Method and apparatus for neutralization of ion beam using AC ion source
    2.
    发明授权
    Method and apparatus for neutralization of ion beam using AC ion source 有权
    使用AC离子源中和离子束的方法和装置

    公开(公告)号:US07241360B2

    公开(公告)日:2007-07-10

    申请号:US10126132

    申请日:2002-04-19

    Abstract: There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of the film deposition. A power supply with a reversing voltage waveform is utilized that neutralizes the electric charge on the substrate and the vacuum chamber apparatus. A power supply applies an ac voltage to the anode of the ion source and a rectified ac voltage to the cathode. The ground terminal of the power supply is connected to the vacuum chamber. The rectifying circuit is comprised of zener diodes that clamp the voltage in the circuit from spikes during plasma ignition and a capacitor connected to negatively bias the cathode when there is no plasma discharge.

    Abstract translation: 本发明提供了一种用于在真空室中的衬底上沉积薄膜的独特的离子源,该真空室中和在基板和真空室装置上形成的正电荷,这可能导致成膜和电沉积的劣化。 利用具有反转电压波形的电源,其中和基板和真空室装置上的电荷。 电源向离子源的阳极施加交流电压,并向阴极施加整流的交流电压。 电源的接地端子连接到真空室。 整流电路包括齐纳二极管,其在等离子体点火期间钳位电路中的电压,并且在不存在等离子体放电时将电容器连接到负极偏置阴极。

    Apparatus for deposition of diamond like carbon
    3.
    发明申请
    Apparatus for deposition of diamond like carbon 审中-公开
    用于沉积金刚石碳的装置

    公开(公告)号:US20050098118A1

    公开(公告)日:2005-05-12

    申请号:US10990649

    申请日:2004-11-16

    CPC classification number: H01J27/08 C23C14/0605 C23C14/221 C23C14/564

    Abstract: Apparatus to achieve both more uniform and particle free DLC deposition is disclosed which automatically cycles between modes to effect automatic removal of carbon-based buildups or which provides barriers to achieve proper gas flow involves differing circuitry and design parameter options. One ion source may be used in two different modes whether for DLC deposition or not through automatic control of gas flow types and rates and through the control of the power applied to achieve maximum throughput or other desired processing goals. Arcing can be controlled and even permitted to optimize the overall results achieved.

    Abstract translation: 公开了实现更均匀和无颗粒的DLC沉积的装置,其自动循环以实现碳基积累的自动去除,或提供阻碍实现适当气体流动的障碍,其涉及不同的电路和设计参数选项。 一个离子源可以以两种不同的模式使用,无论是通过气流类型和速率的自动控制以及通过控制施加的功率以实现最大吞吐量或其它期望的处理目标来进行DLC沉积。 可以控制电弧,甚至允许优化实现的整体结果。

    Method for deposition of diamond like carbon
    4.
    发明授权
    Method for deposition of diamond like carbon 失效
    金刚石碳沉积方法

    公开(公告)号:US06451389B1

    公开(公告)日:2002-09-17

    申请号:US09551169

    申请日:2000-04-17

    CPC classification number: H01J27/08 C23C14/0605 C23C14/221 C23C14/564

    Abstract: Systems to achieve both more uniform and particle free DLC deposition is disclosed which automatically cycles between modes to effect automatic removal of carbon-based buildups or which provides barriers to achieve proper gas flow involves differing circuitry and design parameter options. One ion source may be used in two different modes whether for DLC deposition or not through automatic control of gas flow types and rates and through the control of the power applied to achieve maximum throughput or other desired processing goals. Arcing can be controlled and even permitted to optimize the overall results achieved.

    Abstract translation: 公开了实现更均匀和无颗粒的DLC沉积的系统,其自动循环模式以实现碳基积累的自动去除,或者提供阻碍实现适当气体流动的障碍涉及不同的电路和设计参数选项。 一个离子源可以以两种不同的模式使用,无论是通过气流类型和速率的自动控制以及通过控制施加的功率以实现最大吞吐量或其它期望的处理目标来进行DLC沉积。 可以控制电弧,甚至允许优化实现的整体结果。

    Method of providing a material processing ion beam
    6.
    发明授权
    Method of providing a material processing ion beam 失效
    提供材料处理离子束的方法

    公开(公告)号:US06818257B2

    公开(公告)日:2004-11-16

    申请号:US10246493

    申请日:2002-09-17

    CPC classification number: H01J27/08 C23C14/0605 C23C14/221 C23C14/564

    Abstract: Systems to achieve both more uniform and particle free DLC deposition is disclosed which automatically cycles between modes to effect automatic removal of carbon-based buildups or which provides barriers to achieve proper gas flow involves differing circuitry and design parameter options. One ion source may be used in two different modes whether for DLC deposition or not through automatic control of gas flow types and rates and through the control of the power applied to achieve maximum throughput or other desired processing goals. Arcing can be controlled and even permitted to optimize the overall results achieved.

    Abstract translation: 公开了实现更均匀和无颗粒的DLC沉积的系统,其自动循环模式以实现碳基积累的自动去除,或者提供阻碍实现适当气体流动的障碍涉及不同的电路和设计参数选项。 一个离子源可以以两种不同的模式使用,无论是通过气流类型和速率的自动控制以及通过控制施加的功率以实现最大吞吐量或其它期望的处理目标来进行DLC沉积。 可以控制电弧,甚至允许优化实现的整体结果。

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