公开(公告)号：US6165264A

公开(公告)日：2000-12-26

申请号：US801249

申请日：1997-02-19

申请人： Kikuo Makita ,  Akiko Gomyo

发明人： Kikuo Makita ,  Akiko Gomyo

IPC分类号： H01L21/20 ,  H01L21/203 ,  C30B25/04

CPC分类号： H01L21/02546 ,  H01L21/0262 ,  H01L21/02639

摘要： The invention provides a method for selective growth of semiconductor crystals, including the step of forming a semiconductor layer in a selected region of a semiconductor substrate by using a mask, the semiconductor layer being controlled with respect to atomic ordering or natural super lattice (NSL). It is possible by the invention to control the energy gap, optical anisotropy and electrically conductive anisotropy of a semiconductor layer, and also possible by the invention to carry out two-dimensional control of material properties in a substrate in accordance with a pattern of a mask.

摘要翻译： 本发明提供一种选择性生长半导体晶体的方法，包括通过使用掩模在半导体衬底的选定区域中形成半导体层的步骤，半导体层相对于原子排序或天然超晶格（NSL）进行控制， 。 通过本发明可以控制半导体层的能隙，光学各向异性和导电各向异性，并且本发明也可以根据掩模的图案对衬底中的材料特性进行二维控制 。

公开(公告)号：US07883911B2

公开(公告)日：2011-02-08

申请号：US12402223

申请日：2009-03-11

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L21/00

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。

公开(公告)号：US20100279457A1

公开(公告)日：2010-11-04

申请号：US12839649

申请日：2010-07-20

申请人： Kazuhiro SHIBA ,  Kikuo Makita ,  Takeshi Nakata

发明人： Kazuhiro SHIBA ,  Kikuo Makita ,  Takeshi Nakata

IPC分类号： H01L31/18

CPC分类号： H01L31/02161 ,  H01L31/035281 ,  H01L31/107 ,  Y02E10/50

摘要： Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.

摘要翻译： 公开了一种具有高再现性和可靠性的半导体光接收装置的制造方法。 具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6， 暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。 电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

公开(公告)号：US5204539A

公开(公告)日：1993-04-20

申请号：US826494

申请日：1992-01-27

申请人： Masayoshi Tsuji ,  Kikuo Makita

发明人： Masayoshi Tsuji ,  Kikuo Makita

IPC分类号： H01L31/0352 ,  H01L31/107

CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/1075 ,  Y10S977/76 ,  Y10S977/761 ,  Y10S977/815

摘要： An avalanche photodiode includes an avalanche multiplication layer of a hetero-periodical structure consisting of alternately provided barrier and well layers. Each barrier layer includes a multi-quantum barrier layer consisting of alternately provided short-width barrier and well layers. The barrier and well layers include respectively first and second III-group elements which meet the following conditions:E.sub.A E.sub.B +E.sub.gBwhere E.sub.A and E.sub.B are average ionization energies of the first and second III-group elements respectively, and E.sub.gA and E.sub.gB are forbidden band gap energies, respectively.

公开(公告)号：US20100200941A1

公开(公告)日：2010-08-12

申请号：US12519701

申请日：2007-11-28

申请人： Junichi Fujikata ,  Daisuke Okamoto ,  Kikuo Makita ,  Kenichi Nishi ,  Keishi Ohashi

发明人： Junichi Fujikata ,  Daisuke Okamoto ,  Kikuo Makita ,  Kenichi Nishi ,  Keishi Ohashi

IPC分类号： H01L31/0232 ,  H01L31/0264 ,  H01L31/108 ,  H01L31/105

CPC分类号： H01L31/1085 ,  B82Y20/00 ,  G02B6/1226 ,  H01L31/0224 ,  H01L31/105

摘要： Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode.

摘要翻译： 旨在提供一种器件结构，这使得光接收灵敏度和光电二极管的高速度兼容。 还提供了在半导体层的表面上形成有导电层的肖特基势垒型光电二极管。 光电二极管构成为能够入射到半导体层的背侧，并且在肖特基（Schottky）周围形成从半导体层的背面入射的光引起表面等离子体共振的周期性结构 光电二极管的结。

公开(公告)号：US20090050933A1

公开(公告)日：2009-02-26

申请号：US11815003

申请日：2005-12-15

申请人： Kazuhiro Shiba ,  Kikuo Makita ,  Takeshi Nakata

发明人： Kazuhiro Shiba ,  Kikuo Makita ,  Takeshi Nakata

IPC分类号： H01L31/0304 ,  H01L21/00

CPC分类号： H01L31/02161 ,  H01L31/035281 ,  H01L31/107 ,  Y02E10/50

摘要： Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.

摘要翻译： 公开了一种具有高再现性和可靠性的半导体光接收装置。 还公开了一种用于制造半导体光接收装置的方法。 具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6， 暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。 电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

公开(公告)号：US07488925B2

公开(公告)日：2009-02-10

申请号：US10579499

申请日：2004-11-17

申请人： Kikuo Makita ,  Toshitaka Torikai

发明人： Kikuo Makita ,  Toshitaka Torikai

IPC分类号： H01J40/14

CPC分类号： G02B6/3586 ,  G02B6/266 ,  G02B6/353 ,  G02B6/3552 ,  G02B6/3568 ,  G02B6/3594 ,  G02F1/015 ,  G02F2001/0155 ,  G02F2203/52

摘要： A light control apparatus includes a part for splitting an input light entering the light control apparatus through an optical fiber, a photoelectric conversion part for converting a monitor light into an electrical signal, and a third part for controlling the opening and closing of an optical transmission path for a signal light based on the electrical signal. The light power of an output light is controlled by the opening and closing amount of the optical transmission path which is controlled depending on the amount of the electrical signal output in accordance with the level of the monitor light. A semiconductor photovoltaic device capable of performing photoelectric conversion without using an external power source is used as the photoelectric conversion part. An optical shutter using a micromachine, or an optical device such as absorption-type modulator or refractive index-type modulator is used as the third part.

摘要翻译： 光控制装置包括：通过光纤分割入射到光控制装置的输入光的部分;将监视光转换为电信号的光电转换部;以及用于控制光传输的开闭的第三部 基于电信号的信号光路径。 输出光的光功率由根据监视光的电平输出的电信号量控制的光传输路径的开闭量来控制。 作为光电转换部使用能够不使用外部电源进行光电转换的半导体光电转换装置。 作为第三部分，使用使用微机械的光学快门或诸如吸收型调制器或折射率型调制器的光学装置。

公开(公告)号：US08148229B2

公开(公告)日：2012-04-03

申请号：US12839649

申请日：2010-07-20

申请人： Kazuhiro Shiba ,  Kikuo Makita ,  Takeshi Nakata

发明人： Kazuhiro Shiba ,  Kikuo Makita ,  Takeshi Nakata

IPC分类号： H01L31/18

CPC分类号： H01L31/02161 ,  H01L31/035281 ,  H01L31/107 ,  Y02E10/50

摘要： Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.

摘要翻译： 公开了一种具有高再现性和可靠性的半导体光接收装置的制造方法。 具体公开了具有台面结构的半导体光接收装置100，其中在半导体衬底2上形成有光吸收层6，雪崩倍增层4和电场弛豫层5.光吸收层6， 暴露在台面结构的侧壁中的雪崩倍增层4和电场弛豫层5被SiNx膜或SiO yNz膜保护。 电场弛豫层5的侧壁面的氢浓度为电场弛豫层5的载流子浓度的15％以下，优选为10％以下。

公开(公告)号：US20090176327A1

公开(公告)日：2009-07-09

申请号：US12402223

申请日：2009-03-11

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L21/28

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。

公开(公告)号：US20070194357A1

公开(公告)日：2007-08-23

申请号：US10599609

申请日：2005-04-05

申请人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

发明人： Keishi Oohashi ,  Tsutomu Ishi ,  Toshio Baba ,  Junichi Fujikata ,  Kikuo Makita

IPC分类号： H01L31/113

CPC分类号： H01L31/022408 ,  H01L31/108

摘要： A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.

摘要翻译： 肖特基光电二极管包括与半导体层接触设置的半导体层和导电膜。 导电膜具有围绕所述孔设置的孔和周期性结构，用于通过入射到膜表面的导电膜的膜表面中的激发表面等离子体产生共振状态。 光电二极管检测由激发的表面等离子体激元在导电膜和半导体层之间的界面处产生的近场光。 孔径的直径小于入射光的波长。