摘要:
The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant, a noble gas halide or an interhalogen. The sample/workpiece that is etched can be, for example, a semiconductor device or MEMS device, etc. The material that is etched/removed by the vapor phase etchant is preferably silicon and the vapor phase etchant is preferably provided along with one or more diluents. Another feature of the etching system includes the ability to accurately determine the end point of the etch step, such as by creating an impedance at the exit of the etching chamber (or downstream thereof) so that when the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. A first plasma or wet chemical etch (or both) can be performed prior to the vapor phase etch.
摘要:
Processes for the addition or removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the use of recirculation of the process gas. Recirculation is effected by a pump that has no sliding or abrading parts that contact the process gas, nor any wet (such as oil) seals or purge gas in the pump. Improved processing can be achieved by a process chamber that contains a baffle, a perforated plate, or both, appropriately situated in the chamber to deflect the incoming process gas and distribute it over the workpiece surface. In certain embodiments, a diluent gas is added to the recirculation loop and continuously circulated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop. Also, cooling of the process gas, etching chamber and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample of microscopic dimensions.
摘要:
The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by slowing the etch rate. The etch rate is preferably 30 um/hr or less, and can be 3 um/hr or even less. The selectivity is also improved by the addition of non-etchant gaseous additives to the etchant gas. Preferably the non-etchant gaseous additives that have a molar-averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity. The etch process is also enhanced by the ability to accurately determine the end point of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. Also, the etch selectivity can be improved by doping the sacrificial material.
摘要:
A method is disclosed for securing a flexible covering about a frame having a peripheral edge and at least one corner. A portion of the flexible covering is folded over the peripheral edge of the frame at or about the corner and an excess portion of the covering is provided. Ultrasonic welding is used to create a seam of contacting portions of the flexible covering. In an embodiment, the excess portion of the flexible covering is removed in connection with the welding operation. An apparatus for securing a flexible covering about a frame is also provided.
摘要:
A window assembly for installation across at least a portion of an opening through a partition frame. The window assembly includes a sheet of light-transmitting material defining opposite edges. Side members are disposed on the opposite side edges, and telescope relative to one another. At least one of the side members includes a connector for securing the window assembly to the partition frame. The connector engages the partition frame upon telescoping of the side members to secure the window to the partition frame.
摘要:
A multi-position bracket includes a cantilever body defining first and second sides, and including rear and upper orthogonal edges. The rear edge includes at least one hook shaped to removably engage slots of an upright. The multi-position bracket further includes a mounting plate interconnected with the cantilever body in a selected one of first and second offset positions and a center position relative to the cantilever body. The mounting plate defines a center portion and first and second opposite side portions. The center portion of the mounting plate includes a center connector interconnecting the mounting plate in the cantilever body with the mounting plate in the center position for supporting adjacent side edges of a pair of side-by-side hang-on furniture units. The first side portion of the mounting plate includes a connector interconnecting the mounting plate and the cantilever body with the mounting plate offset to the first side of the cantilever body for supporting a side edge of a hang-on furniture unit disposed on the first side of the cantilever body. The second side portion of the mounting plate includes a connector interconnecting the mounting plate and the cantilever body with the mounting plate offset to the second side of the cantilever body for supporting a side edge of a hang-on furniture unit disposed on the second side of the cantilever body.
摘要:
A knock-down transparent module includes a module frame with a pair of vertical side frame members, each having an upper end and a lower end. Upper and lower horizontal frame members have opposite ends and extend generally horizontally between the vertical side frame members adjacent the upper and lower ends thereof and interconnect the same adjacent the upper and lower ends to define a central opening through the module frame. A transparent sheet is secured to the module frame and extends across the central opening. The module frame defines outer faces having at least one hook shaped to engage an opening in a partition frame member, thereby permitting the module frame to be removably supported within a partition.
摘要:
A furniture arrangement includes a hang-on furniture unit such as a worksurface, an upright support such as an office partition panel, and a system of brackets adapted to lockingly engage the upright support and support the hang-on furniture unit. The system of brackets includes a cantilever bracket with teeth adapted to engage slots in the upright support, and an upper edge for supporting the hang-on furniture unit. The system of brackets further includes a locking bracket adapted with second teeth, the first and second teeth being adapted to form an interlocking arrangement in the slots in the upright support. The locking bracket also includes a safety tab that engages a tab mount on the upper edge of the cantilever bracket, the safety tab being configured so that the second teeth must be properly located in the slots in order to allow the safety tab to engage the tab mount. The hang-on furniture unit is attached to the cantilever bracket and the locking bracket to form a rigid unit that cannot be inadvertently disengaged from the upright support. The locking bracket is reversible to minimize the number of parts that must be used.
摘要:
Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber.
摘要:
An office panel partition includes a panel frame having at least two uprights and a horizontal structural member rigidly interconnecting the uprights. The panel frame has a first side and a second opposite side, and the panel frame defines at least four apertures on the first side thereof. The partition also includes a cover member having a major planar surface defining an exterior surface of the partition. The cover member includes at least four projections that are removably insertable into the at least four apertures to removably secure the cover member to the frame. The apertures are arranged in at least two vertically spaced horizontal rows and at least two horizontally spaced vertical columns. The apertures in a first one of the columns have different horizontal dimensions than those of the apertures located in the other of the columns. Each of the projections has a range of lateral positions when inserted into a respective one of the apertures. The range of lateral positions provided by the apertures in the first one of the columns is less than the range of lateral positions provided by the apertures in the other row of the columns. The apertures located in a first one of the rows has vertical dimensions that are different than those located in the other of the rows. The range of vertical positions provided by the apertures in the first one of the rows is less than the range of vertical positions provided by the apertures in the other of the rows.