摘要:
A target device includes a circuit board and a detection board is located at the front side of the circuit board and has multiple detection areas which are electrically connected with the circuit board. A buffering board is made by transparent and soft material, and located at the front side of the detection board. A first display board and a second display board are electrically connected to the circuit board and located on the top of the detection board. The first display board displays the individual value of each of the detection areas that is hit. The second display board displays the sum of the individual values of the detection areas that are hit. The circuit board, the detection board, the buffering board, the first display board and the second display board are accommodated in a case.
摘要:
A shooting target structure for a toy gun includes a hollow box and a target transmission device inside the box. The target transmission device includes a power member and a conveying member driven by the power member to move at least one target provided on the conveying member. The box has a buffer effect to prevent BB pullets from rebounding outward after shooting. The bottom of the box is inclined and has a pullet collection trough to collect the BB pullets automatically. The box is provided with a display unit and a sound member to cooperate with an electronic signal for the shooter to know whether the target is hit or not and to know the scoring. The present invention is convenient and practical and amusing for shooting.
摘要:
A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench.
摘要:
A method of selectively removing a patterned hard mask is described. A substrate with a patterned target layer thereon is provided, wherein the patterned target layer includes a first target pattern and at least one second target pattern, and the patterned hard mask includes a first mask pattern on the first target pattern and a second mask pattern on the at least one second target pattern. A first photoresist layer is formed covering the first mask pattern. The sidewall of the at least one second target pattern is covered by a second photoresist layer. The second mask pattern is removed using the first photoresist layer and the second photoresist layer as a mask.
摘要:
The present invention relates to zinc porphyrin-based photosensitive dyes, specifically to zinc porphyrin-based photosensitive dyes with green transparency. The photosensitive dyes exhibit high push-pull ability in the zinc porphyrin-based structure, higher absorption and power conversion efficiency. The photosensitive dyes are used in the manufacture of dye-sensitive solar cells.
摘要:
A removing method of a hard mask includes the following steps. A substrate is provided. At least two MOSFETs are formed on the substrate. An isolating structure is formed in the substrate and located between the at least two MOSFETs. Each of the MOSEFTs includes a gate insulating layer, a gate, a spacer and a hard mask on the gate. A protecting structure is formed on the isolating structure and the hard mask is exposed from the protecting structure. The exposed hard mask is removed to expose the gate.
摘要:
It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.
摘要:
Methods for using 6-aminoimidazo[1,2-b]pyridazine analogs are disclosed herein to treat rho kinase-mediated diseases or rho kinase-mediated conditions, including controlling intraocular pressure and treating glaucoma, are disclosed. Ophthalmic pharmaceutical compositions useful in the treatment of eye diseases such as glaucoma, and additionally useful for controlling intraocular pressure, the compositions comprising an effective amount of 6-aminoimidazo[1,2-b]pyridazine analogs, are disclosed herein.
摘要:
A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.