公开(公告)号：US20130215689A1

公开(公告)日：2013-08-22

申请号：US13402429

申请日：2012-02-22

Applicant: Manish Chandra Joshi ,  Parvinder Kumar Rana ,  Lakshmikantha Vakwadi Holla

Inventor： Manish Chandra Joshi ,  Parvinder Kumar Rana ,  Lakshmikantha Vakwadi Holla

IPC: G11C7/22

CPC classification number: G11C11/419 ,  G11C8/18

Abstract: An 8T memory bit cell receives a clock signal and read and write address signals. A read address latch/clock circuit receives the clock signal and the read address signals and initiates a read operation during a first clock cycle state. A write address flip-flop/clock circuit receives the clock signal and the write address signals and initiates a write operation during a second clock cycle state. An inverter receives and inverts the clock signal and applies the inverted clock signal to the write address flip-flop/clock circuit. The read address latch/clock circuit initiates a read word line precharge operation during the second clock cycle state and a write word line precharge operation during the first clock cycle state. The write address flip-flop/clock circuit may also include a loose self-timer to end a write cycle is a clock signal continues beyond a predetermined time.

Abstract translation: 8T存储器单元接收时钟信号并读取和写入地址信号。 读地址锁存/时钟电路接收时钟信号和读地址信号，并在第一时钟周期状态期间启动读操作。 写地址触发器/时钟电路在第二时钟周期状态期间接收时钟信号和写入地址信号并发起写入操作。 逆变器接收并反相时钟信号，并将反相时钟信号施加到写入地址触发器/时钟电路。 读地址锁存/时钟电路在第二时钟周期状态期间启动读字线预充电操作和在第一时钟周期状态期间的写字线预充电操作。 写地址触发器/时钟电路还可以包括松开的自拍以结束写周期是时钟信号持续超过预定时间。

公开(公告)号：US07807225B2

公开(公告)日：2010-10-05

申请号：US11698623

申请日：2007-01-26

Applicant: Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  John W. Hartzell

Inventor： Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  John W. Hartzell

IPC: C23C16/00

CPC classification number: G02B1/10 ,  C23C16/308 ,  C23C16/509 ,  G02B1/11

Abstract: A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y 0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.

Abstract translation: 提供了用于形成SiOXNY薄膜的高密度等离子体方法。 该方法提供衬底并引入硅（Si）前体。 使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺将薄膜沉积在衬底上。 结果，形成SiOXNY薄膜，其中（X + Y <2和Y> 0）。 SiOXNY薄膜可以是化学计量的或非化学计量的。 SiOXNY薄膜可以分级，这意味着X和Y的值随SiOXNY薄膜的厚度而变化。 此外，该方法能够实现SiOXNY薄膜多层结构的原位沉积，其中不同的层可以是化学计量的，非化学计量的，分级的，以及上述类型的SiOXNY薄膜的组合。

公开(公告)号：US07759736B2

公开(公告)日：2010-07-20

申请号：US11524783

申请日：2006-09-21

Applicant: Pooran Chandra Joshi

Inventor： Pooran Chandra Joshi

IPC: H01L27/01

CPC classification number: H01L29/78603 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78609

Abstract: A deposition oxide interface with improved oxygen bonding and a method for bonding oxygen in an oxide layer are provided. The method includes depositing an M oxide layer where M is a first element selected from a group including elements chemically defined as a solid and having an oxidation state in a range of +2 to +5, plasma oxidizing the M oxide layer at a temperature of less than 400° C. using a high density plasma source, and in response to plasma oxidizing the M oxide layer, improving M-oxygen bonding in the M oxide layer. The plasma oxidation process diffuses excited oxygen radicals into the oxide layer. The plasma oxidation is performed at specified parameters including temperature, power density, pressure, process gas composition, and process gas flow. In some aspects of the method, M is silicon, and the oxide interface is incorporated into a thin film transistor.

Abstract translation: 提供具有改善的氧键的沉积氧化物界面和氧化层中的氧键合方法。 该方法包括沉积M氧化物层，其中M是选自化学上定义为固体且具有+2至+5范围内的氧化态的元素的第一元素，在氧化层中氧化氧化层的温度为 小于400℃，使用高密度等离子体源，并且响应于等离子体氧化M氧化物层，改善M氧化物层中的M-氧键。 等离子体氧化过程将激发的氧自由基扩散到氧化物层中。 等离子体氧化在包括温度，功率密度，压力，工艺气体成分和工艺气体流量在内的特定参数下进行。 在该方法的一些方面，M是硅，并且氧化物界面被结合到薄膜晶体管中。

公开(公告)号：US07723913B2

公开(公告)日：2010-05-25

申请号：US12168771

申请日：2008-07-07

Applicant: Vincenzo Casasanta ,  Apostolos T. Voutsas ,  Pooran Chandra Joshi

Inventor： Vincenzo Casasanta ,  Apostolos T. Voutsas ,  Pooran Chandra Joshi

IPC: H01L21/00 ,  H01L21/20 ,  H01J1/62 ,  H01J9/24

CPC classification number: C23C16/30 ,  C23C16/24 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02532 ,  H01L21/02595

Abstract: A silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device and associated fabrication process are presented. The method provides a substrate bottom electrode, and forms a plurality of Si nanocrystal embedded SiOx film layers overlying the bottom electrode, where X is less than 2. Each SiOx film layer has a Si excess concentration in a range of about 5 to 30%. The outside film layers sandwich an inner film layer having a lower concentration of Si nanocrystals. Alternately stated, the outside Si nanocrystal embedded SiOx film layers have a higher electrical conductivity than a sandwiched inner film layer. A transparent top electrode is formed over the plurality of Si nanocrystal embedded SiOx film layers. The plurality of Si nanocrystal embedded SiOx film layers are deposited using a high density plasma-enhanced chemical vapor deposition (HD PECVD) process. The HD PECVD process initially deposits SiOx film layers, which are subsequently annealed.

Abstract translation: 介绍了一种硅（Si）纳米晶体内置Si氧化物电致发光（EL）器件及其制造工艺。 该方法提供衬底底部电极，并且形成多个覆盖底部电极的Si纳米晶体的嵌入的SiO x膜层，其中X小于2.每个SiO x膜层的Si过量浓度在约5-30％的范围内。 外层膜层叠具有较低浓度的Si纳米晶体的内膜层。 或者说，外部Si纳米晶体埋入的SiOx膜层具有比夹层内膜层更高的导电性。 在多个Si纳米晶体嵌入的SiOx膜层上形成透明顶部电极。 使用高密度等离子体增强化学气相沉积（HD PECVD）工艺沉积多个Si纳米晶体嵌入的SiOx膜层。 HD PECVD工艺首先沉积SiO x膜层，随后退火。

公开(公告)号：US07723781B2

公开(公告)日：2010-05-25

申请号：US12108333

申请日：2008-04-23

Applicant: Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  John W. Hartzell

Inventor： Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  John W. Hartzell

IPC: H01L29/78

CPC classification number: H01L29/78642 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/0234 ,  H01L21/049 ,  H01L21/31612 ,  H01L29/66666 ,  H01L29/6675

Abstract: A method is provided for forming a low-temperature vertical gate insulator in a vertical thin-film transistor (V-TFT) fabrication process. The method comprises: forming a gate, having vertical sidewalls and a top surface, overlying a substrate insulation layer; depositing a silicon oxide thin-film gate insulator overlying the gate; plasma oxidizing the gate insulator at a temperature of less than 400° C., using a high-density plasma source; forming a first source/drain region overlying the gate top surface; forming a second source/drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall, in the gate insulator interposed between the first and second source/drain regions. When the silicon oxide thin-film gate insulator is deposited overlying the gate a Si oxide layer, a low temperature deposition process can be used, so that a step-coverage of greater than 65% can be obtained.

Abstract translation: 提供一种用于在垂直薄膜晶体管（V-TFT）制造工艺中形成低温垂直栅极绝缘体的方法。 该方法包括：形成具有垂直侧壁和顶表面的栅极，覆盖衬底绝缘层; 沉积覆盖栅极的氧化硅薄膜栅极绝缘体; 使用高密度等离子体源在低于400℃的温度下等离子体氧化栅极绝缘体; 形成覆盖所述栅极顶表面的第一源极/漏极区域; 在第一栅极侧壁附近形成覆盖衬底绝缘层的第二源极/漏极区域; 以及在位于第一和第二源极/漏极区之间的栅极绝缘体中形成覆盖第一栅极侧壁的沟道区。 当氧化硅薄膜栅极绝缘体沉积在栅极上覆盖Si氧化物层时，可以使用低温沉积工艺，从而可以获得大于65％的阶梯覆盖率。

公开(公告)号：US20080224164A1

公开(公告)日：2008-09-18

申请号：US12126430

申请日：2008-05-23

Applicant: Jiandong Huang ,  Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  Hao Zhang

Inventor： Jiandong Huang ,  Pooran Chandra Joshi ,  Apostolos T. Voutsas ,  Hao Zhang

IPC: H01L33/00 ,  H01L21/28 ,  H01J1/63

CPC classification number: C23C16/30 ,  C23C16/401 ,  C23C16/402 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31608 ,  H01L33/005 ,  H01L33/18 ,  H01L33/34

Abstract: A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, Si3Nx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.

Abstract translation: 使用硅（Si）纳米晶体Si绝缘膜的发光器件具有相关的制造方法。 该方法提供掺杂半导体或金属底电极。 使用高密度等离子体增强化学气相沉积（HDPECVD）工艺，淀积厚度在30至200纳米（nm）范围内的半导体电极上的Si绝缘体膜。 例如，膜可以是SiO x，其中X小于2，Si 3 N x，其中X小于4，或SiC x，其​​中X小于1.Si绝缘膜退火，结果Si纳米晶体为 在电影中形成。 然后，形成覆盖Si绝缘膜的透明金属电极。 退火的Si纳米晶SiO x膜具有小于20伏特的导通电压，如关于大于0.03瓦/平方米的表面发射功率所限定的。

公开(公告)号：US20080079663A1

公开(公告)日：2008-04-03

申请号：US11821148

申请日：2007-06-22

Applicant: John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele

Inventor： John W. Hartzell ,  Pooran Chandra Joshi ,  Paul J. Schuele

IPC: G09G3/20

CPC classification number: G06Q10/08 ,  G06Q40/04

Abstract: A pixel-by-pixel, digitally-addressable, pixelated, precursor, fluid-assay, active-matrix micro-structure including plural pixels formed on a substrate, wherein each pixel includes (a) at least one non-functionalized, digitally-addressable assay sensor, and (b), disposed operatively adjacent this sensor, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the at least one assay sensor, an ambient electromagnetic field environment which is structured to assist in functionalizing, as a possession on said at least one assay sensor, at least one digitally-addressable assay site which will display an affinity for a selected fluid-assay material.

Abstract translation: 逐像素，可数字寻址，像素化，前体，流体测定，包括形成在衬底上的多个像素的有源矩阵微结构，其中每个像素包括（a）至少一个非功能化的，可数字寻址的 和（b），其可操作地邻近该传感器设置，可数字寻址和激励的电磁场产生结构，其被选择性地激励以在所述至少一个测定传感器附近产生环境电磁场环境，所述环境电磁场环境被构造 在所述至少一个测定传感器上辅助功能化至少一个可显示对所选择的流体测定材料的亲和性的可数字寻址的测定位点。

公开(公告)号：US06516065B1

公开(公告)日：2003-02-04

申请号：US09247848

申请日：1999-02-11

Applicant: Chandra Joshi ,  Anthony Noerpel ,  Chi-Jiun Su

Inventor： Chandra Joshi ,  Anthony Noerpel ,  Chi-Jiun Su

IPC: H04K100

CPC classification number: H04B7/18565 ,  H04L9/0637 ,  H04L9/12 ,  H04L2209/80

Abstract: A mobile satellite communication system is provided to control the transfer of a terminal for a single-hop call from at least one of a clear mode and a ciphered mode with respect to a gateway station to a ciphered mode with respect to a satellite link connecting the terminal with another terminal for a single-hop, terminal-to-terminal call using a cipher key and an encryption algorithm common to the terminal and the other terminal. Frame number offset data, which indicates a mapping delay between received and transmitted time slots at the satellite, is provided to both terminals in a terminal-to-terminal call for ciphering synchronization.

Abstract translation: 提供了一种移动卫星通信系统，以便相对于将链路连接的卫星链路相对于网关站至清除模式和加密模式中的至少一个来控​​制用于单跳呼叫的终端的传输 终端与另一个终端进行单跳，终端到终端呼叫，使用密码和终端和另一终端共用的加密算法。 指示在卫星的接收和发送的时隙之间的映射延迟的帧号偏移数据被提供给用于加密同步的终端到终端呼叫中的两个终端。

公开(公告)号：US06353738B1

公开(公告)日：2002-03-05

申请号：US09247845

申请日：1999-02-11

Applicant: Chandra Joshi ,  Anthony Noerpel ,  Chi-Jiun Su

Inventor： Chandra Joshi ,  Anthony Noerpel ,  Chi-Jiun Su

IPC: H04Q720

CPC classification number: H04B7/18558 ,  H04B7/18532

Abstract: An MSAT system is provided which optimizes satellite resources when implementing a single-hop TtT call. The system allocates satellite channels and signaling channels for a single-hop TtT call to the participating terminals at an early stage during the call set-up procedure such that only a single pair of satellite channels are assigned to each of the terminals for call establishment and for use during the call, as opposed to two pairs of satellite channels. A test message for signaling channel (e.g., TTCH) validation is transmitted from the network (e.g., from a gateway station controller) to each of the terminals.

Abstract translation: 提供了一种实现单跳TtT呼叫时优化卫星资源的MSAT系统。 在呼叫建立过程中，系统在早期阶段将参与终端的单跳TtT呼叫的卫星信道和信令信道分配给卫星信道，使得只有一对卫星信道被分配给每个终端进行呼叫建立， 在通话期间使用，而不是两对卫星频道。 从网络（例如，从网关站控制器）向每个终端发送用于信令信道（例如，TTCH）验证的测试消息。

公开(公告)号：US06314290B1

公开(公告)日：2001-11-06

申请号：US09247847

申请日：1999-02-11

Applicant: Chandra Joshi ,  Anthony Noerpel ,  Chi-Jiun Su ,  Dave Roos

Inventor： Chandra Joshi ,  Anthony Noerpel ,  Chi-Jiun Su ,  Dave Roos

IPC: H04Q720

CPC classification number: H04B7/18558

Abstract: A mobile satellite (MSAT) system is provided for establishing a single-hop terminal-to-terminal call between two terminals. The MSAT system maintains a signaling path between each terminal and a gateway station during the terminal-to-terminal call although a call path between the mobile switching center and the originating terminal is blocked by the satellite. During single-hop call establishment, satellite channels for the terminal-to-terminal call path and for signaling are allocated. The allocated channels are assigned when a direct satellite link for the terminal-to-terminal call is established; otherwise, the call can proceed as a double-hop call using previously assigned satellite channels. A verification signal is sent on the direct satellite link which is for processing by the terminals and which contains information that causes the signal to be ignored by a gateway station. During a single-hop terminal-to-terminal call, signaling from a destination gateway station to an originating terminal at another gateway station is sent via an intranetwork communication system connecting traffic control subsystems in different gateway stations and the satellite channels allocated to the originating terminal

Abstract translation: 提供移动卫星（MSAT）系统，用于在两个终端之间建立单跳终端到终端呼叫。 尽管移动交换中心和始发终端之间的呼叫路径被卫星阻挡，但在终端到终端呼叫期间，MSAT系统维护每个终端与网关站之间的信令路径。 在单跳呼叫建立期间，分配用于终端到终端呼叫路径和信令的卫星信道。 当终端到终端呼叫的直接卫星链路建立时，分配的信道被分配; 否则，呼叫可以使用以前分配的卫星信道作为双跳呼叫进行。 在由终端进行处理的直接卫星链路上发送验证信号，其中包含导致信号被网关站忽略的信息。 在单跳终端到终端呼叫中，通过连接不同网关站中的业务控制子系统和分配给始发终端的卫星信道的内网通信系统来发送从目的地网关站到另一个网关站的始发终端的信令