公开(公告)号：US08999440B2

公开(公告)日：2015-04-07

申请号：US13187385

申请日：2011-07-20

Applicant: Aziz Zenasni ,  Johann Coraux ,  Valentina Ivanova-Hristova ,  Stefan Landis ,  Carole Pernel

Inventor： Aziz Zenasni ,  Johann Coraux ,  Valentina Ivanova-Hristova ,  Stefan Landis ,  Carole Pernel

IPC: C23C16/26 ,  B32B3/30 ,  C01B31/04 ,  B81C1/00 ,  H01B1/04 ,  H01L29/16 ,  H01M4/139 ,  H01M4/583 ,  H01M10/04

CPC classification number: C01B31/04 ,  B81C1/00126 ,  C01B32/20 ,  H01B1/04 ,  H01L29/1606 ,  H01M4/139 ,  H01M4/583 ,  H01M10/0436 ,  Y10T29/49815 ,  Y10T428/24752

Abstract: A structure, method of manufacturing a structure, and methods of using a structure including a graphene sheet is disclosed. According to one aspect, the grapheme sheet is provided, on one of the faces of the structure, with a plurality of metal pins. The metal pins being separated from one another by a dielectric medium chosen from air and dielectric materials. The method including the steps of synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins that are disposed on a membrane made from dielectric material or integrated in the membrane. The growth being catalyzed by the metal pins. According to some aspects, the membrane is removed from the structure. The structure may be used, for example, in the fields of micro- and nanoelectronics, micro- and nanoelectronic engineering, spintronics, photovoltaics, light emitting diode display, or the like.

Abstract translation: 公开了一种结构，制造结构的方法以及使用包括石墨烯片的结构的方法。 根据一个方面，在该结构的一个面上设置有多个金属销， 金属销通过选自空气和电介质材料的电介质彼此分离。 该方法包括以下步骤：通过气相催化生长将石墨烯片合成在设置在由电介质材料制成的膜上或集成在膜中的多个金属销上。 生长由金属针催化。 根据一些方面，膜从结构中去除。 该结构可以用于例如微电子学和纳米电子学，微纳米电子工程，自旋电子学，光电子学，发光二极管显示器等领域。

公开(公告)号：US08384069B2

公开(公告)日：2013-02-26

申请号：US12782364

申请日：2010-05-18

Applicant: Carole Pernel ,  Cécilia Dupre

Inventor： Carole Pernel ,  Cécilia Dupre

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/06 ,  H01L31/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC classification number: H01L29/775 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  Y10T428/24331

Abstract: A semiconductor structure includes a support and at least one block provided on the support. The block includes a stack including alternating layers based on a first semiconductor material and layers based on a second semiconductor material different from the first material, the layers presenting greater dimensions than layers such that the stack has a lateral tooth profile and a plurality of spacers filling the spaces formed by the tooth profile, the spacers being made of a third material different from the first material such that each of the lateral faces of the block presents alternating lateral bands based on the first material and alternating lateral bands based on the third material. At least one of the lateral faces of the block is partially coated with a material promoting the growth of nanotubes or nanowires, the catalyst material exclusively coating the lateral bands based on the first material or exclusively coating the lateral bands based on the third material.

Abstract translation: 半导体结构包括支撑件和设置在支撑件上的至少一个块。 该块包括基于第一半导体材料的交替层和基于与第一材料不同的第二半导体材料的层的堆叠，所述层具有比层更大的尺寸，使得堆叠具有侧向齿形和多个间隔物填充 由所述齿形形成的空间，所述间隔件由不同于所述第一材料的第三材料制成，使得所述块的每个侧面基于所述第一材料呈现交替的横向带，并且基于所述第三材料呈交替的横向带。 块体的至少一个侧面部分地涂覆有促进纳米管或纳米线生长的材料，催化剂材料仅基于第一材料专门涂覆侧向带，或仅基于第三材料涂覆侧向带。

公开(公告)号：US08695403B2

公开(公告)日：2014-04-15

申请号：US12842969

申请日：2010-07-23

Applicant: Carole Pernel ,  André Poinard

Inventor： Carole Pernel ,  André Poinard

IPC: H01L41/08

CPC classification number: G01G3/13 ,  G01G3/165

Abstract: A support for a thin element in an electrically conducting or semi-conducting material, one face of which is intended to be put into contact with a liquid or gas medium, the support has a first part provided with a central through-passage with a longitudinal axis, said passage including at least one first and one second portion with a different diameter connected to each other through a shoulder, said shoulder being intended for supporting said thin element; a second part penetrating into the passage with the end opposite to the one intended to be exposed to the liquid solution, capable of maintaining the thin element on the shoulder; and a seal between the thin element and the shoulder.

Abstract translation: 在导电或半导电材料中的薄元件的支撑件，其一个表面旨在与液体或气体介质接触，所述支撑件具有第一部分，该第一部分设置有具有纵向 所述通道包括至少一个具有不同直径的第一和第二部分，所述第一和第二部分通过肩部相互连接，所述肩部用于支撑所述薄元件; 第二部分穿透通道，其端部与旨在暴露于液体溶液的端部相反，能够将薄元件保持在肩部上; 以及薄元件和肩部之间的密封。

公开(公告)号：US20110024291A1

公开(公告)日：2011-02-03

申请号：US12842969

申请日：2010-07-23

Applicant: Carole PERNEL ,  André Poinard

Inventor： Carole PERNEL ,  André Poinard

IPC: G01N27/42

CPC classification number: G01G3/13 ,  G01G3/165

Abstract: A support for a thin element in an electrically conducting or semi-conducting material, one face of which is intended to be put into contact with a liquid or gas medium, the support has a first part provided with a central through-passage with a longitudinal axis, said passage including at least one first and one second portion with a different diameter connected to each other through a shoulder, said shoulder being intended for supporting said thin element; a second part penetrating into the passage with the end opposite to the one intended to be exposed to the liquid solution, capable of maintaining the thin element on the shoulder; and a seal between the thin element and the shoulder.

Abstract translation: 在导电或半导电材料中的薄元件的支撑件，其一个表面旨在与液体或气体介质接触，所述支撑件具有第一部分，该第一部分设置有具有纵向 所述通道包括至少一个具有不同直径的第一和第二部分，所述第一和第二部分通过肩部相互连接，所述肩部用于支撑所述薄元件; 第二部分穿透通道，其端部与旨在暴露于液体溶液的端部相反，能够将薄元件保持在肩部上; 以及薄元件和肩部之间的密封。

公开(公告)号：US20110151607A1

公开(公告)日：2011-06-23

申请号：US12976265

申请日：2010-12-22

Applicant: Stefan Landis ,  Nicolas Chaix ,  Valentina Ivanova-Hristova ,  Carole Pernel

Inventor： Stefan Landis ,  Nicolas Chaix ,  Valentina Ivanova-Hristova ,  Carole Pernel

IPC: H01L51/56

CPC classification number: H01L51/0023 ,  H01L51/5203 ,  H01L51/5262

Abstract: A method for manufacturing an OLED and an electrode for an OLED, said electrode comprising a surface comprising a first dielectric nanostructuration and a second metal nanostructuration, on a substrate, wherein the following successive steps are carried out: a) a metal layer is deposited on a planar surface of a substrate; b) on the metal layer, a dielectric layer comprising said first dielectric nanostructuration which includes cavities which extend from the upper surface of the dielectric layer as far as the upper surface of the metal layer, is prepared; c) the cavities of the first dielectric nanostructuration are at least partially filled with a metal, whereby the second metal nanostructuration is obtained.

Abstract translation: 一种用于制造OLED的OLED和用于OLED的电极的方法，所述电极包括在衬底上的包括第一介电纳米结构和第二金属纳米结构的表面，其中执行以下连续步骤：a）将金属层沉积在 基板的平面; b）在所述金属层上，制备包括所述第一介电纳米结构的电介质层，所述第一介电纳米结构包括从所述电介质层的上表面延伸至所述金属层的上表面的空腔; c）第一介电纳米结构的空腔至少部分地被金属填充，由此获得第二金属纳米结构。

公开(公告)号：US20100295024A1

公开(公告)日：2010-11-25

申请号：US12782364

申请日：2010-05-18

Applicant: Carole Pernel ,  CÉCILIA DUPRE

Inventor： Carole Pernel ,  CÉCILIA DUPRE

IPC: H01L29/775 ,  H01L21/20

CPC classification number: H01L29/775 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  Y10T428/24331

Abstract: A semiconductor structure includes a support and at least one block provided on the support. The block includes a stack including alternating layers based on a first semiconductor material and layers based on a second semiconductor material different from the first material, the layers presenting greater dimensions than layers such that the stack has a lateral tooth profile and a plurality of spacers filling the spaces formed by the tooth profile, the spacers being made of a third material different from the first material such that each of the lateral faces of the block presents alternating lateral bands based on the first material and alternating lateral bands based on the third material. At least one of the lateral faces of the block is partially coated with a material promoting the growth of nanotubes or nanowires, the catalyst material exclusively coating the lateral bands based on the first material or exclusively coating the lateral bands based on the third material.

Abstract translation: 半导体结构包括支撑件和设置在支撑件上的至少一个块。 该块包括基于第一半导体材料的交替层和基于与第一材料不同的第二半导体材料的层的堆叠，所述层具有比层更大的尺寸，使得堆叠具有侧向齿形和多个间隔物填充 由所述齿形形成的空间，所述间隔件由不同于所述第一材料的第三材料制成，使得所述块的每个侧面基于所述第一材料呈现交替的横向带，并且基于所述第三材料呈交替的横向带。 块体的至少一个侧面部分地涂覆有促进纳米管或纳米线生长的材料，催化剂材料仅基于第一材料专门涂覆侧向带，或仅基于第三材料涂覆侧向带。

公开(公告)号：US09515205B2

公开(公告)日：2016-12-06

申请号：US14002854

申请日：2012-03-05

Applicant: Carole Pernel ,  Nicolas Chaix ,  Stefan Landis

Inventor： Carole Pernel ,  Nicolas Chaix ,  Stefan Landis

IPC: H01L31/0236 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/18 ,  H01L21/033 ,  H01L21/288 ,  H01L31/0376

CPC classification number: H01L31/02366 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/2885 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

Abstract: A method for creating electrically conducting or semiconducting patterns on a textured surface including plural reliefs of amplitude greater than or equal to 100 nanometers, including: preparing a substrate during which at least the textured surface of the substrate is made electrically conducting; coating during which at least one layer of an imprintable material is laid on the textured surface, made electrically conducting, of the substrate; pressing a mold including valleys or protrusions to transfer the valleys or the protrusions of the mold into the imprintable material to form patterns therein; removing the mold while leaving the imprint of the patterns in the imprintable material; exposing the textured surface, made electrically conducting, of the substrate, at a bottom of the patterns; and electrically depositing an electrically conducting or semiconducting material into the patterns to form conducting or semiconducting patterns.

Abstract translation: 一种用于在纹理表面上形成导电或半导体图案的方法，包括幅度大于或等于100纳米的多个浮雕，包括：制备基板至少将基板的纹理表面制成导电的基板; 涂层，在该涂层期间，至少一层可压印材料铺设在基材的纹理表面上，使其导电; 压制包括谷或突起的模具以将模具的谷或者突起转移到可压印材料中以在其中形成图案; 移除模具，同时将图案的印记留在可压印材料中; 在图案的底部暴露基底的纹理表面，使其导电; 并将导电或半导体材料电沉积到图案中以形成导电或半导体图案。

公开(公告)号：US20140034125A1

公开(公告)日：2014-02-06

申请号：US14002854

申请日：2012-03-05

Applicant: Carole Pernel ,  Nicolas Chaix ,  Stefan Landis

Inventor： Carole Pernel ,  Nicolas Chaix ,  Stefan Landis

IPC: H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/2885 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/03762 ,  H01L31/0747 ,  H01L31/18 ,  Y02E10/50

Abstract: A method for creating electrically conducting or semiconducting patterns on a textured surface including plural reliefs of amplitude greater than or equal to 100 nanometers, including: preparing a substrate during which at least the textured surface of the substrate is made electrically conducting; coating during which at least one layer of an imprintable material is laid on the textured surface, made electrically conducting, of the substrate; pressing a mold including valleys or protrusions to transfer the valleys or the protrusions of the mold into the imprintable material to form patterns therein; removing the mold while leaving the imprint of the patterns in the imprintable material; exposing the textured surface, made electrically conducting, of the substrate, at a bottom of the patterns; and electrically depositing an electrically conducting or semiconducting material into the patterns to form conducting or semiconducting patterns.

Abstract translation: 一种用于在纹理表面上形成导电或半导体图案的方法，包括幅度大于或等于100纳米的多个浮雕，包括：制备基板至少将基板的纹理表面制成导电的基板; 涂层，在该涂层期间，至少一层可压印材料铺设在基材的纹理表面上，使其导电; 压制包括谷或突起的模具以将模具的谷或者突起转移到可压印材料中以在其中形成图案; 移除模具，同时将图案的印记留在可压印材料中; 在图案的底部暴露基底的纹理表面，使其导电; 并将导电或半导体材料电沉积到图案中以形成导电或半导体图案。

公开(公告)号：US20120040145A1

公开(公告)日：2012-02-16

申请号：US13187385

申请日：2011-07-20

Applicant: Aziz Zenasni ,  Johann Coraux ,  Valentina Ivanova-Hristova ,  Stefan Landis ,  Carole Pernel

Inventor： Aziz Zenasni ,  Johann Coraux ,  Valentina Ivanova-Hristova ,  Stefan Landis ,  Carole Pernel

IPC: B32B3/30 ,  H01L31/02 ,  B23P19/00 ,  C23C16/26 ,  C25B9/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: C01B31/04 ,  B81C1/00126 ,  C01B32/20 ,  H01B1/04 ,  H01L29/1606 ,  H01M4/139 ,  H01M4/583 ,  H01M10/0436 ,  Y10T29/49815 ,  Y10T428/24752

Abstract: A structure, method of manufacturing a structure, and methods of using a structure including a graphene sheet is disclosed. According to one aspect, the grapheme sheet is provided, on one of the faces of the structure, with a plurality of metal pins. The metal pins being separated from one another by a dielectric medium chosen from air and dielectric materials. The method including the steps of synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins that are disposed on a membrane made from dielectric material or integrated in the membrane. The growth being catalysed by the metal pins. According to some aspects, the membrane is removed from the structure. The structure may be used, for example, in the fields of micro- and nanoelectronics, micro- and nanoelectronic engineering, spintronics, photovoltaics, light emitting diode display, or the like.

Abstract translation: 公开了一种结构，制造结构的方法以及使用包括石墨烯片的结构的方法。 根据一个方面，在该结构的一个面上设置有多个金属销， 金属销通过选自空气和电介质材料的电介质彼此分离。 该方法包括以下步骤：通过气相催化生长将石墨烯片合成在设置在由电介质材料制成的膜上或集成在膜中的多个金属销上。 生长由金属针催化。 根据一些方面，膜从结构中去除。 该结构可以用于例如微电子学和纳米电子学，微纳米电子工程，自旋电子学，光电子学，发光二极管显示器等领域。