摘要:
An article and method of forming the article is disclosed. The article includes a heat source, a heat-sink, and a thermal interface element having a plurality of freestanding nanosprings, a top layer, and a bottom layer. The nanosprings, top layer, and the bottom layers of the article include at least one inorganic material. The article can be prepared using a number of methods including the methods such as GLAD and electrochemical deposition.
摘要:
An article and method of forming the article is disclosed. The article includes a heat source, a heat-sink, and a thermal interface element having a plurality of freestanding nanosprings, a top layer, and a bottom layer. The nanosprings, top layer, and the bottom layers of the article include at least one inorganic material. The article can be prepared using a number of methods including the methods such as GLAD and electrochemical deposition.
摘要:
A method for fabricating a substrate package for a high density interconnect multichip module stack comprises: providing a substrate having holes extending therethrough and having a bottom surface with metallization situated thereon; providing a metal sheet having grooves extending therethrough; attaching the metal sheet to the bottom surface of the substrate; attaching metal plugs through the holes to the metal sheet; and removing portions of the substrate to expose the metal plugs and separate the metal sheet into a plurality of segments defined by the grooves.
摘要:
Detector modules for an imaging system and methods of manufacturing are provided. One detector module includes a substrate, a direct conversion sensor material coupled to the substrate and a flexible interconnect electrically coupled to the direct conversion sensor material and configured to provide readout of electrical signals generated by the direct conversion sensor material. The detector module also includes at least one illumination source for illuminating the direct conversion sensor material.
摘要:
An ultrasound acoustic assembly includes a number of ultrasound acoustic arrays, each array comprising an acoustic stack comprising a piezoelectric layer assembled with at least one acoustic impedance dematching layer and with a support layer. The acoustic stack defines a number of dicing kerfs and a number of acoustic elements, such that the dicing kerfs are formed between neighboring ones of the acoustic elements. The dicing kerfs extend through the piezoelectric layer and through the acoustic impedance dematching layer(s) but extend only partially through the support layer. The ultrasound acoustic assembly further includes a number of application specific integrated circuit (ASIC) die. Each ultrasound acoustic array is coupled to a respective ASIC die to form a respective acoustic-electric transducer module. Methods of manufacture are also provided.
摘要:
An interconnect assembly for use in high frequency applications includes an interconnect structure, a plurality of electronic die disposed on the interconnect structure, and an encapsulant at least partially surrounding the plurality of electronic die. The interconnect structure includes a plurality of layers. The interconnect assembly further includes a thermal management layer disposed within a portion of the encapsulant and proximate to the plurality of electronic die and a controlled impedance interconnect connected to the interconnect structure and extending to a peripheral surface of the interconnect assembly.
摘要:
An interconnect structure includes an insulative web having a first surface and a second surface; a logic device secured to the second surface of the insulative web; a frame panel assembly including a frame base having a first surface and a second surface, a first frame insulative layer disposed between the frame base first surface and the insulative web second surface, an aperture extending through the frame base and first frame insulative layer, wherein at least a portion of the logic device is disposed within the aperture, and a first frame connector disposed between a first electrically conductive layer located on the frame base first surface, and a second electrically conductive layer located on a surface of the first frame insulative layer; a device connector disposed between an I/O contact on a surface of the logic device and a third electrical conductor located on a surface of the insulative web; and an insulative layer connector that is disposed between the third electrical conductor located on a surface of the insulative web and the second electrically conductive layer located on a surface of the first frame insulative layer.
摘要:
A method is provided. The method includes forming a conductive layer on an inner surface of a substrate and providing a sacrificial layer over the conductive layer. The method includes forming a plurality of channels in the sacrificial layer and plating the sacrificial layer to substantially fill the plurality of channels with a plating material comprising conducting material. The method also includes etching the sacrificial layer to form a conducting structure having fins where conducting material remains separated by microchannels where the sacrificial layer is etched.
摘要:
A method is provided. The method includes forming a conductive layer on an inner surface of a substrate and providing a sacrificial layer over the conductive layer. The method includes forming a plurality of channels in the sacrificial layer and plating the sacrificial layer to substantially fill the plurality of channels with a plating material comprising conducting material. The method also includes etching the sacrificial layer to form a conducting structure having fins where conducting material remains separated by microchannels where the sacrificial layer is etched.
摘要:
An interconnection structure includes: a dielectric layer; a first metallization pattern on the dielectric layer, the first metallization pattern including at least one etch stop having a perimeter defining at least one etch stop opening; a cured adhesive on a portion of the dielectric layer, the adhesive not present in an area aligned with the at least one etch stop; and at least one electrical device being attached to the dielectric layer by the adhesive such that an active area of the at least one electrical device is aligned with the etch stop perimeter. The active area of the at least one electrical device may further be aligned with at least one predetermined area defined by an optional additional portion of cured adhesive, the additional portion of the cured adhesive being adhesively attached to the dielectric layer and not adhesively attached to the at least one electrical device.