公开(公告)号：US5978138A

公开(公告)日：1999-11-02

申请号：US50647

申请日：1998-03-30

Applicant: Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi ,  Woo-sung Han ,  Chang-jin Sohn

Inventor： Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi ,  Woo-sung Han ,  Chang-jin Sohn

IPC: G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G02B24/44 ,  G02B5/18 ,  G03B27/54

CPC classification number: G03F7/70125 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2002 ,  G03F7/70241 ,  G03F7/70283 ,  G03F1/26

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+.first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Abstract translation: 投影方法使用用于半导体器件的光刻工艺的改进的照明方法，并且投影系统和掩模使用投影方法。 通过去除通过聚光透镜的光的垂直入射分量来曝光物体。 零级衍射光破坏性地影响，并且 - / +一级衍射光的倾斜分量建设性地干扰。 斜入射分量光照射其上形成有图案的掩模。 光的垂直入射分量由于光栅掩模或形成在常规掩模背面上的光栅图案而被光的相位差除去。 由于增加的对比度，光刻工艺的分辨率得到改善，并且焦点的深度也增加。 因此，可以使用常规投影曝光系统形成用于64Mb DRAM的图案。

公开(公告)号：US5808796A

公开(公告)日：1998-09-15

申请号：US827881

申请日：1997-04-07

Applicant: Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi ,  Woo-sung Han ,  Chang-jin Sohn

Inventor： Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi ,  Woo-sung Han ,  Chang-jin Sohn

IPC: G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G02B5/18 ,  G03B27/54

CPC classification number: G03F7/70125 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2002 ,  G03F7/70241 ,  G03F7/70283 ,  G03F1/26

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

公开(公告)号：US5985491A

公开(公告)日：1999-11-16

申请号：US664535

申请日：1996-06-17

Applicant: Cheol-hong Kim ,  Chang-jin Sohn

Inventor： Cheol-hong Kim ,  Chang-jin Sohn

IPC: G02B5/08 ,  G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

CPC classification number: G03F7/70191 ,  G03F1/26 ,  G03F1/52 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70583

Abstract: A photolithographic projection system for selectively irradiating a photosensitive layer on a wafer according to a predetermined pattern on a mask is discussed. The photolithographic projection system includes a radiation source which generates radiation such as light. A reflector reflects the radiation from the radiation source on a path which intersects the wafer. This reflector includes a radiation reflecting portion and a phase-shifting and partially reflecting portion adjacent the radiation reflecting portion. The reflecting portion may include a plurality of reflecting portions surrounded by the absorbing portion, or the reflecting portion may surround the absorbing portion. Alternately, the reflector may include a reflecting portion and an absorbing portion adjacent the reflecting portion. Related methods are also discussed.

Abstract translation: 讨论了用于根据掩模上的预定图案在晶片上选择性地照射光敏层的光刻投影系统。 光刻投影系统包括产生诸如光的辐射的辐射源。 反射器在与晶片相交的路径上反射来自辐射源的辐射。 该反射器包括辐射反射部分和与辐射反射部分相邻的相移部分反射部分。 反射部可以包括被吸收部包围的多个反射部，或者反射部可以包围吸收部。 或者，反射器可以包括反射部分和邻近反射部分的吸收部分。 还讨论了相关方法。

公开(公告)号：US5446587A

公开(公告)日：1995-08-29

申请号：US115732

申请日：1993-09-02

Applicant: Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi ,  Woo-sung Han ,  Chang-jin Sohn

Inventor： Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi ,  Woo-sung Han ,  Chang-jin Sohn

IPC: G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G02B27/44 ,  G01B11/00 ,  G03B27/42

CPC classification number: G03F7/70125 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2002 ,  G03F7/70241 ,  G03F7/70283 ,  G03F1/26

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of .-+. first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

Abstract translation: 投影方法使用用于半导体器件的光刻工艺的改进的照明方法，并且投影系统和掩模使用投影方法。 通过去除通过聚光透镜的光的垂直入射分量来曝光物体。 零级衍射光破坏性地影响，并且 - / +一级衍射光的倾斜分量建设性地干扰。 斜入射分量光照射其上形成有图案的掩模。 光的垂直入射分量由于光栅掩模或形成在常规掩模背面上的光栅图案而被光的相位差除去。 由于增加的对比度，光刻工艺的分辨率得到改善，并且焦点的深度也增加。 因此，可以使用常规投影曝光系统形成用于64Mb DRAM的图案。

公开(公告)号：US07098876B2

公开(公告)日：2006-08-29

申请号：US10222909

申请日：2002-08-19

Applicant: Jae-Seok Jeong ,  Tae-Kyong Kwon ,  Nam-Sung Jung ,  Cheol-Hong Kim

Inventor： Jae-Seok Jeong ,  Tae-Kyong Kwon ,  Nam-Sung Jung ,  Cheol-Hong Kim

IPC: G09G3/28

CPC classification number: G09G3/2029 ,  G09G3/2059 ,  G09G3/288 ,  G09G2320/0247 ,  G09G2320/0261 ,  G09G2320/0266 ,  G09G2320/0276

Abstract: An image of each field displayed on a plasma display panel corresponding to input image signals is divided into sub-fields of different weights, the sub-fields being divided into two continuous sub-field groups having a different weighting value, and in which the weighting values of the sub-fields combine to display grays. The method includes generating original grays; determining a diffusion filter value; generating final grays by applying the diffusion filter value to the original grays; generating gray data corresponding to the final grays, the gray data being distributed over the two sub-field groups; and displaying an image on the PDP according to the gray data. The disclosed method and system reduce flicker and contour noise and other display problems associated with the display of 50 Hz Phase Alternating by Line image signals.

Abstract translation: 将与输入图像信号对应的等离子体显示面板上显示的各场的图像划分为不同权重的子场，将该子场分割成具有不同加权值的2个连续子场组， 子域的值组合显示灰度。 该方法包括生成原始灰度; 确定扩散滤波器值; 通过将扩散滤波器值应用于原始灰度来产生最终灰度; 产生对应于最终灰度的灰度数据，灰色数据分布在两个子场组上; 并根据灰度数据在PDP上显示图像。 所公开的方法和系统减少闪烁和轮廓噪声以及与显示50Hz相位逐行图像信号相关联的其他显示问题。

公开(公告)号：US5726738A

公开(公告)日：1998-03-10

申请号：US689169

申请日：1996-08-06

Applicant: Chang-jin Sohn ,  Cheol-hong Kim ,  Woo-sung Han

Inventor： Chang-jin Sohn ,  Cheol-hong Kim ,  Woo-sung Han

IPC: G03F7/20 ,  H01L21/027 ,  G03B27/42 ,  G03B27/52 ,  G03B27/54

CPC classification number: G03F7/701 ,  G03F7/70108

Abstract: An aperture for an off-axis illumination (OAI) and a projection exposure apparatus which employs the same. In the aperture for an OAI having a light-intercepting region and a light-transmitting region, at least a portion of the light-transmitting region is prismoidal and diffracts incident light toward the periphery of the condenser lens. Accordingly, light intensity is increased due to an increased light-transmitting region, which can lead to a reduction in the exposure time required for photolithography procedures and to an increased productivity of semiconductor devices.

Abstract translation: 用于离轴照明的光圈（OAI）和采用该光圈的投影曝光装置。 在具有遮光区域和透光区域的OAI的开口中，透光区域的至少一部分是棱柱形的，并将入射光衍射到聚光透镜的周边。 因此，由于增加的透光区域，光强度增加，这可导致光刻步骤所需的曝光时间的减少和半导体器件的生产率的提高。

公开(公告)号：US5608576A

公开(公告)日：1997-03-04

申请号：US471628

申请日：1995-06-06

Applicant: Woo-sung Han ,  Chang-jin Sohn ,  Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi

Inventor： Woo-sung Han ,  Chang-jin Sohn ,  Ho-young Kang ,  Cheol-hong Kim ,  Seong-oon Choi

IPC: G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

CPC classification number: G03F7/70125 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2002 ,  G03F7/70241 ,  G03F7/70283 ,  G03F1/26

Abstract: A projection method uses a modified illumination method for a lithography process of semiconductor device, and a projection system and mask use the projection method. An object is exposed by removing the vertical incident component of light passed through a condenser lens. Zero-order diffracted light interferes destructively and the oblique component of -/+ first-order diffracted light, interferes constructively. The obliquely incident component light illuminates a mask having a pattern formed thereon. The vertical incident component of the light is removed by a phase difference of light due to a grating mask or a grating pattern formed on the back surface of the conventional mask. The resolution of a lithography process is improved due to the increased contrast, and the depth of focus is also increased. Thus, patterns for 64 Mb DRAMs can be formed using a conventional projection exposure system.

公开(公告)号：US20140199789A1

公开(公告)日：2014-07-17

申请号：US14140775

申请日：2013-12-26

Applicant: Jae-Han LEE ,  Hoo-Sung CHO ,  Cheol-Hong KIM ,  Seung-Hak PARK

Inventor： Jae-Han LEE ,  Hoo-Sung CHO ,  Cheol-Hong KIM ,  Seung-Hak PARK

IPC: H01L21/027 ,  H01L21/66

CPC classification number: H01L22/12 ,  G03F1/70 ,  G03F1/84 ,  H01L21/31144 ,  H01L27/11556 ,  H01L27/11582

Abstract: A fabricating method of a customized mask includes forming first patterns in a mold structure, forming second patterns in the mold structure using initial masks, the mold structure having the first patterns formed therein, measuring overlap failure between the first patterns and the second patterns, and fabricating customized masks by compensating for pattern positions of the initial masks based on the measuring results, wherein compensating for the pattern positions of the initial masks includes shifting positions of at least some patterns of the initial masks according to shift directions and sizes of at least some of the first patterns.

Abstract translation: 定制掩模的制造方法包括在模具结构中形成第一图案，使用初始掩模在模具结构中形成第二图案，其中形成有第一图案的模具结构，测量第一图案与第二图案之间的重叠故障，以及 通过基于测量结果补偿初始掩模的图案位置来制造定制掩模，其中补偿初始掩模的图案位置包括根据至少一些的移动方向和尺寸的初始掩模的至少某些图案的移位位置 的第一种模式。

公开(公告)号：US20120092638A1

公开(公告)日：2012-04-19

申请号：US13221360

申请日：2011-08-30

Applicant: Tae-Jin Park ,  Cheol-Hong Kim

Inventor： Tae-Jin Park ,  Cheol-Hong Kim

IPC: G03B27/58

CPC classification number: G03B27/58 ,  G03B27/53 ,  G03F7/70775 ,  G03F9/7088

Abstract: In a method of aligning a wafer stage, the wafer stage may be moved in an X-axis direction. A first coordinate of the wafer stage may be measured from a first measurement position inclined to the X-axis. The wafer stage may be moved in a Y-axis direction. A second coordinate of the wafer stage may be measured from a second measurement position inclined to the Y-axis. Thus, a movement distance of the wafer stage may be increased, so that the interferometers may accurately measure the position of the wafer stage.

Abstract translation: 在对准晶片台的方法中，晶片台可以在X轴方向上移动。 可以从倾斜于X轴的第一测量位置测量晶片台的第一坐标。 晶片载物台可沿Y轴方向移动。 可以从与Y轴倾斜的第二测量位置测量晶片台的第二坐标。 因此，可以增加晶片台的移动距离，使得干涉仪可以精确地测量晶片台的位置。

公开(公告)号：US5848901A

公开(公告)日：1998-12-15

申请号：US496287

申请日：1995-06-29

Applicant: Cheol-hong Kim ,  Hyun-jung Park

Inventor： Cheol-hong Kim ,  Hyun-jung Park

IPC: G09B5/06 ,  G09B7/00

CPC classification number: G09B5/065

Abstract: A recording and reproducing apparatus using a video tape includes a user interfacer for generating comment information in response to a user key input, a video cassette recorder for recording the comment information on a predetermined region in a video tape, a transmission interfacer for enabling the user interfacer and the video cassette recorder to a transmit and receive a signal therebetween and a display for displaying a signal reproduced from the video cassette recorder so that user can recognize the signal. This apparatus is particularly useful for an educational-purposed video system.

Abstract translation: 使用录像带的记录和再现装置包括用于响应于用户键输入产生评论信息的用户接口，用于在视频磁带中的预定区域记录注释信息的录像机，用于使用户能够使用的传输接口 接口和视频盒式录像机之间发送和接收信号，以及用于显示从盒式录像机再现的信号的显示器，以便用户可以识别该信号。 该装置对于教育用途的视频系统特别有用。