of the particle with low hardness, a number of the particle with high hardness to the particle with low hardness is 1 to 4, an average particle diameter of the particle with low hardness to the particle with high hardness is 1 to 1.05 and compression modulus of the particle with high hardness to the particle with low hardness is 1.14 to 14.3. As a result, gap uniformity can be improved. Moreover, occurrence of gap irregularity at the time of low temperature and of impact can be prevented.

    摘要翻译： 一种液晶显示元件，包括至少两种球形颗粒作为间隙保持材料，其中每个硬度在注入到一对基板之间的间隙中的液晶中是不同的。 每个颗粒的粒径精度不大于4％，硬度高的颗粒的粒径不大于具有低硬度的颗粒的粒径，具有低硬度的颗粒具有高硬度的颗粒数 为1〜4，与硬度高的颗粒相比，硬度低的颗粒的平均粒径为1〜1.05，硬度低的颗粒的压缩弹性模量为1.14〜14.3。 结果，可以提高间隙均匀性。 此外，可以防止在低温时和冲击时发生间隙不规则。