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公开(公告)号：US20100289056A1
公开(公告)日：2010-11-18
申请号：US12835772
申请日：2010-07-14
申请人： Akihito Ohno , Masayoshi Takemi , Nobuyuki Tomita
发明人： Akihito Ohno , Masayoshi Takemi , Nobuyuki Tomita
IPC分类号： H01L33/12
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/0021 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063 , H01S5/3072 , H01S5/3077 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser device comprises an n-type cladding layer, a p-type cladding layer, and an active layer which is sandwiched between the n-type cladding layer and the p-type cladding layer. The p-type cladding layer contains magnesium as a dopant impurity. Further, an n-type diffusion blocking layer of a nitride compound semiconductor material located between the active layer and the p-type cladding layer and is InxAlyGa1-x-yN, where x≧0, y≧0, and (x+y)
摘要翻译： 半导体激光器件包括n型包覆层，p型覆层和夹在n型覆层和p型覆层之间的有源层。 p型包覆层含有镁作为掺杂剂杂质。 此外，位于有源层和p型覆层之间的氮化物半导体材料的n型扩散阻挡层是In x Al y Ga 1-x-y N，其中x≥0，y≥0和（x + y） <1。 n型扩散阻挡层优选具有在5×1017cm-3至5×1019cm-3的范围内产生n型导电性的掺杂剂杂质的浓度。
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公开(公告)号：US20080070387A1
公开(公告)日：2008-03-20
申请号：US11941195
申请日：2007-11-16
申请人： Akihito Ohno , Masayoshi Takemi , Nobuyuki Tomita
发明人： Akihito Ohno , Masayoshi Takemi , Nobuyuki Tomita
IPC分类号： H01L21/20
CPC分类号： H01S5/2231 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/2201 , H01S5/2214 , H01S5/34333 , H01S2304/04
摘要： A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1° nor more than 1.0° in a direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.
摘要翻译： 提供了一种能够在氮化镓衬底（GaN衬底）上形成具有优异的平坦度和优异的结晶度的氮化物半导体层的技术，同时提高了使用GaN衬底的半导体器件的可制造性。 制备氮化镓衬底，其具有相对于（0001）面在<1-100>方向上具有不小于0.1°且不大于1.0°的偏角的上表面。 然后，在氮化镓衬底的上表面上堆叠包括n型半导体层的多个氮化物半导体层，以形成诸如半导体激光器的半导体器件。
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3.发明授权Vapor-phase growth apparatus and compound semiconductor device fabricated thereby 失效由此制造的气相生长装置和化合物半导体器件
公开(公告)号：US5800622A
公开(公告)日：1998-09-01
申请号：US593964
申请日：1996-01-30
申请人： Masayoshi Takemi , Yuji Ohkura
发明人： Masayoshi Takemi , Yuji Ohkura
IPC分类号： C23C16/46 , C30B25/10 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C30B25/14 , C30B25/10 , H01L33/0062
摘要： In a thermal radiation type substrate heating system of an MOCVD growth apparatus, a susceptor includes a semi-circular concavity is formed in each of wafer pockets at the forward area in a wafer rotation direction so that P-richness in a crystalline film grown at the gas upstream area is suppressed. Specifically, the conventional wafer holder exhibits a non-uniform temperature distribution so that the surface temperature is high at the gas upstream area and low at the downstream area. On the other hand, the structure according to the present invention realizes a high temperature at a wafer contact area and a low temperature at a wafer non-contact area, thus leading to a uniform surface temperature over the entire gas upstream and downstream areas.
摘要翻译： 在MOCVD生长装置的热辐射型基板加热系统中，基座包括在晶片旋转方向上的前部区域的每个晶片凹槽中形成半圆形凹部，使得在晶片旋转方向上生长的晶体膜的富P浓度 天然气上游地区受到抑制。 具体地说，传统的晶片保持器表现出不均匀的温度分布，使得表面温度在气体上游区域处较高，而在下游区域处表面温度较低。 另一方面，根据本发明的结构在晶片接触区域实现高温，在晶片非接触区域实现低温，从而导致整个气体上游和下游区域的表面温度均匀。
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公开(公告)号：US5748659A
公开(公告)日：1998-05-05
申请号：US557827
申请日：1995-11-14
申请人： Tatsuya Kimura , Masayoshi Takemi
发明人： Tatsuya Kimura , Masayoshi Takemi
CPC分类号： H01S5/227 , H01S5/32 , H01S2301/173 , H01S5/2206 , H01S5/2275 , H01S5/3211 , H01S5/32333
摘要： A method of fabricating a semiconductor laser device includes growing a first conductivity type InGaAsP mass-transport suppressing layer, a first conductivity type InP second lower cladding layer, an InGaAsP active layer, and a second conductivity type InP upper cladding layer on the entire surface of a first conductivity type InP first lower cladding layer, forming a mesa structure serving as a waveguide by etching and removing a portion where a waveguide is to be formed, and forming current blocking layers which confine a current to the waveguide on the opposite sides of the mesa structure by MOCVD. Since the first conductivity type InP second lower cladding layer is sandwiched between the InGaAsP mass-transport suppressing layer and the InGaAsP active layer, mass-transport of In atoms on the opposite sides of the second lower cladding layer is suppressed when the temperature rises before the growth of the current blocking layers. The deformation of opposite sides of the second lower cladding layer is prevented. Therefore, the leakage path width is controlled to a range where the light output power is a maximum, whereby a semiconductor laser device having improved maximum light output power is obtained.
摘要翻译： 一种半导体激光器件的制造方法包括在第一导电型InGaAsP质量传输抑制层，第一导电型InP第二下包层，InGaAsP有源层和第二导电型InP上覆层的整个表面上生长 第一导电型InP第一下包层，通过蚀刻和去除要形成波导的部分形成用作波导的台面结构，以及形成电流阻挡层，其将电流限制在波导的相对侧上 台面结构由MOCVD。 由于第一导电型InP第二下包层夹在InGaAsP质量传递抑制层和InGaAsP有源层之间，因此当第二下包层的相对两侧的In原子的质量传输被抑制在 当前阻挡层的生长。 防止第二下包层的相对侧的变形。 因此，泄漏路径宽度被控制到光输出功率最大的范围，从而获得具有改善的最大光输出功率的半导体激光器件。
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公开(公告)号：US5728215A
公开(公告)日：1998-03-17
申请号：US555707
申请日：1995-11-14
IPC分类号： H01L21/205 , C23C16/04 , H01S5/00 , C30B25/04
CPC分类号： C23C16/042
摘要： A method for forming a film by selective area growth by MDCVD technique includes forming a mask on a semiconductor substrate having a (100) plane, the mask having a mask opening to selectively growing a compound semiconductor layer, and a slit which is narrower than the mask opening in width and controls the growth rate of the compound semiconductor layer at the mask opening; and selectively growing the compound semiconductor layer at a growth rate which is on the mask in the mask opening and the slit.
摘要翻译： 通过MDCVD技术通过选择性区域生长形成膜的方法包括在具有（100）面的半导体衬底上形成掩模，掩模具有掩模开口以选择性地生长化合物半导体层，以及狭缝比 掩模开口宽度并控制化合物半导体层在掩模开口处的生长速率; 并且以掩模开口和狭缝中的掩模上的生长速率选择性地生长化合物半导体层。
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公开(公告)号：US07564076B2
公开(公告)日：2009-07-21
申请号：US12115565
申请日：2008-05-06
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01L33/30 , H01S5/0014 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3201 , H01S5/3213 , H01S5/3215
摘要： A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.
摘要翻译： 激光二极管包括设置在n半导体衬底上且与n半导体衬底晶格匹配的第一n包层，其中第一n包层为n-AlGaInP或n-GaInP; 由第一n包层支撑的n-AlGaAs的第二n包层; 以及设置在所述第一n包层和所述第二n包层之间的插入层，其中所述插入层包括与所述第一n包层相同的元件，所述插入层具有相同的Al和Ga的组成比（和 P）作为第一n包层，并且插入层包含比第一n包层更低的In的组成比。
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公开(公告)号：US20080265275A1
公开(公告)日：2008-10-30
申请号：US12115565
申请日：2008-05-06
CPC分类号： H01S5/22 , H01L33/30 , H01S5/0014 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3201 , H01S5/3213 , H01S5/3215
摘要： A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.
摘要翻译： 激光二极管包括设置在n半导体衬底上且与n半导体衬底晶格匹配的第一n包层，其中第一n包层为n-AlGaInP或n-GaInP; 由第一n包层支撑的n-AlGaAs的第二n包层; 以及设置在所述第一n包层和所述第二n包层之间的插入层，其中所述插入层包括与所述第一n包层相同的元件，所述插入层具有相同的Al和Ga的组成比（和 P）作为第一n包层，并且插入层包含比第一n包层更低的In的组成比。
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公开(公告)号：US20070272935A1
公开(公告)日：2007-11-29
申请号：US11549983
申请日：2006-10-17
CPC分类号： H01S5/22 , H01L33/30 , H01S5/0014 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3201 , H01S5/3213 , H01S5/3215
摘要： A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.
摘要翻译： 激光二极管包括设置在n半导体衬底上且与n半导体衬底晶格匹配的第一n包层，其中第一n包层为n-AlGaInP或n-GaInP; 由第一n包层支撑的n-AlGaAs的第二n包层; 以及设置在所述第一n包层和所述第二n包层之间的插入层，其中所述插入层包括与所述第一n包层相同的元件，所述插入层具有相同的Al和Ga的组成比（和 P）作为第一n包层，并且插入层包含比第一n包层更低的In的组成比。
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公开(公告)号：US07298769B2
公开(公告)日：2007-11-20
申请号：US11410057
申请日：2006-04-25
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2223 , H01S5/2226 , H01S5/2275 , H01S5/3054 , H01S5/3063 , H01S5/3211 , H01S5/3434
摘要： A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017 cm−3 or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical confinement layer, an InGaAsP MQW active layer, an n-type InGaAsP optical confinement layer, and an n-type InP cladding layer are successively stacked. The diffusion of Zn from the p-type InP substrate into the InGaAsP MQW active layer is suppressed. Moreover, a steep doping profile can be formed in the vicinity of the active layer so that deterioration of device characteristics is suppressed.
摘要翻译： 将含有低浓度Zn的p型InP缓冲层和载流子浓度为3×10 -3 -3 -3以下的未掺杂InP缓冲层堆叠在p 型InP底物含Zn。 在未掺杂的InP缓冲层中，依次层叠Mg掺杂的p型InP包层，InGaAsP光限制层，InGaAsP MQW有源层，n型InGaAsP光限制层和n型InP包覆层 。 Zn从p型InP衬底扩散到InGaAsP MQW有源层被抑制。 此外，可以在有源层附近形成陡峭的掺杂分布，从而抑制器件特性的劣化。
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公开(公告)号：US20060268952A1
公开(公告)日：2006-11-30
申请号：US11410057
申请日：2006-04-25
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2223 , H01S5/2226 , H01S5/2275 , H01S5/3054 , H01S5/3063 , H01S5/3211 , H01S5/3434
摘要： A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017 cm−3 or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical confinement layer, an InGaAsP MQW active layer, an n-type InGaAsP optical confinement layer, and an n-type InP cladding layer are successively stacked. The diffusion of Zn from the p-type InP substrate into the InGaAsP MQW active layer is suppressed. Moreover, a steep doping profile can be formed in the vicinity of the active layer so that deterioration of device characteristics is suppressed.
摘要翻译： 将含有低浓度Zn的p型InP缓冲层和载流子浓度为3×10 -3 -3 -3以下的未掺杂InP缓冲层堆叠在p 型InP底物含Zn。 在未掺杂的InP缓冲层中，依次层叠Mg掺杂的p型InP包层，InGaAsP光限制层，InGaAsP MQW有源层，n型InGaAsP光限制层和n型InP包覆层 。 Zn从p型InP衬底扩散到InGaAsP MQW有源层被抑制。 此外，可以在有源层附近形成陡峭的掺杂分布，从而抑制器件特性的劣化。
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