Abstract:
An optically pumped semiconductor-laser (OPS-laser) resonator includes an arrangement for delivering optical pump radiation on an OPS-chip to cause fundamental radiation to circulate in the resonator. The resonator includes second and third-harmonic generating crystals and is arranged deliver third-harmonic radiation. The resonator also includes a stop positioned and configured to stabilize the laser output. The pump radiation arrangement delivers the pump radiation at an angle to the resonator axis and includes wedged GRIN lens arranged such that the pump radiation forms a circular spot on the OPS chip. The third harmonic generating crystal acts as a polarizer for the fundamental radiation and angularly separates fundamental and third harmonic beams.
Abstract:
Laser apparatus including two different, pulsed MOPAs, one having a fundamental wavelength of 1064 nm and the other having a fundamental wavelength of 1564 nm, provide trains of optical pulses. The 1064-nm pulses are frequency tripled to 355 nm and the 1564-nm pulses are frequency doubled to 782 nm. The 355-nm and 782-nm pulses are mixed to provide 244-nm pulses. The 244-nm pulses are mixed with residual 1064-nm pulses to provide 198-nm output pulses of the apparatus. The output pulses can be either digitally modulated or amplitude modulated by controlling the phase relationship between the 1064-nm and 1564-nm pulses.
Abstract:
An optically pumped semiconductor pumped optical parametric oscillator (OPS-pumped OPO) includes an OPS laser resonator and an OPO resonator A portion the OPS laser resonator axis and the OPO resonator axis are collinear. An optically nonlinear crystal is located in the coaxial portion of the resonators and arranged to frequency divide fundamental radiation generated in the OPS laser resonator into signal and idler radiations. In one arrangement, the OPO laser resonator is also an OPS resonator and is arranged to generate radiation at the wavelength of the signal radiation, with the idler radiation having the difference-frequency wavelength of the signal and fundamental radiations.
Abstract:
An optically pumped semiconductor laser includes an active ring-resonator having two or more optically pumped semiconductor (OPS) structures each including a mirror-structure and a multilayer gain-structure. The mirror-structures serve as fold mirrors for the resonator axis. An optically nonlinear crystal may be included in the ring-resonator for generating second-harmonic radiation from fundamental radiation generated in the resonator. Another optically nonlinear crystal may be provided for generating third-harmonic or fourth-harmonic radiation from the second-harmonic radiation. In one example, including a third-harmonic generating crystal, a passive ring-resonator partially coaxial with the active ring-resonator is provided for circulating second-harmonic radiation to provide resonant amplification of the second-harmonic radiation for enhancing third-harmonic conversion. Apparatus for automatically maintaining the passive ring-resonator in a resonant condition for the second-harmonic radiation is disclosed.
Abstract:
External cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure in pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 w) or greater. Inactivity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 raw) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation. Particular features of the OPS-lasers include a heat sink-assembly for cooling the OPS-structure, a folded resonator concept for providing optimum beam size at optically-nonlinear crystals used for frequency conversion, preferred selection of optically-nonlinear materials for frequency-conversion, and compound resonator designs for amplifying second harmonic-radiation for subsequent conversion to third or fourth harmonic radiation.
Abstract:
A laser for delivering laser radiation at a selected one of a plurality of equally-spaced frequencies extending over a frequency range includes a laser resonator defined by two end mirrors. The resonator includes a surface-emitting semiconductor multilayer gain-structure in optical contact with one of the mirrors. A third mirror located in the laser resonator forms an etalon with that mirror. The third mirror is movable for adjusting a peak transmission frequency of the etalon to align with the selected frequency. The resonator end mirrors are spaced apart by an optical distance selected such that the frequency and frequency-spacing of possible longitudinal lasing modes of the resonator correspond with the plurality of equally-spaced frequencies. When the peak transmission frequency of the etalon is aligned with the selected frequency the laser resonator delivers radiation in a single longitudinal mode at the selected frequency.
Abstract:
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation. Particular features of the OPS-lasers include a heat sink-assembly for cooling the OPS-structure, a folded resonator concept for providing optimum beam size at optically-nonlinear crystals used for frequency conversion, preferred selection of optically-nonlinear materials for frequency-conversion, and compound resonator designs for amplifying second harmonic-radiation for subsequent conversion to third or fourth harmonic radiation.
Abstract:
External-cavity optically-pumped semiconductor lasers (OPS-lasers) including an OPS-structure having a mirror-structure surmounted by a surface-emitting, semiconductor multilayer (periodic) gain-structure are disclosed. The gain-structure is pumped by light from diode-lasers. The OPS-lasers can provide fundamental laser output-power of about two Watts (2.0 W) or greater. Intracavity frequency-converted arrangements of the OPS-lasers can provide harmonic laser output-power of about one-hundred milliwatts (100 mW) or greater, even at wavelengths in the ultraviolet region of the electromagnetic spectrum. These high output powers can be provided even in single axial-mode operation. Particular features of the OPS-lasers include a heat sink-assembly for cooling the OPS-structure, a folded resonator concept for providing optimum beam size at optically-nonlinear crystals used for frequency conversion, preferred selection of optically-nonlinear materials for frequency-conversion, and compound resonator designs for amplifying second harmonic-radiation for subsequent conversion to third or fourth harmonic radiation.
Abstract:
A continuously-pumped, repetitively-pulsed, Q-switched laser resonator includes two different gain-media which lase at about the same wavelength. By separately and variably pumping the different gain-media, the laser resonator can efficiently generate output radiation having parameters which stay constant over a much wider range of pulse-repetition frequency than would be possible were either one of the gain-media solely deployed in the resonator. In one embodiment, the laser resonator includes an arrangement for providing near real-time compensation for variations in thermal-lensing in the gain-media resulting from variations in pump-power or pulse-repetition frequency.
Abstract:
A laser includes an optically pumped semiconductor OPS gain-structure. The apparatus has a laser-resonator which includes a mode-locking device for causing the laser to deliver mode-locked pulses. The resonator has a total length selected such that the mode-locked pulses are delivered at a pulse repetition frequency of about 100 MHz. An optical arrangement within the resonator provides that radiation circulating in the resonator makes a plurality of incidences on the OPS gain-structure with a time less than the excited-state lifetime of the gain-structure between successive incidences.