公开(公告)号：US06248250B1

公开(公告)日：2001-06-19

申请号：US08897436

申请日：1997-07-21

申请人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Saizman ,  Peter K. Loewenhardt ,  Allen Zhao

发明人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Saizman ,  Peter K. Loewenhardt ,  Allen Zhao

IPC分类号： H05H146

CPC分类号： H01J37/321

摘要： The present invention adheres to an optimized coil-domed geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.

摘要翻译： 本发明坚持优化的线圈圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶点高度范围和相对于圆顶顶点的特定晶片位置范围。

公开(公告)号：US5777289A

公开(公告)日：1998-07-07

申请号：US597445

申请日：1996-02-02

申请人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Salzman ,  Peter K. Loewenhardt ,  Allen Zhao

发明人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana Xiaobing Ma ,  Philip M. Salzman ,  Peter K. Loewenhardt ,  Allen Zhao

IPC分类号： H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K10/00

CPC分类号： H01J37/321

摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling. The present invention adheres to an optimized coil-dome geometry including a particular dome apex height range relative to the dome base and a particular wafer position range relative to the dome apex.

摘要翻译： 用于处理半导体晶片的感应耦合RF等离子体反应器包括具有侧壁和天花板的反应室，用于将晶片支撑在室中的晶片基座，RF电源，将处理气体引入反应室的装置，以及 与所述反应室相邻的线圈电感器，所述线圈电感器连接到所述RF电源，所述线圈电感器包括（a）面向所述侧壁的一部分并包括底部绕组和顶部绕组的侧面部分，所述顶部绕组的高度对应于 至少约至顶部的顶部高度，以及（b）从侧部的顶部绕组径向向内延伸的顶部部分，以覆盖至少大部分天花板。 本发明遵循优化的线圈 - 圆顶几何形状，其包括相对于圆顶基座的特定圆顶顶部高度范围和相对于圆顶顶点的特定晶片位置范围。

公开(公告)号：US06189484B1

公开(公告)日：2001-02-20

申请号：US09263642

申请日：1999-03-05

申请人： Gerald Zheyao Yin ,  Chii Guang Lee ,  Arnold Kholodenko ,  Peter K. Loewenhardt ,  Hongching Shan ,  Diana Xiaobing Ma ,  Dan Katz

发明人： Gerald Zheyao Yin ,  Chii Guang Lee ,  Arnold Kholodenko ,  Peter K. Loewenhardt ,  Hongching Shan ,  Diana Xiaobing Ma ,  Dan Katz

IPC分类号： C23C1600

CPC分类号： H01J37/321 ,  H01J37/32678

摘要： A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.

摘要翻译： 具有改进的等离子体和污染物控制的螺旋波，高密度RF等离子体反应器。 反应器包含明确定义的阳极电极，其被加热到聚合物冷凝温度以上，以确保否则会改变接地平面特性的材料沉积物不会在阳极上形成。 反应器还包含磁性桶，用于使用多个垂直取向的磁条或围绕室的水平取向的磁环将轴向限制在室中的等离子体。 反应器可以利用温度控制系统来维持室的表面上恒定的温度。

公开(公告)号：US6020686A

公开(公告)日：2000-02-01

申请号：US908533

申请日：1997-08-07

申请人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin

发明人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin

IPC分类号： H05H1/46 ,  C23C14/24 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05B37/02

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/321

摘要： The invention is embodied in a plasma reactor for processing a semiconductor wafer, the reactor having a pair of parallel capacitive electrodes at the ceiling and base of the processing chamber, respectively, each of the capacitive electrodes capacitively coupling RF power into the chamber in accordance with a certain RF phase relationship between the pair of electrodes during processing of the semiconductor wafer for ease of plasma ignition and precise control of plasma ion energy and process reproducibility, and an inductive coil wound around a portion of the chamber and inductively coupling RF power into the chamber for independent control of plasma ion density. Preferably, in order to minimize the number of RF sources while providing independent power control, the invention includes power splitting to separately provide power from a common source or sources to the pair of electrodes and to the coil.

摘要翻译： 本发明体现在用于处理半导体晶片的等离子体反应器中，反应器分别在处理室的天花板和底部具有一对平行的电容电极，每个电容电极根据电容电容将RF功率电容耦合到室中 在半导体晶片的处理期间该对电极之间的某些RF相位关系易于等离子体点火并且精确控制等离子体离子能量和工艺再现性，以及感应线圈，其缠绕在腔室的一部分上并将RF功率感应耦合到 用于独立控制等离子体离子密度。 优选地，为了在提供独立的功率控制的同时最小化RF源的数量，本发明包括功率分配以从共同的源或源分别向一对电极和线圈供电。

公开(公告)号：US5783101A

公开(公告)日：1998-07-21

申请号：US307870

申请日：1994-09-16

申请人： Diana Xiaobing Ma ,  Gerald Zheyao Yin ,  Hiroji Hanawa

发明人： Diana Xiaobing Ma ,  Gerald Zheyao Yin ,  Hiroji Hanawa

IPC分类号： H01L21/28 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/02

CPC分类号： H01J37/321 ,  H01L21/32136

摘要： The plasma source power frequency in a plasma etch reactor is reduced to a low RF frequency such as about 2 MHz. It is a discovery of this invention that at this low frequency, capacitive coupling from the plasma power source is reduced, and the plasma source power level may be increased beyond 750 Watts to reduce capacitive coupling and provide a high density inductively coupled plasma without appreciably increasing the ion bombardment energy. Moreover, under these conditions the etchant (e.g., chlorine) concentration in the plasma may be increased to about 80 percent without decreasing etch uniformity to provide a very high metal alloy etch rate with complete residue removal, no profile microloading, and no etch rate microloading, the process being applicable over a wide window of metal alloy compositions.

摘要翻译： 等离子体蚀刻反应器中的等离子体源功率频率降低到低RF频率，例如约2MHz。 本发明的发现是，在这种低频下，来自等离子体电源的电容耦合被降低，并且等离子体源功率电平可以增加到超过750瓦特以减小电容耦合并且提供高密度感应耦合等离子体而不会明显增加 离子轰击能量。 此外，在这些条件下，等离子体中的蚀刻剂（例如，氯）浓度可以增加到约80％，而不降低蚀刻均匀性，以提供非常高的金属合金蚀刻速率，完全残留物去除，无轮廓微加载，并且没有蚀刻速率的微加载 ，该方法适用于宽窗口的金属合金组合物。

公开(公告)号：US5817534A

公开(公告)日：1998-10-06

申请号：US567376

申请日：1995-12-04

申请人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Donald Olgado ,  James Papanu ,  Steven S.Y. Mak

发明人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Donald Olgado ,  James Papanu ,  Steven S.Y. Mak

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01L21/67028 ,  H01J37/32862 ,  Y10S438/905

摘要： The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF power source for coupling RF power into the reactor chamber to generate from the processing gas a plasma inside the chamber, the chamber containing at least one surface exposed toward the plasma and susceptible to contamination by particles produced during processing of the wafer, the invention being carried out by promoting, during processing of the wafer, bombarding of particles from the plasma onto the one surface to remove therefrom contaminants deposited during processing of the wafer. Such promoting of bombarding is carried out by providing an RF power supply and coupling, during processing of the wafer, RF power from the supply to the one surface. The coupling may be performed by a capacitive cleaning electrode adjacent the one surface, the capacitive cleaning electrode connected to the RF power supply. The capacitive cleaning electrode preferably is disposed on a side of the one surface opposite the plasma so as to be protected from contact with the plasma. Alternatively, the coupling may be carried out by a direct electrical connection from the RF power supply to the one surface.

摘要翻译： 本发明在用于处理半导体晶片的等离子体反应器中进行，等离子体反应器具有用于容纳处理气体的室，并具有连接到RF电源的导体，用于将RF功率耦合到反应器室中以从处理气体产生 腔室内的等离子体，该腔室包含至少一个暴露于等离子体的表面并容易受到在晶片加工期间产生的颗粒的污染，本发明通过在晶片加工期间促进从等离子体中轰击颗粒而进行 在一个表面上去除在晶片加工期间沉积的污染物。 通过在晶片的处理期间提供RF电源和耦合来进行轰击的这种促进是从电源到单个表面的RF功率。 耦合可以通过与一个表面相邻的电容清洁电极，电容清洁电极连接到RF电源来进行。 电容式清洁电极优选地设置在与等离子体相对的一个表面的一侧，以便被保护而不与等离子体接触。 或者，耦合可以通过从RF电源到一个表面的直接电连接来执行。

公开(公告)号：US5710486A

公开(公告)日：1998-01-20

申请号：US436513

申请日：1995-05-08

申请人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin

发明人： Yan Ye ,  Hiroji Hanawa ,  Diana Xiaobing Ma ,  Gerald Zheyao Yin

IPC分类号： H05H1/46 ,  C23C14/24 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01J7/24

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/321

摘要： The invention is embodiment in a plasma reactor for processing a semiconductor wafer, the reactor having a pair of parallel capacitive electrodes at the ceiling and base of the processing chamber, respectively, each of the capacitive electrodes capacitvely coupling RF power into the chamber in accordance with a certain RF phase relationship between the pair of electrodes during processing of the semiconductor wafer for ease of plasma ignition and precise control of plasma ion energy and process reproducibility, and an inductive coil wound around a portion of the chamber and inductively coupling RF power into the chamber for independent control of plasma ion density. Preferably, in order to minimize the number of RF sources while providing independent power control, the invention includes power splitting to separately provide power from a common source or sources to the pair of electrodes and to the coil.

摘要翻译： 本发明是用于处理半导体晶片的等离子体反应器中的实施例，该反应器分别在处理室的天花板和底部具有一对平行的电容电极，每个电容电极根据电容电容将RF功率电容耦合到室中 在半导体晶片的处理期间该对电极之间的某些RF相位关系易于等离子体点火并且精确控制等离子体离子能量和工艺再现性，以及感应线圈，其缠绕在腔室的一部分上并将RF功率感应耦合到 用于独立控制等离子体离子密度。 优选地，为了在提供独立的功率控制的同时最小化RF源的数量，本发明包括功率分配以从共同的源或源分别向一对电极和线圈供电。

公开(公告)号：US5897712A

公开(公告)日：1999-04-27

申请号：US683053

申请日：1996-07-16

申请人： Hiroji Hanawa ,  Peter K Loewenhardt ,  Timothy D. Driscoll ,  Gerald Zheyao Yin

发明人： Hiroji Hanawa ,  Peter K Loewenhardt ,  Timothy D. Driscoll ,  Gerald Zheyao Yin

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01J37/321

摘要： The present invention reduces those portions of the RF induction field over areas of the wafer experiencing higher etch or deposition rates than those experienced elsewhere on the wafer. Such a controlled reduction of those portions of the RF induction field whose attenuation results in reducing non-uniformity in the etch or deposition rate distribution is obtained by incorporating a plasma uniformity control apparatus into the inductively coupled plasma reactor. The incorporated plasma uniformity control apparatus for controlling the RF induction field produced by the antenna includes one or more conductive bodies which are disposed adjacent to one or more of the radiating elements of the antenna.

摘要翻译： 本发明在晶片的区域上减少RF感应场的那些部分，其经历比在晶片上其他地方经历的蚀刻或沉积速率更高的蚀刻或沉积速率。 通过将等离子体均匀性控制装置并入到电感耦合等离子体反应器中，可以获得衰减导致减小蚀刻或沉积速率分布不均匀性的RF感应场的那些部分的这种受控减少。 用于控制由天线产生的RF感应场的合并等离子体均匀性控制装置包括与天线的一个或多个辐射元件相邻设置的一个或多个导电体。

公开(公告)号：US5900062A

公开(公告)日：1999-05-04

申请号：US579230

申请日：1995-12-28

申请人： Peter K. Loewenhardt ,  Hiroji Hanawa ,  Raymond Gristi ,  Gerald Zheyao Yin ,  Yan Ye

发明人： Peter K. Loewenhardt ,  Hiroji Hanawa ,  Raymond Gristi ,  Gerald Zheyao Yin ,  Yan Ye

IPC分类号： H01L21/683 ,  H02N13/00 ,  C23C16/00

CPC分类号： H01L21/6831 ,  H01L21/6833 ,  Y10T307/839 ,  Y10T307/858

摘要： A lift pin 95 for dechucking a substrate 15 held to a chuck 50 by residual electrostatic charge, the substrate being processed in a plasma formed using RF currents, is described. The lift pin 95 comprises (a) a movable elongated member 110 having a tip 115 suitable for lifting and lowering the substrate 15 off the chuck 50, and capable of forming an electrically conductive path between the substrate 15 and a current sink 105. The electrically conductive path comprises at least one of the following: (1) a frequency selective filter capable of filtering RF currents flowing therethrough so that substantially no RF currents flow through the filter; or (2) a resistor having a resistance sufficiently elevated to reduce the voltage caused by RF currents flowing therethrough, by at least about 50%. The lift pin 95 allows the residual electrostatic charge in the substrate 15 to be discharged to the current sink 105 substantially without allowing RF currents, used to form a plasma in the process chamber and to attract the plasma to the substrate, from flowing to the current sink 105.

摘要翻译： 一种提升销95，用于通过残留的静电电荷将夹持在卡盘50上的基板15脱扣，该基板在使用RF电流形成的等离子体中进行加工。 提升销95包括（a）可移动细长构件110，其具有适于将基板15从卡盘50上提升和降低的尖端115，并且能够在基板15和电流槽105之间形成导电路径。 导电路径包括以下中的至少一个：（1）能够过滤流过其中的RF电流的频率选择滤波器，使得基本上没有RF电流流过滤波器; 或（2）具有足够升高的电阻的电阻器，以将由其流过的RF电流引起的电压降低至少约50％。 提升销95允许基板15中的残余静电电荷基本上不被放电到电流槽105，而不允许用于在处理室中形成等离子体并且将等离子体吸引到衬底的RF电流流向电流 水槽105。

公开(公告)号：US5753044A

公开(公告)日：1998-05-19

申请号：US389889

申请日：1995-02-15

申请人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana X. Ma ,  Phil M. Salzman ,  Peter Loewenhardt ,  Allen Zhao

发明人： Hiroji Hanawa ,  Gerald Zheyao Yin ,  Diana X. Ma ,  Phil M. Salzman ,  Peter Loewenhardt ,  Allen Zhao

IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/321

摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling.

摘要翻译： 用于处理半导体晶片的感应耦合RF等离子体反应器包括具有侧壁和天花板的反应室，用于将晶片支撑在室中的晶片基座，RF电源，将处理气体引入反应室的装置，以及 与所述反应室相邻的线圈电感器，所述线圈电感器连接到所述RF电源，所述线圈电感器包括（a）面向所述侧壁的一部分并包括底部绕组和顶部绕组的侧面部分，所述顶部绕组的高度对应于 至少大约到顶部的顶部高度，以及（b）从侧部的顶部绕组径向向内延伸的顶部部分，以便至少覆盖天花板的大部分。