公开(公告)号：US20130040444A1

公开(公告)日：2013-02-14

申请号：US13536443

申请日：2012-06-28

申请人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

发明人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

IPC分类号： H01L21/26

CPC分类号： H01L21/28273 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3211 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

摘要翻译： 本发明的实施例提供了一种用于氮化堆叠材料的改进的装置和方法。 在一个实施例中，远程等离子体系统包括限定用于产生包括离子和自由基的等离子体的第一区域的远程等离子体室，限定用于处理半导体器件的第二区域的处理室，所述处理室包括形成在侧壁 处理室的入口端口与第二区域流体连通，以及设置在远程等离子体室和处理室之间并具有与第一区域和入口流体连通的通道的输送构件，其中输送 构件被构造成使得通道的纵向轴线相对于入口的纵向轴线以大约20度至大约80度的角度相交。

公开(公告)号：US10049881B2

公开(公告)日：2018-08-14

申请号：US13536443

申请日：2012-06-28

申请人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

发明人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/28 ,  H01L21/02 ,  H01L21/321 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

公开(公告)号：US07972441B2

公开(公告)日：2011-07-05

申请号：US11099082

申请日：2005-04-05

申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

IPC分类号： C23C16/40 ,  H01L21/31

CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室被保持在低于20托的低压，并且衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

公开(公告)号：US20080032510A1

公开(公告)日：2008-02-07

申请号：US11764219

申请日：2007-06-17

申请人： Christopher Olsen

发明人： Christopher Olsen

IPC分类号： H01L21/31

CPC分类号： H01L21/02252 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/3185 ,  H01L21/3211 ,  H01L21/823857

摘要： A method of forming a layer comprising silicon and nitrogen on a substrate is provided. The layer may also include oxygen and be used as a silicon oxynitride gate dielectric layer. In one aspect, forming the layer includes exposing a silicon substrate to a plasma of nitrogen and a noble gas to incorporate nitrogen into an upper surface of the substrate, wherein the noble gas is argon, neon, krypton, or xenon. The layer is annealed and then exposed to a plasma of nitrogen to incorporate more nitrogen into the layer. The layer is then further annealed.

摘要翻译： 提供了在衬底上形成包含硅和氮的层的方法。 该层还可以包括氧并用作氮氧化硅栅极电介质层。 一方面，形成层包括将硅衬底暴露于氮等离子体和惰性气体，以将氮掺入到衬底的上表面中，其中惰性气体是氩，氖，氪或氙。 将该层退火，然后暴露于氮的等离子体，以将更多的氮掺入到该层中。 然后将该层进一步退火。

公开(公告)号：US20070093013A1

公开(公告)日：2007-04-26

申请号：US11381960

申请日：2006-05-05

申请人： Thai Chua ,  Cory Czarnik ,  Andreas Hegedus ,  Christopher Olsen ,  Khaled Ahmed ,  Philip Kraus

发明人： Thai Chua ,  Cory Czarnik ,  Andreas Hegedus ,  Christopher Olsen ,  Khaled Ahmed ,  Philip Kraus

IPC分类号： H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/3144 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/823857 ,  H01L29/518

摘要： A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, forming an oxide layer over the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. In one embodiment, at least portions of the method are performed using at least one processing reactor arranged on a cluster tool. In one embodiment, the oxide layer on the substrate is formed by depositing the oxide layer and the oxide layer on the gate dielectric layer is formed by oxidizing at least a portion of the gate dielectric layer using an oxygen-containing plasma. In another embodiment, the oxide layer on the substrate is formed by depositing the oxide layer and the oxide layer on the gate dielectric layer is formed by forming a thermal oxide layer, i.e., depositing the oxide layer on the gate dielectric layer.

摘要翻译： 本文公开了一种用于制造场效应晶体管的栅极电介质的方法。 在一个实施例中，该方法包括以下步骤：去除自然氧化物层，形成氧化物层，在氧化物层上形成栅极电介质层，在栅极电介质层上形成氧化物层，以及退火层和下面的热氧化物/ 硅接口。 任选地，氧化物层可以在形成栅极电介质层之前被氮化。 在一个实施例中，使用布置在群集工具上的至少一个处理反应器来执行该方法的至少部分。 在一个实施例中，通过沉积氧化物层形成衬底上的氧化物层，并且通过使用含氧等离子体氧化至少一部分栅极电介质层来形成栅极电介质层上的氧化物层。 在另一个实施例中，通过沉积氧化物层而形成衬底上的氧化物层，并且通过形成热氧化物层，即将氧化物层沉积在栅极电介质层上，形成栅极电介质层上的氧化物层。

公开(公告)号：US20070010103A1

公开(公告)日：2007-01-11

申请号：US11178749

申请日：2005-07-11

申请人： Thai Chua ,  Christopher Olsen ,  Philip Kraus ,  Khaled Ahmed ,  Cory Czarnik

发明人： Thai Chua ,  Christopher Olsen ,  Philip Kraus ,  Khaled Ahmed ,  Cory Czarnik

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28202 ,  H01L21/28185 ,  H01L21/2822 ,  H01L29/518

摘要： A method of forming a silicon oxynitride gate dielectric. The method includes providing a structure comprising a silicon film formed on a substrate. The structure is exposed to a first plasma comprising a nitrogen source to incorporate nitrogen into the silicon film. The structure is oxidized in an atmosphere comprising nitric oxide to form a silicon oxynitride gate dielectric on the structure. The structure is then exposed to a second plasma comprising a nitrogen source.

摘要翻译： 一种形成氮氧化硅栅极电介质的方法。 该方法包括提供一种包括形成在基底上的硅膜的结构。 该结构暴露于包含氮源的第一等离子体以将氮掺入到硅膜中。 该结构在包含一氧化氮的气氛中氧化，以在该结构上形成氮氧化硅栅极电介质。 然后将该结构暴露于包含氮源的第二等离子体。

公开(公告)号：US20060223315A1

公开(公告)日：2006-10-05

申请号：US11099082

申请日：2005-04-05

申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

IPC分类号： H01L21/302 ,  C23C16/00

CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体例如氢气以提高氧化速率，稀释气体如氮气或O 2 O 2通过另一入口进入腔室。 该室保持在低于20托的低压，并且有利地将基底保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

公开(公告)号：US20120222618A1

公开(公告)日：2012-09-06

申请号：US13193453

申请日：2011-07-28

申请人： Christopher Olsen ,  Canfeng Lai ,  Sundar Ramamurthy ,  Johanes S. Swenberg ,  Wei Liu

发明人： Christopher Olsen ,  Canfeng Lai ,  Sundar Ramamurthy ,  Johanes S. Swenberg ,  Wei Liu

IPC分类号： C23C16/50 ,  C23C16/505 ,  C23C16/511

CPC分类号： C23C16/517 ,  H01J37/32082 ,  H01J37/32357

摘要： Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.

摘要翻译： 描述了用于处理半导体衬底的方法和设备。 处理室包括具有原位等离子体源的衬底支撑件，其可以是面向衬底支撑件的电感，电容，微波或毫米波源，辐射热源可以是一排热灯，间隔开 除了基板支撑。 支撑件可以在原位等离子体源和辐射热源之间，并且可以旋转。 一种方法或处理衬底包括通过将衬底暴露于在处理室中产生的等离子体来形成氧化物层，在腔室中的衬底上进行等离子体氮化处理，使用设置在腔室中的辐射热源热处理衬底，同时 将衬底暴露于室外形成的氧自由基，并通过将衬底暴露于腔室中产生的等离子体而形成电极。

公开(公告)号：US20110250764A1

公开(公告)日：2011-10-13

申请号：US13165502

申请日：2011-06-21

申请人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

发明人： Yoshitaka Yokota ,  Sundar Ramamurthy ,  Vedapuram Achutharaman ,  Cory Czarnik ,  Mehran Behdjat ,  Christopher Olsen

IPC分类号： H01L21/316

CPC分类号： H01L21/67115 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/31658 ,  H01L21/31662 ,  H01L21/67109

摘要： A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.

摘要翻译： 一种用于半导体集成电路中用于氧化材料的方法和装置，例如用于氧化硅以形成电介质栅极。 臭氧发生器能够产生至少70％的臭氧流。 臭氧通过水冷却的注射器进入室内， 其他气体如氢气以提高氧化速率，稀释气体如氮气或O2通过另一个入口进入腔室。 该室被保持在低于20托的低压，并且衬底有利地保持在低于800℃的温度。或者，氧化可以在包括基座加热器和喷头气体喷射器的LPCVD室中执行， 座。

公开(公告)号：US20070212896A1

公开(公告)日：2007-09-13

申请号：US11683984

申请日：2007-03-08

申请人： Christopher Olsen ,  Thai Chua ,  Steven Hung ,  Patricia Liu ,  Tatsuya Sato ,  Alex Paterson ,  Valentin Todorov ,  John Holland

发明人： Christopher Olsen ,  Thai Chua ,  Steven Hung ,  Patricia Liu ,  Tatsuya Sato ,  Alex Paterson ,  Valentin Todorov ,  John Holland

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02175 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/02148 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/316 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513

摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material.

摘要翻译： 本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。 实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。 实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。 通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。