TARGET DEVICE FOR TOY GUN
    2.
    发明申请
    TARGET DEVICE FOR TOY GUN 审中-公开
    目标玩具玩具

    公开(公告)号:US20150145213A1

    公开(公告)日:2015-05-28

    申请号:US14089829

    申请日:2013-11-26

    发明人: CHIH-WEI CHIU

    IPC分类号: A63F9/02 F41J5/18

    CPC分类号: F41J5/18 F41J5/04 F41J13/02

    摘要: A target device includes a circuit board and a detection board is located at the front side of the circuit board and has multiple detection areas which are electrically connected with the circuit board. A buffering board is made by transparent and soft material, and located at the front side of the detection board. A first display board and a second display board are electrically connected to the circuit board and located on the top of the detection board. The first display board displays the individual value of each of the detection areas that is hit. The second display board displays the sum of the individual values of the detection areas that are hit. The circuit board, the detection board, the buffering board, the first display board and the second display board are accommodated in a case.

    摘要翻译: 目标装置包括电路板,检测板位于电路板的前侧,并且具有与电路板电连接的多个检测区域。 缓冲板由透明柔软的材料制成,位于检测板的正面。 第一显示板和第二显示板电连接到电路板并位于检测板的顶部。 第一个显示板显示被击中的每个检测区域的各个值。 第二显示板显示被击中的检测区域的各个值的总和。 电路板,检测板,缓冲板,第一显示板和第二显示板容纳在壳体中。

    SHOOTING TARGET STRUCTURE FOR TOY GUN
    3.
    发明申请
    SHOOTING TARGET STRUCTURE FOR TOY GUN 审中-公开
    拍摄玩具的目标结构

    公开(公告)号:US20140027982A1

    公开(公告)日:2014-01-30

    申请号:US13945899

    申请日:2013-07-19

    发明人: CHIH-WEI CHIU

    IPC分类号: F41J9/00

    摘要: A shooting target structure for a toy gun includes a hollow box and a target transmission device inside the box. The target transmission device includes a power member and a conveying member driven by the power member to move at least one target provided on the conveying member. The box has a buffer effect to prevent BB pullets from rebounding outward after shooting. The bottom of the box is inclined and has a pullet collection trough to collect the BB pullets automatically. The box is provided with a display unit and a sound member to cooperate with an electronic signal for the shooter to know whether the target is hit or not and to know the scoring. The present invention is convenient and practical and amusing for shooting.

    摘要翻译: 一种用于玩具枪的射击目标结构包括一个中空盒和一个目标传送装置。 目标传动装置包括动力构件和由动力构件驱动的运送构件,以移动设置在输送构件上的至少一个目标。 盒子具有缓冲效果,以防止BB小孩在拍摄后向外反弹。 盒子底部倾斜,并有一个小母鸡收集槽,自动收集BB小母鸡。 该盒子设置有显示单元和声音构件,以配合用于射手的电子信号,以知道目标是否被击中并且知道得分。 本发明方便实用,拍摄有趣。

    Semiconductor device having metal gate and manufacturing method thereof
    4.
    发明授权
    Semiconductor device having metal gate and manufacturing method thereof 有权
    具有金属栅极的半导体器件及其制造方法

    公开(公告)号:US08564063B2

    公开(公告)日:2013-10-22

    申请号:US12962624

    申请日:2010-12-07

    IPC分类号: H01L29/78

    摘要: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench.

    摘要翻译: 制造具有金属栅极的半导体器件的方法包括提供至少具有虚拟栅极的基板,覆盖伪栅极的侧壁的牺牲层和暴露其上形成的伪栅极顶部的电介质层,形成覆盖侧壁的牺牲层 形成在基板上暴露伪栅极的顶部的电介质层,执行第一蚀刻工艺以去除围绕虚拟栅极顶部的牺牲层的一部分,以形成至少第一凹部 ,并执行第二蚀刻处理以去除伪栅极以形成第二凹部。 第一凹部和第二凹部构成T形栅极沟槽。

    Method of selectively removing patterned hard mask
    5.
    发明授权
    Method of selectively removing patterned hard mask 有权
    选择性去除图案化硬掩模的方法

    公开(公告)号:US08486842B2

    公开(公告)日:2013-07-16

    申请号:US12901453

    申请日:2010-10-08

    IPC分类号: H01L21/302

    摘要: A method of selectively removing a patterned hard mask is described. A substrate with a patterned target layer thereon is provided, wherein the patterned target layer includes a first target pattern and at least one second target pattern, and the patterned hard mask includes a first mask pattern on the first target pattern and a second mask pattern on the at least one second target pattern. A first photoresist layer is formed covering the first mask pattern. The sidewall of the at least one second target pattern is covered by a second photoresist layer. The second mask pattern is removed using the first photoresist layer and the second photoresist layer as a mask.

    摘要翻译: 描述了选择性地去除图案化的硬掩模的方法。 提供了其上具有图案化目标层的衬底,其中所述图案化目标层包括第一目标图案和至少一个第二目标图案,并且所述图案化硬掩模包括第一目标图案上的第一掩模图案和第二掩模图案 所述至少一个第二目标图案。 形成覆盖第一掩模图案的第一光致抗蚀剂层。 所述至少一个第二目标图案的侧壁被第二光致抗蚀剂层覆盖。 使用第一光致抗蚀剂层和第二光致抗蚀剂层作为掩模去除第二掩模图案。

    Plasma processing method and plasma processing apparatus
    8.
    发明授权
    Plasma processing method and plasma processing apparatus 失效
    等离子体处理方法和等离子体处理装置

    公开(公告)号:US07858155B2

    公开(公告)日:2010-12-28

    申请号:US11666773

    申请日:2005-10-27

    IPC分类号: A61N5/00 G21G5/00

    摘要: It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.

    摘要翻译: 本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。 通过排气孔12,通过作为排气装置的涡轮分子泵3排出,通过气体入口11将气体从气体供给装置2引入真空容器1。真空容器1内的压力保持在 通过压力调节阀4的规定值。13.56MHz的高频电力从高频电源5供给到靠近与样品电极6相对的电介质窗7的线圈8, 在真空容器1中产生耦合等离子体。提供用于向样品电极6提供高频电力的高频电源10,并且用作用于控制样品电极6的电位的电压源。表面晶体 通过改善样品电极6的结构,使硅晶片9的层成为无定形。

    Method for introducing impurities and apparatus for introducing impurities
    10.
    发明授权
    Method for introducing impurities and apparatus for introducing impurities 失效
    引入杂质的方法和引入杂质的装置

    公开(公告)号:US07709362B2

    公开(公告)日:2010-05-04

    申请号:US11153572

    申请日:2005-06-15

    IPC分类号: H01L21/265

    摘要: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

    摘要翻译: 用于引入杂质的方法包括在半导体衬底的表面形成非晶层的步骤,以及在半导体衬底上形成非晶化的浅杂质引入层的步骤以及因此使用的装置。 特别地,用于形成非晶层的步骤是用于将等离子体照射到半导体衬底的表面的步骤,并且用于形成浅掺杂杂质的层的步骤是将杂质引入已经被制成无定形的表面的步骤。