公开(公告)号：US08610270B2

公开(公告)日：2013-12-17

申请号：US12702636

申请日：2010-02-09

Applicant: Yi-Jen Lai ,  Chih-Kang Han ,  Chien-Pin Chan ,  Chih-Yuan Chien ,  Huai-Tei Yang

Inventor： Yi-Jen Lai ,  Chih-Kang Han ,  Chien-Pin Chan ,  Chih-Yuan Chien ,  Huai-Tei Yang

IPC: H01L23/498 ,  H01L23/48

CPC classification number: H01L24/13 ,  H01L21/6836 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/6834 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/16237 ,  H01L2224/81001 ,  H01L2224/812 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/3651 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

Abstract: A semiconductor device includes a bump structure over a pad region. The bump structure includes a copper layer and a lead-free solder layer over the copper layer. The lead-free solder layer is a SnAg layer, and the Ag content in the SnAg layer is less than 1.6 weight percent.

Abstract translation: 半导体器件包括在焊盘区域上的凸块结构。 凸块结构包括在铜层上的铜层和无铅焊料层。 无铅焊料层是SnAg层，SnAg层中的Ag含量小于1.6重量％。

公开(公告)号：US20110193219A1

公开(公告)日：2011-08-11

申请号：US12702636

申请日：2010-02-09

Applicant: Yi-Jen LAI ,  Chih-Kang Han ,  Chien-Pin Chan ,  Chih-Yuan Chien ,  Huai-Tei Yang

Inventor： Yi-Jen LAI ,  Chih-Kang Han ,  Chien-Pin Chan ,  Chih-Yuan Chien ,  Huai-Tei Yang

IPC: H01L23/498 ,  H01L21/60

CPC classification number: H01L24/13 ,  H01L21/6836 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/6834 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/16237 ,  H01L2224/81001 ,  H01L2224/812 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/3651 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

Abstract: A semiconductor device includes a bump structure over a pad region. The bump structure includes a copper layer and a lead-free solder layer over the copper layer. The lead-free solder layer is a SnAg layer, and the Ag content in the SnAg layer is less than 1.6 weight percent.

Abstract translation: 半导体器件包括在焊盘区域上的凸块结构。 凸块结构包括在铜层上的铜层和无铅焊料层。 无铅焊料层是SnAg层，SnAg层中的Ag含量小于1.6重量％。